高温超导Ni-W基带的织构研究

涂层超导是目前国际超导界的研究热点和重点,所采用的韧性金属基带多为Ni和Ni-W合金.本文采用粉末冶金方法制备了Ni-3 at.%W和Ni-5 at.%W合金.利用轧制辅助双轴织构基带(RABiTS)技术制备了Ni-W合金基带,系统研究了Ni-W合金形变和再结晶织构转变规律.研究表明:通过大变形量的冷轧和高温再结晶退火,可以得到强立方织构的Ni-W合金基带.     

高温超导Ni—W基带的织构研究

涂层超导是目前国际超导界的研究热点和重点，所采用的韧性金属基带多为Ni和NiW合金．本文采用粉末冶金方法制备了Ni-3 at．％W和Ni-5 at．％W合金．利用轧制辅助双轴织构基带（咖TS）技术制备了Ni-W合金基带，系统研究了Ni-W合金形变和再结晶织构转变规律．研究表明：通过大变形量的冷轧和高温再结晶退火，可以得到强立方织构的Ni-W合金基带．     

YBCO涂层导体用Ni5W基带的制备和立方织构的发展

为了制作能满足YBCO涂层导体（coated conductor）所需要的高强度、低磁性的立方织构基带，本工作用粉末冶金方法制作了Ni-5at％W合金基带．为评估基带中立方织构的发展，用March-Dollase函数对各种热处理样品的择优取向度进行了研究，结果与用X射线极图法和电子背散射衍射法得到的结果基本一致．研究结果表明，在实验中所用的工艺参数范围内，随总加工率和热处理温度的提高，基带中立方织构百分数明显增高．提高总加工率实际增加了冷加工样品中立方织构晶粒或立方核心的数量．实验中得到了较好的和实用的工艺制度，用这种工艺可以制作出具有99％～100％立方织构百分数，并具有很好一致取向度的Ni5W基带．     

YBCO涂层导体用Ni5W基带的制备和立方织构的发展

为了制作能满足YBCO涂层导体(coated conductor)所需要的高强度、低磁性的立方织构基带,本工作用粉末冶金方法制作了Ni-5at%W合金基带.为评估基带中立方织构的发展,用March-Dollase函数对各种热处理样品的择优取向度进行了研究,结果与用X射线极图法和电子背散射衍射法得到的结果基本一致.研究结果表明,在实验中所用的工艺参数范围内,随总加工率和热处理温度的提高,基带中立方织构百分数明显增高.提高总加工率实际增加了冷加工样品中立方织构晶粒或立方核心的数量.实验中得到了较好的和实用的工艺制度,用这种工艺可以制作出具有99%～100%立方织构百分数,并具有很好一致取向度的Ni5W基带.     

通过差热分析对YBCO高温超导织构体生长极限的研究

通过差热分析研究成分变化对YBa2Cu3O7-δ／Y2BaCuO5(YBCO）高温超导织构体系列的熔化温度和固化反应温度的影响，结合排推效应所产生的成分不均匀性，分析了超导体初始组分为YBa2Cu3O7-δ＋xY2O3的织构生长极限。发现含约6－7wt%(或50mol%)CuO时，固化温度出现明显极小值。     

熔融织构YBCO的磁性

测量了熔融织构YBCO样品从1.5K到89K的磁化曲线。磁场H平行于c轴时,在1.5K,7K和10K观察到磁通跳跃,在15—83K的温度区间观察到峰值现象。详细分析了磁化曲线和磁临界电流的各向异性。讨论了晶粒之间连接的性质和主要的钉扎中心。 关键词：     

熔融织构YBCO单晶的层间耦合

在０～７．５Ｔ磁场范围内,采用膺磁通变压器结构（八电极）,测量了磁场平行于ｃ轴时熔融织构生长的ＹＢＣＯ单晶上和下两个表面的电阻－温度关系。实验结果表明,在测量仪表所能测量的精度范围内,没有观测到Ｖｔｏｐ和Ｖｂｏｔ的情况,Ｖｔｏｐ总是大于Ｖｂｏｔ。不同磁场下Ｖｔｏｐ／Ｖｂｏｔ随着温度的降低而变化;ｃ－轴电阻的测量结构则表明,样品沿ｃ方向与ａｂ面具有相似的超导电性,且Ｔ＾ｃｃ〉Ｔａｂｃ,这充分表明随着     

高温超导涂层导体——RE123双轴织构技术及其发展状态

本文对高温超导涂层导体及其双轴织构外延生长技术进行了全面的论述。内容分金属基体、缓冲层、超导层三个方面,根据金属基体的不同将缓冲层分成四个类型,即辊扎双轴织构金属基带(RABiTS)上外延缓冲层、自氧化外延(SOE)NiO缓冲层、离子束辅助沉积(IBAD)缓冲层和衬底倾斜沉积(ISD)缓冲层。总结了超导层沉积工艺和人工磁通钉扎中心的最新研究成果,评述和展望了高温超导涂层导体的当前国际状态和发展前景。     

高温超导涂层导体——RE123双轴织构技术及其发展状态

本文对高温超导涂层导体及其双轴织构外延生长技术进行了全面的论述。内容分金属基体、缓冲层、超导层三个方面,根据金属基体的不同将缓冲层分成四个类型,即辊扎双轴织构金属基带(RABiTS)上外延缓冲层、自氧化外延(SOE)NiO缓冲层、离子束辅助沉积(IBAD)缓冲层和衬底倾斜沉积(ISD)缓冲层。总结了超导层沉积工艺和人工磁通钉扎中心的最新研究成果,评述和展望了高温超导涂层导体的当前国际状态和发展前景。     

DC与CC 5052铝合金冷轧后沿厚度方向织构分布状态对比的X射线衍射分析

采用X射线衍射测试极图、使用专用软件计算织构取向分布函数(ODF), 研究了热轧后454℃×4h再结晶退火的直接铸造5052铝合金板(DC 5052)和双履带连续冷却铸造5052铝合金板(CC 5052)冷轧制到不同压下量的试样,自表层至心部层的冷轧织构分布差别,为工业上生产及应用DC 5052与CC 5052铝合金冷轧板提供依据。结果显示：同样的大压下量时CC 5052的β织构强度及体积分数高于DC 5052的。冷轧前CC 5052的再结晶织构Cube的体积分数小于DC 5052的,剩余位向的体积分数多于DC 5052的,导致CC 5052表层的β织构强度及体积分数达到与1/4层、中心层接近所需要的冷轧压下量比DC 5052试样需要的小。CC 5052冷轧板冲压加工方面的性能优于DC 5052冷轧板。     

Effect of Co-doping content on hydrothermal derived ZnO array films

Cobalt doped ZnO films are synthesised using a hydrothermal process. The effect of Co²⁺ concentration on morphology, phase composition, crystallisation and spectroscopic characteristics of ZnO films is investigated. The results indicate that both the structure and morphology of the ZnO films evolve with the concentration of cobalt ions incorporated into the lattice. In the presence of a small amount of Co²⁺ ions, films are formed that comprise hexagonal ZnO nanorods, oriented with the c-axis perpendicular to the substrate. With increasing amount of Co²⁺, cracks in the ZnO nanorods can be observed and growth in the [0 0 1] direction is significantly inhibited. When the Co²⁺ concentration exceeds 0.010 M, ZnO rods with the typical hexagonal structure are no longer observed and instead, ZnO films comprising close-packed grains with an irregular polygonal structure are formed. The epitaxial growth of ZnO films is nearly completely inhibited when the concentration of Co²⁺ is increased above 0.050 M. This behaviour can be explained by the selective adsorption of the organic substances in the solution onto the (0 0 1) ZnO crystal face, thus inhibiting growth in the [0 0 1] direction and disrupting the crystallisation of ZnO films. Increasing the Co content deteriorates the crystallisation of ZnO rods and increases tensile stresses present in the ZnO films.     

The preferential growth of pyrite films prepared by thermal sulfuration of Fe2O3 films

Pyrite thin films were prepared by the sol-gel dip coating process and sulfuration treatment. The evolution of crystal orientation for the pyrite films was investigated as a function of sulfuration temperature. And the effect of crystal orientation on the electrical and optical properties was studied. It was found that films show (1 1 1) preferred orientation after sulfurized at low temperature. However, the (2 0 0) and (3 1 1) mixed preferred orientations were observed when pyrite films were sulfurized at higher temperature. Experimental results also indicate that the carrier concentration is high when the films show (1 1 1) preferred orientation. And the optical absorption coefficient is also large when the films grow with (1 1 1) preferred orientation. It is speculated that surface free energy could play a more important role in determination of preferred orientation when films were sulfurized at low temperature. However, the strain energy plays a more important role in determination of preferred orientation when films were sulfurized at higher temperature.     

LBO晶体上ZrO2薄膜的显微结构和光学性质

用电子束蒸发方法在三种不同取向的三硼酸锂(LiB3O5,简称LBO)晶体上沉积了ZrO2薄膜.采用分光光度计和X射线衍射技术对LBO晶体基底结构对薄膜光学性质和显微结构的影响进行了研究.实验结果表明基底结构对薄膜的显微结构和光学性质具有明显影响,即X-LBO,Y-LBO和Z-LBO上沉积的ZrO2薄膜分别沿m(-212),m(021)和o(130)择优生长,且m(021)择优取向的ZrO2薄膜具有最高的折射率和最小的晶格不匹配.     

膜厚对直流磁控溅射Nb薄膜微结构的影响

 采用直流磁控溅射方法制备膜厚为50, 100, 200, 400, 600 nm的Nb薄膜,对薄膜的沉积速率、表面形貌、晶体结构进行了研究,并对其应力和择优取向进行了详细的分析。原子力显微镜图像显示Nb膜表面光滑、致密,均方根粗糙度达到0.1 nm量级。X射线小角衍射给出了薄膜的晶格结构、晶粒尺寸和应力情况。分析表明薄膜为多晶体心立方结构(bcc),在(110)晶面方向存在明显的择优取向,且随着薄膜厚度增大而增强。Nb膜应力先随薄膜厚度增大而增大,在200 nm时达到最大值(为1.015 1 GPa),后随薄膜厚度的增大有所减小。     

Preparation and characterization of thick cubic boron nitride films

Cubic boron nitride （c-BN） films are prepared by the radio frequency magnetron sputtering technique. The stresses and crystallinities of the films are estimated by the Fourier transform infrared spectroscopy of c-BN samples, including the peak shifts and varieties of full widths at half maximum. The effects of the B-C-N interlayer and the two-stage deposition method on the c-BN films are investigated. Then the thick and stable c-BN films are prepared by a combination of the two methods. The properties of the interlayer and film are also characterized.     

平面靶直流溅射制备YBCO高温超导薄膜研究

开展了平面靶溅射法制备YBa2Cu3O7-δ(YBCO)高温超导薄膜工艺研究,以达到提高沉积速率的目的。通过增加工作气体总压(Pt),采用基片旋转达到离轴溅射模式,有效地克服了传统平面靶直流溅射法中高能粒子轰击和负离子反溅射现象。在两英寸LaA lO3(LAO)基片上成功外延生长得到了微观结构良好、电学性能优越(临界电流密度Jc=2.3/2.0mA/cm2)的双面YBCO高温超导薄膜。     

用射频溅射法制备立方氮化硼薄膜

利用射频溅射方法在n型Si(111)衬底上制备出立方相含量接近100%且粘附性较高的立方氮化硼(c-BN)薄膜.傅里叶变换红外谱(FTIR)的结果表明，基底负偏压对薄膜立方相含量和薄膜压应力有很大影响，另外，衬底的电阻率对c-BN生长和薄膜的压应力也有一定的影响. 关键词： 立方氮化硼 射频溅射 压应力 基底负偏压     

Low frictional property of copper oxide thin films optimised using a combinatorial sputter coating system

A combinatorial sputter coating system has been developed that can optimize the crystal preferred orientation of coating films. With this system, it is possible to synthesize various kinds of coatings whilst precisely controlling conditions such as the sputter gas, the gas pressure, the gas partial pressure, the r.f. power, the substrate temperature, the distance between the substrate and target, etc. In this way, we successfully synthesized copper oxide coatings with different crystal preferred orientations, and low frictional property was obtained by optimizing the crystal preferred orientation.     

Investigation of ultra—thin ferromagnetic films with a simple cubic lattice

Using Green‘s function method,we investigate ferromagnetic films with a simple cubic lattice containing up to ten monolayers.The Hamiltonian includes the Heisenberg exchange term,surface anisotropy (SA) and dipole interaction (DI).We calculate the magnetization as a function of temperature and film thickness,and we analyse the behaviour of spin canting.The result is in agreement with experiments.We calculate phase diagrams of SA versus DI to show the conditions under which spontaneous magnetization can occur.As a special case,we discuss the Heisenberg model without SA and DI.     

体心立方金属W薄膜晶体取向的膜厚尺寸效应及其表面映射

体心立方W膜(110)织构系数T₁₁₀的变化存在非单调的厚度尺寸效应，这依赖于薄膜中晶粒形核和长大时表面能和应变能的相互作用，薄膜表面结构演变反映了两者的竞争过程.应用小波变换结合分形几何描述薄膜表面结构各向异性行为，用此法构建了薄膜织构系数T₁₁₀与表面结构各向异性的关系，表明薄膜晶体取向存在表面映射. 关键词： 金属薄膜 晶体取向 膜厚 表面形貌