Dislocation content of geometrically necessary boundaries aligned with slip planes in rolled aluminium

Previous studies have revealed that dislocation structures in metals with medium-to-high stacking fault energy, depend on the grain orientation and therefore on the slip systems. In the present work, the dislocations in eight slip-plane-aligned geometrically necessary boundaries (GNBs) in three grains of near 45° ND rotated cube orientation in lightly rolled pure aluminium are characterized in great detail using transmission electron microscopy. Dislocations with all six Burgers vectors of the ½?1?1?0? type expected for fcc crystals were observed but dislocations from the four slip systems expected active dominate. The dislocations predicted inactive are primarily attributed to dislocation reactions in the boundary. Two main types of dislocation networks in the boundaries were identified: (1) a hexagonal network of the three dislocations in the slip plane with which the boundary was aligned; two of these come from the active slip systems, the third is attributed to dislocation reactions (2) a network of three dislocations from both of the active slip planes; two of these react to form Lomer locks. The results indicate a systematic boundary formation process for the GNBs. Redundant dislocations are not observed in significant densities.     

Low-Energy Dislocation Structure (LEDS) character of dislocation boundaries aligned with slip planes in rolled aluminium

For the specific slip geometry of two sets of coplanar systems (a total of four systems) in fcc metals, the range of dislocation networks in boundaries aligned with one of the two active slip planes is predicted from the Frank equation for boundaries free of long-range elastic stresses. Detailed comparison with experimental data for eight dislocation boundaries in cold-rolled aluminium grains of the 45° ND rotated Cube orientation is conducted. It is concluded that the boundaries are Low-Energy Dislocation Structures, which are in good agreement with the Frank equation while also lowering the energy by dislocation reactions. Cross slip plays a role in the boundary formation process.     

On the fluorescence of C_60 at room temperature

The fluorescence properties of C 60 in different organic solvents have been investigated at room temperature. Three fluorescence emission centers are discovered and ascribed to different aggregations of C 60 in solvent. A series of blue fluorescence peaks centered at 440 nm derive from C 60 nanoparticles; a distinctive yellow-green fluorescence band in 575 nm region arises from the aggregates of C 60 nanoparticles; a more informative salmon fluorescence band around 700 nm originates from C 60 microcrystals....     

Synthesis and tailoring of GaN nanocrystals at room temperature by RF magnetron sputtering

We report here the synthesis of hexagonal GaN nanocrystals on p-silicon substrates by Radio-Frequency (RF) magnetron sputtering without substrate heating or by post-deposition annealing treatment. GaN nanocrystals are synthesized and tailored as a function of RF power at constant Ar and N₂ flow rates (working pressure). The observed reduction in grain sizes as a function of RF power has been correlated with an increase in compressive strain. The effect of RF power on crystallite orientation has been determined by diffraction intensities using the degree of c-axis orientation. Atomic force microscopy shows uniform lateral nanocrystal sizes with spherical in shape by insignificant difference in Root-Mean-Square (RMS) roughness values for all the deposited thin films. Transmission electron microscope and field emission-scanning electron microscope studies have been performed to understand the surface morphologies and grain sizes. Thus, tailoring the size of the nanocrystals has been discussed by correlating RF powers, working pressures and cathode voltages on lattice vibrations.     

Grain size effects on microstructural stability and creep behaviour of nanotwinned Ni free-standing foils at room temperature

Creep tests were performed on the high stacking fault energy (SFE) nanotwinned (NT) Ni free-standing foils with nearly the same twin thickness at room temperature (RT) to investigate the effects of grain size and loading rate on their microstructural stability and creep behaviour. The grain growth mediated by the twinning/detwinning mechanism at low applied stresses (<800 MPa) and grain refinement via the detwinning mechanism at high applied stresses (>800 MPa) were uncovered in the present NT-Ni foils during RT creep, both of which are attributed to the interactions between dislocations and boundaries. It appears that a higher initial dislocation density leads to a faster primary creep strain rate and a slower steady-state creep strain rate. Unlike the non-twinned metals in which grain growth often enhances the creep strain rate, the twinning/detwinning-mediated grain growth process unexpectedly lowers the steady-state creep strain rate, whereas the detwinning-mediated grain refinement process accelerates the creep strain rate in the studied NT-Ni foils. A modified phase-mixture model combined with Arrhenius laws is put forward to predict the scaling behaviour between the creep strain rate and the applied stress, which also predicts the transition from grain growth-reduced to grain refinement-enhanced steady-state creep strain rate at a critical applied stress. Our findings not only provide deeper insights into the grain size effect on the mechanical behaviour of nanostructured metals with high SFE, but also benefit the microstructure sensitive design of NT metallic materials.     

Poly(ethylene oxide)-alkali metal-silver halide salt systems with high ionic conductivity at room temperature

The electrical conductivity of poly(ethylene oxide)-MAg₄I₅ (M = Li, K, Rb) compounds has been measured for M : O ratios between 0.1 and 1.0. For P(EO)₁KAg₄I₅ the conductivity is 2 × 10⁻³ ω⁻¹ cm⁻¹ at room temperature and the activation energy is 0.16 eV.     

Pressure-induced two-color photoluminescence in MnF(2) at room temperature

A novel two-color photoluminescence (PL) is found in MnF(2) at room temperature under high pressure. Contrary to low-temperature PL, PL at room temperature is unusual in transition-metal concentrated materials like MnF(2), since the deexcitation process at room temperature is fully governed by energy transfer to nonradiative centers. We show that room-temperature PL in MnF(2) originates from two distinct Mn(2+) emissions in the high-pressure cotunnite phase. The electronic structure and the excited-state dynamics are investigated by time-resolved emission and excitation spectroscopy at high pressure.     

Effect of growth defects on microwave properties in epitaxial Ba0.5Sr0.5TiO3 thin films grown on (001) MgO by pulsed laser deposition

Ba_0.5Sr_0.5TiO₃ (BSTO) films have been grown heteroepitaxially on (001) MgO substrates by pulsed laser deposition (PLD) to fabricate microwave phase shifters for the wide frequency range 45 MHz–50 GHz. Both as-grown and ex situ annealed films have a cube on cube epitaxial relationship with ?100?BSTO//?100?MgO. Threading dislocations are the dominant defects, mostly with Burgers vectors b = ?101?. Growth at 10^?1 mbar oxygen pressure, compared to 10^?4 mbar, resulted in significantly better properties. Ex situ annealing of the film grown at 0.1 mbar resulted in a reduction of 40% in threading dislocation density and a 40% increase in dielectric tunability.     

Hypersonic wave anomalies in Cs3H(SeO4)2 at the transitions above room temperature

The elastic properties of Cs3H ( SeO4 ) ₂ are investigated by Brillouin spectroscopy in the temperature range 20-220 covering the two transitions III II and II I occurring at and , respectively. Phase I is known to be a protonic conductive one. Discontinuities of elastic constants are generally observed at both transitions, implying first orderness. In phases II and I, a slight broadening of the Brillouin lines is detected. The results are discussed in comparison with compounds of the families XHSeO4 (X = NH4, Rb and Cs) and CsH2BO4 (B = As and P) which also undergo a transition to a superionic phase. In the conductive phase, it appears that the lattice anharmonicity is weaker in Cs3H ( SeO4 ) ₂ than in these other compounds. Received 16 October 1998     

Studies on thin films of TiO2 for resistance-based sensing of ethanol vapor at room temperature

We investigate the gas sensing properties of TiO₂ thin films prepared by spin coating. The presence of anatase and rutile phases in the sample was confirmed by powder X-Ray diffraction study. The thin film was characterized by FE-SEM and EDAX. The TiO₂ thin films were found to have good sensitivity towards ethanol compared to other gases. The sensing studies revealed the ethanol sensing properties of the thin film at room temperature even at lower concentrations. The response and selectivity of the film were also discussed in detail.     

Growth and properties of KLu(WO4)2, and novel ytterbium and thulium lasers based on this monoclinic crystalline host

High‐quality crystals of monoclinic KLu(WO₄)₂, shortly KLuW, were grown with sizes sufficient for its characterization and substantial progress was achieved in the field of spectroscopy and laser operation with Yb³⁺‐ and Tm³⁺‐doping. We review the growth methodology for bulk KLuW and epitaxial layers, its structural, thermo‐mechanical, and optical properties, the Yb³⁺ and Tm³⁺ spectroscopy, and present laser results obtained in several operational regimes both with Ti:sapphire and direct diode laser pumping using InGaAs and AlGaAs diodes near 980 and 800 nm, respectively. The slope efficiencies with respect to the absorbed pump power achieved with continuous‐wave (CW) bulk and epitaxial Yb:KLuW lasers under Ti:sapphire laser pumping were ≈ 57 and ≈ 66%, respectively. Output powers as high as 3.28 W were obtained with diode pumping in a simple two‐mirror cavity where the slope efficiency with respect to the incident pump power reached ≈ 78%. Passively Q‐switched laser operation of bulk Yb:KLuW was realized with a Cr:YAG saturable absorber resulting in oscillation at ≈ 1031 nm with a repetition rate of 28 kHz and simultaneous Raman conversion to ≈ 1138 nm with maximum energies of 32.4 and 14.4 μJ, respectively. The corresponding pulse durations were 1.41 and 0.71 ns. Passive mode‐locking by a semiconductor saturable absorber mirror (SESAM) produced bandwidth‐limited pulses with duration of 81 fs (1046 nm, 95 MHz) and 114 fs (1030 nm, 101 MHz) for bulk and epitaxial Yb:KLuW lasers, respectively. Slope efficiency as high as 69% with respect to the absorbed power and an output power of 4 W at 1950 nm were achieved with a diode‐pumped Tm:KLuW laser. The slope efficiency reached with an epitaxial Tm:KLuW laser under Ti:sapphire laser pumping was 64 %. The tunability achieved with bulk and epitaxial Tm:KLuW lasers extended from 1800 to 1987 nm and from 1894 to 2039 nm, respectively.     

室温下(Ga,Mn)As中载流子的自旋弛豫特性

运用飞秒时间分辨抽运-探测克尔光谱技术,研究了室温下退火及未退火(Ga,Mn)As的载流子自旋弛豫的激发能量密度依赖性,发现电子自旋弛豫时间随激发能量密度增加而增大,而在同一激发能量密度下,退火样品比未退火样品具有更短的载流子复合时间、电子自旋弛豫时间和更大的克尔转角,显示DP机理是室温下(Ga,Mn)As的电子自旋弛豫的主导机理.退火(Ga,Mn)As的超快克尔增强效应显示其在超高速全光自旋开关方面的潜在应用价值,也为(Ga,Mn)As铁磁性起源的p-d交换机理提供了证据. 关键词： (Ga Mn)As稀磁半导体 时间分辨克尔光谱 电子自旋弛豫 DP机理     

Methanol decomposition on Ru(0001) during continuous exposure at room temperature

Using infrared vibrational spectroscopy, we have studied the chemical reactivity of methanol on Ru(0001) under experimental conditions closer to real catalysts than those existing in most of the literature. We have performed experiments in the pressure range from 10^? 8 to 10^? 3 mbar, exposing the surface to large gas doses at room temperature. We show the co-existence of two active paths: one involves the complete dehydrogenation of methanol into CO, the other one promotes the scission of the CO bond of methanol, leaving carbon and oxygen on the surface, which, after large exposures, deactivate the surface towards a further evolution of the molecular adlayer. In no case, the presence of stable reaction intermediates is detected along either of the two reaction paths. We have compared the behavior of flat ruthenium surfaces with those having a variable concentration of controlled surface defects. Surface defects, mainly steps, seem to accelerate the rate of both reaction paths, but do not activate any new reaction path or stabilize intermediates.     

A neutron diffraction study of ferroelectric PbHAsO4 at room temperature

A single-crystal neutron-diffraction structural study of PbHAsO₄ in its ferroelectric phase at room temperature (24°C) is presented as part of an investigation of a family of monetites. The crystal structure of PbHAsO₄, and its phase transition mechanism are discussed. Comparison of the crystal structures of PbHPO₄ and PbHAsO₄ reveals that these two ferroelectrics are isomorphous. The role of protons in structural phase transition of PbHAsO₄ is also discussed.     

Electrical transport properties of consolidated ZnSe quantum dots at and above room temperature

Here we report a comprehensive study on the prevailing conduction mechanism and dielectric relaxation behavior of consolidated Zinc Selenide quantum dots in the frequency range of 1 kHz ≤ f ≤ 1.5 MHz and in the temperature range of 298K ≤ T ≤ 573 K. The ac conductivity increases either with increase in temperature or with increase in frequency, which is explained by the Jonscher Power law. At higher temperatures, correlated barrier hopping is found to be the prevalent charge transport mechanism with a maximum barrier height of 0.88 eV. The dielectric constant of the sample is found to exhibit weak temperature dependence. DC conductivity study reveals the semiconducting nature of the sample and it is discussed in the light of polaron hopping conduction. From the impedance spectroscopic study, role of the grains and grain boundaries in the overall electrical transport properties have been elucidated by considering an electrical equivalent circuit (composed of resistances and constant phase elements). Electric modulus study reveals non-Debye responses of the sample in the experimental range.     

Theoretical analysis of ARUPS of a Si(100) surface at room temperature

ARUPS spectra of a Si(100) surface with disorder perpendicular to the dimer row are studied by the tight-binding method for the ensemble of surface buckled dimers. We assume order along the row. Results of ARUPS experiment on the surface at room temperature agree qualitatively with calculated results for disordered structure in which the distance to the next buckled dimer along the row and the height of the buckled dimer change alternately along the row. Peaks of two branches observed in a recent experiment at room temperature appear distinctly in calculated results as long as the short range order among the rows is not weak. The intensity of the two branches is very small compared to the other for conventional structure of the surface.     

The reaction of acetylene with Ni(100) and Ni(110) surfaces at room temperature

Ultraviolet photoemission spectroscopy using hv = 21.2 eV and filtered 40.8 eV radiation as well as temperature programmed thermal desorption spectroscopy are used to investigate the chemical reaction of acetylene with Ni(100) and Ni(110) surfaces at room temperature. Striking crystallographic effects and several coexisting phases are observed and found to be coverage and temperature dependent. A methodology is described and used to predict the relative energy levels for a variety of adsorbed hydrocarbon fragments on Ni surfaces. Such levels together with the thermal desorption spectra are used to identify the observed species. In particular, CH and CCH species are isolated on Ni(100) and Ni(110) surfaces, respectively, via low temperature adsorption and subsequent pulsed sample warming experiments. The room temperature adsorption phases are deduced using these ionization levels together with those of chemisorbcd acetylene, atomic hydrogen and carbon. At room temperature on Ni(100), H, C, CH and C₂H₂ species form together below 2 L exposure while CH species form thereafter, up to a saturation exposure of ~10 L. On Ni(110), H and CCH species form below 1.5 L exposure followed by the formation of CH₂ and likely CH species. The relative stabilities of these species at elevated temperatures is: C₂H₂ < CCH ? CH < CH₂. A model for the bonding of acetylene and its reaction to form CCH species on Ni(110) is proposed.     

Rapid growth of nanocrystalline CuInS2 thin films in alkaline medium at room temperature

Layer-by-layer (LbL) deposition of CuInS₂ (CIS) thin films at room temperature (25 °C) from alkaline CuSO₄ + In₂(SO₄)₃ and Na₂S precursor solutions was reported. The method allowed self-limited growth of CIS films with nanocrystalline structure and composed of densely packed nanometer-sized grains. The as-deposited CIS film was 250 nm thick and composed of closely packed particles of 20-30 nm in diameter. The alkaline cationic precursor solution was obtained by dissolving CuSO₄ and InSO₄ in deionized water with a appropriate amount of hydrazine monohydrate (H-H) and 2,2′,2″-nitrilotriethanol (TEA). CIS films were annealed at 200 °C for 2 h and effect of annealing on structural, optical, and surface morphological properties was thoroughly investigated by means of X-ray diffraction, scanning electron microscopy, transmission electron microscopy, UV-vis spectrometer, C-V, and water contact angle techniques, respectively.     

超分子组合流体室温磷光现象（Ⅱ）—醇对环糊精／碘代乙基联 …

在外部重原子微拢剂溴代环己烷存在下，β－ＣＤ／碘代乙基联苯体系可发射一定强度的室温磷光信号，若丁醇作为第四组分存在，则能显著提高体系的室温磷光发射强度。研究了该体系室温磷光发射的适宜条件和多种醇、不同环糊精及其衍生物的影响。认为β－ＣＤ／碘代乙基联苯／溴代环乙烷／丁醇体系属于一种超分子组合的发光体系，醇的作用属典型的分子调控作用。β－ＣＤ／碘代乙基联苯／溴代环乙烷形成主、客三元包结物，可醇则利用其