Thermal stability of Cu–Nb nanolamellar composites fabricated via accumulative roll bonding

In situ annealing within a neutron beam line and ex situ annealing followed by transmission electron microscopy were used to study the thermal stability of the texture, microstructure, and bi-metal interface in bulk nanolamellar Cu/Nb composites (h?=?18?nm individual layer thickness) fabricated via accumulative roll bonding, a severe plastic deformation technique. Compared to the bulk single-phase constituent materials, the nanocomposite is two orders of magnitude higher in hardness and significantly more thermally stable, e.g., no observed recrystallization in Cu at temperatures as high as 85% of the melting temperature. The nanoscale h?=?18?nm individual layer thickness is maintained up to 500°C, the lamellar structure thickens but is maintained up to 700°C, and recrystallization is suppressed even up to 900°C. With increasing temperature, the texture sharpens, and among the interfaces found in the starting material, the {112}_Cu?||?{112}_Nb interface with a Kurdjumov-Sachs orientation relationship shows the greatest thermal stability. Our results suggest that thickening of the individual layers under heat treatment coincides with thermally driven removal of energetically unfavorable bi-metal interfaces. Thus, we uncover a temperature regime that maintains the lamellar structure but alters the interface distribution such that a single, low energy, thermally stable interface prevails.     

Deformation mechanisms of ultra-thin Al layers in Al/SiC nanolaminates as a function of thickness and temperature

The mechanical properties of Al/SiC nanolaminates with layer thicknesses between 10 and 100 nm were studied by nanoindentation in the temperature range 25 to 100 °C. The strength of the Al layers as a function of the layer thickness and temperature was obtained from the hardness of the nanolaminates by an inverse methodology based on the numerical simulation of the nanoindentation tests by means of the finite element method. The room temperature yield stress of the Al layers showed a large ‘the thinner, the stronger’ effect, which depended not only on the layer thickness but also on the microstructure, which changed with the Al layer thickness. The yield stress of the Al layers at ambient temperature was compatible with a deformation mechanism controlled by the interaction of dislocations with grain boundaries for the thicker layers (>50 nm), while confined layer slip appeared to be dominant for layers below 50 nm. There was a dramatic reduction in the Al yield stress with temperature, which increased as the Al layer thickness decreased, and led to an inverse size effect at 100 °C. This behavior was compatible with plastic deformation mechanisms controlled by grain boundary and interface diffusion at 100 °C, which limit the strength of the ultra-thin Al layers.     

Grain size effect on twin density in as-deposited nanocrystalline Cu film

Here, we report the formation of twins and grain size dependence of twin density in nanocrystalline (NC) copper films fabricated by pulsed laser deposition. It is found that the percentage of grains containing twins decreases with decreasing grain size in the grain size range of 2–10?nm. Surprisingly, although the twins were formed during the deposition process without mechanical deformation, our analysis suggests that they are most likely deformation twins formed under high internal stress existing in the NC Cu films. This phenomenon may also happen in other NC metallic thin films where internal stresses are high.     

High-pressure torsion-induced grain growth and detwinning in cryomilled Cu powders

Two mechanisms for deformation-induced grain growth in nanostructured metals have been proposed, including grain rotation-induced grain coalescence and stress-coupled grain boundary (GB) migration. A study is reported in which significant grain growth occurred from an average grain size of 46?nm to 90?nm during high pressure torsion (HPT) of cryomilled nanocrystalline Cu powders. Careful microstructural examination ascertained that grain rotation-induced grain coalescence is mainly responsible for the grain growth during HPT. Furthermore, a grain size dependence of the grain growth mechanisms was uncovered: grain rotation and grain coalescence dominate at nanocrystalline grain sizes, whereas stress-coupled GB migration prevails at ultrafine grain sizes. In addition, detwinning of the preexisting deformation twins was observed during HPT of the cryomilled Cu powders. The mechanism of detwinning for deformation twins was proposed to be similar to that for growth twins.     

Transmission electron microscopy investigation of the atomic structure of interfaces in nanoscale Cu–Nb multilayers

Multilayers of Cu–Nb have been grown on a Nb seed layer on a Si (100) substrate using a magnetron sputtering technique. The bilayer period (Λ) was varied from 10 to 2.4 nm. Cross-sectional transmission electron microscopy (XTEM) and high-resolution TEM (HRTEM) were used to study the detailed structure as a function of the bilayer period. Although the majority of the structures conformed to a Kurdjumov–Sachs (K–S) orientation relationship between the Cu and Nb layers, the structures exhibit considerable spatial variation. In some local regions, a Nishiyama–Wasserman (N–W) orientation relationship was found. In addition, considerable distortions were observed in both the Cu and Nb regions close to the interface. Using both HRTEM imaging and fast Fourier transform (FFT) of HRTEM images, early stage of the fcc to bcc transition in Cu was detected. The results suggest that, in multilayer structures, the detailed structure of the interface and large local distortions may play an important role in interface-controlled plasticity.     

Microstructures and strengthening mechanisms of Cu/Ni/W nanolayered composites

Cu/Ni/W nanolayered composites with individual layer thickness ranging from 5?nm to 300?nm were prepared by a magnetron sputtering system. Microstructures and strength of the nanolayered composites were investigated by using the nanoindentation method combined with theoretical analysis. Microstructure characterization revealed that the Cu/Ni/W composite consists of a typical Cu/Ni coherent interface and Cu/W and Ni/W incoherent interfaces. Cu/Ni/W composites have an ultrahigh strength and a large strengthening ability compared with bi-constituent Cu–X (X?=?Ni, W, Au, Ag, Cr, Nb, etc.) nanolayered composites. Summarizing the present results and those reported in the literature, we systematically analyze the origin of the ultrahigh strength and its length scale dependence by taking into account the constituent layer properties, layer scales and heterogeneous layer/layer interface characteristics, including lattice and modulus mismatch as well as interface structure.     

Dislocations in Fe-3% Si alloy single crystals deformed at a higher rate

The method of etching dislocations is used to study the distribution of dislocations and twins in Fe-3% Si alloy single crystals prepared from the melt after plastic deformation with higher speed. The crystals are deformed by twinning in the 〈111〉 directions along the {112} planes and by slip in the 〈111〉 directions along the {110} planes. The results prove that the dislocations causing plastic deformation move in the {110} planes during both fast and slow deformation. The difference in the slip surfaces during fast and slow deformation is explained by the different number of cross slips per unit dislocation path.     

On the role of weak interfaces in blocking slip in nanoscale layered composites

Layered composites of Cu/Nb achieve very high strength levels when the individual layer thicknesses are 1–10?nm, attributable to the interfaces acting as barriers to slip. Atomistic models of Cu/Nb bilayers were used to explore the origins of this resistance. The models clearly show that dislocations placed near an interface experience an attraction toward the interface, regardless of the sign of the Burgers vector or the material in which it is placed. This attraction is caused by shear of the interface induced by the stress field of the dislocation. Furthermore, the dislocation, upon reaching the interface, is absorbed by it in the sense that the core spreads within the interface. We develop a model, using a fractional dislocation approach, which provides an estimate of the strength of the attraction as a function of distance from the interface and also the dependence of the interaction on the type of dislocation. A screw dislocation is much more effective in shearing the interface, and the resulting attractive forces on screws are larger than for edge dislocations.     

Nb-Cu多层膜超导体临界温度的计算

对于Nb-Cu多层膜超导体临界温度T_cns的无调节参数数值计算表明,在充分考虑多层膜体系的周期性特点之后,在层厚d>30?的范围内邻近效应的理论和实验符合较好。计算结果和实验的比较还表明:T_cns-d关系中存在阻尼振荡行为;界面电子结构可能只在d<30?的范围内对T_cns有明显的影响,并且强异质界面对Nb的(NV)有加强作用。 关键词：     

Modeling texture evolution during rolling of a Cu–Nb multilayered system

A polycrystal plasticity model is proposed to predict the unique rolling texture of Cu/Nb nanostructured multilayers. At this length scale, the model accounts for the interface between Cu and Nb layers by computing the aggregate response of composite grains using a viscoplastic self–consistent scheme. Each composite grain is divided into Cu and Nb crystals with the interface parallel to the rolling plane, and compatibility and equilibrium are enforced across the interface. A latent hardening effect is introduced to account for the interaction between glide and interface dislocations. The latter are accumulated during slip transmission. This unconventional hardening confines the movement of glide dislocations by promoting symmetry of slip activities. Consequently, it slows development of the rolling texture for Cu/Nb nanolayers, and partially preserves the initial interface orientation defined by the Kurdjumov–Sachs relationship.     

Closed and open-ended stacking fault tetrahedra formation along the interfaces of Cu–Al nanolayered metals

Stacking fault tetrahedra (SFTs) are volume defects that typically form by the clustering of vacancies in face-centred cubic (FCC) metals. Here, we report a dislocation-based mechanism of SFT formation initiated from the semi-coherent interfaces of Cu–Al nanoscale multilayered metals subjected to out-of-plane tension. Our molecular dynamics simulations show that Shockley partials are first emitted into the Cu interlayers from the dissociated misfit dislocations along the Cu–Al interface and interact to form SFTs above the triangular intrinsic stacking faults along the interface. Under further deformation, Shockley partials are also emitted into the Al interlayers and interact to form SFTs above the triangular FCC planes along the interface. The resulting dislocation structure comprises closed SFTs within the Cu interlayers which are tied across the Cu–Al interfaces to open-ended SFTs within the Al interlayers. This unique plastic deformation mechanism results in considerable strain hardening of the Cu–Al nanolayered metal, which achieves its highest tensile strength at a critical interlayer thickness of ~4 nm corresponding to the highest possible density of complete SFTs within the nanolayer structure.     

Characterization of twinning in electrodeposited Ni–Mn alloys

Twinning is ubiquitous in electroplated metals. Here, we identify and discuss unique aspects of twinning found in electrodeposited Ni–Mn alloys. Previous reports concluded that the twin boundaries effectively refine the grain size, which enhances mechanical strength. Quantitative measurements from transmission electron microscopy (TEM) images show that the relative boundary length in the as-plated microstructure primarily comprises twin interfaces. Detailed TEM characterization reveals a range of length scales associated with twinning beginning with colonies (～1000?nm) down to the width of individual twins, which is typically <50?nm. We also consider the connection between the crystallographic texture of the electrodeposit and the orientation of the twin planes with respect to the plating direction. The Ni–Mn alloy deposits in this work possess a {110}-fiber texture. While twinning can occur on {111} planes either perpendicular or oblique to the plating direction in {110}-oriented grains, plan-view TEM images show that twins form primarily on those planes parallel to the plating direction. Therefore, grains enclosed by twins and multiply twinned particles are produced. Another important consequence of a high twin density is the formation of large numbers of twin-related junctions. We measure an area density of twin junctions that is comparable to the density of dislocations in a heavily cold-worked metal.     

一种非连续纳米氧化层自旋阀的显微结构研究

利用高分辨电子显微学方法(HREM)研究了纳米氧化层镜面反射自旋阀多层结构Ta(35nm)Ni80Fe20(2nm)Ir17Mn83(6nm)Co90Fe10(15nm)NOL1Co90Fe10(2nm)Cu(22nm)Co90Fe10(15nm)NOL2Ta(3nm).该自旋阀的巨磁电阻(GMR)效应高达15%,较无此镜面反射纳米氧化层(NOL)的自旋阀提高近1倍,同时交换偏置场亦有所增强.高分辨显微结构分析表明,介于钉扎层与被钉扎层之间的氧化层(NOL1)并未完全氧化,即除氧化过程生成的CoFe氧化物 关键词： 自旋阀 纳米氧化层 高分辨电子显微学 巨磁电阻效应     

Investigation and simulation of the structural and electronic properties of LiF:Mg,LiF:Cu,LiF:P nano-layer dosimeters

In this study, electronic structure of lithium fluoride thin films in pure state and doped with magnesium (Mg), copper (Cu) and phosphorus (P) impurities was studied using WIEN2K Code. The structural and electronic properties of two LiF thin films with 1.61 and 4.05?nm thicknesses were studied and compared. Results show that the distance of atoms in the surface and central layers of pure LiF are 1.975 and 2.03?nm, respectively. Electronic density of the valence band around the surface atoms is greater than that around middle atoms of the supercell. The band gap of bulk LiF is 9?eV. But, in the case of thin films, it is reduced to 2?eV. Electronic and hole-traps were not observed in composition of LiF thin films doped with Mg and P with 1.61 and 4.05?nm thickness and in fact, metallic properties were observed. When Cu atoms were doped in composition of an LiF thin film, the thin film was converted to semiconductor.     

Nb3Sn复合超导体晶粒生长机制

本文研究了Nb/固态Cu-Sn和Nb/液态Cu-Sn界面上Nb₃Sn晶粒的生长。实验表明:固态-固态界面上生长的晶粒尺寸虽小(约0.1μm),但Nb₃Sn晶粒的长大仍符合通常的固态晶粒长大规律;固态-液态界面上生长的Nb₃Sn分成两层,靠近Nb的内层晶粒细小,排列致密,外层晶粒粗大,分布零散,后者是前者经过溶解/沉积过程引起的,晶体形貌大多数呈菱形十二面体,部分呈正交平行六面体,说明Nb₃Sn的{110},{100}面     

Magnetization-orientation dependence of the superconducting transition temperature in the ferromagnet-superconductor-ferromagnet system: CuNi/Nb/CuNi

The superconducting critical temperature (T(c)) of ferromagnet-superconductor-ferromagnet systems has been predicted to exhibit a dependence on the magnetization orientation of the ferromagnetic layers such that T(AP)(c)>T(P)(c) for parallel (P) and antiparallel (AP) configurations of the two ferromagnetic layers. We have grown CuNi/Nb/CuNi films via magnetron sputtering and confirmed the theoretical prediction by measuring the resistance of the system as a function of temperature and magnetic field. We find an approximately 25% resistance drop occurs near T(c) in Cu0.47Ni0.53(5 nm)/Nb(18)/CuNi(5) when the two CuNi layers change their magnetization directions from parallel to antiparallel, whereas there is no corresponding resistance change in the normal state.     

Photoluminescence of polycrystalline CuIn0.5Ga0.5Te2 thin films grown by flash evaporation

Polycrystalline CuIn_0.5Ga_0.5Te₂ films were deposited by flash evaporation from ingot prepared by reacting, in stoichiometric proportions, high purity Cu, In, Ga and Te elements in vacuum sealed quartz. The as-obtained films were characterized by X – ray diffraction (XRD), transmission electron microscopy (TEM) combined with energy dispersive spectroscopy (EDS). XRD and TEM results showed that the layer has a chalcopyrite-type structure, predominantly oriented along (112) planes, with lattice parameters a?=?0.61?nm and c?=?1.22?nm. The optical properties in the near - infrared and visible range 600–2400?nm have been studied. The analysis of absorption coefficient yielded an energy gap value of 1.27?eV. Photoluminescence analysis of as-grown sample shows two main emission peaks located at 0.87 and 1.19?eV at 4?K.     

Deformation and annealing behaviour of a low carbon high Mn TWIP steel microalloyed with Ti

ABSTRACT

A low carbon high Mn, Ti microalloyed dual phase TWIP steel has been processed through cold rolling and annealing. X-ray diffraction reveals the maximum austenite (≈92%) in HRACST sample whereas, the 50CD sample shows 29% ferrite. The microstructure of HRAC and HRACST samples reveal austenite grains with annealing twins and deformation induced ferrite (DIF). The higher amount of DIF along with deformation twins form during cold deformation. Annealing at 500°C shows recovery, whereas at 700°C shows partial recrystallisation and at 900°C reveals almost full recrystallisation. TEM microstructures of the 900°C for 30?min samples reveal annealing twins with TiC particle. Strong Brass {110}<112> and Goss{110}<001> texture components are observed in HRAC, HRACST and 50CD samples. Goss Twin (GT) {113}<332> and Copper Twin (Cu-T) {552}<115> components are observed in 50CD sample. Addition of Ti results in an average grain size of 20?μm. Maximum YS (1176?MPa) and UTS (1283?MPa) values with the lowest ductility of 11% have been obtained for the 50CD sample which is related to the formation of extensive deformation twin and a higher fraction of DIF. 700°C-30?min and 700°C-60?min samples show an increase in ductility (23% and 34%, respectively) with a marginal decrease in tensile strength (1054?MPa). Annealing at 900°C shows ductility restoration up to 60% with higher tensile strength compared to HRACST sample. Ductile fracture of HRAC and HRACST samples transform to brittle fracture in the 50CD sample. Annealing at 900°C for 30?min shows ductile fracture with some (Fe, Mn)S and TiC particles.     

Interface dislocation structures at the onset of coherency loss in nanoscale Ni–Cu bilayer films

We have performed a transmission electron microscopy study, using weak beam imaging, of the interface dislocation arrays that form initially at the (001) Ni–Cu interface during coherency loss. Interface dislocations were absent in the 2.5?nm Ni/100?nm Cu bilayers, but were present in the 3.0?nm Ni samples, indicating that the critical Ni film thickness for coherency loss is between 2.5 and 3?nm. The key features of the interface dislocation structure at the onset of coherency loss are: (i) the majority of interface dislocations are 60° dislocations, presumably formed by glide of threading dislocations in the coherently stressed Ni layer, and have Burgers vector in the {111} glide plane; (ii) the interface contained approximately 5% Lomer edge dislocations, with Burgers vector in the {001} interface plane, and an occasional Shockley partial dislocation and (iii) isolated segments of interface dislocations terminating at the surface are regularly observed. Possible mechanisms that lead to these dislocation configurations at the interface are discussed. This experimental study shows that near the critical thickness, accumulation of interface dislocations occurs in a somewhat stochastic fashion with favourable regions where coherency is first lost.