Effects of different deposition conditions on the properties of Cu2S thin films

Cu₂S thin films deposited on glass substrate by chemical bath deposition were studied at different deposition temperatures and times. The results of X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive X-ray analysis (EDX), the Hall Effect measurement system and UV-Vis absorption spectroscopy indicate that both deposition temperature and time are important to obtain polycrystalline thin films. XRD showed that the polycrystalline Cu₂S thin films have monoclinic structure. Meanwhile, the structural variations were analyzed using SEM. EDX analysis results of the thin film showed that the atomic ratio of Cu/S was close to 2:1. It was found from the Hall Effect measurement that the resistivity varied from 4.59?×?10^?3 to 13.8?×?10^?3 (Ω?cm). The mobility values of the Cu₂S thin films having p-type conductivity varied from 15.16 to 134.6?cm²/V.s. The dark electrical resistivity measurements were studied at temperatures in the range 303–423?K. The electrical activation energies of Cu₂S thin films were calculated by using Arrhenius plots, from which two different activation energy values are estimated for each thin film. Using UV-Vis absorption spectroscopy (Ultraviolet/visible), the direct and indirect allowed optical band gap values were determined to lie between 2.16 and 2.37?eV and 1.79 and 1.99?eV, respectively. In addition, the values of the refractive index (n) and the extinction coefficient (k) were determined.     

Swift ion irradiation effect on high-k ZrO2- and Al2O3-based MOS devices

This paper describes the heavy ion-induced effects on the electrical characteristics of reactively sputtered ZrO₂ and Al₂O₃ high-k gate oxides deposited in argon plus nitrogen containing plasma. Radiation-induced degradation of sputtered high-k dielectric ZrO₂/Si and Al₂O₃/Si interface was studied using 45?MeV Li³⁺ ions. The devices were irradiated with Li³⁺ ions at various fluences ranging from 5?×?10⁹ to 5?×?10¹²?ions/cm². Capacitance–voltage and current–voltage characteristics were used for electrical characterization. Shift in flat band voltage towards negative value was observed in devices after exposure to ion radiation. Post-deposition annealing effect on the electrical behavior of high-k/Si interface was also investigated. The annealed devices showed better electrical and reliability characteristics. Different device parameters such as flat band voltage, leakage current, interface defect density and oxide-trapped charge have been extracted.The surface morphology and roughness values for films deposited in nitrogen containing plasma before and after ion radiation are extracted from Atomic Force Microscopy.     

Formation of highly textured (1 1 1) Bi2O3 films by anodization of electrodeposited bismuth films

Highly textured bismuth oxide (Bi₂O₃) thin films have been prepared using anodic oxidation of electrodeposited bismuth films onto stainless steel substrates. The Bi₂O₃ films were uniform and adherent to substrate. The Bi₂O₃ films were characterized for their structural and electrical properties by means of X-ray diffraction (XRD), electrical resistivity and dielectric measurement techniques. The X-ray diffraction pattern showed that Bi₂O₃ films are highly textured along (1 1 1) plane. The room temperature electrical resistivity of the Bi₂O₃ films was 10⁵ Ω cm. Dielectric measurement revealed normal oxide behavior with frequency.     

Metal-insulator transition in electron-doped Ba1−x La x MnO3 compounds

Electron-doped (Ba_1−x La _x )MnO₃ compounds were prepared for x=0−0.5. Measurements of X-ray diffraction (XRD) at room temperature and temperature variation of dc electrical resistivity down to 20 K were carried out. Samples with x=0.2–0.5 exhibit metal-insulator (M-I) transition. The maximum M-I transition temperature (T _c) of 289 K was observed for 30% of La doping (x=0.3). XRD patterns of these samples (x=0.2−0.5) were analyzed using Rietveld refinement. These samples are found to be mostly in single-phase form with orthorhombic symmetry (space group Pbnm). We have found strong correlation between Mn-O-Mn bond angles and T _c of M-I transition. The resistivity data below T _c could be fitted to the expression ρ=ρ ₁+ρ ₂ T ² and this shows that double exchange interaction plays a major role even in Mn⁴⁺-rich compound. Above T _c the resistivity data were fitted to variable range hopping and small polaron models.     

Annealing effects on the structural and electrical transport properties of n-type Bi2Te2.7Se0.3 thin films deposited by flash evaporation

N-type Bi₂Te_2.7Se_0.3 thermoelectric thin films with thickness 800 nm have been deposited on glass substrates by flash evaporation method at 473 K. Annealing effects on the thermoelectric properties of Bi₂Te_2.7Se_0.3 thin films were examined in the temperature range 373-573 K. The structures, morphology and chemical composition of the thin films were characterized by X-ray diffraction, field emission scanning electron microscope and energy dispersive X-ray spectroscopy, respectively. Thermoelectric properties of the thin films have been evaluated by measurements of the electrical resistivity and Seebeck coefficient at 300 K. The Hall coefficients were measured at room temperature by the Van der Pauw method. The carrier concentration and mobility were calculated from the Hall coefficient. The films thickness of the annealed samples was measured by ellipsometer. When annealed at 473 K, the electrical resistivity and Seebeck coefficient are 2.7 mΩ cm and −180 μV/K, respectively. The maximum of thermoelectric power factor is enhanced to 12 μW/cm K².     

Influence of nanocrystalline phases on the electrical properties of lithium titanate phosphate glass ceramics mixed with Ga2O3 nanocrystals

Several glass ceramic compositions dispersed with Ga₂O₃ nanocrystals, in the series samples (100???x)[0.4Li₂O–0.1TiO₂–0.5P₂O₅]?+?xGa₂O₃ with x?=?0, 2, 4, 6, 8, and 10?mol% of Ga₂O₃ were synthesized via high-energy ball milling technique and labeled as lithium gallium titanate phosphate glass (LTPG _x ) (x is the mol% of Ga₂O₃ nanocrystals). The compositions have been selected on the basis of thermal stability data obtained from differential thermal analysis. X-ray diffraction studies indicate nanocrystalline phase formation in the controlled crystallized glasses. The variation of electrical conductivity was explained in the light of growth of nanocrystalline phases. The best bulk conductivity (σ?=?7.03?×?10^?4?S?cm^?1, at 303?K) was achieved by the sample containing 8?mol% of Ga₂O₃ nanocrystals content, labeled as LTPG₈ sample. The activation energy for conduction (E_{a σ} ) is obtained from the temperature dependent of conductivity data, which is fitted to Arrhenius equation. The single super curve in the scaling spectra suggested the temperature-independent relaxation phenomenon.     

Magnetotransport of the low-carrier density one-dimensional S=1/2 antiferromagnet Yb4As3

The transport properties of the semimetallic quasi-one-dimensional S=1/2 antiferromagnet Yb₄As₃ have been studied by performing low-temperature (T≥0.02 K) and high magneticfield (B≤60 T) measurements of the electrical resistivity ρ(T, B). For T ≿ 2 K a ‘heavy-fermion’-like behavior Δρ(T)=AT ² with huge and nearly field-independent coefficient A ≈ 3 μΩ cm/K² is observed, whereas at lower temperatures ρ(T) deviates from this behavior and slightly increases to the lowest T. In B>0 and T ≾ 6 K the resistivity shows an anomalous magnetic-history dependence together with an unusual relaxation behavior. In the isothermal resistivity Shubnikov-de Haas (SdH) oscillations, arising from a low-density system of mobile As-4p holes, with a frequency of 25 T have been recorded. From the T- and B-dependence of the SdH oscillations an effective carrier mass of (0.275±0.005)m ₀ and a charge-carrier mean-free path of 215 ? are determined. Furthermore, in B≥15 T, the system is near the quantum limit and spin-splitting effects are observed.     

Influence of Y2Cu2O5 nanoparticles doping on superconducting properties of YBa2Cu3O7-δ

ABSTRACT

The blue phase of YBa₂Cu₃O_{7- δ} (YBCO) family, Y₂Cu₂O₅ (Y202) nanoparticles were prepared and doped into (YBCO) superconductor and the effect of doping on critical current density and critical temperature was investigated. Y202 nanoparticles with particle sizes of 47, 107 and 206?nm were prepared by a sol–gel combustion method and added into the YBCO superconductor by 0.5–2?wt.%. XRD and scanning electron microscope measurements were used to characterize the samples. The measurement of critical current density at 77?K revealed that the doped superconductors had larger critical current density compared to the undoped superconductors. For a fixed dopant concentration, by increasing the size of nanoparticles, the J_c was increased. For the samples including 0.5?wt.% of nanoadditives, J_c was higher. The highest critical current density of 137?A/cm² was measured for the superconductors containing 0.5?wt.% of 206?nm Y202 nanoparticles. Also, by increasing the nanoparticles concentration, the T_c was reduced.     

Chemical synthesis of spinel nickel ferrite (NiFe2O4) nano-sheets

The present investigation is related to the deposition of single-phase nano-sheets spinel nickel ferrite (NiFe₂O₄) thin films onto glass substrates using a chemical method. Nano-sheets nickel ferrite films were deposited from an alkaline bath containing Ni²⁺ and Fe²⁺ ions. The films were characterized for their structural, surface morphological and electrical properties by means of X-ray diffraction (XRD), transmission electron microscope (TEM), Fourier transform infrared spectroscopy (FT-IR), scanning electron microscopy (SEM), and two-point probe electrical resistivity techniques. The X-ray diffraction pattern showed that NiFe₂O₄ nano-sheets are oriented along (3 1 1) plane. The FT-IR spectra of NiFe₂O₄ films showed strong absorption peaks around 600 and 400 cm⁻¹ which are typical for cubic spinel crystal structure. Microstructural study of NiFe₂O₄ film revealed nano-sheet like morphology with average sheet thickness of 30 nm. The room temperature electrical resistivity of the NiFe₂O₄ nano-sheets was 10⁷ Ω cm.     

NTCR behavior of Sm-substituted barium zirconium titanate nanocrystalline solid solution

Ceramic solid solution of nanocrystalline barium zirconium titanate in the form of Ba(Zr_0.52Ti_0.48)O₃ substituted by samarium (Sm³⁺) was prepared using the conventional solid state reaction method. The phase assemblage analyzed by the X-ray diffraction technique was fitted for cubic-crystal-symmetry. The change in the grain size depicted the influence of Sm³⁺ ions on the microstructure. The electrical behavior was studied in the temperature range from 323 to 773 K. The sintered samples exhibited a negative temperature coefficient of resistance (NTCR) and superior semiconducting behavior above 513 K. Addition of Sm³⁺ increased the room temperature resistivity of Ba(Zr_0.52Ti_0.48)O₃ solid solution. The results obtained from the thermoelectric power measurement confirm electrons as the majority charge carriers.     

烧结温度对La0.9Sr0.1FeO3热电性能的影响

利用传统的固相反应分别在1250℃,1300℃,1350℃.烧结条件下制备出钙钛矿结构的La_0.9Sr_0.1FeO₃陶瓷样品.样品的XRD粉末衍射结果显示不同烧结温度的La_0.9Sr_0.1FeO₃陶瓷样品都是单相的正交结构,同时晶胞体积随着烧结温度的升高而减小.从样品的SEM结果看出,随着烧结温度的升高,晶粒逐渐变大,并且晶粒间的空隙逐渐减小,样品更加致密.在室温到800℃的 关键词： 铁酸镧陶瓷 热电性能 烧结温度     

Dielectric behavior and low temperature phase transition in NH4IO3

The electrical properties namely ac conductivity σ(ω,?T) and the complex dielectric permittivity (ε*) are measured at selected frequencies (5–100?kHz) as function of temperature (95?K?T?4IO₃. The ferroelectric hysteresis loops and the X-ray diffraction pattern are also measured. The analysis of the data indicates that the compound undergoes a structural phase transition at ～103?K and the behavior of σ(ω,?T) obeys the power law. The trend of the temperature dependence of the angular frequency exponent s (0?s?4IO₃; (2) the data indicate that the compound undergoes a structural phase transition at 103?K; (3) the originality of this transition has been confirmed by X-ray diffraction; (4) no evidence for the existence of a ferroelectric transition at 103?K as mentioned earlier; and (5) the quantum mechanical tunneling is proposed as the main mechanism of the electric conduction.     

Optoelectronic properties of Cu1−xPtxFeO2 (0 ≤ x ≤ 0.05) delafossite for p-type transparent conducting oxide

The samples of Cu_1−xPt_xFeO₂ (0 ≤ x ≤ 0.05) delafossite have been synthesized by solid-state reaction method to investigate their optical and electrical properties. The properties of electrical resistivity and Seebeck coefficient were measured in the high temperature ranging from 300 to 960 K, and the Hall effect and the optical properties were measured at room temperature. The obtained results of Seebeck showed the samples are p-type conductor. The optical properties at room temperature exhibited the samples are transparent visible light material with optical direct gap 3.45 eV. The low electrical resistivity, hole mobility and carrier density at room temperature displayed value ranging from 0.29 to 0.08 Ω cm, 1.8 to 8.6 cm²/V s and 1.56 × 10¹⁸ to 4.04 × 10¹⁹ cm⁻³, respectively. The temperature range for transparent visible light is below 820 K because the direct energy gap contains value above 3.1 eV. Consequently, the Cu_1−xPt_xFeO₂ delafossite enhance performance for materials of p-type transparent conducting oxide (TCO) with low electrical resistivity.     

Thermoluminescence of Chromium Doped Cd2Nb2O7 Crystals

The exposure of the Cd₂Nb₂O₇:Cr crystal to monochromatic light with wavelength shorter than 600 nm at 12 K decreases the Cr^3? photoluminescence emission and allows us to observe thermoluminescence within 60–200 K during subsequent heating of the crystal at a rate of 0.077 K/s. The glow curve of thermoluminescence revealed a rather complex structure with two pronounced intensive glow peaks at 91 and 180 K and four rather weak peaks at 99, 117, 132, and 155K. An analysis of the glow peaks by “an initial rise” gave evidence of many various charge carrier traps with activation energies from 150 to 470 meV. Since a comparison of the thermoluminescence and photoluminescence emission spectra showed that these spectra are identical, it was concluded that the thermoluminescence glow peaks are associated with thermal release of charge carriers from shallow traps followed by Cr^4?→Cr^3?(²E) and/or Cr^2?→Cr^3?(²E) charge capture and ²E→⁴A₂ radiative decay of Cr^3?(²E) ions.     

High temperature thermoelectric properties of highly c-axis oriented Bi2Sr2Co2Oy thin films fabricated by pulsed laser deposition

High-temperature thermoelectric transport property measurements have been performed on the highly c-axis oriented Bi2Sr2Co20v thin films prepared by pulsed laser deposition on LaA1Oa （001）. Both the electric resistivity p and the seebeck coefficient S of the film exhibit an increasing trend with the temperature from 300 K-1000 K and reach up to 4.8 m. cm and 202 V/K at 980 K, resulting in a power factor of 0.85 mW/mK which are comparable to those of the single crystalline samples. A small polaron hopping conduction can be responsible for the conduction mechanism of the film at high temperature. The results demonstrate that the Bi2Sr2Co2Oy thin film has potential application has high temperature thin film thermoelectric devices,     

Characterization of organic–inorganic hybrid layered perovskite and intercalated compound (n-C12H25NH3)2ZnCl4

We report on some electrical properties and solid–solid phase transitions of organic–inorganic hybrid layered halide perovskite and intercalated compound (n-C₁₂H₂₅NH₃)₂ZnCl₄ which is one member of the long-chain compounds of the series (n-C_nH_2n+1NH₃)_2,(n = 8–18). The complex dielectric permittivity ?*(ω,T) and the ac conductivity σ (ω,T) were measured as functions of temperature 100 K < T < 390 K and frequency 5 kHz < f < 100 kHz. Moreover, the differential scanning calorimetery and the differential thermal analysis thermograms were performed. The analysis of our data confirms the existence of a structural phase transition at T ≈ (362?±?2) K, where the compound changes its state from intercalation to non-intercalation with a drastic increase in the c-axis by about 16.4%.

The behavior of the frequency-dependent conductivity follows the Jonscher universal power law: σ (ω, T) α?^s(?,T). The mechanism of electrical conduction in the low-temperature phase (phase II) can be described as quantum mechanical tunneling model.     

SrB4O7:Sm2+: an optical sensor reflecting non-hydrostatic pressure at high-temperature and/or high pressure in a diamond anvil cell

A systematic investigation on the fluorescent spectra of SrB₄O₇:Sm²⁺ was performed in detail at high-temperature up to 623?K and/or high pressure up to 23.2?GPa with different pressure-transmitting media (PTMs), respectively. Combined with experiment data of previous research, the change of the ⁷D₀–⁵F₀ line (0–0 line) full width at half maximum (FWHM) of SrB₄O₇:Sm²⁺ under different pressure environments was specifically discussed. The results indicate that the FWHM of 0–0 line is sensitive to the non-hydrostatic pressure environment in 2-propanol, and methanol and ethanol mixture (ME) PTMs at ambient temperature. The first-order and the second-order derivation of the temperature dependence of 0–0 line FWHM at ambient pressure are 1.48(±0.21)?×?10^?4?nm/K and 9.63(±0.63)?×?10^?7?nm²/K² below 623?K. The 0–0 line FWHM is also sensitive to the non-hydrostatic pressure environment in ME at high-temperature and high pressure simultaneous, the non-hydrostatic transition pressures are 9.6?GPa at 323?K, 11.0?GPa at 373?K, 14.4?GPa at 423?K, respectively. SrB₄O₇:Sm²⁺ is recommended as an optical sensor to reflect the change of pressure environment in liquid media at high-temperature and/or high pressure.     

Spin-glass, antiferromagnetism and kondo behavior in Ce2Au1−x Co x Si3 alloys

Recently, the solid solution Ce₂Au_{1− x Co} xSi₃ has been shown to exhibit many magnetic anomalies associated with the competition between magnetic ordering and the Kondo effect. Here we report high pressure electrical resistivity of Ce₂AuSi₃, ac susceptibility (X) and magnetoresistance of various alloys of this solid solution in order to gain better knowledge of the magnetism of these alloys. High pressure resistivity behavior is consistent with the proposal that Ce₂AuSi₃ lies at the left-hand side of the maximum in Doniach’s magnetic phase diagram. The ac X data reveal that there are in fact two magnetic transitions, one at 2 K and the other at 3 K for this compound, both of which are spin-glass-like. However, as the Co concentration is increased, antiferromagnetism is stabilized for intermediate compositions before attaining non-magnetism for the Co end member.     

机械合金化过程对硫化铋块体热电性能的影响机理

以机械合金化法(MA)结合放电等离子烧结技术(SPS)制备了Bi₂S₃多晶块体热电材料. 研究了MA过程中干磨转速、湿磨时间和湿磨介质对Bi₂S₃多晶热电材料电传输性能的影响. 分析了样品的物相, 观察了显微组织, 测试了电传输性能和热传输性能. 研究表明, 以无水乙醇为湿磨介质时, 随着湿磨时间的延长, 出现了微量Bi₂O₃第二相, 样品的晶粒尺寸减小, 电阻率大幅增加, 功率因子下降. 以丙酮为湿磨介质时, 虽然不存在微氧化反应, 但是由于样品中存在大量孔洞, 导致功率因子降低. 425 r/min 干磨15 h后未湿磨的样品在573 K取得最大的ZT值0.25, 是目前文献报道的最高值.     

Ca3－x AgxCo4O9(x=0—0.05)氧化物的电输运性能

Ca位掺杂可以优化Ca₃Co₄O₉复合氧化物的电输运性能. 采用柠檬酸溶胶凝胶结合放电等离子烧结制备了Ca位微量掺杂Ag的Ca_3-xAg_xCo₄O₉(x=0—005)氧化物块体试样,通过X射线衍射、扫描电子显微镜、电参数测试仪分析了所得试样. 试验结果表明: 产物呈单一物相,Ca位微量掺杂Ag降低了Ca_{关键词： 3}Co₄O₉')" href="#">Ca₃Co₄O₉ 掺杂 电输运