Strain relaxation in epitaxial GaAs/Si (0 0 1) nanostructures

Abstract

Crystal defects, present in ~100 nm GaAs nanocrystals grown by metal organic vapour phase epitaxy on top of (0 0 1)-oriented Si nanotips (with a tip opening 50–90 nm), have been studied by means of high-resolution aberration-corrected high-angle annular dark-field scanning transmission electron microscopy. The role of 60° perfect, 30° and 90° Shockley partial misfit dislocations (MDs) in the plastic strain relaxation of GaAs on Si is discussed. Formation conditions of stair-rod dislocations and coherent twin boundaries in the GaAs nanocrystals are explained. Also, although stacking faults are commonly observed, we show here that synthesis of GaAs nanocrystals with a minimum number of these defects is possible. On the other hand, from the number of MDs, we have to conclude that the GaAs nanoparticles are fully relaxed plastically, such that for the present tip sizes no substrate compliance can be observed.     

On low temperature glide of dissociated 〈1 1 0〉 dislocations in strontium titanate

An elastic interaction model is presented to quantify low temperature plasticity of SrTiO₃ via glide of dissociated 〈1 1 0〉{1 1 0} screw dislocations. Because 〈1 1 0〉 dislocations are dissociated, their glide, controlled by the kink-pair mechanism at T < 1050 K, involves the formation of kink-pairs on partial dislocations, either simultaneously or sequentially. Our model yields results in good quantitative agreement with the observed non-monotonic mechanical behaviour of SrTiO₃. This agreement allows to explain the experimental results in terms of a (progressive) change in 〈1 1 0〉{1 1 0} glide mechanism, from simultaneous nucleation of two kink-pairs along both partials at low stress, towards nucleation of single kink-pairs on individual partials if resolved shear stress exceeds a critical value of 95 MPa. High resolved shear stress allows thus for the activation of extra nucleation mechanisms on dissociated dislocations impossible to occur under the sole action of thermal activation. We suggest that stress condition in conjunction with core dissociation is key to the origin of non-monotonic plastic behaviour of SrTiO₃ at low temperatures.     

Long-range chemical interactions in solid-state reactions: effect of an inert Ag interlayer on the formation of L10-FePd in epitaxial Pd(0 0 1)/Ag(0 0 1)/Fe(0 0 1) and Fe(0 0 1)/Ag(0 0 1)/Pd(0 0 1) trilayers

The effect of 0, 0.5, and 1?μm-thick Ag interlayers on the chemical interaction between Pd and Fe in epitaxial Pd(0?0?1)/Ag(0?0?1)/Fe(0?0?1)/MgO(0?0?1) and Fe(0?0?1)/Ag(0?0?1)/Pd(0?0?1)/MgO(0?0?1) trilayers has been studied using X-ray diffraction, ⁵⁷Fe Mössbauer spectroscopy, X-ray photoelectron spectroscopy, and magnetic structural measurements. No mixing of Pd and Fe occurs via the chemically inert Ag layer at annealing temperatures up to 400?°C. As the annealing temperature is increased above 400?°C, a solid-state synthesis of an ordered L1₀-FePd phase begins in the Pd(0?0?1)/Ag(0?0?1)/Fe(0?0?1) and Fe(0?0?1)/Ag(0?0?1)/Pd(0?0?1) film trilayers regardless of the thickness of the buffer Ag layer. In all samples, annealing above 500?°C leads to the formation of a disordered Fe_xPd_1?x(0?0?1) phase; however, in samples lacking the Ag layer, the synthesis of Fe_xPd_1?x is preceded by the formation of an ordered L1₂-FePd₃ phase. An analysis of the X-ray photoelectron spectroscopy results shows that Pd is the dominant moving species in the reaction between Pd and Fe. According to the preliminary results, the 2.2?μm-thick Ag film does not prevent the synthesis of the L1₀-FePd phase and only slightly increases the phase’s initiation temperature. Data showing the ultra-fast transport of Pd atoms via thick inert Ag layers are interpreted as direct evidence of the long-range character of the chemical interaction between Pd and Fe. Thus, in the reaction state, Pd and Fe interact chemically even though the distance between them is about 10⁴ times greater than an ordinary chemical bond length.     

Size dependent deformation behaviour and dislocation mechanisms in 〈1 0 0〉 Cu nanowires

Abstract

Molecular dynamics simulations have been performed to understand the size-dependent tensile deformation behaviour of 〈1 0 0〉 Cu nanowires at 10 K. The influence of nanowire size has been examined by varying square cross-section width (d) from 0.723 to 43.38 nm using constant length of 21.69 nm. The results indicated that the yielding in all the nanowires occurs through nucleation of partial dislocations. Following yielding, the plastic deformation in small size nanowires occurs mainly by slip of partial dislocations at all strains, while in large size nanowires, slip of extended dislocations has been observed at high strains in addition to slip of partial dislocations. Further, the variations in dislocation density indicated that the nanowires with d > 3.615 nm exhibit dislocation exhaustion at small strains followed by dislocation starvation at high strains. On the other hand, small size nanowires with d < 3.615 nm displayed mainly dislocation starvation at all strains. The average length of dislocations has been found to be same and nearly constant in all the nanowires. Both the Young’s modulus and yield strength exhibited a rapid decrease at small size nanowires followed by gradual decrease to saturation at larger size. The observed linear increase in ductility with size has been correlated with the pre- and post-necking deformation. Finally, dislocation–dislocation interactions leading to the formation of various dislocation locks, the dislocation–stacking fault interactions resulting in the annihilation of stacking faults and the size dependence of dislocation–surface interactions have been discussed.     

Magnetic Faraday modulation spectroscopy of the 1–0 band of 14NO and 15NO

Magnetic rotation spectroscopy signals of the nitric oxide (NO) fundamental band near 5 μm have been observed and compared with calculated signals. This spectroscopic approach exploits magnetic field modulation in the Faraday configuration for very sensitive detection of NO. Line shapes and strengths of the Faraday signals depend on molecular parameters, like J and Ω quantum numbers of the transitions involved, and on experimental parameters, like pressure of the gas sample and applied external magnetic field strength. In this study we implemented a software model which provides a simulation of the complete v=1–0 Faraday spectrum of NO. The algorithm considers the magnetic field modulation, the collisional and Doppler broadening of the line shapes, and the line intensities of ¹⁴NO and ¹⁵NO fundamental band lines. Optimum values for pressure and magnetic field modulation for maximum sensitivity are given. Suitable spectral windows for simultaneous detection of ¹⁴NO and ¹⁵NO are discussed. Experimental data were obtained in the wavenumber region from 1840 to 1900 cm^?1 by means of a CO sideband laser and a quantum cascade laser. Comparison between calculated and observed signals shows excellent agreement.     

First-principles study of thiophene on β-SiC (0 0 1)-(2×1) surface

In this work, we performed density functional calculations to examine the molecular adsorption states of thiophene on β-SiC(0 0 1)-2×1 surface. A number of possible adsorption geometries are considered into two groups as the polymeric thiophene chain and the individual molecules covalently bonded onto the surface. The results show that the polymeric chain on the surface is the less stable adsorption case and individual arch like adsorption case structure is more stable than others. In all adsorption cases, the adsorbed SiC surfaces are characterized as different semiconductors.     

Adsorption and decomposition of γ-butyrolactone on Pd(1 1 1) and Pt(1 1 1)

The adsorption and thermal chemistry of γ-butyrolactone (GBL) on the (1 1 1) surface of Pd and Pt has been investigated using a combination of high resolution electron energy loss spectroscopy (HREELS) and temperature programmed desorption (TPD). HREELS results indicate that GBL adsorbs at 160 K on both surfaces through its oxygenate functionality. On Pd(1 1 1), adsorbed GBL undergoes ring-opening and decarbonylation by 273 K to produce adsorbed CO and surface hydrocarbon species. On Pt(1 1 1), very little dissociation is observed using HREELS, with almost all of the GBL simply desorbing. TPD results are consistent with decarbonylation and subsequent dehydrogenation reactions on Pd(1 1 1), although small amounts of CO₂ are also detected. TPD results from Pt(1 1 1) indicate that a small proportion of adsorbed GBL (perhaps on defect sites) does undergo ring-opening to produce CO, CO₂, and H₂. These results suggest that the primary dissociation pathway for GBL on Pd(1 1 1) is through O-C scission at the carbonyl position. Through comparisons with previously published studies of cyclic oxygenates, these results also demonstrate how ring strain and functionality affect the ring-opening rate and mechanism.     

Growth mode of Pt1−xNix films biased dc-sputter-deposited on MgO(0 0 1)

A study is made by TEM, XRD and by measuring electrical/magnetic properties, of growth mode and properties of Pt_1−xNi_x alloy films deposited on MgO(0 0 1) at 250°C by dc-sputtering at 2.5–2.7 kV in Ar. A bias voltage V_s≤−160 V was applied to the substrate during deposition. It was confirmed that the Pt film was polycrystalline with the texture of Pt(1 1 1)/MgO(0 0 1) while the films of Pt_0.14Ni_0.86 and Pt_0.19Ni_0.81 were epitaxially grown with Pt–Ni(0 0 1)[1 0 0]/MgO(0 0 1)[1 0 0] similarly to the case of Ni/MgO(0 0 1). Thus the growth mode transformation between Pt–Ni(1 1 1)/MgO(0 0 1) and Pt–Ni(0 0 1)/MgO(0 0 1) may be induced at x less than 0.81 for Pt_1−xNi_x alloy films. The temperature coefficient of resistance TCR from 100 to 300 K of Pt_0.14Ni_0.86 films was estimated to be 0.0044–0.0053 K⁻¹ and saturation magnetization at 300 K to be 1.7–3.2 kG, respectively, while TCR of Pt films was estimated to be 0.0035–0.0048 K⁻¹.     

Quantized (1, 0) ⊕ (0, 1) Fields

We find a mapping between antisymmetric tensormatter fields and the Weinberg 2(2j + 1)-componentbispinor fields. Equations which describethe j = 1 antisymmetric tensor field coincide with the Hammer-Tucker equations entirely and withthe Weinberg ones within a subsidiary condition, theKlein-Gordon equation. A new Lagrangian for the Weinbergtheory is proposed which is scalar and Hermitian. It is built on the basis of the concept ofWeinberg doubles. The origin of acontradiction between the classical theory, the Weinbergtheorem B – A = for quantum relativisticfields, and the claimed longitudity of the antisymmetrictensor field [transformed on the (1, 0) (0, 1)Lorentz group representation] after quantization isclarified. Analogs of the j = 1/2 Feynman–Dysonpropagator are presented in the framework of the j = 1 Weinberg theory.It is then shown that under a definite choice of fieldfunctions and initial and boundary conditions themassless j = 1 Weinberg–Tucker–Hammerequations contain all the information that the Maxwell equationsfor the electromagnetic field have. Thus, the formerappear to be of use in describing some physicalprocesses.     

Spectroscopy of laser-produced cerium plasma for remote isotope analysis of nuclear fuel

A cerium oxide sample was ablated by 2nd harmonic radiation of Nd:YAG laser at a power density of 0.1 GW/cm². Time evolution of the ablation plume was investigated by laser absorption time-of-flight (TOF) measurement. It was found that the ablated ionic plume in vacuum consisted of two components having different velocities whereas the ablated neutral atoms had mainly a single component. The flow velocity perpendicular to the sample surface in vacuum was determined to be 3.5 km/s for neutral atoms, and 4.7 km/s and 9.3 km/s for singly charged ions. From the detailed plume evolution in ambient atmosphere with several pressures we obtained some experimental conditions suitable for isotope analysis of atomic cerium.     

Improvement of ammonia sensing properties of poly(pyrrole)–poly (n-methylpyrrole) composite by ion irradiation

In the present investigation we have electrochemically synthesized polypyrrole–poly (n-methylpyrrole) composite film with optimized process parameters (viz. concentration of monomers and dopant, applied current density, deposition time, pH of electrolyte etc.) on platinum substrate. The composite film of polypyrrole–poly (n-methylpyrrole) was subjected to electrical, spectral and morphological characterizations and its sensing response to various concentration of ammonia was also studied. Later, the synthesized composite films were irradiated under high vacuum (∼5×10⁻⁶ Torr) at room temperature with 85 MeV O⁷⁺ ion beam at various fluences from 1×10⁵ to 1×10⁷ ions/cm². We have observed remarkable improvements in electrical and morphological properties suitable for gas-sensing applications. The irradiated composite film was evaluated for the sensing of various concentrations of ammonia and excellent improvement in terms of sensitivity, lower detection limit and response time was observed.     

Growth process and structure of Fe/Si(1 1 1) ultrathin film: Transition from single-domain Fe(1 1 1)/Si(1 1 1) to β-FeSi2

The growth processes and structures of Fe/Si(1 1 1) ultrathin films grown by solid-phase reactive epitaxy were investigated by coaxial impact-collision ion scattering spectroscopy (CAICISS). It has been revealed that the Fe(1 1 1) thin films with a bcc-type structure were epitaxially grown on a Si(1 1 1) crystal, even at room temperature, and formed a single-domain structure: Fe(1 1 1)∥Si(1 1 1). After annealing at above 600 °C, the Fe(1 1 1) films were transformed into β-FeSi₂ via the collapse of the bcc-type structure to an amorphous or polycrystalline structure. On the basis of the thickness dependences of the growth processes, this phenomenon was discussed in terms of the diffusion of Si into Fe thin films.     

Adsorption kinetics of the Cs–O activation layer on GaAs(1 0 0)

In this work, we study the adsorption of (molecular) oxygen on Cs-covered GaAs(1 0 0) surfaces at RT. The study took place in a multi-method UHV system using the techniques such as low energy electron diffraction (LEED), Auger electron spectroscopy (AES), work function measurements (WF), thermal desorption spectroscopy (TDS), secondary ion mass spectroscopy (SIMS) and electron stimulated desorption (ESD) spectroscopy in correlation with the photocurrent measurements. It is shown that the oxygen burrows under the Cs overlayer and interacts at low exposures with the GaAs substrate, whereas at higher exposures oxygen interacts also with Cs leading to Cs oxides. The maximum photocurrent appears after the WF minimum and before the oxidation of Cs. Our results support the dipolar model for the explanation of the negative electron affinity effect.     

Electronic structure of epitaxial thin films of bay-substituted perylene bisimide dyes

We have investigated epitaxial thin films of three air-stable organic n-type semiconducting perylene tetracarboxylic acid bisimides (PBIs) with fluoroalkyl groups in the imide position with a combination of X-ray, UV, and inverse photoelectron spectroscopy. We explore the applicability of film preparation by organic molecular beam deposition (OMBD) under ultra-high vacuum conditions to these compounds. By means of fluorine and chlorine substituents in the bay area a systematic torsion of the π-conjugated core of these three PBIs is achieved. Accordingly, these molecules offer a model system to analyze the interplay between the molecular conformation, the film structure, and the electronic structure. Our results show that the PBIs can be deposited intact and contamination free by OMBD and relatively smooth films with layer-to-layer growth can be established. Moreover, the valence spectra reveal the effect of the electro-negative bay substituents as well as of the twisting of the perylene core, which leads to energy shifts of the occupied and unoccupied frontier orbitals.     

Optical transitions on (1 1 0) surfaces of III–V compounds

The modulation reflectivity technique was used to detect the optical transition on clean cleaved (1 1 0) surfaces of III–V compounds. In the spectra obtained the optical transitions involving surface eigenstates were identified.     

Current–voltage temperature characteristics of Au/n-Ge (1 0 0) Schottky diodes

The variation in electrical characteristics of Au/n-Ge (1 0 0) Schottky contacts have been systematically investigated as a function of temperature using current–voltage (I−V) measurements in the temperature range 140–300 K. The I–V characteristics of the diodes indicate very strong temperature dependence. While the ideality factor n decreases, the zero-bias Schottky barrier height (SBH) (Φ_B) increases with the increasing temperature. The I–V characteristics are analyzed using the thermionic emission (TE) model and the assumption of a Gaussian distribution of the barrier heights due to barrier inhomogeneities at the metal–semiconductor interface. The zero-bias barrier height Φ_B vs. 1/2 kT plot has been used to show the evidence of a Gaussian distribution of barrier heights and values of Φ_B=0.615 eV and standard deviation σ_s0=0.0858 eV for the mean barrier height and zero-bias standard deviation have been obtained from this plot, respectively. The Richardson constant and the mean barrier height from the modified Richardson plot were obtained as 1.37 A cm⁻² K⁻² and 0.639 eV, respectively. This Richardson constant is much smaller than the reported of 50 A cm⁻² K⁻². This may be due to greater inhomogeneities at the interface.     

CrO2块体及其(0 0 1)和(1 0 0)表面的电子结构和磁性质

基于密度泛函理论的第一性原理计算,我们研究了CrO2块体以及其(1 0 0)和(0 0 1)表面的磁性和电子结构。CrO2(1 0 0)表面中表面层Cr原子向内收缩,而(0 0 1)表面中的表面层Cr原子却向外伸展;越往内层,原子驰豫幅度越小。由于表面效应。表面层原子的磁矩有了大幅的提升,其中(1 0 0)表面中表面层Cr原子的磁矩最高,为3.03μB。电子结构计算表明,CrO2 (1 0 0)和(0 0 1)表面均保持了块体中良好的半金属性,并且半金属带隙在(1 0 0)表面中受到了进一步的拓宽,因此具有更稳定的半金属性     

Study of the decayf 1(1285)→ρ0(770)γ

The decayf ₁(1285)→ρ⁰(770)γ was studied at VES spectrometer of IHEP. Clear signal off ₁(1285) is seen in the effective mass spectrum of the π⁺π^?γ system in the reaction π^?γN→π⁺π^?π^?γN at the momentum $P_{\pi ^ - } = 37 GeV/c$ . The branching fraction of decayf ₁(1285)→ρ⁰(770)γ has been found to be $$BR(f_1 (1285) \to \rho ^0 (770)\gamma ) = (2.8 \pm 0.7(stat) \pm 0.6(syst)) \cdot 10^{ - 2} .$$ The ratio of the helicity amplitudes for ρ⁰ meson in its rest frame was determined by the analysis of angular distributions: $$\rho _{00} /\rho _{11} = 3.9 \pm 0.9(stat) \pm 1.0(syst).$$