铁硒基超导研究新进展:高质量(Li,Fe)OHFeSe单晶薄膜

单晶薄膜形态的高温超导材料对于相关基础科学研究和应用开发都极为重要.多带的铁基高温超导体往往呈现丰富的物理现象,并具有较高的超导临界参数.特别是近年发现的插层（Li,Fe）OHFeSe超导体,无论对高温超导机理还是应用研究而言,都日益受到重视,已成为铁基家族中重要的典型材料.但是,该化合物含有OH键,加热易分解.因此,现有的常规高温成膜技术均不适用于生长该薄膜材料.为解决这一生长难题,我们最近发明了基体辅助水热外延生长法,实现了超导薄膜制备技术上的突破.本文简要介绍用此软化学成膜技术首次成功制备出（Li,Fe）OHFeSe单晶薄膜.该薄膜材料具有优良的结晶质量和较高的超导临界参数,特别是其高的临界电流密度和上临界场对应用开发有实际价值.因此,（Li,Fe）OHFeSe超导单晶薄膜的成功合成,为机理研究和应用开发分别提供了重要的实验载体和备选材料.另外,该薄膜技术也有望应用于其他功能材料的探索与合成,尤其是对常规手段难以获取的材料更具重大价值.     

FeSe基超导单晶与薄膜研究新进展:自旋向列序、电子相分离及高临界参数

FeSe基超导体的超导临界温度可大范围调控,物理现象丰富,是非常规超导机理研究的热点.由于较高的超导临界参数及易于加工等特点,FeSe基超导体在超导应用开发方面也日益受到重视.大尺寸高质量的单晶和薄膜形态的FeSe基超导材料,对于相关基础科学研究和应用开发都极为重要.作者近年来先后开发和发明了水热离子交换（ion-exchange）、离子脱插（ion-deintercalation）、基底辅助水热外延生长方法,成功解决了二元FeSe和插层（Li,Fe）OHFeSe超导体高质量单晶和薄膜的生长和物性调控难题.进而在相关物理问题的研究中取得新进展,包括发现二元FeSe中自旋向列序与超导电性密切相关,观测到（Li,Fe）OHFeSe中的电子相分离现象.此外,（Li,Fe）OHFeSe超导薄膜呈现很高的超导临界电流密度和上临界磁场,其应用前景值得关注.     

Spin-filter tunneling in superconducting mesa structures with a ferromagnetic manganite interlayer

We have studied the current transport and magnetism in epitaxial hybrid superconducting mesa structures consisting of a cuprate superconductor and superconducting niobium with a manganite LaMnO₃ (LMO) interlayer. We have shown experimentally using magnetic resonance that the magnetization, magnetic anisotropy parameters, and transition temperature to the ferromagnetic state of the interlayer of the structures are analogous to those of an autonomous LMO film grown on a neodymium gallate substrate. The estimate of the barrier height obtained from the dependence of the characteristic resistance of mesa structures on the interlayer thickness has shown the barrier height variation with the thickness in the range of 5–30 mV. The temperature dependences of the conductivity of the mesa structure in the range between superconducting transition temperatures of the superconductors can be described in the theory taking into account the d-wave nature of the superconductivity for one of the electrodes and the spin-filtering of carriers passing through the tunnel interlayer. Spin-filtering is confirmed by the tunnel magnetoresistance and the high sensitivity of mesa structures to a weak external magnetic field in a voltage interval smaller than the gap of niobium.     

EuS/Ta异质结的极大磁电阻效应

在铁磁/超导异质结中,铁磁体的交换场通过近邻效应将导致超导体准粒子态密度的塞曼劈裂.基于该效应,在外磁场不强的情况下,通过外加磁场可以有效地调节铁磁/超导界面处的交换作用,从而实现超导体在正常态和超导态之间转换,产生极大磁电阻.本文利用脉冲激光沉积方法制备了EuS/Ta异质结并研究了其电磁特性.Ta在3.6 K以下为超导态,EuS在20 K以下为铁磁态.在2 K时,EuS/Ta异质结中可观测蝴蝶型磁滞回线,证明在低磁场下(<±0.18 T)异质结中EuS铁磁态和Ta超导态共存.磁输运测试表明,通过施加外磁场可以有效调节EuS的交换场,随着交换场的增大,同时也加强了界面处的交换作用,从而抑制Ta的超导态,实现了Ta在超导态和正常态之间的转变,在EuS/Ta异质结中观测到了高达144000%的磁电阻.本文制备的EuS/Ta异质结具有极大磁电阻效应,在自旋电子学器件中有潜在的应用前景.     

The transport properties of Dirac fermions in chemical vapour-deposited single-layer graphene

Abstract

The electronic transport properties of Dirac fermions in chemical vapour-deposited single-layer epitaxial graphene on anSiO₂/Si substrate have been investigated using the Shubnikov–de Haas (SdH) oscillations technique. The magnetoresistance measurements were performed in the temperature range between 1.8 and 43 K and at magnetic fields up to 11 T. The 2D carrier density and the Fermi energy have been determined from the period of the SdH oscillations. In addition, the in-plane effective mass as well as the quantum lifetime of 2D carriers have been calculated from the temperature and magnetic field dependences of the SdH oscillation amplitude. The sheet carrier density (1.42 × 10¹³ cm^?2 at 1.8 K), obtained from the low-field Hall Effect measurements, is larger than that of 2D carrier density (8.13 × 10¹² cm^?2). On the other hand, the magnetoresistance includes strong magnetic field dependent positive, non-oscillatory background magnetoresistance. The strong magnetic field dependence of the magnetoresistance and the differences between sheet carrier and 2D carrier density can be attributed to the 3D carriers between the graphene sheet and the SiO₂/Si substrate.     

Field-suppressed interfacial spin scattering in YBa2Cu3O7−δ/La0.67Sr0.33MnO3 heterostructures

The superconductivity and magnetoresistance (MR) of epitaxial bilayers consisting of YBa₂Cu₃O_7?δ (YBCO) and La_0.67Sr_0.33MnO₃ (LSMO) are investigated with respect to the proximity and spin polarization effects. In the region of the mixed vortex state near the onset temperature of the superconducting transition, the diffusion of the spin-polarized quasiparticles from the LSMO to the YBCO is evidenced by their distinct magnetotransport behaviors, which are characterized by two superconducting transitions. It is revealed that the second transition is strongly dependent on the applied magnetic field, demonstrating an abnormal pair-breaking effect. This effect, together with the reduced MR, is believed to arise from an increase in the spin injection efficiency induced by the suppressed interfacial spin scattering, disclosing a new perspective for understanding the magnetotransport phenomena in proximity-coupled superconductor/ferromagnet (S/F) hybrids.     

Study of the magnetic superconductor,Y9Co7, at high pressure and high magnetic field

We have measured the electrical resistance and magnetic susceptibility of the magnetic superconductor, Y_gCo₇, at pressures up to 20 kbar and in magnetic fields up to 6T. We have found that pressure suppresses the magnetism resulting in a higher superconducting transition temperature and conclude that Y₉Co₇ is an itinerant ferromagnet, not a spin-glass. Pressure also sharpens the superconducting transition and increases the critical magnetic field, signifying that the long range ferromagnetic and superconducting order parameters co-exist but vary spatially. For pressures greater than 6 kbar, the magnetoresistance is always positive, further indicating the suppresion of magnetism by high pressure.     

In-plane magnetoresistance of electron-doped superconducting thin films Pr0.9LaCe0.1CuO4

We measured the in-plane magnetoresistance of Pr_0.9LaCe_0.1CuO₄ (PLCCO) epitaxial thin films under various magnetic fields H applied parallel to the tetragonal c-axis. The measurements were performed at the superconducting state as well as the normal state. As the magnetic field is between the low critical field H_c1 and upper critical field H_c2, a critical scaling behavior of electrical resistivity is found. We analyze the electrical transport properties and show the magnetic field H dependence of glass transition temperature T_g and the characteristic temperature T^* for the PLCCO film, which may shed some light on vortex behavior in electron-doped superconductors.     

In-plane anisotropy in two-dimensional electron gas at LaAlO_3/SrTiO_3(110) interface

A systematic study of the two-dimensional electron gas at La AlO_3/SrTiO_3(110) interface reveals an anisotropy along two specific directions, [001] and 1ī0. The anisotropy becomes distinct for the interface prepared under high oxygen pressure with low carrier density. Angular dependence of magnetoresistance shows that the electron confinement is stronger along the 1ī0 direction. Gate-tunable magnetoresistance reveals a clear in-plane anisotropy of the spin–orbit coupling,and the spin relaxation mechanism along both directions belongs to D'yakonov–Perel'(DP) scenario. Moreover, in-plane anisotropic superconductivity is observed for the sample with high carrier density, the superconducting transition temperature is lower but the upper critical field is higher along the 1ī0 direction. This in-plane anisotropy could be ascribed to the anisotropic band structure along the two crystallographic directions.     

La1－xPrxMnO3(x=0.1，0.2)薄膜庞磁电阻性质的研究

一种新的庞磁电阻氧化物薄膜La_1-xPr_xMnO₃(x=0.1，0 .2)薄膜用脉冲激光沉积(PLD)方法生长在(100)SrTiO₃单晶基底上.XRD结果显示 薄膜具有很好的外延单晶取向.电输运和磁性质的研究表明薄膜具有显著的庞磁电阻效应(CM R)效应，其中磁电阻比率达95％(在5T的磁场下).X射线光电子能谱(XPS)的结果表明薄膜体 系中Pr离子的价态为+4价，因此该薄膜很可能是电子掺杂的庞磁电阻体系. 关键词： 脉冲激光沉积 1-xPr_xMnO₃')" href="#">La_1-xPr_xMnO₃ 电子 掺杂 庞磁电阻     

Workshop on fast structural changes

Copper-oxide (cuprate) high-temperature superconductors are doped Mott insulators. The undoped parent compounds are antiferromagnetic insulators, and superconductivity occurs only when an appropriate number of charge carriers (electrons or holes) are introduced by doping. All cuprate materials contain CuO₂ planes (Figure 1a) in their crystal structure; the doped carriers are believed to go into these CuO₂ planes, which are responsible for high-temperature superconductivity. High-temperature superconductors are characterized by their unusual physical properties, both in the superconducting state (below the superconducting transition temperature T_c) and in the normal state (above T_c). Since the discovery of high-temperature superconductivity in 1986 [1], these unusual physical properties and the mechanism of superconductivity have been prominent issues in condensed matter physics [2].     

Synthesis of superconductor MgCNi3 with carbon nanotubes

MgCNi3, an intermetallic compound superconductor with a cubic perovskite crystal structure, has been synthesized using fine Mg and Ni powders and carbon nanotubes （CNTs） as starting materials by the conventional powder metallurgy method. The composition, microstructure and superconductivity are characterized using x-ray diffraction （XRD）, energy dispersive x-ray （EDX） analysis, scanning electron microscopy （SEM）, and superconducting quantum interference device （SQUID） magnetometer. The results indicate that the phases of the synthesized samples are MgCNi3 （major phase） and traces of C and MgO. The MgCNi3 particle sizes range from several hundreds of nanometres to several micrometres. The onset superconducting transition temperature Tc of the MgCNi3 sample is about 7.2 K. The critical current density Jc is about 3.44 × 10^4 A/cm^2 calculated according to the Bean model from the magnetization hysteresis loop of the slab MgCNi3 sample at 5 K and zero applied field.     

在蓝宝石上生长CeO2 缓冲层的原位双温工艺法及Tl-2212薄膜的技术改进

报道了在蓝宝石衬底上制备CeO₂缓冲层的原位双温工艺法及其对Tl₂Ｂa₂CaCu₂Ｏ₈（Tl-2212）薄膜超导特性的影响．XPS和AFM测试结果表明,采用原位双温工艺法制备缓冲层,具有工艺简单,薄膜表面光滑,衬底材料原子扩散量少等特点．在先驱膜的高温后退火过程中,40 nm厚的CeO₂薄膜就能有效地阻挡衬底材料对超导薄膜底层的扩散．随后制备厚度为530 nm的Tl-2212 关键词： Tl-2212超导薄膜 蓝宝石 氧化铈缓冲层 原位双温工艺法     

Magnetotransport effects in paramagnetic Gd x Mn1 − x S

The electrical resistance of Gd _x Mn_{1 ? x} S solid solutions with x = 0.1, 0.15, and 0.2 has been measured at magnetic field H = 0.8 T and at zero magnetic field within the 100 K < T < 550 K temperature range. The magnetoresistance peak is observed above room temperature. On heating, the composition with x = 0.2 exhibits the change of magnetoresistance sign from positive to negative and the magnetoresistance peak near the transition to the magnetically ordered state. The experimental data are interpreted in the framework of the model involving the orbital ordering of electrons and the arising electrical polarization leading to the changes in the spectral density of states for electrons in the vicinity of the chemical potential in the applied magnetic field.     

On the superconductivity in T1BiTe2

The temperature dependence of the magnetic susceptibility of T1BiTe₂ and T1Te, in the range 0.050 to 1.5K, has been investigated. The superconducting transition in the T1Te samples at T = 0.190K is discovered. In T1BiTe₂ superconductivity has not been seen down to 0.050 K. All this shows that the superconducting transition discovered earlier by Hein and Swiggard at 0.140 K in T1BiTe₂ is characteristic of the T1Te foreign phase.     

Transport properties of NdBa2Cu3O6+x ceramics at the edge of the superconducting region upon a decrease in carrier density as a result of oxygen disordering in the Cu-O x planes

An initially nonsuperconducting ceramic sample with the composition NdBa₂Cu₃O_6+x is brought, by means of pressure and quenching, to a state with a high carrier density and a superconducting transition, after which it is returned to the initial state by gradual annealing in several steps. The evolution of the magnetoresistance of the sample showed that even in the most resistive state realized in the experiment the superconducting interaction influences the resistance of the sample at fields all the way up to 5–6 T. In an 8 T field the change in resistance in this state in the temperature interval from 0.4 K to 20 K is described well by a logarithmic law ΔR∝ logT. Pis’ma Zh. éksp. Teor. Fiz. 65, No. 6, 475–480 (25 March 1997)     

High temperature superconductivity research at the IBM thomas J. Watson and Almaden research centers

Complementing the work of Bednorz and Müller, which started the field of high temperature oxide superconductivity, the IBM Research laboratories at Yorktown Heights in Almaden have made contributions also via many outside collaborations across the full scope of this field. Materials work includes the identification, separation and structural characterization of the YBa₂Cu₃O_7–x phase, the detection of superconductivity and antiferromagnetism in La₂CuO₄, and the deposition of YBaCuO films with transition temperatures above 77 K by electron-beam deposition and plasma spraying. Characterization work includes measurement of the superconducting energy gap by far-infrared and tunneling measurements, study of Meissner and diamagnetic shielding, observation of superconducting fluctuations, correlation of [Cu–O]⁺ complex concentration withT _c, and determination of valence electronic structure by photoemission. Theoretical work includes proposal of an interband scattering mechanism for superconductivity, a mean-field solution to an electron-interaction model, band-structure calculations, and a phenomenological model for lattice parameters and their influence onT _c. YBa₂CU₃O_7–d single crystals have been synthesized and shown to exhibit up to 70:1 magnetic anisotropy. In work of relevance to applications, the first thin film SQUIDs have been operated in temperatures up to 68 K, epitaxial films on SrTiO₃ have been found to sustain critical currents of more than 10⁵ A/cm² at 77 K, and coatings, superconducting above 77 K, have been deposited by plasma spraying.     

Superconductivity in a simple model of the pseudogap state

An analysis is made of characteristics of the superconducting state (s-and d-pairing) using a simple, exactly solvable model of the pseudogap state produced by fluctuations of the short-range order (such as antiferromagnetic) based on a Fermi surface model with “hot” sections. It is shown that the superconducting gap averaged over these fluctuations is nonzero at temperatures higher than the mean-field superconducting transition temperature T _c over the entire sample. At temperatures T > T _c superconductivity evidently exists in isolated sections (“ drops”). Studies are made of the spectral density and the density of states in which superconducting characteristics exist in the range T > T _c however, in this sense the temperature T = T _c itself is no different in any way. These anomalies show qualitative agreement with various experiments using underdoped high-temperature superconducting cuprates.     

Electrical transport properties of CuS single crystals

Electrical resistivity, transverse magnetoresistance and thermoelectric power measurements were performed on CuS high quality single crystals in the range 1.2-300 K and under fields of up to 16 T. The zero field resistivity data are well described below 55 K by a quasi-2D model, consistent with a carrier confinement at lower temperatures, before the transition to the superconducting state. The transverse magnetoresistance develops mainly below 30 K and attains values as large as 470% for a 16 T field at 5 K, this behaviour being ascribed to a band effect mechanism, with a possible magnetic field induced DOS change at the Fermi level. The transverse magnetoresistance shows no signs of saturation, following a power law with field Δρ/ρ(0) ∝ H(1.4), suggesting the existence of open orbits for carriers at the Fermi surface. The thermoelectric power shows an unusual temperature dependence, probably as a result of the complex band structure of CuS.     

Addendum to “Switching effect and the metal–insulator transition in electric field” by A.L. Pergament et al. [J. Phys. Chem. Solids 71 (2010) 874]

In the paper mentioned above we reported on the switching mechanism in vanadium dioxide which was shown to be based on the electronically-induced Mott insulator-to-metal transition occurring in conditions of the non-equilibrium carrier density excess in the applied electric field, and the proposed model involved the dependence of the carrier density n on electric field (the Poole–Frenkel effect), as well as the dependence of the critical electric field on n. The data on the n(T) dependence were obtained on the assumption of a temperature-independent carrier mobility μ, and the problem of n reduction at lower temperatures was not fully understood. In this Letter we revisit this problem in the light of some recent data on the μ(T) dependence for VO₂. It is shown that the adjusted values of n, taking into account this μ(T), correspond to the Mott critical density within an order of magnitude.