Effect of interface structure on deformation behavior of crystalline Cu/amorphous CuZr sandwich structures

The effect of interface types (namely, sharp interface and graded interface) and its thickness on the deformation behavior of crystalline/amorphous/crystalline sandwich structures (CACSSs) under tensile loading are studied using molecular dynamics simulation. Compared with the CACSSs with sharp interface, the CACSSs with gradient interface consistently exhibit good plasticity when the interface thickness is larger than 6 nm, due to the coupling effects among crystalline layer, amorphous layer and crystalline–amorphous interface. With the increase of interface thickness, the plastic deformation mechanism of CACSSs with gradient interface changes from the local plastic deformation in amorphous layer to the homogeneous plastic deformation.     

Microstructure evolution of room-temperature-sputtered ITO films suitable for silicon heterojunction solar cells

Thickness influence on structural, optical and electrical properties of sputtered indium tin oxide (ITO) with thickness ranging from 60 up to 430 nm films has been studied. At the increase of the film thickness crystallinity degree and grain size increased, whereas tensile structural distortion as well as resistivity decreased. It was observed that a microstructure evolution takes place: the initial amorphous layer evolved in polycrystalline phase, with a grain–subgrain surface morphology. Carrier concentration increased at the increase of the film thickness and a general relationship between electrical characteristics and structural distortion has been found. In thinner films larger tensile distortion allowed to include larger amount of interstitial O and/or Sn atoms in the lattice. An appreciable impact of the thickness was also observed on electro-optical properties in terms of changes in energy gap, resistivity and optical absorption. Silicon heterojunction solar cells have been produced and J_sc as high as 33.0 mA/cm² has been obtained.     

金刚石层厚度对复合片(PDC)残余应力的影响

 通过X射线应力测试和有限元分析相结合的方法,研究了金刚石层厚度对聚晶金刚石复合片（PDC）残余应力的影响,并根据实验测试结果推导出了PDC表面中心与边缘的应力随金刚石层厚度变化的关系式。随着金刚石层厚度由0.5 mm增加到2.0 mm,PDC表面中心的压应力从1 800 MPa下降至700 MPa左右,而边缘部分的应力逐渐由压应力转为拉应力。金刚石层加厚虽然对边缘部分的最大拉应力影响不大,但使PDC边缘拉应力区宽度由0.76 mm增加到了2.85 mm。金刚石层厚度的增加还使得PDC边缘界面附近y方向的最大拉应力和位于界面边缘处的最大剪应力显著加大,这是金刚石层较厚的PDC界面容易产生裂纹的主要原因。     

层厚度和应变率对铜-金复合纳米线力学性能影响的模拟研究

采用分子动力学模拟方法, 研究了层厚度和应变率对铜-金多层复合纳米线在均匀拉伸载荷下力学性能的影响, 并分析了铜-金位错成核机理. 研究结果表明, 随着铜-金层厚度的增加, 复合材料的屈服强度也随之增大; 高应变率时复合材料的力学性能比低应变率时要强, 低应变率的塑性形变主要是位错运动和孪晶形变, 而高应变率主要以单原子运动为主, 表现出了非晶化. 该研究对制备高性能的多层复合材料提供了一定的理论依据.     

面层混凝土对跑道内爆毁伤影响的仿真研究

 采用考虑混凝土拉伸破坏的TCK失效模型,运用AUTODYN软件对跑道内爆毁伤进行了数值模拟。研究了炸点置于面层混凝土底部时,不同装药量和不同面层混凝土厚度对爆破漏斗坑参数的影响规律。结果表明：数值模拟结果较好地反映了混凝土因拉伸损伤引起的破裂和抛掷漏斗现象。基于数值模拟得到的漏斗坑参数值,建立了漏斗坑半径、空腔半径与面层厚度的无量纲表达式,计算得到的漏斗坑参数值得到了实验验证。     

The influence of compressive stress applied by hard coatings on the power loss of grain oriented electrical steel sheet

To reduce the core loss of electrical steel the vacuum arc ion plating technique has been used to deposit titanium nitride (TiN) layers on highly grain oriented electrical steel sheets. The layer thickness, the stresses of layers and coated sheets and the achieved reduction in core losses have been measured as functions of coating duration and applied bias voltage. Well adhered layers with high compressive stress up to 6.8 GPa have been produced. With increasing bias voltage the layer thickness decreases and the intrinsic stress of the layers increase. A further increase of bias voltage leads to a drop in stress due to thermal relaxation. In general, the tensile stress of the coated sheets rises with increasing layer thickness while the core loss of the coated material decreases with increasing tensile stress of the steel sheet and increasing bias voltage. The highest reduction of core loss has been found to be 28% (from P_1.7=0.86 W/kg for commercially coated HGO electrical steel sheet with glass film to 0.62 W/kg for TiN coated material) and is due to the reduction of excess loss only.     

Molecular dynamics study of coupled layer thickness and strain rate effect on tensile behaviors of Ti/Ni multilayered nanowires

Novel properties and applications of multilayered nanowires(MNWs) urge researchers to understand their mechanical behaviors comprehensively.Using the molecular dynamic simulation,tensile behaviors of Ti/Ni MNWs are investigated under a series of layer thickness values(1.31,2.34,and 7.17 nm) and strain rates(1.0 × 10~8 s~(-1) ≤ε≤5.0 × 10~(10) s~(-1)).The results demonstrate that deformation mechanisms of isopachous Ti/Ni MNWs are determined by the layer thickness and strain rate.Four distinct strain rate regions in the tensile process can be discovered,which are small,intermediate,critical,and large strain rate regions.As the strain rate increases,the initial plastic behaviors transform from interface shear(the shortest sample) and grain reorientation(the longest sample) in small strain rate region to amorphization of crystalline structures(all samples) in large strain rate region.Microstructure evolutions reveal that the disparate tensile behaviors are ascribed to the atomic fractions of different structures in small strain rate region,and only related to collapse of crystalline atoms in high strain rate region.A layer thickness-strain rate-dependent mechanism diagram is given to illustrate the couple effect on the plastic deformation mechanisms of the isopachous nanowires.The results also indicate that the modulation ratio significantly affects the tensile properties of unequal Ti/Ni MNWs,but barely affect the plastic deformation mechanisms of the materials.The observations from this work will promote theoretical researches and practical applications of Ti/Ni MNWs.     

Magnetoelectric effect in an asymmetric layered magnet-piezoelectric structure

The magnetoelectric effect in magnet-piezoelectric layered composite structures is discussed. The magnetoelectric voltage and the magnetoelectric coefficient are calculated taking into account bending deformations that accompany tensile and compressive strains in structures with asymmetric positions of magnetic layers relative to the neutral plane. It is demonstrated that bending deformations lead to a nonuniform distribution of the electric field over the thickness of the piezoelectric layer and to a nonmonotonic dependence of the magnetoelectric coefficient on the thickness ratio of the layers in the structure.     

Fracture and debonding behavior of coated brittle alumina layer on ductile aluminum substrate wire

The fracture and debonding behavior of the Al₂O₃ layer coated on a ductile aluminum substrate wire was studied experimentally and analytically. When tensile strain was applied, the brittle Al₂O₃ coating layer showed multiple cracking perpendicular to the tensile axis. After the multiple cracking, compressive fracture of the Al₂O₃ layer arose in the circumferential direction when the layer was thinner than around 30 μm, while interfacial debonding between the Al₂O₃ layer and aluminum substrate arose when it was thicker. Such a difference in behavior between thin and thick layers could be accounted for by the difference in the layer thickness-dependence of the tensile radial stress at the interface and the compressive hoop stress of the Al₂O₃ layer calculated by the finite element method; the former stress increases while the latter one decreases with increasing layer thickness.     

Effect of the nonmagnetic layer in a Co/Cu/CoO trilayer structure on the exchange coupling in it

The dependence of the exchange bias of epitaxial single-crystal Co/Cu/CoO trilayer films on the copper layer thickness and temperature is studied. The exchange bias of the hysteresis loops of the ferromagnetic cobalt layer as a function of the copper layer thickness is found to have a well-pronounced oscillating character. The oscillations manifest themselves over the entire temperature range in which an exchange bias takes place (77–220 K). The complex variation of the oscillation amplitude with the nonmagnetic layer thickness can be explained by the superposition of two interlayer exchange coupling oscillation periods (λ₁ ≈ 10–11 Å, λ₂ ≈ 20 Å) having differentamplitudes and temperature dependences.     

Study of the effect of varying core diameter,shell thickness and strain velocity on the tensile properties of single crystals of Cu–Ag core–shell nanowire using molecular dynamics simulations

Core–shell type nanostructures show exceptional properties due to their unique structure having a central solid core of one type and an outer thin shell of another type which draw immense attention among researchers. In this study, molecular dynamics simulations are carried out on single crystals of copper–silver core–shell nanowires having wire diameter ranging from 9 to 30 nm with varying core diameter, shell thickness, and strain velocity. The tensile properties like yield strength, ultimate tensile strength, and Young’s modulus are studied and correlated by varying one parameter at a time and keeping the other two parameters constant. The results obtained for a fixed wire size and different strain velocities were extrapolated to calculate the tensile properties like yield strength and Young’s modulus at standard strain rate of 1 mm/min. The results show ultra-high tensile properties of copper–silver core–shell nanowires, several times than that of bulk copper and silver. These copper–silver core–shell nanowires can be used as a reinforcing agent in bulk metal matrix for developing ultra-high strength nanocomposites.     

Influence of AlN Buffer Thickness on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia

Hexagonal GaN is grown on a Si(111) substrate with AlN as a buffer layer by gas source molecular beam epitaxy (GSMBE) with ammonia. The thickness of AlN buffer is changed from 9 to 72nm. When the thickness of AlN buffer is 36nm, the surface morphology and crystal quality of GaN is optimal. The in-situ reflection high energy electron diffraction (RHEED) reveals that the transition to a two-dimensional growth mode of AlN is the key to the quality of GaN. However, the thickness of AlN buffer is not so critical to the residual in-plane tensile stress in GaN grown on Si(111) by GSMBE for AlN thickness between 9 to 72nm.     

Anodic Plasma Electrolytic Nitrocarburizing of VT22 Titanium Alloy in Carbamide Electrolyte

The influence of the carbamide concentration on the nitrocarburizing temperature and changes in the mass of titanium samples, which are related to the anodic dissolution and high-temperature oxidation of titanium in a vapor?gas shell, is investigated. The modified layer structure is revealed to contain an external oxide layer (rutile) and an intermediate diffusion layer whose microhardness reaches 770 HV. It is demonstrated that an increase in the nitrocarburizing temperature stimulates growth in the oxide-layer thickness, and the diffusion-layer thickness depends on the carbamide concentration in the solution. It is found that, at 850°С, the surface roughness decreases from 1.0 to 0.3–0.5 μm and the wear rate reduces from 6.7 × 10^–7 to (1.2–1.7) × 10^–7 due to nitrocarburizing in an electrolyte incorporating 10–15 wt % ammonium chloride and 10–12.5 wt % carbamide.     

Raman scattering analysis of the residual stress in metal-induced crystallized amorphous silicon thin films using nickel

Raman scattering analysis is used to study the residual stress in metal-induced crystallized amorphous silicon thin film. The influence of the crystallization parameters on thin film properties is investigated as a function of annealing temperature, annealing time, and nickel top-seed-layer thickness. Thin films produced under optimal annealing conditions are measured to have crystallization efficiency of about 98%, which is full crystallization. Residual stress analysis reveals clear stress reduction with prolonged annealing time and Ni capping layer thickness. A very low tensile stress of about 87 MPa is achieved. The relationships between optimal crystallization temperature, crystallization time, and Ni-layer thickness are described.     

Effect of growth mechanisms on the deformation of a unit cell and polarization reversal in barium–strontium titanate heterostructures on magnesium oxide

The effect of a growth mechanism on the unit cell strain and the related change in the properties of single-crystal Ba_0.8Sr_0.2TiO₃ films grown on MgO substrates according to the Frank–van der Merwe and Volmer–Weber growth mechanisms is studied. The unit cell strain is shown to depend substantially on the film thickness and the growth mechanism. It is found that the same film–substrate pair can be used to vary stresses in the film from two-dimensional tensile to compressive stresses due to a change in the growth mechanism and the film thickness.     

Stress evolution influenced by oxide charges on GaN metal–organic chemical vapor deposition on silicon-on-insulator substrate

GaN epilayers have been deposited on silicon-on-insulator (SOI) and bulk silicon substrates. The stress transition thickness and the initial compressive stress of a GaN epilayer on the SOI substrate are larger than those on the bulk silicon substrate, as shown in in situ stress measurement results. It is mainly due to the difference of the three-dimensional island density and the threading dislocation density in the GaN layer. It can increase the compressive stress in the initial stage of growth of the GaN layer, and helps to offset the tensile stress generated by the lattice mismatch. PACS 81.15.Gh     

Features of the Growth and Properties of Dielectric Layers and Metal−Insulator−Semiconductor Structures Obtained via the Anodic Oxidation of InAs in an Electrolyte Containing Fluorine Ions

The fluorine-atom profiles over the dielectric-layer thickness, as well as the electrophysical parameters of metal–insulator–semiconductor structures obtained when InAs crystals are anodically oxidized under galvanostatic conditions at two anodizing current densities in an electrolyte containing fluoride ions, are investigated. The features of variations both in the fluorine-atom distribution and in the effective surfacestate charge on the InAs–layer interface, which are observed during layer growth, are discussed.     

Thermal stress-induced fracture of coating layer of galvannealed steel

The thermal stress-induced multiple fracture of the Fe-Zn intermetallic compound coating layer of galvannealed steel was investigated for samples with IF (interstitial free steel) and SPCC (steel plate cold commercial, Japanese Industrial Standard) as substrates. The analysis of the measured length of the multiply fractured coating layer showed that the fracture strength of the coating layer was 260–280 MPa and the residual stress around 720–740 MPa of the coating layer was reduced to around 130–140 MPa through the multiple fracture. The influences of the coating layer thickness and the stress–strain curve of the substrate on the multiple fracture behavior of the coating layer were also clarified.     

Physical and mechanical properties of silicon near the SiO2/Si interface

The influence of an oxide coating on the strength characteristics of single-crystal silicon surface layers is investigated by the microindentation method. It is shown experimentally that a strengthened layer with a thickness of 0.2–0.4 μm and a microhardness of 20–35 GPa, which is two or three times as much as the microhardness of bulk single-crystal silicon, is present near the SiO₂/Si interface. The thickness and microhardness of this layer depends on the growth conditions of the oxide. The formation of this layer is most probably caused by interstitial silicon atoms formed near the SiO₂/Si interface during silicon oxidation.     

表面钝化前后Al0.22Ga0.78N/GaN异质结势垒层应变的高温特性

用高分辨X射线衍射仪(HRXRD)研究了表面钝化前后Al_0.22Ga_0.78N/ GaN异质结势垒层应变的高温特性，温度变化范围从室温到813K.结果表明，对未钝化的异质 结，当测试温度高于523K时，Al_0.22Ga_0.78N势垒层开始出现应变 弛豫；钝化后，在Al_0.22Ga_0.78N势垒层中会产生一个附加的平面 拉伸应变，并随着温度的增加，势垒层中的平面拉伸应变会呈现出一个初始的增加，接着应 变将减小，对100nm厚的Al_0.22Ga_0.78N势垒层，应变只是轻微地减 小，但对于50nm厚的Al_0.22Ga_0.78N势垒层，则出现了严重的应变 弛豫现象. 关键词： 0.22Ga_0.78N/GaN异质结')" href="#">Al_0.22Ga_0.78N/GaN异质结 应变 3 N₄钝化')" href="#">Si₃ N₄钝化 高温XRD