Special misorientations in localized deformation regions in Fe-3%Si alloy single crystals

Extended regions located at an angle of 20° to the rolling plane are observed inside deformation bands in a (110)[001] Fe-3%Si alloy single crystal at a high strain (～60%). These regions were interpreted earlier as shear bands. The lattice orientation in these bands is close to (110)[001], and their habit plane is parallel to the {112} planes of the deformed {111}〈112〉 matrix. The misorientations between the bands and the matrix group around special misorientations Σ9, Σ19a, Σ27a, and Σ33a, which are characterized by close angles of rotation about axis 〈110〉. During primary recrystallization, the (110)[001] grains growing from the bands retain segments of the corresponding special boundaries with the deformed matrix.     

Lattice reorientation in the shear bands of {112}〈131〉 crystallites in an Fe-3%Si alloy

Subregions (0.1 μm) with the {110}〈113〉 orientation form in shear bands in grains with the {112}〈131〉 orientation in a deformed (? ≈ 50%) polycrystalline Fe-3%Si alloy sample. The relationship between the matrix and the subregions in the shear bands is described by a special misorientation close to Σ5. It is assumed that the subregions that have a {110}〈hhl〉 orientation and special misorientation Σ5 with the surrounding matrix and form in the shear bands of crystallites with orientations other than {111}〈112〉 can serve as anomalous growth nuclei during heat treatment because of a high density of special Σ5 boundaries.     

Nucleation and orientation of graphite{0001} layers on Pt{110}

Investigations by field electron microscopy revealed that graphite{0;0001} layers grow preferentially on Pt{110}. Layer nucleation and initial growth occurs in the vicinal area of {110} along the 〈112〉 and the 〈100〉 zones and not on the unstepped {110} plane itself. The growth rate in the vicinal area is determined by the epitaxial misfit parallel to the step edges. An alignment of the graphite layer with the underlying {110} is observed. It corresponds to graphite〈101̄0〉 ∥ Pt〈100〉, which coincides with the calculated orientation of smallest epitaxial misfit. The change of relative emission from {110} upon adsorption of graphite is discussed.     

Deformation band evolution in [110] Al single crystals strained in tension

Several types of deformation bands form during uniaxial extension of Al single crystals for which the tensile axis is initially parallel to [110]. The objectives of the present work are to analyse crystal orientation evolution in the deformation bands and adjoining regions, and to integrate the experimental observations with a crystal mechanics model. The most prominent deformation bands contain secondary slip traces and exhibit crystal rotations consistent with unpredicted slip on a secondary slip system. These special bands of secondary slip (SBSS) become more closely aligned with the tensile axis as extension increases. The evolution of SBSS inclination with extension indicates that SBSS form initially as kink bands and that SBSS boundaries are immobile. SBSS grow during straining by expansion of the volume of material in which secondary slip operates. Deformed matrix (DM) bands are zones between SBSS; primary slip predominates in DM bands. Small intra-DM bands result from spatial variation of the shear amplitudes for the two primary slip systems. The evolution of intra-DM band inclination with extension indicates that intra-DM bands form initially as kink bands and that the band boundaries are mobile, at least to some extent.     

Influence of low-temperature annealing on the microstructure of cryogenically deformed copper

The microstructure formation during annealing of cryogenically deformed copper was studied. It was shown that the primary recrystallization was completed already after a one-hour annealing at 150°C. It was found out that grains with the crystallographic orientation close to {112}〈111〉, {4; 4; 11}〈11; 11; 8〉, {110}〈122〉, and {130}〈132〉 had an advantage in the growth, which, apparently, was associated with a relatively low energy stored during the deformation.     

Dislocations in Fe-3% Si alloy single crystals deformed at a higher rate

The method of etching dislocations is used to study the distribution of dislocations and twins in Fe-3% Si alloy single crystals prepared from the melt after plastic deformation with higher speed. The crystals are deformed by twinning in the 〈111〉 directions along the {112} planes and by slip in the 〈111〉 directions along the {110} planes. The results prove that the dislocations causing plastic deformation move in the {110} planes during both fast and slow deformation. The difference in the slip surfaces during fast and slow deformation is explained by the different number of cross slips per unit dislocation path.     

Nanoscratch behavior of multi-layered films using molecular dynamics

Molecular dynamics simulations are performed to study the plastic deformation, stress and chip formation of scratched multi-layered films. The results showed that stick–slip and work-hardening behaviors were observed during the scratching process. There was a pile-up of amorphous disordered debris atoms and shear rupture ahead of the probe and a clear side-flow on the lateral sides of the probe when the probe moved forward. Both the plastic energy and the adhesion increased with an increase in the scratching depth. The glide band of the interface was on the {111}〈110〉 slip system with a maximum width of the glide band of about 1 nm. The strain energy stored in the deformed structure caused a higher stress region in the material in front of the tool edge, with a maximum stress of about 10 GPa. In addition, the mechanical response and thermal softness phenomenon are discussed. PACS 02.70.Ns; 46.55.+d; 47.11.Mn; 91.55.Ax; 62.40.+i     

On the adsorption of oxygen on the Mo{110} surface and its vicinals

The adsorption of oxygen on a Mo{110} surface and four vicinal planes with steps parallel to 〈100〉, 〈110〉 and 〈111〉 directions, is studied by Auger electron spectroscopy (AES) and low energy electron diffraction (LEED). The work has the goal to elucidate whether O adsorption on Mo{110} is really as different from O adsorption on W{110} as reported, and what is the cause of the apparent discrepancies between the various reported sticking coefficients on stepped surfaces.     

Etch pits in AgCl crystals

Single crystal sheets have been prepared by the capillarity method. The dislocations can be revealed with a sodium thiosulphate solution at surface orientations from two regions in the basic triangle. These are: region A around 001 pole up to ≈25°, and region B around 111 pole up to ≈pa 10°. In the remaining region C of the basic triangle the dislocations do not etch. In region A the etch pits have the shape of pyramids. In region B they are triangular pyramidal in shape. Evidence is given that the edge and screw components of annealed and fresh dislocations are revealed by etching. At surface orientations near either the {00l} or {111} planes the slip can be activated in such zones 〈110〉 that are nearly parallel to the surface of the sheets. The slip bands are then straight and predominantly of the edge type.     

Texture development during cold rolling of Fe–Cr–Ni alloy-experiments and simulations

Abstract

In the present work, evolution of microstructure and crystallographic texture during cold rolling of two phase Fe–Cr–Ni alloy was investigated. Fe–Cr–Ni alloy (in initially solution annealed condition) was uni-directionally cold rolled in a laboratory rolling mill to different thickness reductions. Scanning electron microscopy was used to observe the changes in microstructure, while X-ray diffraction was used to investigate changes in crystallographic texture of austenite and ferrite (through changes in orientation distribution function). Crystallographic texture was also simulated using different crystal plasticity models (Full constraint Taylor, relaxed constraint Taylor (lath and pancake) and co-deformation Visco Plastic Self Consistent (VPSC)). With the increase in plastic deformation, there were morphological as well as crystallographic changes in the microstructure. Strong α-fibre (RD//〈1?1?0〉) texture was developed in ferrite, while brass ({1?1?0}〈1?1?2〉) and Goss ({1?1?0}〈0?0?1〉) was dominant in austenite after 80% cold rolling. The formation of brass type texture after deformation has been attributed to the formation of shear bands and presence of strong crystallographic texture in the initial solution annealed material. Both Taylor as well as VPSC models could not capture the changes in texture with deformation accurately. For ferrite: γ-fibre (ND//〈1?1?1〉) and for austenite: Cu ({1?1?2}〈1?1?1〉) component was always present in the simulated textures. Possible reason for this could be the pining effect of interface boundaries and non-incorporation of non-crystallographic shear banding in the Taylor and VPSC models.     

Plastic-strain localization in barium fluoride single crystals at elevated temperatures

The strain distribution is studied in BaF₂ crystals subjected to compression tests along [110] and [112] at a constant strain rate in the temperature range T = (0.22–0.77)T _m. At T > 0.5T _m, the plastic strain in deformed samples is found to be strongly localized in narrow bands, where the shear strain reaches several hundred percent. The degree of localization increases with temperature. Localized-shear microbands are shown to be oriented along {001}〈110〉 slip systems. The phenomenon of serrated yielding is detected, and stress jumps (serrations) are established to correlate with the formation of shear zones.     

γ-TiAl金属间化合物面缺陷能的分子动力学研究

运用分子动力学方法，对γ-TiAl金属间化合物的面缺陷能(层错能和孪晶能)进行了研究. 计算得到γ-TiAl不同滑移系(或孪生系)的整体堆垛层错能曲线，结果表明，γ-TiAl较一般fcc晶体结构的金属可动滑移系(孪生系)的数量减少，在外界条件下呈脆性. 研究孪生系(1/6)〈112〉{111}的弛豫的整体堆垛层错(GSF)能和整体孪晶(GTF)能曲线，对不稳定层错能γ_usf、稳定层错能γ_sf和不稳定孪晶能γ_usf值进行分析，可以预知， γ-TiAl的主要变形机理为孪生系(1/6)〈112〉{111}的孪生和普通滑移系(1/6)〈110〉{111}的滑移，以及超滑移系(1/2)〈011〉{111}的滑移. 关键词： γ-TiAl')" href="#">γ-TiAl 堆垛层错能 孪晶能 分子动力学     

Contact angle and surface morphology of KCl crystal-melt interface studied by the “bubble method”

The validity of the “bubble method” is discussed for the measurements of contact angles between a crystal and its own melt and for the observations of interface morphology. Experiments were done on KCl crystals pulled in various directions. Gold decoration technique was employed to observe the surface morphology. The measurement of the contact angle a is valid for the 〈100〉 axis of pulling but lacks accuracy for the other directions. The {100} interface shows two dimensional nucleation, curved growth fronts and no trace of a liquid layer. The {110}, {310}and {111} interfaces show steps and pyramids constituted by {100} facets, completely stripped of the melt, and “structureless” regions resulting from freely frozen liquid surface.     

Finite deformation analysis of slip-induced crystalline rotations during tensile and compressive tests on bcc iron crystals

This work compares slip-induced lattice rotations calculated from double-slip, finite-deformation analytical solutions to electron-back-scattering-diffraction (EBSD) rotation measurements from SEM in situ, room temperature straining of bcc iron crystals. The finite-deformation modelling assumes slip proportionality between the two dominant active systems. Four experimental cases from a recently published work (2015) are examined, two in axial tension and two in axial compression. They correspond to mixed double-slip on {110} and {112} planes, with slip on the latter in both ‘easy’ and ‘hard’ orientations. In the experiments, EBSD rotation measurements were made on three faces of the iron samples and the dominant active systems were identified from slip traces. Here the relative contributions of the two systems for the best match with available rotation data are determined for each case, and the results discussed in relation to initial shear stress and (probable) critical shear-strength ratios. The analyses provide insight into achievable accuracy in crystal-slip quantification, based on slip-trace observations and rotation measurements of a sample’s load and lateral axes, and some assessment of the relative hardening of active slip systems.     

On low temperature glide of dissociated 〈1 1 0〉 dislocations in strontium titanate

An elastic interaction model is presented to quantify low temperature plasticity of SrTiO₃ via glide of dissociated 〈1 1 0〉{1 1 0} screw dislocations. Because 〈1 1 0〉 dislocations are dissociated, their glide, controlled by the kink-pair mechanism at T < 1050 K, involves the formation of kink-pairs on partial dislocations, either simultaneously or sequentially. Our model yields results in good quantitative agreement with the observed non-monotonic mechanical behaviour of SrTiO₃. This agreement allows to explain the experimental results in terms of a (progressive) change in 〈1 1 0〉{1 1 0} glide mechanism, from simultaneous nucleation of two kink-pairs along both partials at low stress, towards nucleation of single kink-pairs on individual partials if resolved shear stress exceeds a critical value of 95 MPa. High resolved shear stress allows thus for the activation of extra nucleation mechanisms on dissociated dislocations impossible to occur under the sole action of thermal activation. We suggest that stress condition in conjunction with core dissociation is key to the origin of non-monotonic plastic behaviour of SrTiO₃ at low temperatures.     

β—SiC外延层中晶体缺陷的观察

用腐蚀法研究了β-SiC外延层中的晶体缺陷。腐蚀剂为熔融氢氧化钾。三角形尖底蚀坑对应于位错。在β-SiC中的全位错为立方晶系的73°位错和60°位错。不同堆垛方式的β-siC生长层相遇时将形成{111}交界层错,其腐蚀图象为平行于<110>方向的直线。60°位错可分解为两个1/6<112>SchockLey不全位错,并夹着一片{111}层错构成扩展位错。三个1/6<110>压杆位错与三片{111}层错可构成层错锥体。正、反堆垛的β-SiC可形成尖晶石律双晶,双晶面为(111)。腐蚀法和X射线劳厄法证实了这种双晶的存在。 关键词：     

Phononenfreie Absorptions- und Emissionsübergänge in strahlungsverfärbten NaF-Kristallen

Inγ-irradiated NaF crystals at 5456, 5754, 5837, 6070 and 6146 å zero-phonon lines are observed in absorption and emission. These resonance lines are accompanied by multiphonon absorption and emission bands with their spectral positions nearly mirror symmetric with respect to the zero-phonon line position. By excitation spectra higher excited states are detected. Uniaxial stress splitting of the lines 5754 and 6070 å is studied in absorption and emission. The color centers associated with the lines are found to exhibit rhombic symmetry with rotation axes along 〈110〉 and 〈100〉 directions and monoclinic symmetry with a rotation axis along 〈110〉 direction. The transitions in both centers correspond to 〈110〉 dipoles. In the monoclinic center the transition between the ground and the second excited state seems to correspond to a 〈112〉 dipole.     

Structural specificity in CO and H2 oxidation over single crystal copper surfaces

The reaction rates of CO and H₂ with preadsorbed oxygen on copper surfaces in the 〈110〉 zone presented by a cylindrical single crystal are found to display strong structural sensitivity. In both cases the highest reaction rates are observed for surface structures involving both steps and low index face terraces, and in particular surfaces vicinal to {311} and between either {111} or {100} are found to exhibit the highest rates of reaction. Possible mechanisms for the reaction are discussed, and the data are extrapolated to investigate the steady state oxidation of CO in a CO/O₂ gas mixture over copper surfaces in the 〈110〉 zone. The semi-empirical model describing the steady state oxidation reaction predicts that this reaction also exhibits marked crystallographic anisotropy at CO/O₂ partial pressures chosen to maximise the reaction rate.     

Surface free energy anisotropy measurement of indium

The equilibrium shape of In crystallites shows {111}, {001}; and {100} plane faces. The facets are connected by curved surfaces with smooth edges. The Wulff construction allows the surface free energy anisotropy to be measured in the main zones of the crystal, i.e. 〈001〉, 〈100〉, 〈110〉 and 〈011〉. The higher surface free energy is found in the 〈011〉 direction. Within the accuracy of the measurements the {001} and {100} faces show the same energy.     

Growth and desorption of indium epitaxial layers investigated by high field microscopy

Growth of indium single crystals on tungsten field emission tips was carried out by deposition of indium from vapour in ultra high vacuum, using substrate temperatures in the range of 293–420 K. Two different tungsten tips were used as the substrate: a perfect W single crystal in one case and a bi-crystal with a distinct grain boundary in the other. No influence of the grain boundary on the epitaxial growth was found. Two orientation relationships were observed mostly: {111}In ∥ {110}W with 〈110〉In ∥ 〈111〉W and {111}In ∥ {100}W with 〈110〉In ∥ 〈110〉W. In the first case the growth was initiated by the indium nucleus created on the ledges of the {110}W plane. A field strength of 0.9 V/Å was found for the evaporation field of indium. The field strength of the desorption of In-W interfacial layer atoms was found to be 4.4–5.2 V/Å. A mechanism of the growth of indium crystals has been proposed.