Effects of neutron irradiation and subsequent annealing on the optical characteristics of sapphire

In this paper, the effect of neutron irradiation on sapphire single crystal with fast neutron of 1.0×10¹⁸ and 1.0×10¹⁹ neutrons/cm² has been investigated along with the effect of annealing temperature. It is found that the colorless transparent sapphire single crystals were turned yellow after 10 MeV fast neutron irradiation at room temperature. There are peaks at 206, 230, 258, 305, 358 and 452 nm after neutron irradiation. And the intensity of optical absorption bands decrease with wavelength and annealing temperature. A new absorption peak at 452 nm was found after isothermal annealing at 400 °C for 10 min, which was ascribed to F₂⁺ color center. Because of the recombination of interstitial ions and vacancies, color centers were almost removed after annealing at 1000 °C. The TL peaks were found to shift to higher temperature after neutron irradiation. And a higher fluence of the neutron irradiation would result in deep traps revealed as the new TL peaks at 176 and 227 °C.     

光电倍增管中子直照灵敏度响应

 光电倍增管的中子直照响应对脉冲中子探测器的设计和实际应用具有重要影响。分析了中子束直接照射光电倍增管产生直照响应的过程和机理。中子与光电倍增管入射窗硼硅玻璃中的硼和硅发生(n,α)和(n,p)反应,导致窗玻璃产生荧光,从而使光阴极发射光电子。在5SDH-2小串列加速器上,选用9815B和9850B两种光电倍增管进行实验,得到了光电倍增管的中子直照灵敏度能谱响应曲线。结果表明：中子能量由低到高变化时,光电倍增管的中子直照灵敏度也随之增大;两种光电倍增管的中子直照灵敏度比值为1.9×10²~2.74×10²,该值与其相应的增益比量级一致。     

Nanocrystalline alloys of Fe-Cu-Nb-Si-B after neutron irradiation

Transmission Mössbauer spectroscopy was used to study changes induced by irradiation of amorphous and nanocrystalline samples. In an as-cast sample neutrons mostly affect the orientation of a net magnetic moment. The average hyperfine field decreases towards higher neutron fluencies. In the case of the nanocrystalline samples a new disordered structure is created in the amorpous remainder corresponding to boride phases as it is shown in the samples isothermally heated from 1 to 8 hours. The structural changes of the amorphous remainder depend on the stage of crystallization and total neutron fluencies.     

Change of GeSx parameters after neutron irradiation

In the paper some experimental results on the dependence of thermal conductivity, temperature conductivity coefficient, heat capacity, dc conductivity and ac conductivity on integrated neutron flux within the range from 10¹⁶ n cm^–2 to 10¹⁹ n cm^–2 are described. At integrated neutron flux of 10¹⁷ n cm^–2 an extreme in all parameters was observed. This effect can be explained by means of compensation of unsaturated bonds in the glass due to defects caused by irradiation.     

Comparison between post-irradiation annealing and post-high electric field stress annealing of n-channel power VDMOSFETs

The behavior of the defects created in the gate oxide and at the Si/SiO₂ interface of n-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) by irradiation and positive high electric field stress have been investigated. Interface traps exhibit the same behavior after both types of stress, while there are significant differences in post-stress responses of the charge trapped in the oxide, consisting of fixed and switching component.     

Laser on porous silicon after oxidation by irradiation and annealing

Stimulated emission has been observed from oxide structure of silicon when optically excited by 514 nm laser. The photoluminescence (PL) pulse has a Lorentzian shape with a full width at half maximum (FWHM) of 0.5-0.6 nm. The twin peaks at 694 nm and 692 nm are dominated by stimulated emission which can be demonstrated by its threshold behavior and transition from sub-threshold to linear evolution in light emission. The gain coefficient from the evolution of the peak-emission intensity as a function of the optically pumped sample length has been measured. The oxide structure was fabricated by laser irradiation and annealing treatment on silicon. A model for explaining the stimulated emission has been proposed in which the trap states of the interface between oxide of silicon and porous nanocrystal play an important role.     

Short-range order of amorphous FeNiB alloy after neutron irradiation

Transmission Mössbauer spectroscopy was used to study irradiation-induced changes in the short-range order of an amorphous Fe_80-x Ni _x B₂₀ alloy. Neutron irradiation led to an increase of the width of a hyperfine field distribution implying atomic rearrangement towards disordering. Changes in a mean value of a HFD and Mössbauer line areas can be associated with a reorientation of spins due to radiation damage.     

Optical properties of polycrystalline alumina after irradiation with iron ions and annealing

Optical absorption of polycrystalline corundum (polycor) after irradiation with iron ions and subsequent annealing in vacuum was studied. It was found that substitutional, intrinsic radiation, biographical defects, and complexes on their basis have an effect on the absorption parameters and optical transitions between localized states and allowed bands. The contributions to changes in the optical properties of individual substitutional defects, their clusters, and complexes with the participation of substitutional defects and radiation defects were singled out. The influence of defects and iron oxides formed upon annealing on absorption was estimated. The most proable nature of clusters of substitutional defects and impurity-vacancy complexes was identified.     

Recovery of copper alloys after neutron irradiation at low temperatures

The effects of fast neutron irradiation near 4.2°K on dilute Cu, Cu₃Au, α-CuZn, β-CuZn and CuNi alloys were studied by electrical resistivity measurements. For Cu₃Au, the recovery stage at ～ 100°K becomes more distinct with increasing long-range order, and is attributed to migration of interstitials. The ratio of the number of replacements to the number of displacements (C _R /C _F ) is estimated to be about 50 for neutron irradiation, in contrast to the previously reported value of ～2 for electron irradiation. For α-CuZn, a large recovery stage at ～150°K is found and attributed to annihilation of interstitids whose migration produces ordering. For β-CuZn, migration of interstitials also produces ordering. It is also suggested that in β-CuZn, the ratio C _R /C _F is larger for neutron irradiation than for electron irradiation as in the case of Cu₃Au. The results on CuNi alloys are presented without explanation.     

Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation

In our previous studies, we have proved that neutron irradiation can decrease the single event latch-up(SEL) sensitivity of CMOS SRAM. And one of the key contributions to the multiple cell upset(MCU) is the parasitic bipolar amplification,it bring us to study the impact of neutron irradiation on the SRAM's MCU sensitivity. After the neutron experiment, we test the devices' function and electrical parameters. Then, we use the heavy ion fluence to examine the changes on the devices' MCU sensitivity pre-and post-neutron-irradiation. Unfortunately, neutron irradiation makes the MCU phenomenon worse.Finally, we use the electric static discharge(ESD) testing technology to deduce the experimental results and find that the changes on the WPM region take the lead rather than the changes on the parasitic bipolar amplification for the 90 nm process.     

Recovery of electrical resistivity in amorphous pdsi alloys after low temperature neutron irradiation

Measurements of electrical resistivity after low temperature fast neutron irradiation are made for amorphous Pd₈₀Si₂₀ and Pd₈₀Ni₂Sl₁₈ and then Pd₈₀Si₂₀ annealed at 230°C and 360°C, and the isochronal annealing curves are obtained. The resistivity increase of Pd₈₀Si₂₀ annealed at 360°C is about 10 times larger than that of amorphous alloys and no defined annealing stage is observed in amorphous alloys and Pd₈₀Si₂₀ annealed at 360°C. For amorphous Pd₈₀Si₂₀, about 60% of the resistivity increase by irradiation remains after annealing up to room temperature and these are discussed by the structural relaxation.     

Kinetics of the radiation-induced hardening of EP-823 steel after Ni++ ion irradiation, annealing, and re-irradiation

The ferritic-martensitic steel 12Cr-MoWSiVNbB (EP-823) was irradiated with Ni⁺⁺ ions with the energy 7 MeV, and fluences of 2.7 × 10²⁰ and 3.9 × 10²⁰ ion/m² at 380 C. The irradiated samples were annealed at 600°C and then re-irradiated under the same conditions. After re-irradiation, the microhardness increased to the maximum value and achieved about 70% of the value corresponding to that after primary irradiation. After primary and secondary irradiation with increasing doses, the hardening reaches its saturation level at approximately similar damaging doses and behaves similar to that obtained in the case of the neutron irradiation of ferritic chromium steels.     

Measurement of internal friction and shear modulus of aluminium-magnesium alloy after neutron irradiation at 78 K

The internal friction and shear modulus of polycrystalline Al + 3 at.% Mg was studied as a function of temperature after fast neutron irradiation, at liquid nitrogen temperature (78 K). The initial increase of shear modulus after irradiation is mainly due to the dislocation pinning of the irradiation induced defects. The further increase of shear modulus during annealing is caused by the bulk-effect. The recovery of shear modulus up to room temperature is similar to that of the residual electrical resistivity after a low temperature neutron irradiation. However, we may point out that in contrast to stage II, in stage III we observe a recovery of shear modulus that is distinctly more pronounced than that of electrical resistivity. The temperature dependence of internal friction, before irradiation, shows a peak at 230 K. After neutron irradiation we observe no peak in the temperature region, from 90 K to 300 K.     

The millimeter-wave dielectric properties of Al2O3 after irradiation to moderate neutron fluence

Abstract

Mono- and polycrystalline Al₂O₃ has been irradiated to 3.5· 10¹⁹ f.n/cm², and the increase in dielectric loss has been measured at 28–38 GHz and 144–146 GHz. Step annealing experiments have been performed between 150 °C and 1100 °C. The recovery of dielectric loss has been analyzed aiming at identifying the defect types affecting dielectric loss. A pronounced recovery step observed at 450–550 °C is explained by F-centres with strong electron-lattice coupling which contribute predominantly to dielectric loss at room temperature.     

Recovery of c-axis spacing in pyrolytic graphite after neutron irradiation at 5 K

Recovery of the c-axis spacing expansion in pyrolytic graphite after neutron irradiation at 5 K was measured in the range of 5 K ～ 900 K by the X-ray diffraction method. An unexpectedly large recovery of the spacing was found around 100 K.     

On the effect of cure cycle parameters and dopants on pre and post irradiation annealing response of CR-39 track detectors

The effect of additives and cure cyle parameters on pre and post irradiation annealing characteristics of CR-39 detectors has been investigated. Effect of pre and post irradiation annealing on bulk etch rate, sensitivity, track diameter and etching behaviour of various CR-39 detectors has been investigated.     

Electron irradiation assisted annealing of boron and phosphorus implanted silicon layers

Radíatíon annealing due to a 1.0 MeV election beam of intensity 25 μA/cm² was studied in silicon samples implanted with phosphorus and boron ions and annealed at 350–500°C. A significant annealing enhancement as compared to thermal annealing has been observed in phosphorus-implanted samples. In boron-implanted samples, a fast initial rise of electrical activity is followed by a continuous decrease of carrier concentration. The results are interpreted in terms of two competing processes: electron irradiation induced removal of post-implantation defects and introduction of simple electrically active defects.     

退火对He注入及随后208 Pb27+辐照的Al2O3单晶PL谱的影响

利用高能离子研究了110 keV的He+注入Al2O3单晶及随后230 MeV的208pb27+辐照并在不同温度条件下退火样品的光致发光的特性.从测试结果可以清楚地看到在375 nm,390 nm,413 nm和450 nm出现了强烈的发光峰.经过600 K退火2 h后测试结果显示,390 nm发光峰增强剧烈,而别的发光峰显示不明显.在900 K退火条件下,390 nm的发光峰开始减弱相反在510 nm出现了较强的发光峰,到1100 K退火完毕后390 nm的发光峰完全消失,而510 nm的发光峰相对增强.从辐照样品的FTIR谱中看到,波数在460-510 cm-1间的吸收是振动模式,经过离子辐照后,吸收带展宽,随着辐照量的增大,Al2O3振动吸收峰消失,说明Al2O3振动模式被完全破坏.1000-1300cm-1之间为Al-O-Al桥氧的伸缩振动模式,辐照后吸收带向高波数方向移动.退火后的FTIR谱变化不大.