Effect of H impurity on misfit dislocation in Ni-based single-crystal superalloy: molecular dynamic simulations

The effect of H impurity on the misfit dislocation in Ni-based single-crystal superalloy is investigated using the molecular dynamic simulation. It includes the site preferences of H impurity in single crystals Ni and Ni₃Al, the interaction between H impurity and the misfit dislocation and the effect of H impurity on the moving misfit dislocation. The calculated energies and simulation results show that the misfit dislocation attracts H impurity which is located at the γ/γ' interface and Ni₃Al and H impurity on the glide plane can obstruct the glide of misfit dislocation, which is beneficial to improving the mechanical properties of Ni based superalloys.     

镍基单晶高温合金相界面错配位错网络的演化

运用分子动力学方法,研究了镍基单晶高温合金γ/γ′相界面错配位错网络的特征.通过对界面位错的形成、位错的反应、位错网络的演化等现象的分析发现,在温度场影响下,位错网络将由弛豫初期的十四面体演化成最终的正六面体. 关键词： 镍基单晶高温合金 相界面错配位错 位错网络演化 分子动力学     

外延生长薄膜中失配位错形成条件的分子动力学模拟研究

运用分子动力学方法对负失配条件下的外延铝簿膜中失配位错的形成进行了模拟研究.所采 用的原子间相互作用势为嵌入原子法(EAM)多体势.模拟结果显示：在500K下长时间静态弛豫 ，表面和内部结构完整的外延膜在9—80原子层厚度范围内(约为其热力学临界厚度的3—40 倍)均不形成失配位错，而在薄膜表面预置一个单原子层厚、三个原子直径大小的凸台或凹 坑时，失配位错则能够在15个原子层厚的外延膜上迅速形成：在动态沉积生长条件下，表面 自然形成凹凸，初始厚度为9个原子层厚的外延膜在沉积生长中迅速形成失配位错.在三种条 件下，所形成的位错均为伯格斯矢量与失配方向平行的全刃位错.分析发现：在压应力作用 下，表面微凸台诱发了其侧薄膜内部原子的挤出，造成位错形核；而表面微凹坑则直接因压 应力作用形成了一个表面半位错环核. 关键词： 外延薄膜 失配位错 分子动力学 铝     

镍基单晶高温合金界面位错网在剪切载荷作用下的演化

运用分子动力学方法,研究了镍基单晶高温合金γ/γ' 相界面错配位错网在剪切载荷作用下的演化特征.结果表明:(100),(110) 和 (111) 三种相界面形成的位错网在载荷作用下有不同形式和不同程度的损伤,其变形和损伤随温度的增加而增加.在相同的剪切载荷和温度作用下,(100) 相界面形成的正方形位错网最稳定. 关键词： 镍基单晶高温合金 界面位错网 分子动力学     

面心立方晶体外延膜沉积生长中失配位错的结构与形成过程

用分子动力学方法对5%负失配条件下面心立方晶体铝薄膜的原子沉积外延生长进行了三维模拟.铝原子间的相互作用采用嵌入原子法(EAM)多体势计算.模拟结果再现了失配位错的形成现象.分析表明，失配位错在形成之初即呈现为Shockley扩展位错，即由两个伯格斯矢量为〈211〉/6的部分位错和其间的堆垛层错组成，两个部分位错的间距、即层错宽度为1.8 nm,与理论计算结果一致；外延晶体薄膜沉积生长中，位错对会发生滑移，但其间距保持稳定.进一步观察发现，该扩展位错产生于一种类似于“局部熔融-重结晶”的表层局部无序紊乱- 关键词： 失配位错 外延生长 薄膜 分子动力学 铝     

AlSb/GaAs(001)失配位错的高分辨电子显微学研究

用200kV六硼化镧光源的高分辨透射电子显微镜观察了AlSb/GaAs(001)外延薄膜的失配位错,结合解卷处理方法把[110]高分辨电子显微像转换为试样的结构投影图,其分辨率接近电子显微镜的信息极限.根据赝弱相位物体近似像衬理论,通过分析AlSb薄膜完整区解卷像的衬度随试样厚度的变化,确定了哑铃原子对中Al和Sb原子的位置.在此基础上构建出失配位错的结构模型,再结合模拟像与实验像的匹配,确定了AlAs型界面以及Lomer和60°两类失配全位错的核心结构.     

Effect of source strength on dislocation pileups in the presence of stress gradients

The behaviour of a dislocation pileup with a finite-strength source is investigated in the presence of various stress gradients within a continuum model where a free-dislocation region exists around the source. Expressions for dislocation density and stress field within the pileup are derived for the situation where there are first and second spatial gradients in applied stress. For a pileup configuration under an applied stress, yielding occurs when the force acting on the leading dislocations at the pileup tips reaches the obstacle strength, and at the same time, it is required that the source be at the threshold stress for dislocation production. A numerical methodology is presented to solve the underlying equations that represent the yielding conditions. The yield stress calculated for a pileup configuration is found to depend on stress gradients, obstacle spacing and source/obstacle strengths. It increases with increasing the first stress gradient, yet dependent on the second stress gradient. Furthermore, while the dependency of yield stress on the obstacle spacing intensifies with increasing the first stress gradient, it diminishes with an increase of second stress gradient. Therefore, the second stress gradient, as a newly introduced parameter, can provide a new physical insight into the size-dependent plasticity phenomena at small length scales.     

氢离子辐照纯钒中形成的位错环

钒合金作为聚变堆候选材料, 其辐照损伤行为一直是关注的重点. 研究辐照时形成的位错环的性质, 其意义在于揭示纯钒中辐照空洞的长大机理. 这种机理表现为不同类型位错环对点缺陷吸收的偏压不同, 从而影响金属的辐照肿胀. 本文利用加速器对纯钒薄膜样品进行氢离子辐照, 然后, 利用透射电镜的inside-outside方法分析氢离子辐照所形成的位错环的类型. 结果表明, 在氢离子辐照纯钒中没有发现柏氏矢量b=<110>的位错环, 只有柏氏矢量b=1/2<111>和b=<110>的位错环, 这两种位错环的惯性面处于{110}-{112}之间. 能确定性质的位错环全部为间隙型位错环, 未发现空位型位错环.     

Precipitate assemblies formed on dislocation loops in aluminium-silver-copper alloys

The precipitation microstructure of the γ′ (AlAg₂) intermetallic phase has been examined in aluminium-silver-copper alloys. The microstructure developed in an Al-0.90at.%Ag-90at.Cu alloy was significantly different from that reported for binary Al-Ag alloys. The orientation relationship between the matrix and precipitate was unchanged; however, the γ′ phase formed assemblies with a two-dimensional, open arrangement of precipitates. Each such assembly contained two variants of the γ′ phase alternately arranged to form a faceted elliptical unit. The θ′ (Al₂Cu) phase formed on these assemblies after further ageing. Each assembly was formed via repeated precipitation of the γ′ phase on dissociated segments of a single dislocation loop. This faceted elliptical assembly has not been previously reported for the γ′ precipitate. The difference between the precipitation behaviour of the γ′ phase in Al-Ag and Al-Ag-Cu alloys was attributed to copper modifying the as-quenched defect structure of the matrix. The formation of faceted elliptical γ′ phase assemblies clarifies earlier observations on the precipitate number density and mechanical properties of aluminium-silver-copper alloys.     

镍基单晶高温合金γ/γ′（001）相界面上原子构型的分子动力学研究

用分子动力学方法研究了镍基单晶高温合金γ/γ′（001）相界面上三种各具特征的原子堆垛结构. 能量学计算发现，存在最优构型，动力学模拟显示不同构型的界面弛豫后，在相界面上都“成对”出现刃型错配位错. 相关计算表明体系能量、界面形成能及弛豫能都依赖于界面原子堆垛特征，而几何特征则具共性，即不同原子构型的界面具有同一的应力释放模式.     

镍基单晶高温合金γ/γ′（001）相界面上原子构型的分子动力学研究

用分子动力学方法研究了镍基单晶高温合金γ/γ′（001）相界面上三种各具特征的原子堆垛结构. 能量学计算发现，存在最优构型，动力学模拟显示不同构型的界面弛豫后，在相界面上都“成对”出现刃型错配位错. 相关计算表明体系能量、界面形成能及弛豫能都依赖于界面原子堆垛特征，而几何特征则具共性，即不同原子构型的界面具有同一的应力释放模式.     

Effect of isotropic stress on dislocation bias factor in bcc iron: an atomistic study

The effect of externally applied stress on the dislocation bias factor (BF) in bcc iron has been studied using a combination of atomistic static calculations and finite element integration. Three kinds of dislocations were considered, namely, a₀/2〈1 1 1〉{1 1 0} screw, a₀/2〈1 1 1〉{1 1 0} edge and a₀〈1 0 0〉{0 0 1} edge dislocations. The computations reveal that the isotropic crystal expansion leads to an increasing or constant dislocation bias, depending on the Burgers vector and type of dislocation. On the other hand, compressive stress reduces the dislocation bias for all the dislocations studied. Variation of the dislocation BF depending on dislocation type and Burgers vector is discussed by analysing the modification of the interaction energy landscape and the capture efficiency values for the vacancy and self-interstitial atom.     

注氢纯铝中间隙型位错环一维迁移现象的原位观察

核聚变堆材料在高能粒子辐照过程中会产生大量点缺陷,导致辐照脆性和辐照肿胀等现象.因而,研究点缺陷在辐照过程中的演变过程至关重要.点缺陷团簇的一维迁移现象是这种演变过程的主要研究内容之一.本文采用普通低压(200 kV)透射电镜,在室温条件下对注氢纯铝中的间隙型位错环在电子辐照下的一维迁移现象进行了观察和分析.在200 keV电子辐照下,注氢纯铝中的位错环可多个、同时发生一维迁移运动,也可单个、独立进行一维迁移运动.位错环沿柏氏矢量1/3<111>的方向可进行微米尺度的一维长程迁移,沿柏氏矢量1/2<110>的方向一维迁移也可达数百纳米.电子束辐照时产生的间隙原子浓度梯度是引起位错环一维迁移并决定其迁移方向的原因.位错环发生快速一维迁移时,其后会留下一条运动轨迹;位错环一维迁移的速率越快,运动的轨迹则越长,在完成迁移过后的几十秒内这些运动轨迹会逐渐消失.     

中子衍射法研究单晶镍基高温合金热机械疲劳引起的应力和晶格错配

采用中子衍射法对热机械疲劳后的单晶镍基高温合金样品内部中心点进行了实验测量,数据处理采用了双相叠加峰和单峰分析两种方法,计算得到了样品材料的宏观等效应力、应力偏量、γ相和γ′相的等效应力和晶格错配度等.实验结果表明,两种分析方法得到的宏观等效应力基本一致.在热机械疲劳循环100周出现最大宏观等效应力和应力偏量,此时位错等微缺陷达到饱和,偏离中心点处γ′相应力减小显著;在热机械疲劳开始阶段负错配度明显减小,随循环周次增多基体塑性应变累积又使负错配度以每次81×10^-6的速度逐渐线形增大. 关键词： 中子衍射 单晶高温合金 等效应力 应力偏量     

High-temperature creep of single-crystal nickel-based superalloy: microstructural changes and effects of thermal cycling

Creep tests were performed on MC2 single crystal superalloy at 950°C/200?MPa and 1150°C/80?MPa under isothermal and thermal cycling conditions with a tensile axis along the [0?0?1] direction. It was found that the thermal cycles strongly affect the creep behavior at 1150°C but not at 950°C. This was related to the repetitive precipitation and dissolution of small γ′ rafts at the higher temperature, as revealed by quantitative characterization of the γ/γ′ microstructure. The dislocation microstructure exhibits similar trends in all the tested conditions, with a very high activity of a[1?0?0]-type dislocations climbing through the rafts. Such climbing dislocations constitute a recovery process for the deformation active system. It appears that the density of a[1?0?0] dislocations, and not their climb velocity or diffusion rate, is the key parameter for the control of creep rate. The thermal cycles, which imply the creation and subsequent dissolution of rafts, provided new dislocations, which explains the acceleration of creep observed under such conditions.     

Climb via vacancy diffusion of edge dislocations in 2D dislocation microstructures

The prevention of strength degradation of components is one of the great challenges in solid mechanics. In particular, at high temperatures material may deform even at low stresses, a deformation mode known as deformation creep. One of the microstructural mechanisms that governs deformation creep is dislocation motion due to the absorption or emission of vacancies, which results in motion perpendicular to the glide plane, called dislocation climb. However, the importance of the dislocation network for the deformation creep remains far from being understood. In this study, a climb model that accounts for the dislocation network is developed, by solving the diffusion equation for vacancies in a region with a general dislocation distribution. The definition of the sink strength is extended, to account for the contributions of neighbouring dislocations to the climb rate. The model is then applied to dislocation dipoles and dislocation pile-ups, which are dense dislocation structures and it is found that the sink strength of dislocations in a pile-up is reduced since the vacancy field is distributed between the dislocations. Finally, the importance of the results for modelling deformation creep is discussed.     

Evolution of dislocation loops in austenitic stainless steels implanted with high concentration of hydrogen

Abstract

It has been found that under certain conditions, hydrogen retention would be strongly enhanced in irradiated austenitic stainless steels. To investigate the effect of the retained hydrogen on the defect microstructure, AL-6XN stainless steel specimens were irradiated with low energy (100 keV) H₂⁺ so that high concentration of hydrogen was injected into the specimens while considerable displacement damage dose (up to 7 dpa) was also achieved. Irradiation induced dislocation loops and voids were characterised by transmission electron microscopy. For specimens irradiated to 7 dpa at 290 °C, dislocation loops with high number density were found and the void swelling was observed. At 380 °C, most of dislocation loops were unfaulted and tangled at 7 dpa, and the void swellings were observed at 5 dpa and above. Combining the data from low dose in previous work to high dose, four stages of dislocation loops evolution with hydrogen retention were suggested. Finally, molecular dynamics simulation was made to elucidate the division of large dislocation loops under irradiation.     

Formation and growth of dislocation loops in ZnTe under irradiation of low energy Ar+-Ions

Abstract

Defects produced in ZnTe single crystals by Ar⁺ bombardment during ion milling for transmission electron microscopy studies are investigated in detail. The defects have been identified to be interstitial type Frank loops. Influences of ion energy and specimen temperature during the irradiation on the defect geometry are investigated. A model is proposed to describe the growing up of the loops.