Is two-dimensional metallic hydrogen possible on a {111} platinum surface?

The structure of a partially covered Pt surface with hydrogen is investigated for some typically metallic interactions. It is necessary to have an oscillatory interaction to get the observed structure of Weinberg and Merril, with any reasonable choice of core radius. Experiment are suggested to get at the metallic hydrogen layer Pt surface distance, as well as the registry of the plane of protons relative to the surface layer of Pt.     

Atomic structure of Fe {111}

A clean Fe {111} surface was prepared and studied with LEED (low-energy electron diffraction) and AES (Auger electron spectroscopy). A LEED intensity analysis was carried out with a new computational scheme (THIN) specially designed for short interlayer spacings. The results are, for the fust interlayer spacing, d₁₂ = 0.70 ± 0.03 Å and for the inner potential V₀ = 11.1 ± 1.1 eV, the confidence intervals referring to 95% confidence level. Thus, the Fe {111} surface is contracted 15.4% with respect to the bulk (0.827 Å).     

Bulk-like structure of diamond {111}

A LEED (low-energy electron diffraction) intensity analysis of C {111} 1 × 1 (diamond) has given good agreement with a surface structure which has bulk positions with small relaxation of the first interlayer spacing for both insulating and semiconducting specimens. The truncated-bulk character of C{111} 1 × 1 gives support to the previously determined bulk-like structure of stabilized Si{111} 1 × 1, and casts doubt on the disordered 7 × 7 structure suggested for the stabilized 1 × 1 phase by interpretation of photoemission measurements. In both cases rather than doubt the LEED structure, one can doubt the interpretation of the photoemission measurements.     

Passivation of laser induced defects in silicon by low energy hydrogen ion implantation

It is well established that the pulsed-laser annealing of as-implanted Si introduces electrically active defects. The aim of this paper is to show that these defects can be neutralized by low-energy hydrogen ion implantation. The techniques used for the sample characterization are current-voltage measurements and capacitance transient spectroscopy.     

Electro-optic effects induced by the built-in electric field in a {001}-cut silicon crystal

Pockel's effect and optical rectification induced by the built-in electric field in the space charge region of a silicon surface layer are demonstrated in a {001}-cut high-resistance silicon crystal. The half-wave voltage is about203 V, deduced by Pockel's effect. The ratio X~(2)zxxX~(2)zzz is calculated to be about 0.942 according to optical rectification. Our comparison with the Kerr signal shows that Pockel's signal is much stronger. This indicates that these effects are so considerable that they should be taken into account when designing silicon-based photonic devices.     

Theory versus experiment in low-energy positron diffraction by Cu{111}

Four experimental spectra measured in a low-energy positron diffraction (LEPD) experiment on Cu{111} are satisfactorily matched by intensity calculations. The calculations were carried out with a computer program developed for LEED (low-energy electron diffraction) but using a potential consisting of negative Coulomb contribution, no exchange term and the correlation correction used normally for electrons. The present experimental data are not refined enough to show that positrons do not feel an exchange potential.     

Adsorption and desorption of no from Rh{111} and Rh{331} surfaces

The adsorption and desorption chemistry of NO on the clean Rh{111} and Rh{331} single crystal surfaces was followed with SIMS, XPS, and LEED. Results suggest dissociative NO adsorption occurs at step and/or defect sites. At saturation coverage there was ～ 10 times more dissociated species on the Rh{331} surface at 300 K than on the Rh{111} surface. On both surfaces two molecular states of NO_ads have been identified as β₁, and β₂ which possess different chemical reactivity. Under the condition of saturation coverage the β₁ and β₂ states are populated on the Rh{111} surface in a different proportion than on the Rh{331} surface. Further, their population on both surfaces is coverage and temperature dependent. When the sample is heated to desorb the saturation overlayer formed on the Rh{111} and Rh{331} crystal surfaces, approximately 50% of the overlayer is found to desorb below ? 400 K primarily from the β₂ state, molecularly as NO(g). Between 300 and 400 K the β₁ state dissociates as binding sites necessary to coordinate N_ads and O_ads are freed by desorption of NO(g).     

Characterization of the current-induced resistive spots in superconducting \hbox {YBa}_{2} \hbox {Cu}_{3} \hbox {O}_{7} strips

For over a decade, ultrathin superconducting films have been developed for the detection of single photons at optical or near infrared frequencies, with competitive performances in terms of quantum efficiency, speed, and low dark count rate. In order to avoid the requirement of helium refrigeration, we consider here the use of high temperature materials, known to achieve very fast responsiveness to laser irradiation. We excite thin filaments of the cuprate \(\hbox {YBa}_{2} \hbox {Cu}_{3} \hbox {O}_{7}\) by rectangular pulses of supercritical current so as to produce either a phase-slip centre (PSC) or a normal hot spot (HS), according to the temperature and the current amplitude selected. That procedure provides information about the maximum bias current to be used in a particle detector, about the return current back to the quiescent state after excitation, and about the rate of growth and decay of a HS. We also measure the time of PSC nucleation. A unique feature of that approach is to provide the rate of heat transfer between the film and its substrate at whatever temperature, in the superconducting state, in the practical conditions of operation.     

Ferromagnetic resonance relations in {111}-oriented garnet films

Microwave resonance relations for a {111} garnet film have been derived including the uniaxial as well as the first and second order cubic anisotropy contributions. Special attention has been given to the in-plane resonance condition. For this case the calculation has been made up to second order inK ₁/MH andK ₂/MH taking into account the influence of a nonideal in-plane configuration of the film.The author wishes to express his thanks to Dr. Z. Frait for valuable discussions.     

Semi-empirical calculations of hydrogen defects in silicon

Calculations for hydrogen defect(s) in a monovacancy silicon cluster yield a stable position for this defect which: (a) does not saturate any of the silicon dangling bonds; and (b) contributes defect level(s) in the gap whose implications remain to be understood.     

Specificity of defects induced in silicon by RF-plasma hydrogenation

Silicon wafers have been submitted to hydrogen RF-plasma treatment in various experimental conditions. Hydrogen RF-plasma treatment induced two kinds of effects on Si wafers, depending on the treatment conditions: surface corrugation and formation of structural defects below the free surface. Atomic force microscopy (AFM) investigations showed that the surface roughness significantly increased with the treatment duration, leading to the formation of pyramidal humps on the surface. The structural defects resulting after the plasma treatments were investigated by conventional and high-resolution transmission electron microscopy (CTEM and HRTEM) techniques. The specificity of the induced extended defects due to hydrogen decoration was emphasized. Three types of extended defects were identified and characterized: planar defects in the {111} and {100} planes and nanometric voids. Point defects related to the hydrogenation process were investigated by electron paramagnetic resonance (EPR) in correlation with the electron microscopy results.     

Electron states and atomic positions at the {001}, {110} and {111} faces of W and Mo

The results of ab initio calculations on the {001}, {110} and {111} surfaces of W and Mo and on the (√2 × √2)R45° reconstructed W {001} surface are presented. A distribution of surface states in reasonable agreement with experiment is found. A simple parametrisation of the short range repulsive force between transition metal atoms is used to predict, for all these surfaces, relaxations which are comparable with those observed. This same parametrisation indicates that the W and Mo {001} surfaces are stable to proposed reconstructive displacements.     

High-speed planar laser-induced fluorescence of the CH radical using the C^{ 2} \varSigma ^{ + } {-}X^{ 2} \varPi \left( {0,0} \right) band

The potential for kHz-rate or high-speed planar laser-induced fluorescence (PLIF) of the Methylidyne (CH) radical using its \(C^{ 2} \varSigma ^{ + } {-}X^{ 2} \varPi\) (v′ = 0, v′′ = 0) band was investigated. We show that due to its strength and the excitation wavelength (~314 nm), which is conveniently generated by a dye laser operating with a red dye, the C–X(0,0) band is a good choice for CH LIF studies wherein suppression of background scattering is not required. While interference from polycyclic aromatic hydrocarbons is small, that caused by hydroxyl (OH) can be significant. Nonetheless, the OH lines can be avoided, and we observe good CH image fidelity. Most importantly, we show that due to the favorable properties of the CH C–X band (i.e., good signal strength and convenient wavelength), it can be used for PLIF at kHz acquisition rates using a continuously pulsing laser system. This is demonstrated in laminar and turbulent CH₄-air flames with a laser system operating at 10 kHz and delivering ~0.2 mJ/pulse at 314 nm.     

Structural lattice defects in silicon observed at111in by perturbed angular correlation

Probing of structural defects in silicon by the perturbed γγ angular correlation (PAC) technique is demonstrated between 77 K and 1300 K. The behaviour of radioactive¹¹¹ In probe atoms implanted at 295 K, is monitored during isochronal annealing in n-type, p-type and intrinsic Si. Trapping of defects, produced by the¹¹¹In implantation itself or by postirradiation is studied in P-doped crystals (10¹⁶/cm³-10¹⁷/cm³).