Evidence for insulator–metal transition in amorphous chalcogenide Se–Ge–Te films

The temperature dependence of the dc conductivity and thermoelectric power was determined for five different amorphous chalcogenide Se–Ge–Te films, with Ge?=?3.0–22?at.%, Se?=?0–97?at.% and Te?=?0–97?at.%. The films were prepared by thermal evaporation of GeSe₄, GeTe₄ and GeSe₂Te₂ quenched bulk materials. Values of the activation energy calculated from the temperature dependence of both electrical conductivity and thermoelectric power showed a decrease with increasing Ge content in the Se–Ge films as well as with replacement of Te for Se in the Se–Ge–Te films. The results showed an Anderson transition, with the conductivity showing insulating behaviour on the Ge–Se side to metallic behaviour at the binary composition Ge–Te. The radius of localization was obtained for the different compositions investigated. The wave function associated with the charge carriers at the composition Ge_3.3Te_96.7 is non-localized. A minimum metallic conductivity of 237?±?5?(Ω?cm)^?1 was found.     

Electrical switching behavior of bulk As–Te–Si glasses: composition dependence and topological effects

The current–voltage characteristics and electrical switching behavior of bulk As₃₀Te_70-xSi_x (2x22) and As₄₀Te_60-xSi_x (2x17) glasses have been investigated over a wide range of compositions. The glasses studied have been found to exhibit a current-controlled negative-resistance behavior and memory switching. Further, the switching voltage (V_t) is found to increase linearly with sample thickness in the range of 0.15 mm to 0.45 mm, and it decreases linearly with temperature (300–353 K). It is also observed that the variation of the switching voltage V_t of As–Te–Si glasses exhibits a sharp slope change at an average coordination number r=2.46 (for both tie lines), which is associated with the rigidity percolation in the system. Further, a minimum is seen in the switching voltage V_t at an average coordination number r=2.66, which is likely to be the chemical threshold of the system. PACS 71.55.Jv; 72.20.Ht; 72.80.Ng; 73.61.Jc; 77.80.Fm; 78.66.Jg     

Types of surface modulation in a Ge–Si(111) heterosystem

Three types of elastic modulation in atomic layers of epitaxial Ge films on the surface of Si(111) observed in scanning tunnel microscopy are discussed. Two types of modulation are associated with misfit dislocations accumulating at the interface. Modulation of the third type arises on the surfaces of dislocation-free pseudomorphic films and could be due to the presence on a Si substrate surface of two-dimensional silicon islands with a height of three atomic bilayers and lateral dimensions of 15–20 nm. Measured bending values Δh for the third type of modulation (Δh ≤ 0.1 nm) agree with data calculated within the theory of elasticity     

Elastic stress fields caused by a dislocation in Ge x Si1−x /Si film-substrate system

The elastic stress fields caused by a dislocation in Ge_xSi_(1-x) epitaxial layer on Si substrate are investigated in this work. Based on the previous results in an anisotropic bimaterial system,the image method is further developed to determine the stress field of a dislocation in the film-substrate system under coupled condition. The film-substrate system is firstly transformed into a bimaterial system by distributing image dislocation densities on the position of the free surface. Then,the unknown image dislocation densities are solved by using boundary conditions,i.e.,traction free conditions on the free surface. Numerical simulation focuses on the Ge0.1Si0.9/Si film-substrate system. The effects of layer thickness,position of the dislocation and crystallographic orientation on the stress fields are discussed. Results reveal that both the stresses σxx,σxz at the free surface and the stress σxy,σyy,σyz on the interface are influenced by the layer thickness,but the former is stronger. In contrast to the weak dependence of stress field on the crystallographic orientation the stress field was strongly affected by dislocation position. The stress fields both in the film-substrate system and bimaterial system are plotted.     

Si–Si bond as a deep trap for electrons and holes in silicon nitride

A two-stage model of the capture of electrons and holes in traps in amorphous silicon nitride Si₃N₄ has been proposed. The electronic structure of a “Si–Si bond” intrinsic defect in Si₃N₄ has been calculated in the tight-binding approximation without fitting parameters. The properties of the Si–Si bond such as a giant cross section for capture of electrons and holes and a giant lifetime of trapped carriers have been explained. It has been shown that the Si–Si bond in the neutral state gives shallow levels near the bottom of the conduction band and the top of the valence band, which have a large cross section for capture. The capture of an electron or a hole on this bond is accompanied by the shift of shallow levels by 1.4–1.5 eV to the band gap owing to the polaron effect and a change in the localization region of valence electrons of atoms of the Si–Si bond. The calculations have been proposed with a new method for parameterizing the matrix elements of the tightbinding Hamiltonian taking into account a change in the localization region of valence electrons of an isolated atom incorporated into a solid.     

Quantitative description of the T1 formation kinetics in an Al–Cu–Li alloy using differential scanning calorimetry,small-angle X-ray scattering and transmission electron microscopy

The object of the present study is to design a methodology to follow the kinetics of T₁ precipitation, in an AA2198 alloy, in terms of precipitate size, morphology (thickness, diameter) and volume fraction, during a two-temperature isothermal heat treatment. We used in situ small-angle X-ray scattering (SAXS) as a way to measure the evolution of the T₁ mean thickness and diameter during the heat treatment. Transmission electron microscopy (TEM) was then performed in order to calibrate these evolutions. Furthermore, we demonstrate that the volume fraction evolution can be described successfully using a simple analysis of the differential scanning calorimetry (DSC) thermograms. The latter was calibrated by selected observations in high angular annular dark field scanning transmission electron microscopy (HAADF-STEM). Microstructure evolution during DSC heating ramps was analysed using in situ SAXS: the T₁ phase transformation is found to consist in a two-step thickening process explained by two consecutive diffusion stages. The enthalpy of formation of the T₁ phase is deduced from the DSC measurements.     

Improvement of Electrical Properties of the Ge2Sb2Te5 Film by Doping Si for Phase-Change Random Access Memory

Si-doped Ge2Sb2Te5 films have been prepared by dc magnetron co-sputtering with Ge2Sb2Te5 and Si targets. The addition of Si in the Ge2Sb2Te5 film results in the increase of both crystallization temperature and phasetransition temperature from face-centred-cubic （fcc） phase to hexagonal （hex） phase. The resistivity of the Ge2Sb2Te5 film shows a significant increase with the Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460℃ annealing increases from 1 to 11 mΩ.cm and dynamic resistance increase from 64 to 99Ω compared to the undoped Ge2Sb2Te5 film. This is very helpful to writing current reduction of phase-change random access memory.     

Enhanced red fluorescence in Sr2Si1−xGexO4:Eu3+ phosphors by the substitution of Si by Ge for white light emitting diodes

Eu³⁺-doped Sr₂Si_1?xGe_xO₄ (x=0–1) phosphors have been prepared by the high temperature solid-state reaction method. The luminescent properties of these phosphors were investigated. Red fluorescence of Eu³⁺ is enhanced gradually in the samples with increasing substitution of Si by Ge upon the excitation of 393 nm light. The intensity is increased by 50% with full substitution of Si by Ge. These results are originated from the structural changes and the phonon energy reduction in the samples due to the substitution of Si by Ge. The CIE chromaticity coordinates of the phosphors vary slightly around (0.62, 0.37) and all are in the red color region. The results indicate that these phosphors could be promising red phosphors for white light emitting diodes.     

Atomistic details of precipitates in lean Al–Mg–Si alloys with trace additions of Ag and Ge studied by HAADF-STEM and DFT

Abstract

Bonding energies and volume misfits for alloying elements and vacancies in multicomponent Al–Mg–Si alloys have been calculated using density functional theory (DFT). A detailed atomic scale analysis has been done for characteristic precipitate structures, using high-angle annular dark-field scanning transmission electron microscopy. Two new stacking configurations of the important strengthening phase β′′ were discovered in the Ge-added alloy. All three stacking variations were found to be energetically favourable to form from DFT calculations. The second stacking configuration, β₂′′, contains vacated columns in its unit cell, consequently requiring less solute to create the same volume fraction of precipitate needles. DFT suggests a lower formation enthalpy per atom for β₂′′ when Si is exchanged with Ge. In the alloy containing Ag additions, a new Q’/C-like local configuration containing Ag instead of Cu was discovered, also this phase was deemed energetically favourable from DFT.     

Evidence for a metallic–like state in the T=0 K phase diagram of a high temperature superconductor

We examine the effects of a phenomenological pseudogap on the T=0 K phase diagram of a high temperature superconductor within a self-consistent model which exhibits a d-wave pairing symmetry. At the mean-field level the presence of a pseudogap in the normal phase of the high temperature superconductor is proved to be essential for the existence of a metallic–like state in the density versus interaction phase diagram. In the small density limit, at high attractive interaction, bosonic–like degrees of freedom are likely to emerge. Our result should be relevant for underdoped high temperature superconductors, where there is a strong evidence for the presence of a pseudogap in the excitation spectrum of the normal state quasiparticles.     

Evidence of a core–shell structure in the antiferromagnetic La0.2Ce0.8CrO3 nanoparticles by neutron scattering

We report the evidence of a core?Cshell structure in the antiferromagnetic La_0.2Ce_0.8CrO₃ nanoparticles by using a combination of neutron diffraction, polarized neutron small angle scattering (SANSPOL), and dc magnetization techniques. The neutron diffraction study establishes that the present nanoparticles are antiferromagnetic in nature. The magnetic scattering in the SANSPOL study arises from the shell part of the nanoparticles due to the disordered surface spins. The analysis of the SANSPOL data shows that these nanoparticles have a mean core diameter of 12.3±1.1?nm, and a shell thickness of 2.8±0.4?nm, giving a core?Cshell structure with an antiferromagnetic core, and a shell with a net magnetic moment under an applied magnetic field.     

Study of the KNO<Subscript>3</Subscript>–Al<Subscript>2</Subscript>O<Subscript>3</Subscript> system by differential scanning calorimetry

The structural and the thermodynamic properties of potassium nitrate KNO₃ and its composites with nanosized aluminum oxide Al₂O₃ have been studied by differential scanning calorimetry. It has been found that an amorphous phase forms in composites (1–x)KNO_3–xAl₂O₃. The thermal effect corresponding to this phase has been observed at 316°C. It has been found that the phase transition heats of potassium nitrate decreased as the aluminum oxide fraction increased.     

Optical spin generated by a soliton pulse in an add–drop filter for optoelectronic and spintronic use

A new concept of an optical spin generation using bright and dark soliton conversion behaviors within a modified optical add–drop filter known as PANDA ring resonator is proposed. The orthogonal solitons can be formed within the system and detected simultaneously at the output ports. Under the resonant condition, the dark and bright soliton pair corresponding to the left-hand and right-hand rotating solitons (photons) can be generated. When a soliton is absorbed by an object, an angular momentum of either +? or ?? is imparted to the object, in which two possible spin states known as optoelectronic(soliton) spins are exhibited. Furthermore, an array of soliton spins, i.e. particles can be generated and detected by the proposed system, which can be used to form large scale spin generation.     

Influence of charge carriers on magnetic order in lightly doped manganites, detected by μSR: Evidence for a superparamagnetic transition to the antiferromagnetic state

We detected two spontaneous precession frequencies in antiferromagnetic pure LaMnO₃, the end member of different families of charge-doped manganites. The muon site and local field orientation are identified for one frequency, which provides a measure of the staggered magnetization. We present additional zero and longitudinal field muon relaxation data on an LaMnO_3.045 sample in which a new regime appears above an intermediate temperatureT*, where regions of magnetic order coexist with domains of fluctuating moments. These results are discussed in terms of nucleation of the ordered phase in a superparamagnetic matrix.     

Measurement of absorption spectra for atmospheric methane by a lidar system with tunable emission wavelength in the range 1.41–4.24 μm

We have developed, built, and tested an automated differential lidar system for measuring low concentrations of atmospheric gases, based on an optical parametric oscillator tunable in the near IR region. We have calculated the spectral shift of the relative intensities of the individual lines in the ν₃ absorption band of methane. In comparing the measured and calculated spectra, we did not observe any shifts in the ν₃ absorption band of methane. At the same time, in the experimental spectra we observe broadening of the Q branch and the individual lines of the P branch. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 76, No. 2, pp. 285–290, March–April, 2009.     

Design of Si–SiO<Subscript>2</Subscript> phoxonic crystal having defect layer for simultaneous sensing of biodiesel in a binary mixture of diesel through optical and acoustic waves

The potentiality of a phoxonic crystal for sensing of biodiesel in a binary mixture of diesel and biodiesel is theoretically investigated. Using the transfer matrix method, the transmission of acoustic and optical waves through a periodic one-dimensional crystal of Si–SiO₂ layers is studied. A pass band is created in the band gap region by introducing a cavity in the considered one-dimensional crystal structure. This pass band can also be considered as a defect mode, and it is found that its position is highly dependent on mole concentration of binary mixture of biodiesel and diesel present in the cavity. The sensitivity of the sensor for a binary mixture of biodiesel and diesel in the cavity with various mole concentrations is estimated. Simulated results provide a valuable guidance for designing a phoxonic crystal sensor consisting of a defect layer.     

Generation of Intense Near and Mid-Infrared Femtosecond Radiation (1.2–2.4 μm) with the Use of the Broadband Parametric Down-Conversion in a Type-II BBO Crystal Pumped by a Ti:Sapphire Laser and Its Application for the Generation of Terahertz Radiation in Organic Crystals

JETP Letters - A two-stage optical parametric amplifier is fabricated on the basis of type-II BBO crystals pumped by the intense radiation of a Ti:sapphire laser. Femtosecond radiation tunable from...