Carrier transport in In-doped CuO thin films

Temperature-dependent conductivity and thermopower measurements are carried out for undoped and In-doped CuO thin films. We investigate the effects of In-doping on carrier transport properties of CuO thin films in the temperature range of 300?<?T?<?400?K. Carrier transport is dominated by simple thermally activated conduction in the undoped film. On the other hand, small polarons play an essential role in the carrier transport properties in the In-doped films. By increasing the In content, the conduction behaviour transits from adiabatic limit to the non-adiabatic limit, and the conductivity decreases.     

六方InN薄膜的载流子输运特性研究

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多晶TaN1-δ薄膜的电输运性质研究

利用射频溅射法在石英玻璃基底上制备了一系列面心立方结构的多晶TaN_1-δ薄膜, 并对其晶体结构和2–350 K温度范围的电子输运性质进行了系统研究. 薄膜呈多晶结构, 并且平均晶粒尺寸随着基底温度的升高逐渐增大. 电输运测量结果表明, TaN_1-δ薄膜在5 K以下表现出类似超导体-绝缘体颗粒膜的电输运性质; 随着温度的升高, 薄膜在10–30 K表现出类似金属-绝缘体颗粒膜的性质; 在70 K以上, 热涨落诱导的遂穿导电机理主导着电阻率的温度行为. 我们的结果表明: TaN_1-δ多晶薄膜的类颗粒膜属性使其具有较高的电阻率和负的电阻温度系数.     

The electrical transport properties of thin metal films containing neutral impurities

Summary In this paper we have calculated the expressions for the electrical conductivity and the thermoelectric power of thin metal films containing unionized or neutral impurities and having equal surface specularity parameters. The calculation is based on the solutions of the Boltzmann transport equation in the presence of a weak electric field and a small temperature gradient. The results indicate that the electrical conductivity decreases whereas the thermoelectric power increases.     

TiO2 thin films for spintronics application: a Raman study

We present the results of a systematic study performed by micro‐Raman spectroscopy on pure anatase, pure rutile and mixed anatase–rutile TiO₂ thin films, deposited by radio frequency magnetron sputtering on quartz substrates, with different thicknesses. The crystal structures of the as‐deposited films were unambiguously determined and a good crystalline homogeneity was revealed by a systematic mapping of the samples. In the mixed‐phase films, the relative amount of the two phases was monitored by a simple analysis of the components of the multi‐Lorentzian fitting curves. For the single‐phase films, the influence of the thickness and the effect of different thermal treatments, carried out to obtain series of thin films differing only for oxygen content, are discussed. The analysis of the scattered light has provided indication about the presence of an interface layer between the substrate and the film, which can play a role in driving the interesting magnetic properties exhibited by our samples, which are of potential usefulness for spintronics application. The results obtained from other techniques are briefly reported and discussed in relation to our systematic Raman characterization. This study points out how Raman investigation can provide suggestions toward the understanding of the complex physical phenomena leading to room‐temperature ferromagnetism in TiO₂ thin films. Copyright © 2009 John Wiley & Sons, Ltd.     

Electron transport in thin metal films having ionized impurities and unequal surface specularity parameters

Summary In this paper analytical expressions for the electrical conductivity and thermoelectric power of thin metal films have been calculated for films containing ionized impuritiesand having unequal surface specularity parameters. The effects of alteration in the energy dependence of the electron relaxation time as well as unequal probabilities of scattering from the two surfaces are thus completely taken into account.     

Platinum role in hydrophilicity enhancement of Cr-doped TiO2 thin films

In this paper, we have investigated the hydrophilic properties of the titania films doped with increasing chromium percentages (from 2.1 at.% till 4.0 at.%). Cr-doping induces an increase in the rutile weight %, a more compact structure, and a significant red shift of the TiO₂ absorption edge, the last property being very important in the self cleaning applications. For the chosen Cr concentrations, the films did not show promising hydrophilic properties. To improve them, we have applied a novel surface modification method, reported in literature mainly for powders, namely, surface metallisation. We have observed that, by depositing Pt islands on the film with the highest Cr content, its hydrophilic properties improve for a certain metal coverage area. The explanation was based on FT-IR and X-ray photoelectron spectroscopy analysis, performed on the UV irradiated and non-irradiated films, which gives information on the relationship between hydrophilicity and the amount of the adsorbed hydroxyl groups.     

Structural and transport properties of Li-intercalated vanadium pentoxide nanocrystalline films

The X-ray diffraction (XRD), transmission electron microscopy, density, electrical and thermoelectric power (TEP) properties of nanocrystalline Li _x V₂O₅ ? nH₂O xerogel films (0 ≤ x ≤ 22 mol.%) were investigated. The films were produced by the sol–gel technique (colloidal route), which was used to enable high-purity, uniform preparation. The relative intensity of the (002) XRD line increased with increasing Li content. The particle size was found to be about 6.0 nm. Electrical conductivity and thermoelectric power were measured parallel to the substrate surface in the temperature range 300–480 K for the as-prepared films. The electrical conductivity showed that all the samples were semiconductors and that conductivity increased with increasing Li content. The conductivity of the present system was primarily determined by hopping carrier mobility, which was found to vary from 6.81 × 10^?6 to 0.33 × 10^?6 cm² V^?1 s^?1 at 380 K. The carrier density was evaluated to be 8.73 × 10¹⁹–1.118 × 10²¹ cm^?3. The conduction was confirmed to obey non-adiabatic small polaron hopping. The thermoelectric power, or Seebeck effect, increased with increasing Li content. The results obtained indicate an n-type semiconducting behavior within the temperature range investigated.     

On the mechanism of electronic transport in polycrystalline CdO thin films

Cadmium Oxide (CdO) thin films (d = 0.16−0.62 μm) were deposited onto glass substrates by thermal evaporation under vacuum (quasi closed volume technique) of high purity (99.99%) CdO polycrystalline powders. The substrate temperature was 300 and 473 K, respectively. After a post-deposition heat treatment, the temperature dependence of the electrical conductivity becomes reversible. The electronic transport mechanism in studied samples is explained in terms of Seto’s model for polycrystalline semiconducting films. The values of optical bandgap have been determined from absorption spectra.     

Inverted organic solar cells with solvothermal synthesized vanadium-doped TiO_2 thin films as efficient electron transport layer

We investigated the effects of using different thicknesses of pure and vanadium-doped thin films of TiO_2 as the electron transport layer in the inverted configuration of organic photovoltaic cells based on poly(3-hexylthiophene) P3HT:[6-6] phenyl-(6) butyric acid methyl ester(PCBM). 1% vanadium-doped TiO_2nanoparticles were synthesized via the solvothermal method. Crystalline structure, morphology, and optical properties of pure and vanadium-doped TiO_2 thin films were studied by different techniques such as x-ray diffraction, scanning electron microscopy, transmittance electron microscopy, and UV–visible transmission spectrum. The doctor blade method which is compatible with roll-2-roll printing was used for deposition of pure and vanadium-doped TiO_2 thin films with thicknesses of 30 nm and 60 nm. The final results revealed that the best thickness of TiO_2 thin films for our fabricated cells was 30 nm. The cell with vanadium-doped TiO_2 thin film showed slightly higher power conversion efficiency and great J_(sc) of 10.7 mA/cm~2 compared with its pure counterpart. In the cells using 60 nm pure and vanadium-doped TiO_2 layers, the cell using the doped layer showed much higher efficiency. It is remarkable that the external quantum efficiency of vanadium-doped TiO_2 thin film was better in all wavelengths.     

Microstructure and transport properties of various 90° grain boundaries in YBa2Cu3O7 thin films

The microstructure and transport properties of various 90° grain boundaries in (103) oriented YBa₂Cu₃O₇(YBCO) thin films grown epitaxially in situ by 90° off-axis sputtering are compared. The (103) films grown on (101) LaAlO₃ and (101) SrTiO₃ substrates have specific sets of 90° grain boundaries in both principal in-plane directions: 90° [010] twist boundaries along the [101] direction, and 90° [010] symmetrical tilt boundaries and 90° [010] basal-plane-faced tilt boundaries along the (301) direction. No weak-link behavior is observed across some of these boundaries by transport critical current density and normalized magnetic field dependence of J _c measurements along both those in-plane directions. High-resolution transmission electron microscopy reveals variations in the structure and microfaceting of the 90° boundaries, which may contribute to the absence of weak-link behavior. These results have important implications for understanding the behavior of step-edge Josephson junctions.     

Structural study of TiO2 thin films by micro-Raman spectroscopy

The Raman spectroscopy method was used for structural characterization of TiO₂ thin films prepared by atomic layer deposition (ALD) and pulsed laser deposition (PLD) on fused silica and single-crystal silicon and sapphire substrates. Using ALD, anatase thin films were grown on silica and silicon substrates at temperatures 125–425 °C. At higher deposition temperatures, mixed anatase and rutile phases grew on these substrates. Post-growth annealing resulted in anatase-to-rutile phase transitions at 750 °C in the case of pure anatase films. The films that contained chlorine residues and were amorphous in their as-grown stage transformed into anatase phase at 400 °C and retained this phase even after annealing at 900 °C. On single crystal sapphire substrates, phase-pure rutile films were obtained by ALD at 425 °C and higher temperatures without additional annealing. Thin films that predominantly contained brookite phase were grown by PLD on silica substrates using rutile as a starting material.     

Effects of photoexcitation on the current transport mechanism in amorphous indium selenide thin films

The effect of photoexcitation on the current transport mechanism in amorphous indium selenide thin films was studied by means of dark and illuminated conductivity measurements as a function of temperature. Analysis of the dark electrical conductivity in the temperature range 110–320 K reveals behaviour characteristic of carriers excited to the conduction band and thermally assisted variable-range hopping (VRH) at the Fermi level above 280 K and below 220 K, respectively. In the temperature range 220–280 K, a mixed conduction mechanism was observed. A conductivity activation energy of ～300 meV (above 280 K), a density of localised states (evaluated assuming a localisation length of 5 Å) of 1.08 × 10²¹ cm^?3 eV^?1, an average hopping distance of 20.03 Å (at 120 K) and an average hopping energy of 27.64 meV have been determined from the dark electrical measurements. When the sample was exposed to illumination at a specific excitation flux and energy, the values of the conductivity activation energy, the average hopping energy and the average hopping range were significantly decreased. On the other hand, the density of localised states near the Fermi level increased when the light flux was increased. Such behaviour was attributed to a reversible Fermi level shift on photoexcitation.     

纳米TiO_2薄膜的低温等离子体制备技术

以四氯化钛为源物质,氩气为载气,氧气为反应气体,利用低温等离子体增强化学气相沉积在硅基表面制备出了TiO2薄膜。使用场发射扫描电子显微镜、X射线衍射仪等检测分析表征TiO2薄膜的性能与性质,并探讨了工艺条件如基片材料、沉积时间和基片温度对薄膜性能的影响。结果表明:制备的薄膜表面光滑均匀,结构致密,最小晶粒尺寸约15 nm;薄膜的晶型主要依赖于沉积温度,低于300℃沉积的薄膜是无定形的,300℃之上沉积的薄膜是锐钛矿结构。     

Switching phenomena in CdIn2S4 thin films

Summary Two kinds of switching phenomena in CdIn₂S₄ polycrystalline and amorphous thin films which were prepared by the vacuum evaporation method and the d.c. sputtering method, respectively, were studied. One is the so-called memory switching phenomenon arising from the low resistive filament path. Another is a characteristic switching phenomenon in which the resistivity abruptly changes whenever the ambient temperature reaches a critical value. The switching time is fast and about 100 ns. This switching phenomenon is related to the native defects in the CdIn₂S₄ lattice, because they can be observed in the polycrystalline as well as in the amorphous thin films. Paper presented at the ?V International Conference on Ternary and Multinary Compounds?, held in Cagliari, September 14–16, 1982.     

Composition dependence of photoconductivity in amorphous thin films of Se70Te30−xSbx

Summary The present paper reports the composition dependence of steady-state and transient photoconductivity in amorphous thin films of Se₇₀Te_30-xSb_x, wherex is varied from 0 to 10. The results indicate that photoconductivity is highly composition dependent in this system and a discontinuity in various electrical parameters is observed at 4 at. % of Sb. This is explained in terms of increased disorder up to 4 at. % of Sb. However, at higher concentration of Sb, an ordered structure may be established due to the formation of microcrystalline phases as observed in X-ray diffraction patterns.     

金属有机双层膜传质模型理论研究

采用真空热蒸发方法在玻璃基板上蒸镀不同厚度的Ag/TCNQ(7，7,8,8-tetracyanoquinodimethane)双层膜.通过固体化学反应扩散，最终形成Ag-TCNQ络合物.利用透射光谱表征，研究了双层膜中的传质规律.按电子隧穿条件满足与否分别建立了隧穿模型和非隧穿模型对体系传质过程进行了理论分析，理论分析与实验结果相符.     

Extraordinary Hall effect on Fe-rich amorphous thin films and Fe-rich/Cu multilayers

In this study we investigated the magnetic and transport properties of thin Fe-rich amorphous films and Fe-rich/Cu multilayers. We compared the extraordinary Hall effect in these two types of samples and discussed it in terms of thickness and sample structure. The thicker films exhibited a strong in-plane magnetic anisotropy, and by decreasing film thickness both saturated Hall resistivity and Hall sensitivity increase. A Hall resistivity value of 20 μΩ cm is observed in 100 nm thick Fe-rich films at 12 K and a sensitivity of 1.3 Ω/T is obtained at room temperature. Electrical conductance increases and Hall resistivity decreases when the films are sandwiched with Cu.     

La2/3Ca1/3MnO3薄膜的光致电阻率变化特性

射频磁控溅射法制备了La_2/3Ca_1/3MnO₃纳米薄膜(LCMO).该薄膜发生FM-PM相变的转变点温度为T_c≈308K（近似为电阻峰值温度T_p）；在不同温度下的光电导性质实验表明所制备的LCMO薄膜在连续激光作用时低温段（Tc）表现为光致电阻率增大效应，即ΔR/R＞0，并在R-T曲线拐点附近取得极大值，（ΔR/R）_max=43.5%；当T>T关键词： 钙钛矿薄膜 光响应 电子自旋 小极化子     

Ag／TCNQ纳米双层膜中传质规律研究

采用真空蒸发的方法在玻璃基板上交替蒸发Ag和TCNQ，形成不同厚度的双层膜.利用透 射光谱作为表征，研究了双层膜中的传质规律.发现超薄膜情况时的异常加速传质现象，并 建立隧穿模型对该现象作了微观解释. 关键词： 薄膜 传质 隧穿