Electronic band alignment in AlGaN/GaN high electron-mobility transistors investigated using scanning photocurrent microscopy

The band alignment in AlGaN/GaN HEMT devices was investigated using scanning photocurrent microscopy (SPCM) with UV and visible light sources. The polarity of the SPCM on the conduction channel exhibited a switching behavior from p-type to n-type response as the gate bias was increased. The flat-band voltage, which was higher than the DC turn-on voltage, indicates that an ohmic metallic contact was formed for electron transport. We obtained the band offset between the conduction band and the metal Fermi level, which yielded a value of 2.1 eV on average.     

A broadband self-powered UV photodetector of aβ-Ga2O3/γ-CuI p–n junction

The symmetric Ti/Au bi-layer point electrodes have been successfully patterned on theβ-Ga;O;films which are prepared by metal–organic chemical vapor deposition(MOCVD)and theγ-Cu I films which are prepared by spin-coating.The fabricated heterojunction has a large open circuit voltage(Voc)of 0.69 V,desired for achieving self-powered operation of a photodetector.Irradiated by 254-nm ultraviolet(UV)light,when the bias voltage is-5 V,the dark current(Idark)of the device is 0.47 p A,the photocurrent(Iphoto)is-50.93 n A,and the photo-to-dark current ratio(Iphoto/Idark)reaches about 1.08×10;.The device has a stable and fast response speed in different wavelengths,the rise time(τr)and decay time(τd)are 0.762 s and 1.741 s under 254-nm UV light illumination,respectively.While theτr andτd are 10.709 s and7.241 s under 365-nm UV light illumination,respectively.The time-dependent(I–t)response(photocurrent in the order of10-10 A)can be clearly distinguished at a small light intensity of 1μW·cm;.The internal physical mechanism affecting the device performances is discussed by the band diagram and charge carrier transfer theory.     

Sensitization of ZnO photoconductivity by chemical modification of surface states

Surface States on ZnO have been investigated through their effect on photoconductivity. Low energy photons (0·7 ～ 1·5 eV) are found to induce a feeble photocurrent in ZnO which is attributable to the direct electron injection from surface levels to the conduction band. A definite correlation has been found between the i.r. induced photocurrent and the intrinsic or the dye sensitized photocurrent excited by UV or visible radiation. It is proposed that phthalic anhydride on ZnO modifies the distribution of surface levels, by a chemical interaction with chemisorbed oxygen. Surface levels originating in chemisorbed oxygen ions are transformed by phthalic anhydride into new levels which are shallower but thermally more stable. These traps are found to enhance the photoconductivity of ZnO. The chemical nature of them and the mechanism of sensitization are discussed.     

Light-induced metastable state in doping-modulated amorphous silicon superlattices

Photo-induced decrease in conductance after long light exposure has been observed for hydrogenated amorphous silicon (a-Si:H) npnp . doping-modulated superlattices showing large persistent photoconductivity (PPC). The initial increase in PPC is taken over by the decrease even to the negative PPC after long illumination. This light-induced, metastable conductance can be recovered completely by 160°C annealing, which is independent of exposure time. In particular, the metastable defects created in the p-layers are found to be annealed out at 100°C. The subband gap light exposure on the a-Si:H npnp. multilayers showing n-type conduction gives rise to the increase of conductance. On the contrary, the conductance of the multilayers having p-channel conduction decreases by IR exposure. These results strongly suggest the creation and annealing of dangling bonds by light-soaking and annealing in doping-modulated superlattices.     

Persistent Photoconductivity in electron-irradiated ZnO bulk single crystals: Evaluation of the metastable conductive state by the dual light illumination

Persistent Photoconductivity (PPC) in 30 MeV electron-irradiated n-type ZnO single crystals is studied under the dual light illumination (DLI: the infrared light excitation after the blue illumination). Below 160 K, the remarkable reduction in PPC is observed by the subsequent infrared illumination, suggesting the release of electrons from the perturbed-host state (PHS) as a metastable conductive state to the nonconductive state ( and/or ) via the higher unoccupied states inside the conduction band. Above 160 K, the slight increase in photocurrent is observed by the subsequent illumination, suggesting the photoexcitation of electrons not relevant to the PHS. These results depend on the electron concentration in the PHS.     

Specific features of photo-and electrical conduction in manganese germanium garnets

The specific features of photo-and electrical conduction in manganese germanium garnet crystals are investigated in the temperature range 4.2–370 K for the first time. Under exposure of samples with ohmic contacts to visible light, the photocurrent in these samples is observed only at high temperatures. The characteristic times of the photocurrent rise differ from those of photocurrent relaxation after the light is switched off. The inference is made that the photo-and electrical conduction is determined by the electrical recharging of manganese ions. The generation and transport of charge carriers are controlled by centers with electrical inhomogeneities and shallow attachment levels.     

Production of photocurrent due to intermediate-to-conduction-band transitions: a demonstration of a key operating principle of the intermediate-band solar cell

We present intermediate-band solar cells manufactured using quantum dot technology that show for the first time the production of photocurrent when two sub-band-gap energy photons are absorbed simultaneously. One photon produces an optical transition from the intermediate-band to the conduction band while the second pumps an electron from the valence band to the intermediate-band. The detection of this two-photon absorption process is essential to verify the principles of operation of the intermediate-band solar cell. The phenomenon is the cornerstone physical principle that ultimately allows the production of photocurrent in a solar cell by below band gap photon absorption, without degradation of its output voltage.     

Observation of persistent photoconductivity in flower shaped PbS dendrite structures

We report the observation of persistent photoconductivity (PPC) in flower shaped PbS dendrites grown by the hydrothermal method. Potential fluctuations, due to the presence of various confinement regimes in the branches of dendrites, and surface traps, are likely responsible for the PPC observed here. We also observed photocurrent quenching and decreased dark current in the PPC below 40 K, due to the presence of a metastable state, whereas positive PPC was observed in the temperature region 40–220 K. Dark conductivity measurements, time constant parameters obtained from the stretched exponential fittings of PPC, also showed the metastable state related transition around 50 K.     

Persistent photoconductivity in ZnO nanostructures induced by surface oxygen vacancy

ZnO nanowall networks grown on SiO₂/Si substrate were found to exhibit persistent photoconductivity (PPC). The relaxation rate of the persistent photocurrent is enhanced by a higher oxygen level in the ambient suggesting that PPC is closely related to the ZnO surface. Surface modification with hydrogen peroxide can significantly reduce the PPC relaxation time, implying that surface oxygen deficiency is responsible for the effect. The transition between the neutral and the metastable singly ionized states of the surface oxygen vacancy is suggested to account for the phenomenon and it is supported by the temperature and wavelength dependence of the PPC. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Photoelectric spectroscopy of oxide states with MOS structures atT=79 K

AtT=79 K illumination effects with visible and UV light on the drain current were studied forn-channel enhancement-type MOS transistors. The results show that the response of photoelectric measurements is due to electron excitation from oxide states into the silicon surface layer (positive changes of drain current). The oxide states lying near the bottom of the silicon dioxide conduction band are distributed in energy. Oxide states having captured a hole can be discharged by electrons excited from the silicon conduction or valence band (negative changes of drain current) in combination with a tunneling process.     

Infrared absorption in SiGe/Si multiple quantum wells

Infrared absorption has been used to investigate the subband structures in SiGe/Si quantum wells. The quantum wells are prepared using RRH/VLP-CVD and consist of 20 periods of and 60 periods of . The good periodical and interface sharpness of the SiGe/Si quantum wells have been shown by Auger Electron Spectroscopy (AES). The absorption peaks due to transitions between the hole subbands and the conduction band have been observed in infrared absorption spectra. The transverse photocurrent spectrum parallel to the growth plane have also shown absorption peaks due to transitions between the heavy and light hole band states and the conduction band states in quantum wells.     

不对称菁染料敏化纳米TiO2的光生电流过程

用光电化学方法研究了不对称菁类染料敏化TiO2 纳米结构电极的光电转换过程 .结果表明 ,该染料的电子激发态能级位置与TiO2 纳米粒子导带边位置匹配较好 ,光激发染料后 ,其激发态电子可以注入到TiO2 纳米多孔膜的导带 ,从而使TiO2 纳米结构电极的吸收光谱和光电流谱红移至可见光区 ,其IPCE(Incidentphoton to electronconversionefficiency)值最高可达 84.3 % .并进一步结合现场紫外 可见吸收光谱研究了外加电势对激发态染料往TiO2 纳米多孔膜注入电子过程的影响     

Photocurrent spectroscopy of indirect transitions in Ge/Si multilayer quantum dots at room temperature

Lateral photoconductivity spectra of multilayer Ge/Si heterostructures with Ge quantum dots were studied in the work proposed at room temperature. The photocurrent with minimal energy 0.48-0.56 eV that is smaller than Ge band gap was observed from such structures at the geometry of waveguide excitation. Generation of the photocurrent with the limit energy 0.48-0.56 eV was explained by spatially indirect electron transitions from heavy hole states of SiGe valence band into Δ₂-valley of the conduction band of Si surrounding. It was found out that the limit energy of such transitions decreased, as the number of SiGe quantum dot layers increased.     

Photoconduction of natural cinnabar (α-HgS)

The photoconductivity measurements presented in this paper permit us to reveal a sensitizing process in mercury sulphide (α-HgS) which is common to a number of II–VI compounds. The excitation spectra of the photocurrent as well as the results obtained in terms of excitation density and temperature allow us to locate the slow recombination center at 165 meV from the valence band. The ratio of capture cross sections for holes and electrons for this center is around 10⁵. Experiments on photoresponse to a cut off of the excitation show that, in the temperature range corresponding to the quenching of the photocurrent, the recombination process of free carriers is close to the bimolecular. However, the influence on our results of an electron trap located at 50 meV from the conduction band is pointed out.     

High sensitive and ultrafast UV photodetector based on ZrO_2 single crystals

The fast-response ultraviolet (UV) photoelectric effect in ZrO2 single crystals with interdigitated electrodes has been investigated experimentally at room temperature. The photovoltage of ZrO2 single crystals exhibits a linear dependence on applied bias and light power density. The photocurrent responsivity to the UV light with a wavelength of 253.65 nm is 9.8 mA/W. For the photovoltaic pulse, a rise time of 501 ps and a full width at half maximum of 1.5 ns have been obtained, when the ZrO2 single crystal ...     

Calculation of photoemission characteristics for a semiconductor model with s-like valence band and p-like conduction band

The dependence of the quantum yield and photocurrent density on Light frequency is theoretically studied for various orientations of the emission surface for the semiconductor model with simple cubic lattice and s-like valence band and p-like conduction band, and it is assumed that electron photoexcitation occurs due to indirect optical transitions.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 100–104, August, 1977.     

Photogeneration,optical absorption and transport in hydrogenated sputtered amorphous silicon

By combining direct optical transmission with steady state photocurrent and photoconductivity gain measurements we evaluated the optical absorption constant of sputtered hydrogenated a-Si between 10⁵ to 10^?1cm^?1. The photogeneration process involves excitation from the valence band or from defect states in the middle of the gap to the conduction band, with the electrons making the major contribution to the photocurrent. The electron drift mobility, determined from the photoconductivity studies, is considerably smaller than that determined from the time of flight technique, due to trapping at deep centers.     

量子阱共振腔增强型光电探测器的高功率特性

通过测量1.55 μm量子阱共振腔增强型光电探测器的光电流随反向电压和光功率的变化关系,以及模拟能带结构、电场分布等特性,研究了量子阱共振腔增强型光电探测器的高功率特性.分析了光电流的产生机制,测量了1.064 μm量子阱共振腔增强型光电探测器的光电响应,模拟了具有不同势垒高度的量子阱共振腔增强型光电探测器的光电响应.从实验和模拟两方面证明了量子阱的势垒高度是影响量子阱共振腔增强型光电探测器高功率特性的最主要因素.     

Normal incidence silicon doped p-type GaAs/AlGaAs quantum-well infrared photodetector on (1 1 1)A substrate

p-type quantum-well infrared photodetectors (QWIPs) demonstrate normal incidence response due to band mixing by utilizing valence band transitions that may break the selection rule limiting n-type QWIPs. Due to even more complicated valence band structure in (1 1 1) orientation, it is interesting to see that the p-type QWIP show both absorption and photocurrent response dominant in normal incidence. The p-type GaAs/AlGaAs QWIP was fabricated on GaAs(1 1 1)A substrate by molecular beam epitaxy (MBE) using silicon as dopant with a measured carrier concentration of 1.4 × 10¹⁸ cm⁻³. The photocurrent spectrum exhibits a peak at a wavelength of 7 μm with a relatively broad peak width (Δλ/λ_p  50%), indicating that the final state is far deep within the continuum of the valence band. The p-QWIP demonstrates a responsivity of about 1 mA/W, which is limited by the relatively low doping concentration.     

ZnO 紫外探测器的研究

利用水热法生长的N型优质ZnO晶体材料蒸镀了Au、Ag、Al金属,制备出金属-半导体-金属型(MSM)ZnO紫外探测器,测试了五种接触类型的ZnO紫外探测器(Au-ZnO-Au、Ag-ZnO-Ag、Au-ZnO-Al、Ag-ZnO-Al、Al-ZnO-Al)在365nm紫外光光照前后的I-V特性曲线。实验表明Au-ZnO-Au 型、Ag-ZnO-Ag型的探测器的光电流是暗电流的100 万倍,因此,Au-ZnO-Au型、Ag-ZnO-Ag型的ZnO紫外探测器性能比Au-ZnO-Al、Ag-ZnO-Al、Al-ZnO-Al型的优越。ZnO材料的电阻率对ZnO紫外探测器的光电流有较大的影响。在相同偏压下,电阻率越大,探测器的光电流越小。ZnO ultraviolet(UV) detectors with Metal-Semiconductor-Metal(MSM) structure were fabricated by the vacuum evaporation of Au, Ag, and Al on the n-type ZnO single crystal, which was grown with hydrothermal synthesis method. Five types of MSM ZnO detectors(Au-ZnO-Au, Ag-ZnO-Ag, Au-ZnO-Al, Ag-ZnO-Al,Al-ZnO-Al) were illuminated with 365 nm UV light respectively, and their corresponding I-V(Current-Voltage) characteristics were measured. The UV photocurrent values for Au-ZnO-Au and Ag-ZnO-Ag detectors were 1x106 times than their dark current values, and these facts imply that the Au-ZnO-Au and Ag-ZnO-Ag detectors were rather good UV detectors compared to Au-ZnO-Al, Ag-ZnO-Al, Al-ZnO-Al detectors. The photocurrent of the MSM ZnO detectors was also sensitive to the cubic resistance of the ZnO crystal. And it’s found that the higher resistance rate the ZnO crystal the smaller photocurrent value the detector under the same working voltage.