Post-yielding dislocation retraction of nano-lamellar TiAl single crystals

The perfect single crystal has ultra-high strength but is often accompanied by catastrophic failures after yielding. This study reveals that nano-lamellar TiAl single crystals alleviate the catastrophic failure due to a post-yielding dislocation retraction through atomistic simulations and theoretical analyses. This dislocation retraction leads to a retained post-yielding strength of1.03 to 2.33 GPa(about 50% of the yielding strength). It is shown that this dislocation retraction is caused by local stress relaxation and interface-mediated image force. The local stress relaxation is due to successive dislocation nucleation in different slip systems, and the interface-mediated image force is caused by the heterogeneous interface. Based on dislocation theory, this study demonstrates that the size effect also plays a vital role in dislocation retraction. Theoretical modeling shows that the dislocation retraction occurs when the lamellar thickness is less than approximately 12 nm. Additionally, the post-yielding dislocation retraction is more pronounced at higher temperatures, making it more effective in alleviating catastrophic failures.These findings demonstrate a viable option for avoiding catastrophic failure of single crystals through nanoscale-lamellar design.     

Multiphysical simulation analysis of the dislocation structure in germanium single crystals

To grow high-quality germanium crystals is one of the most important problems of growth industry. The dislocation density is an important parameter of the quality of single crystals. The dislocation densities in germanium crystals 100 mm in diameter, which have various shapes of the side surface and are grown by the Czochralski technique, are experimentally measured. The crystal growth is numerically simulated using heat-transfer and hydrodynamics models and the Alexander–Haasen dislocation model in terms of the CGSim software package. A comparison of the experimental and calculated dislocation densities shows that the dislocation model can be applied to study lattice defects in germanium crystals and to improve their quality.     

Mechanism of formation of the interlamella dislocation network in polyethylene single crystals

It was found experimentally that bilayered polyethylene single crystals with an orientational misfit angle larger than the critical angle, θ*, show moire pattern and only those with an angle smaller than θ* show the interlamella dislocation network. The intermediate pattern, which could neither be classified into the typical moire pattern nor the typical interlamella dislocation network, was found in the vicinity of θ*. Criteria for discrimination between the moire pattern and the interlamella dislocation network are discussed. The crystal with a misfit angle a little larger than θ* also comes to show the feature of the dislocation network during long storage of the crystal in the mother solution at the crystallization temperature. θ* is, therefore, a function of the time of storage. A mechanism is presented such that crystal lattices near the interfacial boundary are distorted to form the dislocation network by intermolecular force between the overlying crystals when the misfit angle is smaller than θ*.     

Starting stress for the onset of dislocation motion in ruby single crystals

For the purpose of preparing ruby single crystals with a high degree of structural perfection, the evolution of their structural state is investigated using four-point loading at T=1490°C and chemical etching pits. The starting stress τ_st for the onset of the dislocation motion is measured. The regularities of the arrangement of dislocations in single-crystal samples of ruby are established. The starting stress for the onset of the dislocation motion is found to be τ_st=2 MPa. The results obtained make it possible to determine the optimum parameters of thermomechanical treatment of the single crystals and, in the future, to solve the problem of their longterm serviceability.     

Determination of the dislocation structure in paratellurite single crystals using the piezo-optic effect

It is shown theoretically and experimentally that dislocations in paratellurite single crystals can be revealed using the piezo-optic effect. The mechanical-stress distribution near dislocations is calculated. Dislocations in the samples are observed using the photoelastic method and chemical etching. Data on the spatial distribution of dislocations in Czochralski-grown paratellurite crystals are reported.     

Low-temperature photoluminescence determination of dislocation slip systems in CdSe single crystals

The transformation of the low-temperature emission spectrum of cadmium selenide crystals during plastic deformation by a point load and by uniaxial compression is investigated. A one-to-one correspondence is established between the occurrence of photoluminescence bands in the vicinity of 1.765 eV and the motion of dislocations in the prismatic slip system, on the one hand, and the emergence of a 1.792-eV band as a result of dislocation slip in the basal plane, on the other. Fiz. Tverd. Tela (St. Petersburg) 40, 1845–1848 (October 1998)     

Determination of dislocation damping in copper single crystals with stress pulse method

Dislocation damping in copper single crystals was determined by the stress pulse method. For this purpose very short stress pulses were used, maximum length 30 s, by which loading conditions of a metallic matrix in the frontal region of a propagating brittle crack were simulated. At loading by these very short stress waves, strain rates above 10⁴ s^–1 are achieved, however, the strain rate during loading is not constant. Therefore a technique was elaborated that enables to compare the measured results of mechanical characteristics with very short stress pulses ( const.) with results obtained on a device with a constant strain rate of the specimen. With the use of the dependence = ( ) the existence of damping mechanisms of a viscous character was proved and the damping coefficientB determined. These results agree with theoretical assumptions in [10,20] about the probable mechanical behaviour in the region of the propagating brittle crack.ikova 22, Brno, Czechoslovakia.     

Temperature-induced rearrangement of the dislocation pattern of Persistent Slip Bands in copper single crystals

Experimental investigations are reported on mechanisms by which dislocation arrangements of Persistent Slip Bands (PSBs) respond to changes of the deformation temperature. Copper single crystals orientated for single slip were cyclically deformed well into saturation at 300 K at an applied resolved plastic shear-strain amplitude, , such that the plastic strain became localized in PSBs. The spacings of the dislocation walls in these PSBs are about 1.4 m. After the temperature had been lowered to 77 K, cyclic deformation was continued with unchanged . A transformation of the dislocation pattern started. A certain fraction of the PSBs produced at 300 K finally showed a mean wall spacing of about 0.7 m which is typical for PSBs formed at 77 K. The remaining PSBs did not finish the transformation and became obviously inactive. In the state of cyclic saturation reattained at 77 K 50% of the PSBs, which had been formed at 300 K, show the dislocation pattern characteristic of 77 K. It is concluded that the amplitude of the resolved plastic shear strain localized in a PSB, , must be twice as large at 77 K as at 300 K. In an additional series of experiments crystals were cyclically deformed at constant temperatures of 430 K, 300 K, 190 K, and 77 K. In the temperature range covered by these experiments, the amplitude of the saturation flow stress, _S, appears to be proportional to the intrinsic amplitude of the PSBs, .     

Evolution of a dislocation structure in the surface layers of single crystals during high-temperature annealing

The dislocation structure of KCl crystals annealed in a forevacuum has been shown to display a nonmonotonic variation of the density of dislocations in the direction from the surface. Our experiments and estimates showed that the observed redistribution of dislocations near the surface is due to the diffusion of impurities from the atmosphere and the generation of dislocations in the diffusion zone.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 48–52, September, 1987.     

Magnetic studies of the dislocation structure of iron single crystals deformed at 295 K

The dislocation density in iron single crystals deformed at 295 K has been studied by measuring the coercive field, the initial susceptibility, the Rayleigh constant, and the reversible susceptibility in the approach to ferromagnetic saturation as functions of the resolved shear stress. The influence of different dislocation types on the saturation susceptibility has been calculated. In this way it is possible to distinguish dislocation structures composed of screw or edge dislocations and to reveal long-range internal stresses, which govern the work-hardening in the deformation stage II/III. The dislocation density increases in stage I linearly and in stage II/III quadraticaly with the resolved shear stress. In stage O mainly isolated screw dislocations are created.     

Radio-frequency paramagnetic resonance spectra, detected from dislocation displacement in NaCl single crystals

Results are reported here of a study of the resonance effect of a constant magnetic field and a variable magnetic field crossed with it on the rate of macroplastic deformation and motion of edge dislocations in NaCl crystals. The frequencies of the variable magnetic field at which the maximum variations in the plasticity of the crystals are observed correspond to the resonant frequencies for transitions between the Zeeman sublevels in paramagnetic complexes of point defects and complexes consisting of a point defect and a dislocation. Analysis of the radio-frequency spectra obtained enabled us to establish the role of intercrystal reactions in the formation of the mechanical properties of the crystals. Fiz. Tverd. Tela (St. Petersburg) 41, 1778–1784 (October 1999)     

The temperature dependence of dislocation charge in calcium doped single crystals of potassium chloride

Abstract

Using the ultrasonic piezoelectric composite oscillator technique we have measured the temperature dependence of dislocation charge in bent KCl single crystals as a function of Ca impurity concentration. In each case the charge changes sign at an extrinsic isoelectric temperature, T_e , and the shift in Te with impurity concentration allows the calculation of the individual thermodynamic vacancy formation parameters. We obtain h₊ = 1.244±0.014 eV, s₊ = 4.50±0.19 k, h- = 1.346? 0.014 eV and s- = 5.11?0.19K.     

Ultrasonic investigation of sandwich single crystals designed for studies of dislocation resonance damping

A novel sandwich single crystal (SSC) technique has been designed for improved MHz-pulse-echo investigations of dislocation damping. In the present SSC the high purity Cu crystal to be investigated is epitaxially overgrown by a buffer crystal doped with 200 ppm Mn. The buffer avoids interference between ultrasonic transducer and sample by shielding the investigated dislocation structure against stresses caused e.g., by different thermal expansion of the quartz transducer. The frequency dependence of dislocation resonance damping measured on the SSC has been analyzed and compared with measurements on normal single crystalline samples of high purity Cu and Cu doped with 200 ppm Mn.