Improved slow-positron yield using a single crystal tungsten moderator

A well-annealed W(110) single crystal was used as a fast-to-slow positron moderator. The measured moderator efficiency at room temperature using a⁵⁸Co positron source in the backscattering geometry is =(3.2±0.4)×10^–3, roughly a factor of three better than for the best previously reported Cu(111)+S moderator. We find a stable positron moderation efficiency over a period of several weeks when maintained at pressures around 10^–9 Torr and an energy spreadE = 0.7 eV of the emitted slow positrons. An initial attempt was made to fabricate a hybrid Cu on W(110) moderator, which yielded of about 1.2×10^–3 after annealing.     

Diffractive dissociation reaction np → Λ0K0p for incident neutron momenta between 30 and 70 GeV/c BIS-2 collaboration

We present results of the exclusive diffractive reaction np ⁰K⁰p at 0·08 < |t|< 0·53 GeV²/c² and momenta between 30–70 GeV/c at the Serpukhov neutron beam. Thet-dependence is exp (Bt) withB= 11·4± 2·3 (GeV/c)^–2 and it exhibits the diffractive minimum at ¦t¦ 0·28 GeV²/c² for ⁰K⁰ massesM < 1·8 GeV/c².B decreases with increasingM. Correlation with the beam direction is observed in the rest frame of the ⁰K⁰ system: the cross section rises for the forward-going ⁰. The rise is more pronounced for higherM. The cross section of reaction np ⁰K⁰p for 0<|t|< 0·53 GeV²/c² is 10·3 ± 2·5 ± 2·8 b.     

A resonant bridge for measuring ɛ and tan δ for highly conducting substances

This bridge covers the range 5–200 kHz for substances of conductivity up to 10^–2 ohm^–1 cm^–1. The relative error in for tan =100 is ± 3%, while tan is measured to ± 2%. Results are given for solutions of high conductivity.     

The metal-semiconductor transition in amorphous Si1−x Cr x films:T 0.19-contribution to the metallic conductivity

A detailed phenomenological re-analysis of previously published conductivity data, (T, x), is presented. It is based on the investigation of differences, (T, x ₁)–(T, x ₂). In this way, the cusp-like low-temperature term is amplified against the other temperature dependent contributions. This term can be described by wherep=0.19±0.03. It is present, if (4.2 K,x) exceeds 260 ^–1 cm^–1, at least up to (4.2 K,x)1350 ^–1 cm^–1 and forT60 K. But it is absent, if (4.2 K,x)180 ^–1 cm^–1. The disappearance of this contribution should be related to the metal-semiconductor transition, taking place atx _c 0.14. On the other hand, the presence of a term proportional toT ^1/2, as predicted by Altshuler and Aronov, seems unlikely.It is argued that the term should be related to the interplay of electron-electron interaction and disorder. The comparison with data from the literature shows that this contribution might also be present in heavily doped crystalline semiconductors.     

Optical Spectra of Zinc Oxide in the Wide Energy Range 0–30 eV

A full set of spectra of the optical functions of a zinc oxide crystal in the range 0–30 eV has been calculated on the basis of the experimental spectrum of characteristic losses –Im ^–1. The ₂, ₁ and Im ^–1, Re ^–1 spectra were decomposed into elementary components. The most intense transverse and longitudinal components of transitions and their parameters have been determined. The data obtained were compared with theoretical calculations of the bands.     

Structural phase transition and internal fields in rubidium thiocyanate probed through vibrational spectroscopy

A comprehensive vibrational study of Rubidium thiocyanate (RbNCS), in the 298–448°K range reveals that the orthorhombic to tetragonal transition atT _c440°K is of order-disorder type exhibiting purely second order characteristics. A consistent order-parameter exponent 0.45±0.04 has been obtained from both Raman and IR measurements. In the Raman spectra, the appearance of sidebands in both the C–N&C–S stretching modes and their temperature dependence indicate the existence and a gradual diminution of internal electric field asT approachesT _c. These results have been discussed in the context of an anharmonic oscillator model. An activation energy (U) for the reorientational motion of NCS^– ions,U0.29±0.02 eV, has been calculated from large changes in the bandwidth (_C-N) nearT _c.     

Single crystal EPR spectrum of Cr3+ in lanthanum lutecium gallium garnet

The Cr³⁺ EPR spectra of YAG type crystals normally consist of four peaks whose positions are dependent on the axial zero-field splitting D with axis along a 111 direction and angle between that direction and the applied field H ₀. In LLGG only three principal peaks are observed with zero-field axis nearly along x, y or z. This anomaly is attributed to the relatively small size of Cr³⁺ compared to Lu³⁺ which it displaces in an octahedral site. D varies slightly for the different zero-field axes: 0.480 cm^–1 along x, 0.429 cm^–1 along y and 0.470 cm^–1 along z. The spectroscopic splitting factor g=1.978±0.001 is essentially isotropic and independent of axes within the experimental error.     

The electronic structure of Rhodium: Angle-resolved studies of photoelectron and secondary electron emission

We report electron spectroscopic studies of the Rh(111) surface, with the aim to obtain bulk band-structure information. We have measured normal photoemision using tunable synchrotron radiation in the range of photon energies between 11 eV and 55 eV, and angle-dependent photoemission along the LUX and LKL azimuths using the He resonance lines (=21.2 eV, 40.8 eV). To complement these data, we studied angleresolved secondary electron emission after excitation with electrons and photons. We derive parts of the one-electron energy dispersionE(k) along L, and determine the energies of several bulk critical points (in eV):E(> ₇₊/₈₊)=–2.75±0.10,E(> ₈₊=–0.85±0.10,E(> _7–=16.1±0.5,E(> _6–/> _8–)=20.5±0.5,E(X ₇₊)=–5.0±0.1,E(L ₆₊)=–5.6±0.5,E(L ₆₊/L ₄₊₊₅₊)=–2.65±0.10,E(L ₆₊)=9.0±0.5 eV. Our results are compared to several available band structure calculations.     

Analyticity properties of eigenfunctions and scattering matrix

For potentialsV=V(x)=O(|x|^–2–) for |x|,x³ we prove that if theS-matrix of (–, –+V) has an analytic extension to a regionO in the lower half-plane, then the family of generalized eigenfunctions of –+V has an analytic extension toO such that for |Imk|<b. Consequently, the resolvent (–+V–z ²)^–1 has an analytic continuation from ⁺ to {kOImk|<b} as an operator from _b ={f=e ^–b|x| g|gL ₂(³)} to _–b . Based on this, we define for potentialsW=o(e ^–2b|x|) resonances of (–+V, –+V+W) as poles of and identify these resonances with poles of the analytically continuedS-matrix of (–+V, –+V+W).The author would like to thank the Institute for Advanced Study for its hospitality and the National Science Foundation for financial support under Grant No. DMS-8610730(1)     

Fine Structures of the Permittivity and Characteristic Losses of Electrons in Fluorite

Experimental-computational spectra of the permittivity and characteristic losses –Im^–1 for energies in the range 5–21 eV at a temperature of 4.2 K and theoretical spectra of and –Im^–1 of a fluorite crystal are resolved into elementary transition bands. The parameters of transition bands (energies of their maxima E _i, band halfwidths H _i and areas S _i, and oscillator forces f _i) are determined. A correlation of the spectral bands of and –Im^–1is established, and their specific features are elucidated.