共查询到1条相似文献,搜索用时 0 毫秒
1.
Tobias Sontheimer Alexander Schnegg Simon Steffens Florian Ruske Daniel Amkreutz Klaus Lips Bernd Rech 《固体物理学:研究快报》2013,7(11):959-962
We investigate the characteristics of intra‐grain and grain boundary defects in polycrystalline Si films, by employing quantitative electron paramagnetic resonance measurements on liquid phase crystallized layers with an average grain size of 200 µm and tailored solid phase crystallized Si layers with similar intra‐grain morphology but systematically varied grain sizes between 0.25 µm and 1 µm. The defect characteristics are found to be composed of two distinctive g ‐values of g = 2.0055 and 2.0032, which are attributed to grain boundary defects and intra‐grain defects, respectively. Additional hydrogenation leads to a reduction of the overall defect concentration, while a rapid thermal annealing process primarily heals intra‐grain defects.