Positron trapping mechanism in plastically deformed magnesium

In order to investigate positron–dislocation interactions, the evolution of the positron lifetime parameters with the degree of deformation of Mg samples was studied. For a low degree of thickness reduction a second component of 244?ps could be decomposed from the positron lifetime spectra. This component was attributed to dislocations introduced during deformation. For thickness reductions higher than 15% the value of the second component increases to 253?ps. This lifetime was assigned to jogs introduced along dislocations when multiple deformation systems were activated at high degrees of deformation. Positron experimental results were interpreted by the assumption that dislocations act as a previous step to positron localization at jogs. A trapping model with three stages, bulk annihilation and trapping at both dislocations and jogs, has been proposed to describe the trapping mechanism in the highly deformed samples. A sample with a thickness reduction of 40% was annealed from room temperature to 525?K. A recovery stage centred at 425?K was been detected. According to the literature this stage has been assigned to anneal out of dislocations.     

Recovery of deformed iron studied by positrons

The isochronal annealing of two plastically deformed irons of 99.998% and 99.86% purities is studied by positron lifetime and annihilation line shape measurements. The results show that trapping of positrons is caused by dislocations. At around 300° C a recovery process attributed to a rearrangement of dislocation structure is observed in the pure but not in the impure iron. The positron lifetime in deformed and recrystallized state is found to be 167 ps and 117 ps, respectively.     

利用正电子湮没技术研究钾掺杂钨合金中的缺陷

钨合金中钾的掺杂会引入大量的缺陷,如尺寸几十纳米的钾泡、高密度的位错以及微米量级的晶粒带来的晶界等,这些缺陷的浓度和分布直接影响合金的服役性能.本文运用正电子湮没谱学方法研究钾掺杂钨合金中的缺陷信息,首先模拟计算了合金中各种缺陷的正电子湮没寿命,发现钾的嵌入对空位团、位错、晶界等缺陷的寿命影响很小;然后测量了不同钾含量掺杂钨合金样品的正电子湮没寿命谱,建立三态捕获模型,发现样品中有高的位错密度和低的空位团簇浓度,验证了钾对位错的钉扎作用,阐述了在钾泡形成初期是钾元素与空位团簇结合并逐渐长大的过程;最后使用慢正电子多普勒展宽谱技术表征了样品中缺陷随深度的均匀分布和大量存在,通过扩散长度的比较肯定了钾泡、晶界等缺陷的存在.     

Positron study of the martensitic transformation in Fe-29.5at.%Ni

Precision measurements of positron lifetime spectra in Fe-29.5at.%Ni alloy specimens were performed to clarify the nature of the martensitic transformation in this alloy. The forward transformation did not introduce any defects which behave as strong trapping sites for positrons. On the other hand, the reverse transformation accompanied the production of defects, to which the positron lifetime is sensitive, maybe dislocations. From the present results, the nature of the transformation was discussed.     

Evolution of vacancy defects and dislocations in surface layers of iron as a result of pulsed electron beam treatment

Using a micro-beam of ions (PIXE, RBS), a slow positron beam, measurements of positron lifetime, TEM and SEM techniques, formation of vacancy defects and dislocations has been found in a near-surface iron layer as a result of pulsed electron beam treatment. It has been shown that as a result of the HCEB treatment regions of a low local electron density are formed, which seem to be “embryos” for craters. In spite of the crater formation and high dislocation density (exceeding 10¹⁰ cm⁻²) in a near-surface layer, we found a decrease in wear resistance to dry friction and an increase in microhardness.     

Positron annihilation studies on the migration of deformation induced vacancies in stainless steel AISI 316 L

Positron lifetime measurements were carried out at room temperature before and after isochronous annealing of cylindrical, machined fatigue specimens and of round slabs of austenitic stainless steel AISI 316 L deformed in compression. Annealing experiments are evaluated in terms of vacancy migration and sinking to grain boundaries and dislocations. The model assumes spherical grains with a homogeneous initial distribution of vacancies. A vacancy migration enthalpy of H^M _V=(0.9±0.15) eV was found. It is concluded that positron trapping at dislocation lines does not significantly contribute to positron lifetime measurements at room temperature and that single vacancies are the dominating positron traps. Positron annihilation depth profiling on cross-sectional areas prepared from machined specimens using a positron microprobe with 10 μm spatial resolution shows that machining of cylindrical specimens creates vacancies up to 5 mm below the surface. Received: 11 August 2000 / Accepted: 13 November 2000 / Published online: 28 February 2001     

Fe-Ni合金马氏体相变缺陷的正电子湮没研究

本文中用正电子湮没技术研究了Fe-Ni系合金的马氏体相变。实验结果表明,含镍量28.22—31.30wt％的六种退火态合金,正相变后,产生了大量的缺陷,使正电子湮没平均寿命及多普勒加宽线型参数S值分别约增加30％和20％。对28.93wt％Ni和31.30wt％Ni两种马氏体亚结构不同的合金,观测了正电子湮没参数与处理温度之间的关系,发现:缺陷主要产生在爆发马氏体形成阶段;在等时退火曲线上形成两个明显的台阶,是由于空位和位错恢复引起的。 关键词：     

Hydrogen-induced strain localisation in oxygen-free copper in the initial stage of plastic deformation

Single crystals of oxygen-free copper oriented to easy glide of dislocations were tensile tested in order to study the hydrogen effects on the strain localisation in the form of slip bands appearing on the polished specimen surface under tensile straining. It was found that hydrogen increases the plastic flow stress in Stage I of deformation. The dislocation slip localisation in the form of slip bands was observed and analysed using an online optical monitoring system and atomic force microscopy. The fine structure of the slip bands observed with AFM shows that they consist of a number of dislocation slip offsets which spacing in the presence of hydrogen is markedly reduced as compared to that in the hydrogen-free specimens. The tensile tests and AFM observations were accompanied with positron annihilation lifetime measurements showing that straining of pure copper in the presence of hydrogen results in free volume generation in the form of vacancy complexes. Hydrogen-enhanced free-volume generation is discussed in terms of hydrogen interactions with edge dislocation dipoles forming in double cross-slip of screw dislocations in the initial stage of plastic deformation of pure copper.     

Positron trapping at defects in evaporated films

The trapping of positrons at defects in evaporated copper and lead films has been investigated. Measurements of the positron lifetime spectra in high purity films over a wide range of deposition rates and a limited range of substrate temperatures can be interpreted in terms of positron trapping at both grain boundaries and dislocations in the copper films and at grain boundaries only in the lead films. Isochronal annealing studies indicate that recovery and recrystallization of these films is qualitatively similar to that of the bulk metal after deformation.     

A slow positron lifetime study of the annealing behaviour of an amorphous silicon layer grown by MBE

We have studied MBE grown amorphous silicon, which was recrystallized at different temperatures for one hour, with a pulsed positron beam. A positron lifetime of 538±10 ps in the as-grown state is attributed to microvoids containing at least 10 vacancies. An incompletely recrystallized sample annealed at 500°C shows an additional long lifetime from ortho-positronium (o-Ps) pick-off annihilation. The o-Ps component disappears for samples, recrystallized at 700°C and above, and the defect lifetime steadily decreases with higher annealing temperature until a value of 310 ps is reached for the layer annealed at 1200°C. This value is explained by positron trapping at dislocations or small vacancy defects stabilized by dislocations or impurities.Paper presented at the 132nd WE-Heraeus-Seminar on Positron Studies of Semiconductor Defects, Halle, Germany, 29 August to 2 September 1994     

Vacancy–solute interactions during ageing of a cold-worked Mg–RE-based alloy

The vacancy–solute interactions during artificial ageing at 250^○C of cold worked samples of a commercial magnesium alloy WE54 (Mg–RE based) were studied by coincidence Doppler broadening of positron annihilation radiation and positron annihilation lifetime spectroscopy. The results show that, in the as-cold-worked state, the vacancies are associated with dislocations that are generated by the cold work and that, after artificial ageing at 250^○C, the vacancies are associated with solute elements and help the formation of precipitate precursors. This mechanism accelerates the formation of hardening precipitates without any apparent changes in the precipitation sequence and in the products of the decomposition of the supersaturated solid solution. The present study demonstrates that the stronger hardening response achieved in the cold-worked samples originates from the presence of a higher concentration of vacancies that is introduced by the cold work and is retained in the first few minutes of ageing.     

Defect study on electron irradiated GaAs by means of positron annihilation

Measurements of the positron lifetime and Doppler-broadened annihilation-radiation have been performed in electron-irradiated GaAs. The positron lifetime at the irradiation induced defects was 0.250 ns at 300 K. The defect clustering stage was found to occur at around 520–620 K, and the coarsening and annealing stage is believed to be above 620 K. Similar annealing stages were also observed in GaAs lightly doped with Si (0.2×10¹⁸ cm^–3). Both the lifetime and the S-parameter in the irradiated GaAs were found to decrease with temperature from 300 K to 100 K, suggesting the coexistence of shallow traps in electron irradiated GaAs.     

钨辐射损伤随辐照剂量变化的重离子辐照模拟研究

采用重离子辐照模拟方法和正电子湮没寿命测量技术研究了钨辐射损伤随辐照剂量的变化。20,60和90dpa（每个原子的位移次数）辐照损伤水平的实验结果表明,辐照在钨中产生单空位、双空位、位错和空位团等缺陷;随辐照剂量的增大,单空位、双空位和位错浓度增加,空位团的尺度和浓度都随之增大。Radiation damage in W has been studied as a function of irradiation dose by heavy ion simulation and positron annihilation lifetime measurement. The experimental results of 20, 60 and 90 dpa irradiations illustrate that the mono-and di-vacancies, dislocations and vacancy clusters are produced by the irradiation. The concentrations of the mono-and di-vacancies and dislocations and both the concentration and size of the vacancy clusters or voids all increase with the increasing of the irradiation dose.     

用正电子湮没技术研究纯镍多晶体疲劳过程中的晶体缺陷

对充分退火纯镍多晶体样品分组进行了恒应变幅拉-压疲劳试验和冷轧形变后,测量了正电子湮没参数;并选少数疲劳试样进行了电子显微镜薄膜衍射象观察。用多指数拟合方法从疲劳试样的正电子湮没寿命谱中分解出与正电子在小空位团中湮没相应的成份。这些寿命值在不同疲劳阶段分别平均为209,255和>300ps。其相对强度的变化与小空位团浓度增加然后尺寸增大的趋势相符合。从而,本文根据正电子湮没技术提供了纯镍多晶体疲劳过程中除大量位错外空位聚集的实验证据。利用简单三态正电子捕获模型估算了上述缺陷浓度。本工作还提供了用多指数拟合方法分解复杂寿命谱和用于简单三态捕获模型的例证。 关键词：     

形变充氢多晶纯钴中缺陷的正电子湮没研究

用正电子寿命和多普勒线形参数测量技术,研究了形变和形变充氢多晶钴试样的缺陷性质及其回复行为。观察到形变样品阴极充氢后,氢致缺陷为一定量的位错和空位以及少量的空位团。没有观察到微空洞和微裂纹的产生。单空位的回复温度范围为73—260℃,位错和空位团的退火发生在350—670℃温度范围。测得空位的迁移激活能为E_v^m=1.09±0.07eV。 关键词：     

Specificity of stage III in electron-irradiated Fe-Cr alloys

It has been found that no typical features of stage III are traced in the resistivity recovery (RR) and positron lifetime (PL) data of electron-irradiated Fe-Cr alloys (4–10 at.%). None of the observed RR stages has shifted its temperature position with changing concentration of defects, which is characteristic of stage III. A new quantity was considered–the difference between RRs (DRR) of samples having different defect concentrations. The onset of free migration is indicated in the DRR plot by a peak, which corresponds in physical meaning to a partial (separated) RR peak of the free migration stage. Such a single peak was found in Fe-9Cr at 205–210?K and identified as the sign of stage III, however, the peak amplitude turned out inverted, i.e. it corresponded to a resistivity rise instead of the usual resistivity drop. In Fe-4Cr the peak amplitude is about zero. Such anomalous RR behaviour is related to a very high resistivity contribution of immobile di-vacancies formed in stage III. This contribution masks the resistivity reduction and makes stage III invisible in conventional RR spectra. Close PLs in mono- and di-vacancies make stage III poorly detectable by PL spectroscopy as well. The RR stage and PL increase at 220?K, considered earlier as the signs of stage III, are actually connected with the onset of long-range migration of interstitial atoms. Recombination and a release of mobile mono-vacancies resulted from this onset give rise, correspondingly, to a conventional RR stage and clearly detectable enlargement of the small vacancy aggregates formed in stage III.     

Helium bubbles in neutron-irradiated copper-boron studied by positron annihilation

The influence of helium, introduced by the ¹⁰B(n, α)⁷Li reaction, on the evolution of defect structure in copper containing a few hundred ppm boron has been studied by detailed positron lifetime and two-photon angular correlation measurements, supplemented by TEM studies. In the as-irradiated state of Cu-B, two lifetime components have been resolved. The shorter lifetime, τ₁, = 167 ps of 97% intensity, has been understood as due to positron trapping at small helium-vacancy complexes, while the longer lifetime τ₂ = 450 ps of 3% intensity is explained as due to helium-free voids. Marked changes in the annihilation characteristics observed at 670 K are interpreted in terms of the nucleation of microbubbles, controlled by thermally activated helium migration to vacancy traps. Corroborative evidence for the onset of helium clustering is obtained from the change in the average size of positron traps as deduced from the smearing of the measured angular correlation spectra. Helium bubbles and helium-free voids coexisting in the system have been distinguished by a three-component analysis of the lifetime spectra. Bubbles are found to be stable beyond the temperature of dissociation of voids. The size and concentration of bubbles, determined independently by TEM measurements, are in accordance with the positron annihilation results in the growth stage. The observed positron lifetime at higher annealing temperatures has been analysed by relating the annihilation rate to helium atom density and helium pressures in bubbles evaluated. These pressures are in satisfactory agreement with the estimates of equilibrium pressures, leading to the conclusion that bubble relaxation occurs by the mechanism of thermal vacancy condensation.     

金属中点缺陷的电子结构和缺陷谱

本文以胶体模型为基础,利用密度冷函理论和局域密度近似研究了过渡金属Cr,Fe,Ni和贵金属Cu中空位型缺陷、氢杂质、空位-杂质复合体的电子结构以及以正电子湮没寿命表征的缺陷谱。表明了用正电子湮没寿命谱研究金属点缺陷电子结构和缺陷尺度大小的可行性。 关键词：     

Behaviour of vacancies in dilute Fe–Re alloys: a positron annihilation study

Positron annihilation lifetime spectroscopy was used in a room temperature study of the influence of heat treatment on behaviour of vacancies in Fe_0.97Re_0.03 and Fe_0.94Re_0.06 alloys. In this experiment, the vacancies were created during the formation and further mechanical processing of the iron systems under consideration so the lifetime spectra of positrons were collected at least twice. The first samples were taken just after the melting process in an arc furnace, and the second ones were taken for the specimens annealed at 1,270 K and then cold-rolled at room temperature. After that, the spectra were measured for all studied samples after annealing at some temperatures gradually increasing from 300 to 1,270 K. It was found that vacancy-Re pairs are the dominant type of structural defects in alloys just after the melting process. In the case of alloys after a cold rolling process, the dominant type of structural defects is vacancies associated with edge dislocations. Moreover, for cold-rolled samples annealed at 473–573 K, the growth of the vacancy clusters associated with edge dislocations is observed by an increase in the mean positron lifetime. Finally, at temperatures above 573 K, vacancy clusters associated with edge dislocations as well as vacancy-Re pairs become unstable, and freely migrating vacancies sink at grain boundaries.     

Positron annihilation in boron-implanted n-type silicon

The ion damaged effect and subsequent isothermal annealing in boron-implanted Si was studied by positron annihilation lifetime measurements. The mean positron lifetime in preimplanted n-type Si is 243 psec. The variation of mean lifetime is detectable when the implanted boron dose is greater than 1.0x10¹⁵/cm². The saturated mean positron lifetime (247 psec) occurs when the implantation dose reaches 2.5x10¹⁵/cm². The mean electron density of the positron sensitive defects is estimated to be about 85% less than that in the perfect parts of the crystal. Isothermal annealing was held in every 5-minute step at 1000°C. In the first step, the positron lifetime in the implanted sample increases slightly and then decreases completely to its initial state in the 3rd step. Sheet resistance of the sample monitored by 4-point probe method has been found closely related to the positron lifetime.