γ射线辐照对a-SiC:H薄膜结构与特性的影响

 采用射频（13.56 MHz）反应溅射方法制备a-SiC:H 薄膜，并将其在空气中进行高能γ射线(平均为1.25 MeV)辐照，5个样品的吸收剂量分别为0，2×10⁴，4×10⁴，6×10⁴，8×10⁴ Gy。采用拉曼及红外光谱对薄膜的结构进行表征,得到了其结构与特性的变化规律。研究与分析表明：随样品吸收剂量的增加，陷入空穴中的电子会被激发，a-SiC:H薄膜中的SiC成份增加，电阻率变小，数量级为105Ω·cm；薄膜存在结晶化的趋势,其主要原因在于由Si－O－Si键断裂而产生的Si取代膜中C－C键中的C而形成晶态SiC，在此过程中出现了Si－O－Si键及a-SiC:H的减少，晶态SiC的增加。经γ射线辐照后薄膜的氢含量降低，折射率从5.19增大到5.53，辐照后薄膜的透过率均低于原膜的透过率。在500~2 300 cm^-1(对应波长为20.00~5.29 μm)波段内，a-SiC:H薄膜存在一定的增透作用。     

Distribution of deep levels in Si:Au by spectral analysis of deep-level transient spectroscopy

-l eV and Δσ=1.4×10^-15 cm²) around their mean values (E₀=0.47 eV and σ₀=5.0×10^-15 cm²). No broadening for the other levels is observed in the emission rate spectrum. Accepted: 13 October 1997     

Electron irradiation of ion-implanted n-type Si-SiO2 structures studied by deep-level transient spectroscopy

2 structures implanted with 50-keV boron ions is studied by deep-level transient spectroscopy (DLTS) measurements. The DLTS spectra of ion-implanted samples exhibit one peak which corresponds to a deep level located in the forbidden gap of the silicon matrix at E_c-0.40 eV below the conducting band edge. New additional shallower levels are found in the spectra following bombardment by high-energy electrons, the peak intensity being dependent on the irradiation dose. The corresponding activation energy of the created defects, the density of the traps, and the electron-capture cross sections are evaluated. Received: 27 October 1997/Accepted: 8 December 1997     

CdS/CdTe薄膜太阳电池的深能级瞬态谱和光致发光研究

用深能级瞬态谱和光致发光研究了无背接触层的CdS/CdTe薄膜太阳电池的杂质分布和深能级中心.得到了净掺杂浓度在器件中的分布.确定了两个能级位置分别在E_V+0365 eV和E_V+0282 eV的深中心,它们的浓度分别为167×10¹² cm^-3和386×10¹¹ cm^-2,俘获截面分别为143×10^-14cm²和153×10^-16cm².它们来源于以化学杂质形式存在的Au和（或）Te_Cd^-复合体,或与氩氧气氛下沉积CdTe时的氧原子相关. 关键词： 深能级瞬态谱 光致发光 CdS/CdTe太阳电池     

Charge transient spectroscopy measurements of GaAs metal-insulator-semiconductor structures

The Au/Pd/Ti-SiO₂-(n)GaAs structures with and without (NH₄)₂S_x treated gallium arsenide surface, previously analysed by impedance spectroscopy (IS) method, have been investigated using charge transient spectroscopy (QTS) technique. The isothermal QTS spectra of MIS structures kept at room temperature under set of quiescent biases have been recorded in response to both negative and positive pulses of fixed small amplitudes. Two types of charge relaxation characterized by time constant values have been evidenced. The attempt to compare QTS results with ones obtained by impedance spectroscopy method has been presented.     

Characterization of vacancy-related defects introduced into silicon during heat treatment by deep-level transient spectroscopy and gamma-ray diffraction techniques

Vacancy-related defects introduced into n-Si during annealing or aluminium diffusion at high temperature (1000–1250°C) have been studied. Different ambients (argon, nitrogen, vacuum and chlorine-containing atmosphere) were used to create a vacancy supersaturation during heat treatments. Three deep-level centers whose formation is governed by the presence of vacancies have been identified. They were characterized by the following temperature dependences of the thermal emission rate:e3 = 7.92 × 10⁷ T ² × exp(– 0.455/kT),e ₅ = 2.64 × 10⁶ T ² × exp( – 0.266/kT),e ₇ = 7.26 × 10⁶ T ² × exp (– 0.192/kT). The influence of different factors, such as heat-treatment conditions, concentration of oxygen and doping level in initial crystals, on center formation was studied. An asymmetric diffuse-ray scattering was observed near the surface of a crystal irradiated by thermal neutrons and annealed in a chlorine-containing atmosphere. This scattering is related to the formation of structural defects of the vacancy type. In the same region of the crystal, the concentration of the E7 center was one order of magnitude higher than that of other deep-level centers. Comparison of the-ray diffraction and deeplevel transient spectroscopy (DLTS) data suggests that the formation of the center occurs under the conditions of Si supersaturation with vacancies.     

a-SiC:H薄膜的中子辐照研究

用射频（13.56MHz）反应溅射法制备了a-SiC:H 薄膜,并将制得的薄膜采用高能中子（14MeV）进行辐照。采用电阻率、Raman谱及红外光谱对薄膜的结构与特性变化规律进行了表征。分析结果表明：所得a-SiC:H薄膜中存在多余的非晶态碳。随着中子辐照剂量的增加,a-SiC:H薄膜中SP-2C=C键增加,即其中的碳存在类石墨化的趋势。中子辐照后薄膜的电阻率的略微减小现象,可用缺陷对载流子的捕获模型进行解释。     

a-SiC:H薄膜的中子辐照研究

 用射频（13.56MHz）反应溅射法制备了a-SiC:H 薄膜，并将制得的薄膜采用高能中子（14MeV）进行辐照。采用电阻率、Raman谱及红外光谱对薄膜的结构与特性变化规律进行了表征。分析结果表明：所得a-SiC:H薄膜中存在多余的非晶态碳。随着中子辐照剂量的增加，a-SiC:H薄膜中SP-2C=C键增加，即其中的碳存在类石墨化的趋势。中子辐照后薄膜的电阻率的略微减小现象，可用缺陷对载流子的捕获模型进行解释。     

Limitations of interface sharpness in a-Si:H/a-SiC:H multilayers

The goal of this work is to study the sharpness of interfaces in amorphous silicon based compositional multilayers (superlattices) by a number of different techniques and to discuss their limitations. From monitoring plasma transients during glow discharge deposition of a-Si:H/a-SiC:H multilayers, a lower limit of 3 Å for interface sharpness is estimated. Transmission electron microscopy (TEM) images yield an upper limit of 5–10 Å. These images directly show the increase in undulation from the substrate towards the film surface. From the comparison of simulated X-ray diffraction (XRD) spectra with measurements the interface sharpness is found to be between 5 and 8 Å. Using a series of multilayers with increasing number of interfaces, structural characteristics of the interfacial region can be extracted. For example, infrared absorption spectroscopy (FTIR) and elastic recoil detection (ERD) lead to an estimate of 1.1 × 10¹⁴ cm^-2 additional hydrogen atoms per single interface.     

Hydrogen induced voids in hydrogenated amorphous silicon carbon (a-SiC:H): Results of effusion and diffusion studies

The void formation in Si-rich a-SiC:H films deposited with dc magnetron sputtering is studied by effusion measurements of hydrogen and of implanted rare gases and secondary ion mass spectrometry (SIMS). Rare gas atoms were incorporated into the material by ion implantation. The results suggest a widening of the network openings with increasing alloy concentration. However, the void formation is mainly attributed not to an increase in carbon concentration but to an increase in hydrogen incorporation.     

On the applicability of deep-level transient spectroscopy for the investigation of deep centers in silicon created by fast neutron irradiation

Deep-Level Transient Spectroscopy (DLTS) measurements were carried out on silicon p⁺nn⁺ diodes before and after irradiation with fast neutrons at room temperature with fluences 5.5×10¹¹ and 1.0×10¹² n/cm². It was found out, that all preexisting defects decreased their amplitudes during irradiation, while only one defect, identified as a single-charged divacancy, increased in amplitude. An interpretation is proposed in terms of the cluster model, and the applicability of the DLTS is discussed.     

掺Er/Pr的GaN薄膜深能级的研究

利用深能级瞬态谱(DLTS)、傅里叶变换红外光谱(FT-IR)对GaN以及GaN掺Er/Pr的样品进行了 电学和光学特性分析.研究发现未掺杂的GaN样品只在导带下0.270eV处有一个深能级；GaN注 入Er经900℃,30min退火后的样品出现了四个深能级，能级位置位于导带下0.300 eV,0.188 eV,0.600 eV 和0.410 eV；GaN注入Pr经1050℃,30min退火后的样品同样出现了四个深能级 ，能级位置位于导带下0.280 eV,0.190 eV,0.610 eV 和0.390 eV；对每一个深能级的来源 进行了讨论.光谱研究表明，掺Er的GaN样品经900℃,30min退火后，可以观察到Er的1538nm 处的发光，而且对能量输运和发光过程进行了讨论. 关键词： GaN Er Pr 深能级     

Electronic properties and deep level transient spectroscopy of CdS/CdTe thin film solar cells

It is well known that preparing temperatures and defects are highly related to deep-level impurities. In our studies, the CdTe polycrystalline films have been prepared at various temperatures by close spaced sublimation (CSS). The different preparing temperature effects on CdS/CdTe solar cells and deep-level impurities have been investigated by I--V and C--V measurements and deep level transient spectroscopy (DLTS). By comparison, less dark saturated current density, higher carrier concentration, and better photovoltaic performance are demonstrated in a 580oC sample. Also there is less deep-level impurity recombination, because the lower hole trap concentration is present in this sample. In addition, three deep levels, E_v+0.341 eV(H4), E_v+0.226 eV(H5) and E_C-0.147 eV(E3), are found in the 580oC sample, and the possible source of deep levels is analysed and discussed.     

钇掺杂钨酸铅晶体中的极化子和导纳谱

在室温至160 ℃范围内测量了掺钇钨酸铅(PWO∶Y)晶体的直流电导率,证明此时的载流子为极化子.观察到极化子由能带导电到跳跃导电转变引起的电导率极小.在此温区的交流导纳分析给出的交流电导率比直流电导率大三个数量级,说明此时的交流电导率主要是复介电常数的贡献.当样品的电导率和介电常数均随频率而变化时,从交流测量只能得到样品的总的导纳谱，而不能将其中的电导谱和介电谱分开. 关键词： 钨酸铅 电导谱 介电谱 导纳谱 极化子     

Adsorption of a tripeptide on platinum electrodes: I. Ac admittance measurements

The tripeptide Bz-Phe-Val-Arg-pNA adsorbs reversibly to platinum electrodes. We show how it is possible to determine the coverage of the tripeptide by measuring the electrode capacitance at a single frequency. The frequency dispersion of the electrode admittance fits a mathematical model with only two adjustable parameters. The model is based on a dispersion of time constants for the electrical events taking place at the electrode. Tunnelling is suggested to be a possible cause of such a dispersion.     

The analysis of structural and electronic environments of silicon network in HWCVD deposited a-SiC:H films

Hydrogenated amorphous silicon carbon alloys (a-SiC:H) films were deposited by hot wire chemical vapour deposition (HWCVD) using SiH₄ and C₂H₂ as precursor gases. a-SiC:H films were characterized by Fourier Transform Infrared (FTIR) spectroscopy, Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). Solid-state plasmon of Si network shifts from 19.2 to 20.5 eV by varying C₂H₂ flow rate from 2 to 10 sccm. Incorporation of carbon content changes the valence band structure and s orbital is more dominant than sp and p orbital with carbon incorporation.     

Laplace deep level transient spectroscopy: Embodiment and evolution

This paper is to commemorate the work of Leszek Dobaczewski¹ who devoted much of his life to the development and application of high resolution DLTS.     

“In situ” measurements of the transient photoconductivity in a-Si:H

During glow discharge deposition of a-Si:H the transient photoconductivity is measured with the time-resolved microwave conductivity method. The change of the signal with deposition time is discussed. Evidence is given that the defect density is larger in the surface layer. Analysis of the maximum signal height as a function of the film thickness gives the absorption coefficient at the excitation wavelength. Influence of the deposition temperature on the properties of the film is studied. It is found that lowering the substrate temperature yields films with a larger charge carrier decay rate.     

57Fe Mössbauer spectroscopy studies of Sr2Fe1−x Cr x Mo1−x W x O6 double perovskite compounds

Polycrystalline double perovskites Sr₂Fe_1?x Cr _x Mo_1?x W _x O₆ with x = 0, 0.05, 0.10, 0.15, 0.20, and 0.30 have been prepared by sold state reactions. A continuous decrease of the tetragonal unit cell parameters α and c with increasing x values is observed. The highest Curie temperature T _C = 426 K is recorded for the x = 0.10 compound. ⁵⁷Fe Mössbauer spectroscopy measurements indicate a non-integral electronic configuration of ～3d^5.3 for the Fe ions at the ordered double perovskite structure for x ≤ 0.20, which reaches ～3d^5.4 for x = 0.30. Fe–Mo/W anti-site and anti-phase boundary defects are observed in all samples in equal concentrations of around 3% of the total number of Fe ions in their structure.     

Transport and stability studies on high band gap a-Si:H films prepared by argon dilution

Device quality hydrogenated amorphous silicon films (a-Si:H) are deposited at a high deposition rate (4–5 Å/s) using a mixture of argon and hydrogen-diluted silane. The films exhibit good opto-electronic properties and show less degradation upon light soaking. Light-induced changes in conductivity could be annealed at much lower temperature. The presence of Ar^* and atomic hydrogen in plasma replaces the weak Si-Si bonds, which are responsible for light-induced degradation by strong Si-Si bonds. This results in the improved stability of the films.