Recent Developments of Crystallographic Analysis Methods in the Scanning Electron Microscope for Applications in Metallurgy

The field of metallurgy has greatly benefited from the development of electron microscopy over the last two decades. Scanning electron microscopy (SEM) has become a powerful tool for the investigation of nano- and microstructures. This article reviews the complete set of tools for crystallographic analysis in the SEM, i.e., electron backscatter diffraction (EBSD), transmission Kikuchi diffraction (TKD), and electron channeling contrast imaging (ECCI). We describe recent relevant developments in electron microscopy, and discuss the state-of-the-art of the techniques and their use for analyses in metallurgy. EBSD orientation measurements provide better angular resolution than spot diffraction in TEM but slightly lower than Kikuchi diffraction in TEM, however, its statistical significance is superior to TEM techniques. Although spatial resolution is slightly lower than in TEM/STEM techniques, EBSD is often a preferred tool for quantitative phase characterization in bulk metals. Moreover, EBSD enables the measurement of lattice strain/rotation at the sub-micron scale, and dislocation density. TKD enables the transmitted electron diffraction analysis of thin-foil specimens. The small interaction volume between the sample and the electron beam enhances considerably the spatial resolution as compared to EBSD, allowing the characterization of ultra-fine-grained metals in the SEM. ECCI is a useful technique to image near-surface lattice defects without the necessity to expose two free surfaces as in TEM. Its relevant contributions to metallography include deformation characterization of metals, including defect visualization, and dislocation density measurements. EBSD and ECCI are mature techniques, still undergoing a continuous expansion in research and industry. Upcoming technical developments in electron sources and optics, as well as detector instrumentation and software, will likely push the border of performance in terms of spatial resolution and acquisition speed. The potential of TKD, combined with EDS, to provide crystallographic, chemical, and morphologic characterizations of nano-structured metals will surely be a valuable asset in metallurgy.     

Surface imaging using diffracted electrons

Refection electron microscopy has been applied for studying single crystal surfaces of noble metals in a conventional electron microscope using diffracted electrons for the imaging. This is equivalent to dark field imaging in transmission electron microscopy. The image contains far more contrast due to deviation from the ideal surface structure than any other surface imaging technique. A resolution of the order of 20 Å has been achieved for directions perpendicular to the incident beam. In directions parallel to the incident beam the resolution is much worse and the magnification is reduced with a factor 15 to 100 because the surface is viewed at the angle of the diffracted beam used for imaging (foreshortening). Nevertheless the achieved resolution is one to two orders of magnitude better than for other surface imaging methods. Since a correspondence can be established between image and diffraction pattern by means of selected area diffraction, the present technique should be very useful in structure analysis of surfaces.     

Strain mapping of semiconductor specimens with nm-scale resolution in a transmission electron microscope

The last few years have seen a great deal of progress in the development of transmission electron microscopy based techniques for strain mapping. New techniques have appeared such as dark field electron holography and nanobeam diffraction and better known ones such as geometrical phase analysis have been improved by using aberration corrected ultra-stable modern electron microscopes. In this paper we apply dark field electron holography, the geometrical phase analysis of high angle annular dark field scanning transmission electron microscopy images, nanobeam diffraction and precession diffraction, all performed at the state-of-the-art to five different types of semiconductor samples. These include a simple calibration structure comprising 10-nm-thick SiGe layers to benchmark the techniques. A SiGe recessed source and drain device has been examined in order to test their capabilities on 2D structures. Devices that have been strained using a nitride stressor have been examined to test the sensitivity of the different techniques when applied to systems containing low values of deformation. To test the techniques on modern semiconductors, an electrically tested device grown on a SOI wafer has been examined. Finally a GaN/AlN superlattice was tested in order to assess the different methods of measuring deformation on specimens that do not have a perfect crystalline structure. The different deformation mapping techniques have been compared to one another and the strengths and weaknesses of each are discussed.     

Performance and early applications of a versatile double aberration-corrected JEOL-2200FS FEG TEM/STEM at Aalto University

Applications relevant to carbon based nano-materials have been explored using a newly installed JEOL-2200FS field emission gun (FEG) (scanning) transmission electron microscope (S)TEM which is integrated with two CEOS aberration correctors for both the TEM image-forming and the STEM probe-forming lenses. The performance and utility of this newly commission hardware has been reviewed with a particular focus on operation at an acceleration voltage of 80 kV, thus bringing the primary electron beam voltage below the knock-on threshold for carbon materials and opening up a range of possibilities for the study of carbon-based nanostructures in the aberration-corrected electron microscope. The ability of the microscope to obtain both atomic TEM images and high-quality electron diffraction patterns from carbon nanotubes was demonstrated. The chiral structure of a double-walled carbon nanotube was determined from its diffraction pattern. The aberration corrected TEM imaging technique facilitates a unique approach to accurate determination of single-walled carbon nanotube diameters. On the other hand, the probe-corrected high angle annular dark field (HAADF) STEM imaging performance allows for the detection of single gold atoms at 80 kV and was used to study the graphite interlayer spacing in a multi-walled carbon nanotube.     

采用Si薄膜的光子计数成像系统性能的研究

在陶瓷基底上利用电子束蒸镀方法制备了Si薄膜,用作感应读出方式光子计数成像系统的电荷感应层,并研究了薄膜的结构特征和表面形态.X射线衍射(XRD)测试和场发射扫描电子显微镜(FESEM)图像表明,沉积的Si薄膜为无定形态,由于陶瓷晶界的存在,薄膜较粗糙.搭建了相应的实验系统,对比了采用不同厚度Si薄膜时系统的空间分辨率、计数率、脉冲高度分布曲线等,发现薄膜的厚度对探测器的计数率影响较大.此外,实验还对比了采用相同电阻值的Si薄膜和常用的Ge薄膜时系统的性能.研究表明,采用Si薄膜时系统的畸变较小、计数率高     

Investigating the role of microbes in mineral weathering: Nanometre-scale characterisation of the cell–mineral interface using FIB and TEM

Focused ion beam (FIB) sample preparation in combination with subsequent transmission electron microscopy (TEM) analysis are powerful tools for nanometre-scale examination of the cell–mineral interface in bio-geological samples. In this study, we used FIB-TEM to investigate the interaction between a cyanobacterium (Hassallia byssoidea) and a common sheet silicate mineral (biotite) following a laboratory-based bioweathering, incubation experiment. We discuss the FIB preparation of cross-sections of the cell mineral interface for TEM investigation. We also establish an electron fluence threshold (at 200 keV) in biotite for the transition from scanning (S)TEM electron beam induced contamination build up on the surface of biotite thin sections to mass loss, or hole-drilling within the sections. Working below this threshold fluence nanometre-scale structural and elemental information has been obtained from biotite directly underneath cyanobacterial cells incubated on the biotite for 3 months. No physical alteration of the biotite was detected by TEM imaging and diffraction with little or no elemental alteration detected by STEM–energy dispersive X-ray (EDX) elemental line-scanning or by energy filtered TEM (EF-TEM) jump ratio elemental mapping. As such we present evidence that the cyanobacterial strain of H. byssoidea did not cause any measurable alteration of biotite, within the resolution limits of the analysis techniques used, after 3 months of incubation on its surface.     

The angular dislocation parallel to a free surface. Application to a (1 1 1)Si low-angle twist boundary

The elastic displacement field of a sharply angular dislocation with its two legs parallel to a planar free surface is given in a practical analytical form. Its expression gives access, in transmission electron microscopy (TEM), to computed images of numerous interacting dislocations all located at a distance h close to the free surface. As an application, this field is used repeatedly to study, in dark-field TEM and a g(3g) diffraction mode with g{2?2?0}, the contrast of dissociated triple nodes of a low-angle twist boundary in silicon extended over a (1?1?1) plane. It is shown that free surface elastic effects can influence the contrasts of some 30° partials if h is at the nanometer scale.     

High contrast hollow-cone dark field transmission electron microscopy for nanocrystalline grain size quantification

In this paper, we describe hollow-cone dark field (HCDF) transmission electron microscopy (TEM) imaging, with a slightly convergent beam, as an improved technique that is suitable to form high contrast micrographs for nanocrystalline grain size quantification. We also examine the various factors that influence the HCDF TEM image quality, including the conditions of microscopy (alignment, focus and objective aperture size), the properties of the materials imaged (e.g., atomic number, strain, defects), and the characteristics of the TEM sample itself (e.g., thickness, ion milling artifacts). Sample preparation was found to be critical and an initial thinning by wet etching of the substrate (for thin film samples) or tripod polishing (for bulk samples), followed by low-angle ion milling was found to be the preferred approach for preparing high-quality electron transparent samples for HCDF imaging.     

The diffraction-dependence of electron damage in a high voltage electron microscope

Abstract

In a high voltage electron microscope the intense electron beam used for imaging can cause visible aggregates of point defects to form in metals in just a few minutes. The diffraction-dependence of the defect cluster production was studied experimentally in Cu and Fe using a 1000 kV electron microscope. Also, a simple method for calculating the diffraction-dependence of the atomic displacement rate was devised from multiple-beam wave-mechanical diffraction theory. The calculations indicate that the rate of point defect production should vary at most by a factor of ～1.7 with Bragg deviation in systematic diffraction cases, and that this variation should decrease rapidly with increasing depth in the crystal. The experimental observations are consistent with these predictions. In addition, the theory allows the diffraction-dependence of the displacement rate to be explained in terms of Bloch wave properties. Some new observations of the defect structures in electron-irradiated Cu and Fe are also described.     

X-ray and electron microscopy of actinide materials

Actinide materials demonstrate a wide variety of interesting physical properties in both bulk and nanoscale form. To better understand these materials, a broad array of microscopy techniques have been employed, including transmission electron microscopy (TEM), electron energy-loss spectroscopy (EELS), energy dispersive X-ray spectroscopy (EDXS), high-angle annular dark-field imaging (HAADF), scanning electron microscopy (SEM), wavelength dispersive X-ray spectroscopy (WDXS), electron back scattered diffraction (EBSD), scanning tunneling microscopy (STM), atomic force microscopy (AFM), and scanning transmission X-ray microscopy (STXM). Here these techniques will be reviewed, highlighting advances made in the physics, materials science, chemistry, and biology of actinide materials through microscopy. Construction of a spin-polarized TEM will be discussed, considering its potential for examining the nanoscale magnetic structure of actinides as well as broader materials and devices, such as those for computational magnetic memory.     

UHV-HREM and diffraction of surfaces

Characterization of the structure of surfaces is very important in order to develop a fundamental understanding of the electronic, mechanical and chemical properties of a material. While transmission electron microscopy imaging (TEM) and diffraction (TED) techniques are capable of providing surface structural information at the atomic level, such data would be suspect if obtained under conventional vacuum conditions (10^-6–10^-8 Torr). Ultrahigh vacuum (UHV) conditions are imperative during both preparation and observation of clean surfaces/interfaces. Conventional TEM techniques are very powerful for UHV-TEM investigations; however, the marriage of surface science and conventional TEM to yield an UHV-TEM is a complex task. These complexities and some of the results obtained using UHV-TEM and UHV-TED techniques for surfaces i.e. solid-vacuum interfaces will be illustrated.     

Combined field ion microscopy and transmission electron microscopy of heavy ion damage in tungsten

Abstract

A field ion microscopy (FIM) and transmission electron microscopy (TEM) investigation of radiation damage in tungsten after heavy ion bombardment has been carried out. Field ion specimens of tungsten were irradiated with 180–230 keV Xe⁺ ions. The irradiation doses were varied between 4 × 10¹¹ and 4 × 10¹² ions/cm². The irradiated specimens were examined in FIM. Experiments combining both TEM and FIM were performed in order to compare the results obtainable by these two methods. The distribution of defects visible by TEM was inhomogeneous. The influence of the imaging field in FIM on the defects visible in TEM is discussed.     

Characterization of solution-synthesized CdTe and HgTe

We report the characterization of solution-synthesized CdTe and HgTe nanocrystals by X-ray diffraction, transmission electron microscopy, and photoluminescence. Methanol solutions of sodium telluride and cadmium iodide or mercury iodide, respectively, are reacted to precipitate the nanocrystalline metal tellurides, while the sodium iodide byproduct remains in solution. The existence of crystalline CdTe, HgTe, and ternary HgCdTe compounds has been demonstrated by powder X-ray diffraction after a post-synthesis sintering process. Precipitated crystallites from this synthesis were analyzed by transmission electron microscopy, which revealed that crystal diameters can vary from approximately 1 nm to 100 nm and that crystals are stoichiometric within the detection limit of the electron microprobe technique. Narrow size ranges can be selected and investigated due to an in-situ separation process in the electron microscope. Photoluminescence is found at energies above the bulk exciton energy for CdTe and is attributed to near-band-gap recombination which is blue-shifted due to quantum confinement. Both low defect luminescence and dark field imaging suggest a high crystalline quality. A comparative characterization by photoluminescence, transmission electron microscopy, and X-ray diffraction evaluates the effects of heat treatments during and after synthesis.     

超衍射极限相干反斯托克斯拉曼散射显微成像技术中空心光束的形成

空心光束的质量是超衍射极限相干反斯托克斯拉曼散射显微成像技术中决定成像质量的一个至关重要的因素. 本文基于菲涅耳衍射理论,分析了螺旋相位片法产生空心光束的物理机理,并且模拟了不同的入射条件对产生的空心光束的影响. 模拟结果表明:波长与相位片中心波长匹配且光强呈圆对称分布的高斯光垂直入射到相位片上,当高斯光束中心与相位片中心完全对准时,可获得较理想的空心光束;入射光光强分布的圆对称性以及入射光中心与相位片中心的对准程度都会影响产生的空心光束的强度分布;同时,高斯光束小角度倾斜入射时,空心光的强度分布仍呈圆对称,却在观察面发生一定的位移;此外,入射光中心波长偏离相位片中心波长不大时,对产生的空心光束的强度分布几乎没有影响. 上述分析结果对用于超衍射相干反斯托克斯拉曼散射显微成像技术中理想空心光束的获取具有重要的指导意义. 关键词： 空心光束 超衍射极限 相干反斯托克斯拉曼散射 螺旋相位片     

Structural transformation of MoO<Subscript>3</Subscript> nanobelts into MoS<Subscript>2</Subscript> nanotubes

The structural transformation of MoO₃ nanobelts into MoS₂ nanotubes using a simple sulfur source has been reported. This transformation has been extensively investigated using electron microscopic and spectroscopic techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), electron diffraction (ED), and energy-dispersive X-ray analysis (SEM-EDAX and TEM-EDX). The method described in this report will serve as a generic route for the transformation of other oxide nanostructures into the chalcogenide nanostructures.     

Synthesis of lanthanum nickelate perovskite nanotubes by using a template-inorganic precursor

A new route to obtain metal oxide nanotubes is presented: an inorganic coordination complex precursor containing the metal ions and impregnated into alumina membrane templates yield hollow tubular nanostructures of LaNiO₃ by calcination at 600 °C as characterized by powder X-ray diffraction (XRD). Scanning electron microscopy (SEM) shows that the resulting nanotubes have 200 nm in diameter in good agreement with the template pore. Transmission electron microscopy (TEM) and dark field transmission electron microscopy (DF-TEM) show that the nanotubes with 10-20 nm walls and internal separations are composed of 3-5 nm crystals.     

Elaboration and characterization of TiO2 nanoparticles incorporated in SiO2 host matrix

Nanometer-scale TiO₂ particles have been synthesized by sol-gel method. It was incorporated in a glass-based silica aerogel. The composite was characterized by various techniques such as particle size analysis, scanning electron microscopy (SEM), atomic force microscopy (AFM), transmission electron microscopy (TEM), X-ray diffraction (XRD), infrared spectroscopy (IR) and photoluminescence (PL). The bulk glass presents a strong luminescence at wavelengths ranging from 750 to 950 nm. This PL was attributed to various non-bridging oxygen hole centers (NBOHCs) defects resulting from thermal treatment and crystallization of TiO₂ at the interface between titania nanoparticles and silica host matrix.     

Formation of Mn3O4/C core-shell nanowires and a new Mn-O phase by electron beam irradiation

Carbon shells have been formed on Mn₃O₄ nanowires under electron beam irradiation in a transmission electron microscope. The microstructure is characterized by transmission electron microscopy (TEM) imaging, electron energy-loss spectroscopy and energy-filtered imaging. Detailed TEM analysis confirms that the outer shell is composed of amorphous carbon with a thickness of 5–20 nm while the core is single crystalline Mn₃O₄. Electron beam irradiation induces the formation of the carbon shells. A new manganese oxide phase is also found by the transformation of Mn₃O₄ under the attack of the electron beam. PACS 61.82.Rx; 81.07.-b; 68.37.Lp; 79.20.Rf; 61.80.Lj     

Optimization of the preparation of GaN-based specimens with low-energy ion milling for (S)TEM

We report on optimization of electron transparent GaN based specimens for transmission electron microscopy (TEM) and scanning TEM (STEM) studies by combining focused ion beam thinning and low-energy (≤500 eV) Ar-ion milling. Energy dependent ion milling effects on GaN based structures are investigated and the quality of ion milled samples is compared with that of specimens prepared by wet chemical etching. Defects formed during ion milling lead to amorphization of the specimen. The experimental results are compared with Monte-Carlo simulations using the SRIM (stopping and range of ions in matter) software. Specimen thickness was deduced from high-angle annular dark field STEM images by normalization of measured intensities with respect to the intensity of the scanning electron probe and comparison with multislice simulations in the frozen lattice approach. The results show that the thickness of the amorphous surface layer can be successfully reduced below 1 nm by low energy ion milling, leading to a homogeneous image contrast in TEM and STEM, so that good conditions for quantitative analysis can be achieved. For an ion energy of 400 eV the thickness measurements resulted in an etching rate of about 6-8 nm/min.     

Comparison of off-axis and in-line electron holography as quantitative dopant-profiling techniques

Many different dopant-profiling techniques are available for semiconductor device characterization. However, with length scales shrinking rapidly, only transmission electron microscopy (TEM) techniques promise to fulfil the spatial resolution required for the characterization of future device generations. Here, we use three advanced TEM techniques, off-axis electron holography, Fresnel imaging (in-line electron holography) and Foucault imaging, to examine a focused ion beam-prepared silicon p–n junction device. Experiments are carried out on electrically unbiased samples and with an electrical bias applied in situ in the TEM. Simulations are matched to experimental data to allow quantitative conclusions to be drawn about the underlying electrostatic potential distributions. The off-axis electron holography and Fresnel results are compared to assess whether the techniques are consistent, and whether they can be used to provide complementary information about dopant potentials in semiconductor devices.