Comparison of effect of 5 MeV proton and Co-60 gamma irradiation on silicon NPN rf power transistors and N–channel depletion MOSFETs

NPN transistors and N-channel depletion metal oxide semiconductor field effect transistors (MOSFETs) were irradiated with 5?MeV protons and ⁶⁰Co gamma radiation in the dose ranging from 1?Mrad(Si) to 100?Mrad(Si). The different electrical characteristics of the NPN transistor such as Gummel characteristics, excess base current (ΔI_B), dc current gain (h_FE), transconductance (g_m), displacement damage factor (K) and output characteristics were studied as a function of total dose. The different electrical characteristics of N-channel MOSFETs such as threshold voltage (V_th), density of interface trapped charges (ΔN_it), density of oxide trapped charges (ΔN_ot), transconductance (g_m), mobility (µ) and drain saturation current (I_DSat) were studied systematically before and after irradiation in the same dose ranges. A considerable increase in the base current (I_B) and decrease in the h_FE, g_m and collector saturation current (I_CSat) were observed after irradiation in the case of the NPN transistor. In the N-channel MOSFETs, the ΔN_it and ΔN_ot were found to increase and V_th, g_m, µ and I_DSat were found to decrease with increase in the radiation dose. The 5?MeV proton irradiation results of both the NPN transistor and N-channel MOSFETs were compared with ⁶⁰Co gamma-irradiated devices in the same dose ranges. It was observed that the degradation in 5?MeV proton-irradiated devices is more when compared with the ⁶⁰Co gamma-irradiated devices at higher total doses.     

Determination of the he pressure in bubbles formed during α-implantation of Ni

Abstract

At T?90°C, Ni single crystals were uniformly implanted to a depth of 10 μm with multi-energy He ions (E≤5.2 MeV), to concentrations from 0.06 to 1.1 at.%. From a small-angle X-ray scattering study, helium was found to be trapped in small bubbles with radii of 5.6 to 12 Å. The average distance between bubbles of about 80 Å was found to be independent of the implantation dose. At the higher concentration, CH_c 1.1%, the bubbles were found to be strongly over-pressurized, i.e. the He pressure in the larger bubbles was determined to be as high as 300 kbar with a He atom/vacancy ratio of 2.     

Effect of helium ion irradiation on the structure and electrical resistivity of nanocrystalline Cr–N and V–N coatings

The structural stability and electrical resistivity of nanocrystalline Cr–N and V–N coatings prepared by ion beam-assisted deposition were studied. The results showed that under helium ion irradiation up to doses of 1.0^.10¹⁷ ion/cm² the fine-crystalline objects successively increase their resistance without apparent structural changes. The subsequent dose increase leads to gas-vacancy void formation and chromium nitride structure destruction. The presence of the initial closed porosity in vanadium nitride favors its structural stability at investigated maximum damage doses.     

Kinetics of accumulation of vacancy complexes in dislocated silicon under 60Co γ-ray irradiation

Abstract

Radiation defect accumulation in ⁶⁰Co γ-ray-irradiated n-type Si single crystals (ρ=150ωcm) with various densities of dislocations (N_D = 1 × 10⁴ to 1 × 10⁷ cm ^?2) introduced at plastic deformation was studied. The temperature dependences of the Hall coefficient were measured. The probabilities of interaction of vacancies with oxygen, phosphorus atoms, and dislocation line elements were determined. It has been established that with the increase of N_D they can increase at the expense of complication of dislocation structure, decrease during formation of impurity atmosphere near dislocations and compensation of deformation fields, and they do not change if complex formation of vacancies with impurities occurs far from dislocations. Kinetics of A- and E-centre accumulation in the crystals containing dislocations with different impurity atmosphere was described.     

Comparison of 1 MeV electron,Co-60 gamma and 1 MeV proton irradiation effects on silicon NPN transistors

The total dose effects of 1?MeV electrons on the dc electrical characteristics of silicon NPN transistors are investigated in the dose range from 100?krad to 100?Mrad. The different electrical characteristics such as Gummel characteristics, excess base current (ΔI_B), dc current gain (h_FE), transconductance (g_m), displacement damage factor (K) and output characteristics were studied in situ as a function of total dose. A considerable increase in base current (I_B) and a decrease in h_FE, g_m and I_CSat was observed after 1?MeV electron irradiation. The collector–base (C–B) junction capacitance of transistors was measured to estimate the change in the effective carrier concentration. After 1?MeV electron irradiation, a considerable degradation in capacitance was observed. The plot of (1/C²) versus voltage shows that the effective carrier concentration and built-in voltage (V_bi) increase marginally upon 1?MeV electron irradiation. The results of 1?MeV electron irradiation were compared with 1?MeV proton and Co-60 gamma irradiation results in the same dose range. The degradation for 1?MeV electron and Co-60 gamma-irradiated transistors was significantly less when compared to 1?MeV proton-irradiated transistor. The 1?MeV proton, 1?MeV electron and Co-60 gamma-irradiated transistors were subjected to isochronal annealing to analyze the recovery of the electrical parameters.     

Analysis of proton elastic scattering from16O and40Ca at 800 MeV within the α-particle model

Elastic scattering of proton from¹⁶O and⁴⁰Ca are analyzed within the -particle model. The results are in good agreement with the experimental data. The role displayed by the phase factor ofp- scattering amplitude is investigated.     

Ionoluminescence and formation of color centers in α-Al2O3 single crystals under proton irradiation

This paper describes results of experimental studies on radiation defects in nominally pure single crystals of corundum in two initial states: α-Al₂O₃ with an unperturbed lattice and α-Al₂O₃:C with a high concentration of anion vacancies. Defects were identified from optical absorption spectra, ionoluminescence, pulsed cathodoluminescence and photoluminescence spectra. It is shown that mostly color centers of the F- and F⁺-types are formed in the α-Al₂O₃ lattice under irradiation with 5,7 MeV protons.     

Hadro- and photo-production of η′ in quasi-free proton and neutron processes

The η′ photoproduction process on quasi-free proton and neutron and the reaction NN→ η′NN are investigated within a relativistic effective Lagrangian approach to hadronic interactions. Resonances with spins 1/2 and 3/2 are considered together with the nucleonic and t-channel meson-exchange current contributions. In photoproduction processes, the S11 resonance is found to be responsible for the sharp rise of the cross sections near threshold. In pp → η′pp, it is found that the S11 resonance dominates the total cross section over the entire energy region considered. The spin observables, in particular the beam and target asymmetries, are shown to be very sensitive to the reaction mechanism and will help impose more stringent constraints on the model parameters.     

Investigation of phase transition of γ-alumina to α-alumina via mechanical milling method

In this research, the results obtained from studying the phase transition of γ-alumina (γ-Al₂O₃) to α-alumina (α-Al₂O₃) during intense mechanical activation in high-energy ball milling are presented. The powder samples were characterized by scanning electron microscope (SEM), X-ray diffraction (XRD), thermogravimetric and Differential thermal analyses (TG-DTA). With respect to the results achieved from above analyses, the transition of γ → α-alumina through δ- and θ-phases, can be initiated. Also, it was found that the pure γ-alumina phase showed a great stability during high-energy ball milling and there was no transformation to any other phase after a long milling time (30 h). On the other hand, γ-alumina containing a small amount of the α-alumina seed, showed a gradual phase transition from γ-alumina to α-alumina in milling. The phase transition mechanism during milling is nucleation and growth, which is promoted by the α-alumina seed.     

Phase relations and probabilities of α-particle formation in the surface region of even-even nuclei

The concept of the probability of formation W_c of particles in the surface region of nuclei is used in a classification of transitions of even-even deformed nuclei (226 A 254) to the first four levels of the ground-state rotational band of the daughter nuclei with allowance for coupling of the decay channels. The calculated values of W_c are compared with the analogous quantities in spherical nuclei and are used as a basis for the classification of transitions in deformed nuclei. It is concluded that the phase factors of the wave functions with L=0 and 2 are positive, while those with L=4 are positive for the investigated isotopes of Th, U, and Pu and negative for Cm, Cf, and Fm. The fractions of transitions with L=4 are predicted for a number of isotopes.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 49–54, July, 1980.     

Real-time stress detection of monocrystalline silicon by laser irradiation using Mach–Zehnder interferometry

The effect of changes in laser-induced stress upon irradiation of monocrystalline silicon was studied in detail using Mach–Zehnder interferometer, high speed camera and computer processing system, real-time detection of stress distribution and stress evolvement under different laser fluences and pulse widths. After irradiation, the changes of interference fringes were used to calculate the stress value. The results show that the stresses increased with the increase of the laser fluence. The formation of stress could be explained using thermoelastic theory. The cleavage plane’s dislocation appears in the following sequence: (1 1 1) plane appears and then the dislocation slip of (1 1 0) cleavage plane appears. In addition, it is found that cleavage plane of (1 1 1) mainly exist in the spot and cleavage plane of (1 1 0) mainly exists in the vicinity of spot radius. Stress areas mainly exist in the thin layer on the surface of silicon. Furthermore, stress field was analysed by the finite-element method to get a better understanding of the formation and distribution of stress. Under the same experimental conditions, the numerical results are in agreement with the experimental values.     

Controlled synthesis and magnetic properties of nickel phosphide and bimetallic iron–nickel phosphide nanorods

Nickel phosphide (Ni₂P) and bimetallic iron–nickel phosphides [(Fe _x Ni _y )₂P] nanorods were fabricated by a seeded growth strategy. This strategy utilized pre-synthesized Fe₃O₄ nanoparticles as seeds and the thermal decomposition of metal precursors by multiple injections in a solution containing trioctylphosphine and didodecyldimethylammonium bromide (DDAB). The nanorods were characterized by transmission electron microscopy, X-ray diffraction, and magnetic measurements were carried out using superconducting quantum interference device (SQUID). The rod length was tunable, ranging from 10 to 110 nm depending on the number of injections, whereas the diameter of the rods was nearly 6 nm. It was found that the rod size increased with the number of injections under the constant total injection concentration and reaction time. In addition, the effect of the DDAB quantity used as a co-surfactant was studied, which showed that an optimum quantity was required to achieve uniform nanorods. Magnetic characterizations were performed over the two kinds of nanorods to identify their respective magnetic phases. The results demonstrated that the Ni₂P nanorods were defined as a Curie–Weiss paramagnet, whereas the (Fe _x Ni _y )₂P nanorods exhibited superparamagnetic characteristics.     

Chemical composition and structural phase changes of Pd sample and properties of novel synthesized structure at dense deuterium gas under irradiation by γ-quanta

Studies have been carried out into the element composition of Pd and brass with associated materials and synthesized novel structure, placed in dense deuterium gas in a deuterium high-pressure chamber (DHPC) under the pressure 3 kbar and irradiated with ??-quanta of energy up to 8.8 MeV. Using the methods of scanning electron microscopy, microelement chemical analysis and X-ray diffraction, it was determined that in the absence in the chamber volume and walls of all HPC-forming materials the synthesized structure is largely composed of alumosilicates and Al and Si oxides with high content of Ti compounds as rutile TiO₂. Pd_1.5D₂. Considerable anomalies in the chemical composition were found both in the surface and at large depth in a Pd specimen. The entire Pd surface turned into a structure comprised of Pd clusters, Cu and Zn compounds, with a notable content of Mg, Al, S, Si, K, Ca, Ti and Fe compounds. Results of evaluative calculations, including computation of the Q-value, are presented for nuclear reactions produced in a saturated with deuterium Pd specimen and dense deuterium gas under the action of ??-quanta, neutrons and protons of energies up to E _n + E _p ?? E _?? ? E _D MeV generated by deuteron fission. The obtained results can be explained by ??collective effects?? as chain reactions caused by deuteron fission induced by protons (E _p > 3.39 MeV) and neutrons (E _n > 2.25 MeV), as well as by thermonuclear synthesis of deuterium atoms elastically scattered by protons of energies up to E _P < E _?? ? E _D MeV.     

In-situ monitoring and control of hydrogenated amorphous silicon–germanium band-gap profiling during plasma deposition process

In-situ germanium content monitoring and its characteristics in SiH₄/GeH₄/H₂ plasmas was studied during hydrogenated amorphous silicon–germanium (a-SiGe:H) film depositions. Since an appropriate band-gap profiling in a-SiGe:H deposition is very important to achieve high efficiency solar cell, the accurate monitoring and control of Ge contents are required. In this work, we found the spectral intensity ratio of silicon atom (288.2 nm) and germanium atom (303.9 nm) emission has strong relation with Ge content in plasmas. In typical, band-gap energy of films was decreased with the increasing of gas flow ratio GeH₄/SiH₄. However, at different total flow rate of GeH₄, the band-gap was different for same gas flow ratio cases because the Ge content in plasmas was changed due to the changes of electron temperature by hydrogen dilution. On the other hand, the emission intensity ratio Ge/Si detected the band-gap variation. Using this method, therefore, we measured and control Ge/Si to make a U-shape band-gap profile which was proved by an ellipsometer and Auger electron spectroscopy depth profile analysis.     

Precipitation and fracture behaviour of Fe–Mn–Ni–Al alloys

The effects of Al addition on the precipitation and fracture behaviour of Fe–Mn–Ni alloys were investigated. With the increasing of Al concentration, the matrix and grain boundary precipitates changed from L1₀ θ-MnNi to B2 Ni₂MnAl phase, which is coherent and in cube-to-cube orientation relationship with the α′-matrix. Due to the suppression of the θ-MnNi precipitates at prior austenite grain boundaries (PAGBs), the fracture mode changed from intergranular to transgranular cleavage fracture. Further addition of Al resulted in the discontinuous growth of Ni₂MnAl precipitates in the alloy containing 4.2?wt.% Al and fracture occurred by void growth and coalescence, i.e. by ductile dimple rupture. The transition of the fracture behaviour of the Fe–Mn–Ni–Al alloys is discussed in relation to the conversion of the precipitates and their discontinuous precipitation behaviour at PAGBs.     

Ablation efficiency of α-Al2O3 in liquid phase and ambient air by nanosecond laser irradiation

Ablation efficiency and influences of laser parameters on a material removal rate by a nanosecond laser irradiation of α-Al₂O₃ are studied in gas and liquid phases. The laser ablation in the air yields maximum material removal rate of 12 ng/pulse using a 4.6-mJ pulse energy at 4-kHz repetition rate, compared to 88 ng/pulse in the water flow. Using a specific interpulse distance and a laser repetition rate further increase material removal rate by factor of 3 and 65, respectively, owing to an optimized lattice temperature and laser pulse interactions with the generated cavitation bubble. For the ablation in the air, these parameters do not significantly affect the ablation efficiency.