The energy of dislocation dipoles

In conventional dislocation theory based on the concept of Volterra dislocations, the energy of coplanar dislocation dipoles cannot be obtained without introducing an ill-defined ad hoc annihilation distance. When the dislocations are described more realistically by Peierls dislocations, absolute values for the dipole energy can be obtained from physical arguments. It is found that when dislocations in a dipole come close, they may not annihilate each other but the dipole can collapse when the dislocations have reached a critical separation of several lattice constants.     

Emission of dislocations from grain boundaries by grain boundary dissociation

In this article, we examine the conditions that favour the emission of Shockley partial dislocations (SPDs) that standoff from a grain boundary (GB) plane by a few lattice parameters as part of the atomic structure of some GBs. To do so, we consider GBs to be formed by the operation of arrays of intrinsic grain boundary dislocations (GBDs) that create the tilt and twist misorientation, and the lattice mismatch between the two crystal grains adjoining the GB. The conditions to be considered that favour SPDs are the following: (1) Frank’s rule, (2) the proper sequential arrangement of partial dislocations to bound an intrinsic stacking fault and (3) the equilibrium stand-off distance (ESD). We apply an isotropic elasticity analysis to compute the ESD, in the absence of an applied stress, for SPDs emerging from asymmetric tilt GBs in two FCC metals, Cu and Al. The ESD is shown to be dependent on the glide plane orientation relative to the GB plane and on the position of the glide planes, relative to the position of the GBDs. An applied stress increases the ESD up to a critical stress that removes the SPDs without limit from the GB. We examine the effect of the stacking fault energy on the ESD and critical stress. The critical stress is effectively linearly dependent on the stacking fault energy. Finally, we present results of atomistic simulations of asymmetric tilt Σ11[1?0?1]{4?1?4}||{2?5?2} GBs in Cu bicrystal models subject to shock loading that behave in a manner similar to the elasticity predictions. The atomistic simulations reveal additional behaviour associated with elastic incompatibility between the two grains in the bicrystal models.     

Computer simulation of the vacancy defects interaction with shuffle dislocation in silicon

The interactions between the 60^° shuffle dislocation and two different types of vacancy defects in silicon are separately studied via the molecular dynamics simulation method. The Stillinger–Weber potential is used to describe the atomic interactions. The results show that the dislocation slip velocity will decrease due to the interaction with the vacancy cluster (V ₆). The simulation also reveals that the divacancy will be absorbed by the dislocation. Meanwhile, a climbing of the dislocation occurs during their interactions. However, the divacancy has little effect on the dislocation slip velocity. Based on the above results, the decrease in threading dislocation density in SiGe/Si heterostructures with the use of low-temperature Si buffer layer may be explained.     

Atomistic simulation of kink structure on edge dislocation in bcc iron

Based on the general theory of dislocation and kink, we have constructed the three kink models corresponding to the 1/2 （111）{011} and 1/2 （111）{112} edge dislocations （EDs） in bcc Fe using the molecular dynamics method. We found that the geometric structure of a kink depends on the type of ED and the structural energies of the atom sites in the dislocation core region, as well as the geometric symmetry of the dislocation core and the characteristic of the stacking sequence of atomic plane along the dislocation line. The formation energies and widths of the kinks on the 1/2 （111）{011} and 1/2 （111）{112} EDs are calculated, the formation energies are 0.05eV and 0.04eV, and widths are 6.02b and 6.51b, respectively （b is the magnitude of the Burgers vector）. The small formation energies indicate that the formation of kink in the edge dislocation is very easy in bcc Fe.     

TEM imaging of an inclined dislocation in an anisotropic thin foil

The elastic distortions nearby the two emerging points of a straight inclined dislocation located in an elastically anisotropic thin foil are expressed with the aid of the integral formalism [D.M. Barnett and J. Lothe, Phys. Norv. 7 (1973) p.13], an approach complementary to that of the Eshelby's “sextic” formalism. They are included in the calculation of the intensities of diffracted beams in transmission electron microscopy to produce theoretical images, a well known procedure when elastic free surface relaxation is ignored. Examples of theoretical images point out some contrast differences between images calculated with the assumptions of isotropic and anisotropic crystals. These calculations can be simplified for a dislocation normal to the surface and a line direction parallel to a two-fold axis.     

The interaction between a screw dislocation and an interfacial cruciform crack and collinear linear cracks

The interaction between a screw dislocation and an interfacial cruciform crack and collinear linear cracks under loads at infinity was investigated. General solutions of complex potentials to this problem were derived by using complex potential theory. As illustrative examples, the closed form solution for a screw dislocation interacting with an interfacial cruciform crack and a linear crack is obtained. The stress intensity factor and critical stress intensity factor for dislocation emission are also calculated. The results show that the shielding effect increases with the increase of the shear modulus and the distance between the two cracks, but it decreases with the increase of dislocation azimuth and the distance between the dislocation and the cruciform crack tip. The critical loads at infinity for dislocation emission increase with the increment of the emission angle, the distance the two cracks and the vertical length of the cruciform crack.     

Cu刃型扩展位错附近局部应变场的原子模拟研究

通过结合virial应变分析技术的准连续介质多尺度模拟方法研究了金属Cu刃型扩展位错的局部应变场.结果表明在距离位错核心几十纳米的区域内晶体处于小变形状态,virial应变计算结果与弹性理论预测结果符合得相当好,当距离位错核心仅几纳米时,晶格畸变加剧,virial应变极大值出现在扩展位错两端的Shockley分位错芯部.进一步分析表明Shockley分位错芯部严重畸变区大致呈长轴7b1、短轴3b1的椭圆形,其中b1为分位错柏氏矢量的长度.     

The interaction between a screw dislocation and a wedge-shaped crack in one-dimensional hexagonal piezoelectric quasicrystals

Based on the fundamental equations of piezoelasticity of quasicrystal material,we investigated the interaction between a screw dislocation and a wedge-shaped crack in the piezoelectricity of one-dimensional hexagonal quasicrystals.Explicit analytical solutions are obtained for stress and electric displacement intensity factors of the crack,as well as the force on dislocation.The derivation is based on the conformal mapping method and the perturbation technique.The influences of the wedge angle and dislocation location on the image force are also discussed.The results obtained in this paper can be fully reduced to some special cases already available or deriving new ones.     

Elastic energy of a straight dislocation and contribution from core tractions

We derive an expression of the core traction contribution to the dislocation elastic energy within linear anisotropic elasticity theory using the sextic formalism. With this contribution, the elastic energy is a state variable consistent with the work of the Peach–Koehler forces. This contribution needs also to be considered when extracting from atomic simulations core energies. The core energies thus obtained are real intrinsic dislocation properties: they do not depend on the presence and position of other defects. This is illustrated by calculating core energies of edge dislocation in bcc iron, where we show that dislocations gliding in {110} planes are more stable than those gliding in {112} planes.     

基于点缺陷扩散理论与离散位错动力学耦合的位错攀移模型研究

位错的攀移运动对高温下晶体材料的塑性行为有重要影响,为了能够有效揭示攀移的物理本质及其对塑性行为的作用,本文基于点缺陷扩散理论,通过将体扩散和管扩散机理的共同作用与三维离散位错动力学耦合,建立了适用条件更广的位错攀移模型. 利用此模型我们模拟了单个及多个棱柱型位错环的收缩变形过程,发现影响位错攀移速率的决定因素不是传统理论认为的机械攀移力,而是位错周围(体扩散)及位错段上(管扩散)的空位浓度梯度. 该模型也能够完全重现棱柱型位错环群的粗化过程中不同位错环半径及晶体内平均空位浓度随时间变化的三个阶段. 关键词： 位错攀移 点缺陷扩散理论 位错动力学 棱柱位错环     

Non-stoichiometry in MgAl2O4 spinel

Stoichiometric magnesium aluminate spinel, MgAl₂O₄, contains equimolar proportions of Al₂O₃ and MgO. Spinel can, however, exhibit significant deviations from this stoichiometric composition. There is considerable disagreement concerning which species compensate for either excess Al₂O₃ or MgO non-stoichiometry. Here, we use empirical and quantum mechanical (density functional theory) atomistic simulation techniques to investigate the defect chemistry accommodating non-stoichiometry. The incorporation of excess Al₂O₃ was found to be a lower energy process than the solution of excess MgO. Elevated magnesium and aluminium cation vacancy defect concentrations are predicted in Al₂O₃ rich spinels, whilst MgO excess is facilitated by a combination of oxygen vacancy and magnesium interstitial defects.     

二维声子晶体同质位错结缺陷态特性

利用平面波展开法结合超原胞的方法研究了二维声子晶体同质位错结的缺陷态.分别研究了横向位错和纵向位错两种情况，研究结果表明：横向位错效应与线缺陷相似，它可以使处于禁带频率范围内的声波沿位错通道进行传播，形成声波导；纵向位错效应则类似于点缺陷，位错线两边三个最接近的散射子形成腔，因而能够产生局域模.另外，横向位错距离和纵向位错距离的大小将影响缺陷带的位置和数量，因此，可以通过调节横向位错距离或纵向位错距离来人为的控制同质位错结中的缺陷带. 关键词： 声子晶体 同质位错结 缺陷态     

Effect of isotropic stress on dislocation bias factor in bcc iron: an atomistic study

The effect of externally applied stress on the dislocation bias factor (BF) in bcc iron has been studied using a combination of atomistic static calculations and finite element integration. Three kinds of dislocations were considered, namely, a₀/2〈1 1 1〉{1 1 0} screw, a₀/2〈1 1 1〉{1 1 0} edge and a₀〈1 0 0〉{0 0 1} edge dislocations. The computations reveal that the isotropic crystal expansion leads to an increasing or constant dislocation bias, depending on the Burgers vector and type of dislocation. On the other hand, compressive stress reduces the dislocation bias for all the dislocations studied. Variation of the dislocation BF depending on dislocation type and Burgers vector is discussed by analysing the modification of the interaction energy landscape and the capture efficiency values for the vacancy and self-interstitial atom.     

Generation and accumulation of atomic vacancies due to dislocation movement and pair annihilation

Generation and accumulation of atomic vacancy due to pair annihilation of edge dislocations during plastic slip deformation of metallic materials are numerically evaluated by crystal plasticity analysis. Dislocation density-based models are utilised in the deformation analysis and a theoretical model for the generation of atomic vacancies is introduced. Purely uniform single- and double-slip deformations are analysed and results show that the evolution of the vacancy density depends largely on the microstructure length scale and multiplication of slip activity on different slip systems.     

Channel formation and multiplication in irradiated FCC metals: a 3D dislocation dynamics investigation

Our goal in this work is to investigate post-irradiation tensile deformation of FCC grains using 3D dislocation dynamics (DD) simulations. We focus on irradiation dose conditions where plastic strain is expected to localize into defect-depleted channels. Two DD simulation types are used for treating distinct space and time scale effects. Type-I simulations describe the formation of single dislocation channels at a high resolution (nm). Here, the irradiation-induced defects are described explicitly, in the form of prismatic dislocation loops. Type-II simulations are used to describe the channel multiplication process itself, i.e. at the grain scale (μm). This time, the irradiation-induced defects are treated in a simplified way, taking advantage of Type-I simulation results. Simulated channel spacing is found to depend on three main input parameters: the dose-dependent stress level, grain size and critical cross-slip stress. The results are rationalized in terms of a micro-model based on simple, finite-sized dislocation arrangements. The model is further validated by comparison with available experimental evidence.     

一维六方准晶中螺形位错与楔形裂纹的相互作用

采用保角映射方法和扰动技巧,研究了一维六方准晶中螺形位错和半无限楔形裂纹的相互作用. 讨论了位错的位置和楔形角对作用在位错上的力的影响,得到了应力强度因子和作用在 位错上的力的解析解.此外,还详细地讨论了位错对裂纹的影响.当楔形角参数λ=1/2时, 半无限楔形裂纹退化成半无限尖裂纹,相应的结果 可以作为特殊情况而直接得到.     

Interaction of dislocation pile-up with a low-angle tilt boundary: a discrete dislocation dynamics study

Abstract

The pile-up of dislocations between two low-angle tilt boundaries (LATB) in an fcc crystal was simulated using three-dimensional discrete dislocation dynamics. The LATB was constructed using glissile edge dislocations stacked on each other. The dislocations in the pile-up were chosen such that their reactions with the dislocations in the LATB resulted in glissile junctions. Parallel pairs of dislocations were inserted to a maximum allowable value estimated from theoretical expressions. A resolved shear stress was applied and increased in steps so as to move the dislocations in the pile-up towards the boundaries. The shear stress required to break the lead dislocation from the wall was determined for varying spacings between the two boundaries. The shear stress and boundary spacing followed the Hall–Petch type relation. Dislocation pile-ups without a LATB were also simulated. The spacing of the dislocations in the pile-up with LATB was found to be closer (ie higher dislocation density) than that without LATB. It was shown through analytical expressions that LATB exerts an attractive force on the dislocations in the pile-up thereby creating a denser pile-up.