Controlled crystallization of β-In2S3 in 65GeS2⋅25In2S3⋅10CsCl chalcohalide glass

65GeS₂?25In₂S₃?10CsCl chalcohalide glass-ceramics containing β-In₂S₃ crystallites in the glassy matrix were prepared by traditional melt-quenching and subsequent heat-treatment at a fairly low temperature (T _g +10 ^°C) for different durations. The transmission spectra show that the cut-off edge of short wavelength is red-shifted with the prolongation of annealing time, but remains an excellent transmittance in the mid-IR region. Meanwhile, its crystallization behavior was investigated systematically. The results show that the precipitation of β-In₂S₃ crystal phase is responsible for the first crystallization peak, and the second crystal phase is GeS₂, which precipitated in the interior after a heat treatment at a high temperature (T _g +70 ^°C). Furthermore, the crystallization mechanism was investigated using the non-isothermal method. The crystallization rate constant K value of 6.08×10^?4 s^?1 at 346 ^°C for the β-In₂S₃ phase is about three times larger than that of the GeS₂ phase, indicating a much easier crystallization mechanism of β-In₂S₃ phase. Therefore, it is easy to control the precipitation of sole β-In₂S₃ crystallite, and to avoid interference of the second crystal phase GeS₂.     

Chemical spray pyrolysis of β-In2S3 thin films deposited at different temperatures

In₂S₃ thin films were deposited onto indium tin oxide-coated glass substrates by chemical spray pyrolysis while keeping the substrates at different temperatures. The structures of the sprayed In₂S₃ thin films were characterized by X-ray diffraction (XFD). The quality of the thin films was determined by Raman spectroscopy. Scanning electron microscopy (SEM) and atomic force microscopy were used to explore the surface morphology and topography of the thin films, respectively. The optical band gap was determined based on optical transmission measurements. The indium sulfide phase exhibited a preferential orientation in the (0, 0, 12) crystallographic direction according to the XRD analysis. The phonon vibration modes determined by Raman spectroscopy also confirmed the presence of the In₂S₃ phase in our samples. According to SEM, the surface morphologies of the films were free of defects. The optical band gap energy varied from 2.82 eV to 2.95 eV.     

Magnetic phase transition in ɛ-In x Fe2 − x O3 nanowires

This paper reports on a study of magnetic properties of ordered arrays of ?-In _x Fe_{2 ? x} O₃ (x = 0.24) nanowires possessing a high room-temperature coercive force of 6 kOe. Lowering the temperature below 190 K brings about a sharp decrease of the coercive force and magnetization of nanowires driven by the magnetic phase transition from the ferrimagnetic into antiferromagnetic phase. The transition is accompanied by a decrease of the magnetic anisotropy constant, which accounts for the anomalous frequency dependence of the position of the maximum in the temperature dependence of dynamic magnetic susceptibility. In the low-temperature phase, a spin-flop transition in the magnetic field of 28 kOe has been observed at T = 2 K. Lines related to the high-temperature hard-magnetic and low-temperature phases have been identified in electron spin resonance spectra of the nanowires. A line lying near zero magnetic field and evolving from the nonresonant signal related to the microwave magnetoresistance of the sample has also been detected.     

二维α-In2Se2的铁电性与器件应用

铁电体具有可控的非易失电极化,在现代电子学中有着广泛的应用,例如大容量电容器、新型二极管、铁电场效应晶体管、铁电隧道结等．伴随着电子元器件的不断微型化,传统铁电体面临着极大的挑战,即在器件减薄过程中受限于临界尺寸效应,铁电性很难稳定存在于纳米乃至单原子层二维极限厚度下．鉴于二维范德华材料具有界面饱和、层间相互作用弱、易于实现二维极限厚度等特性,因此,在二维材料家族中寻找室温二维铁电性将是解决传统铁电体瓶颈的有效方法．本文将首先回顾近年来二维铁电物性研究的相关背景,并针对其中在技术应用上较为重要的α-In２Se３ 面外铁电性作详细介绍,最后总结基于二维α-In２Se３ 的铁电器件应用进展。     

IR impurity absorption in Sb2S3–GeS2(Ge2S3) chalcogenide glasses

The IR optical transmission spectra in the 4000–1000 cm⁻¹ (2.5–10 μm) region in the chalcogenide glasses (ChG) of the ternary Ge–Sb–S system of stoichiometric Sb₂S₃–GeS₂ and non-stoichiometric Sb₂S₃–Ge₂S₃ compositions are studied. The compositional dependences of the measured IR spectra connected with influence of O-, H- and C-based absorbed impurites are analyzed.     

Stability of Thin-Film Cu–As2S3 and Ag–As2S3 Structures

Technical Physics - Thin-film Cu–As2S3 and Ag–As2S3 structures obtained by successively evaporating Cu(Ag) and As2S3 in vacuum on glass substrates have been studied. Samples of these...     

Synthesis of α-In 2 Te 3 thin films from In/Te bilayer by Si ion irradiation

In this work, In/Te bilayer thin films were prepared using sequential thermal evaporation method and subsequently irradiated using swift heavy ions (SHIs) of 100 MeV silicon (Si) with different fluences (1×10¹³ to 5×10¹³/cm²). The inter-diffusion of In and Te layers was highly controlled by SHI irradiation and the In₂Te₃ formation capability was compared with that of the conventional annealing method. The structural as well as optical properties of a post-sintered SHI-irradiated In/Te bilayer were investigated using X-ray diffraction (XRD) measurements and UV–visible spectroscopy, respectively. We found that irradiated samples showed single-phase In₂Te₃ under post-annealed conditions at 150 °C unlike that prepared using the conventional thermal annealing method, which showed mixed phases under similar conditions. This confirms the effective inter-diffusion in bilayer films by SHI irradiation toward the formation of single-phase In₂Te₃. The estimated optical band gap energy was found to be 1.1±0.5 eV and strongly corroborated the XRD results. In addition, the estimated refractive index (n) value of the SHI-irradiated sample (～3.3) was higher than that of the sample obtained through the conventional annealing method (～2.8). This proves that SHI offers a highly compact nature even at low temperatures. This work has a wide scope for achieving single-phase alloyed films through bilayer mixing by SHI irradiation.     

Radiation-stimulated changes in the transmission of chalcogenide glasses of As2S3−Ge2S3

The radiative-optical properties of chalcogenide glass-like semiconductors of the As₂S₂−Ge₂S₃ system in the region of a topological 2D-3D-phase transition are investigated. It is shown that γ-irradiation of samples by an absorbed dose of 4.4 · 10⁶ Gy leads to a longwave shift of their optical-transmission edge in the spectrum. The effect observed depends on the structural type of the glasses investigated and changes considerably near the 2D-3D-phase transition. Two components of the transmission-edge shift are detected: a static component, which remains unchanged for a long time after irradiation of the samples, and a dynamic one, which gradually fades in 2–3 months. It is suggested that the microstructural mechanism of these changes is attributable to processes of coordination defect formation in the structural skeleton of the samples. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 66, pp. 657–660, September–October, 1999.     

氦原子2~3S—2~3P精密光谱研究

氦原子是最基本的多电子原子,其精密谱是十分理想的检验多电子量子电动力学计算的平台,同时也是利用原子能级结构测定精细结构常数α的理想体系,还能获得原子核结构信息.本文结合我们团队的工作,综述基于氦原子的少体原子精密光谱研究.其中,主要包括氦原子2~3P_J精细结构分裂,以及2~3S—2~3P跃迁频率测定等研究,并对相关工作的前景进行了展望.     

Inclusive γ(1S,2S,3S) photoproduction at the CEPC

Inclusive γ(1S,2S,3S) photoproduction at the future Circular-Electron-Positron-Collider(CEPC)is studied,using the non-relativistic quantum chromodynamics(NRQCD)factorization formalism.Including the contributions from both direct and resolved photons,we present different distributions for the γ(1S,2S,3S) production.Our results suggest that there will be considerable events,implying that well measurements of the T photoproduction can be performed to further study heavy quarkonium physics at electron-positron colliders,in addition to hadron colliders.This supplemental study is very important for clarifying the current situation regarding the heavy quarkonium production mechanism.     

Photodarkening in Amorphous As2S3 Thin Films

The photodarkening effect in amorphous As2S3 films is studied.The optical absorption edge shifts to a lower energy after illumination ar the bandgap light of 514.5nm wavelength by an argon laser.The shift in well annealed films can be recovered by annealing at 180℃ for 1 h but in un-annealed films it is irreversible.In addition,it was found that the magnitude of photodarkening ΔE increased with the increase of illumination light intensity and illumination time.The reversibility of photodarkening in amorphous As2S3 films can be applied in optical memories.     

二维铁电材料α-In2Se3 表面分子束外延生长Pb 纳米岛的STM 研究

铁电材料拥有自发电极化, 不同的极化方向会对异质结的电子结构产生可逆的和非易失性的影响. 本工作采用分子束外延技术在二维铁电材料α-In2Se3 衬底上成功制备了 Pb 纳米岛构建 Pb/α-In2Se3 超导铁电异质结,并通过扫描隧道显微镜表征了其表面原子结构与电子结构. 进一步的扫描隧道谱测量显示不同层厚 Pb 岛的量子阱态消失, 并且我们在4.5 K 的温度下没有观察到超导能隙, 表明铁电衬底会影响 Pb 岛的电子结构, 甚至其超导特性. 这些发现为理解铁电衬底对超导性的影响提供了参考, 并为调控低维量子材料中的电子结构及超导性提供了新的思路.     

自旋S=3/2和S=2 Blume-Capel模型相变的Monte Carlo研究

利用计算机MonteCarlo模拟,研究自旋S=3/2和S=2Blume-Capel模型的相图。与最近刚发展起来的适用于研究S>1的关联有效场相比较,得出如下结论:对于S=3/2和S=2,关联有效场过高地估计了它们的相变温度对于S=3/2的相图,除了有二级相变线外,还发现了一级相变线对于S=2,关联有效场同样过高地估计了三临界点的值。 关键词：     

Effect of in situ post-deposition annealing on the formation of α-In2Se3 thin films grown by elemental evaporation

Stoichiometric polycrystalline In₂Se₃ thin films have been grown by elemental evaporation on both glass and quartz substrates. The compositions are examined by DAN fluorimetry and X-ray photoelectron spectroscopy (XPS). Structure of the films are characterized by X-ray diffraction. The structure of this -form of thin films have been determined to be hexagonal. Optimization of the preparative conditions employed for elemental evaporation, helped in preparing monophasic films by the suppression of other phases to a very minor extent. Influence of annealing conditions on the stoichiometry of the films are investigated in detail.     

ВЛИЯНИЕ СОДЕРЖАНИЯ К ИСЛОРОДА НА ЭЛЕКТРИЧЕСКИЕ И ТЕ РМОЭЛЕКТРИЧЕСКИЕ СВОЙСТВА ТРОЙНОЙ СИС ТЕМЫ Вi2Те3−x Sе x

, Bi₂Te_3–x Se _x . , , . , , . .

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Influence of oxygen content on electric and thermoelectric properties of ternary system Bi₂Te_3–x Se _x

A study is made of the influence of oxygen, contained in the semi-conducting system Bi₂Te_3–x Sé _x , on the electric and thermoelectric properties. It is shown that the addition of oxygen to the prepared samples Bi₂Te_2.4Se_0.6 causes a decrease in electric conductivity while the thermoelectric force remains unchanged. This influence is connected with a decrease in the mobility of the electrons but their concentration is not influenced by the presence of oxygen. Conclusions are reached as to the influence of oxygen on the efficiency of the conversion of thermal energy into electric energy and vice versa.

     

Bi2S3纳米复合材料的非线性光学性质

利用单光束 Z扫描技术 ,在波长为 1 .0 64μm、脉宽为 38ps条件下测定了不同热处理条件下表面包覆纳米 Bi2 S3 掺杂有机改性硅酸盐材料的三阶光学非线性。结果发现室温下自然干燥的样品和在 N2 气氛下 1 50℃加热处理 2小时后的样品的三阶光学非线性极化系数分别为5.8× 1 0 -1 3 esu和 3.7× 1 0 -1 2 esu。后者的三阶光学非线性极化系数比前者几乎大一个数量级。显然 ,适当的热处理能增强样品的三阶光学非线性。对此现象进行了分析和讨论。     

Identification of the 3s 2 3p 2 3 P 1,2 — 3s3p 3 5 S 2 0 intercombination transition in siliconlike Ni14+

The³P1, 2^{? 5}S ₂ ^o intercombination lines in Ni¹⁴⁺ have been identified in the EUV spectrum emitted by foil-excited Ni ion beams. The wavelengths are close to the theoretically predicted values. The relative intensities of the lines confirm the predicted branching ratios. In a most recent paper Ellis and Martinson [1] give predicted wavelengths and transition rates for the 3s²3p^{2 3}P_1,2 — 3s3p^{3 5}S ₂ ^o , intercombination transition in siliconlike ions with 16≤Z≤28. The data were obtained theoretically (and compared with other theoretical data by Huang [2]) but adjusted to match the known wavelengths of this transition in the first three ions of the sequence and the finestructure intervals of the³P state which are known for a few more ionization stages.     

GeS2-Ga2S3-KCl系统玻璃的拉曼光谱研究

对GeS2-Ga2S3-KCl准三元系统玻璃3个系列样品的室温拉曼谱进行了系统的探测和分析。根据准二元系统GeS2-KCl和Ga2S-KCl的熔融淬冷产物的观察和拉曼谱的分析，得出了在GeS2-Ga2S3-KCl系统玻璃中仅Ga2S和KCl发生了化学反应并产生了新结构单元GaS3/2Cl的结论。根据系列Ⅰ和Ⅲ拉曼谱的演变证实了引入的K^ 离子是以氯原子为最近邻配位且仅形成单壳层结构。根据K^ 离子对结构单元GaS3/2Cl和亚结构单元Ga2S4Cl2影响的分析，成功地解释了GeS2-Ga2S3-KCl准三元系统玻璃中的拉曼谱演变。     

V族元素掺杂的单层二维铁电α-In2Se3中的带隙异常增大现象

基于第一性原理密度泛函理论计算, 我们探索了 V 族元素(P,As 和Sb) 掺杂的单层二维铁电α-In2Se3 的电子结构. 由于本征的α-In2Se3 中存在两个不等价的In 原子层,V 族元素掺杂在不同的In 原子层会表现出不同的能带结构, 对于带隙变化尤为明显. 当掺杂元素位于α-In2Se3 的四面体配位的In 原子层时, 其带隙相比于本征的单层α-In2Se3 的带隙明显增大, 这与通常半导体或绝缘体中杂质掺杂的物理图像相反. 利用α-In2Se3 的铁电特性, V族元素掺杂的单层α-In2Se3 的带隙可以通过施加外电场翻转α-In2Se3 电极化的方向来调控. 这项工作为在二维材料中构建具有不同电子性质的非易失双态提供了一种实际有效的方法.     

掺稀土的Y_2O_3、La_2O_3和Y_2O_2S粉末层的电致发光

掺三价稀土离子的场致发光荧光体发射铣线状光谱,它是(4f)电子组态内跃迁的特征,光谱范围从红到兰。这类荧光体之所以引起人们的兴趣,是因为有可能将它们应用于彩色平板显示器中去。已经报道过一些掺稀土的ZnS粉末的电致发光的研究工