Electron screening effect in the reactions He(d, p)He and d(He, p)He

The cross section of the reactions ³He(d, p)⁴He and d(³He, p)⁴He has been measured at the center-of-mass energies E=5 to 60 keV and 10 to 40 keV, respectively. The experiments were performed to determine the magnitude of the electron screening effect leading to the respective electron-screening potential energy U_e=219±7 and 109±9 eV, which are both significantly higher than the respective values from atomic physics models, U_e=120 and 65 eV.     

Measurements of interaction cross sections and radii of He isotopes

Secondary beams of ³He, ⁴He, ⁶He, and ⁸He were produced through the projectile fragmentation of an 800 MeV/nucleon ¹¹B primary beam. Interaction cross sections (σ_I) of all He isotopes of 790 MeV/nucleon on Be, C, and Al targets were measured by a transmission-type experiment. The interaction nuclear radii of He isotopes R_I(He) = (σ_I/π)^1/2 − R _I(T) where R_I(T) is the radius of the target nucleus, have been deduced to be R_I(³He) = 1.59 ± 0.06 fm, R_I(⁴He) = 1.40 ± 0.05 fm, R_I(⁶He) = 2.21 ± 0.06 fm, and R_I(⁸He) = 2.52 ± 0.06 fm.     

A study on the reaction between chlorine trifluoride gas and glass-like carbon

The reaction between glass-like carbon (GC) and chlorine trifluoride (ClF₃) gas was investigated with weight measurements, surface analysis, and gas desorption measurements, where the ClF₃ gas is used for the in situ cleaning of tubes in silicon-related fabrication equipment. From Auger electron spectroscopy and X-ray photoelectron spectroscopy measurements, a carbon mono-fluoride, –(CF)_n–, film near the surface of GC is considered to be grown onto the GC surface above 400 °C by the chemical reaction with ClF₃, and this thickness of the fluoride film depends on the temperature. The grown fluoride film desorbs by annealing in a vacuum up to 600 °C. Although GC is apparently etched by ClF₃ over 600 °C, the etch rate of GC is much lower than that of SiC and quartz.     

Growth of β-MnO2 films on TiO2(110) by oxygen plasma assisted molecular beam epitaxy

We have used oxygen plasma assisted MBE to grow epitaxial films of pyrolusite (β-MnO₂) on TiO₂(110) for thicknesses of one to six bilayers (BL). We define a bilayer to be a layer of Mn and lattice O and an adjacent layer of bridging O within the rutile structure. The resulting surfaces have been characterized in situ by reflection high-energy electron diffraction, low-energy electron diffraction, X-ray photoelectron spectroscopy and diffraction, and atomic force microscopy. Well-ordered, pseudomorphic overlayers form for substrate temperatures between 400 and 500°C. Mn–Ti intermixing occurs over the time scale of film growth (1 BL/min) for substrate temperatures in excess of 500°C. Films grown at 400–500°C exhibit island growth, whereas intermixed films grown at temperatures of 500–600°C are more laminar. 1 BL films grown at 450°C are more laminar than multilayer films grown at the same temperature, and form a well-ordered surface cation layer of Mn on the rutile structure with at most 10% indiffusion to the second cation layer.     

一种可用于极化~3He实验的新型磁场系统

原子核自旋极化的~3He气体已被深入研究并广泛用于各种科学实验.在过去的极化~3He实验中,为了减小磁场梯度对纵向弛豫时间的影响,通常会建造大尺寸的亥姆霍兹线圈来提供所需均匀度的主磁场环境.本文通过计算得到了新的六正方形线圈系统,可以为极化~3He实验提供小型高均匀性的磁场装置.其中线圈系√统内部超过30%的区域磁场梯度满足(|▽B_x|~2+|▽B_y|~2)/B_0 10~(-4)cm~(-1),这一均匀区域比例超过了现在所有用于极化~3He实验的线圈装置.对于其他需要大均匀区域磁场环境的研究实验,新的六线圈系统也具有很好的应用价值.     

Optical second-harmonic investigations of the isothermal desorption of SiO from the Si(100) and Si(111) surfaces

The isothermal desorption of SiO from the Si(100) and Si(111) surfaces was investigated by means of optical second-harmonic generation (SHG). Due to the high adsorbate sensitivity of this method, desorption rates could be measured over a wide range from 10⁻¹ to 10⁻⁶ ML s⁻¹. From their temperature dependence between 780 and 1000 K, activation energies of E_A=3.4±0.2 eV and E_A=4.0±0.3 eV and pre-exponential factors of ν₀=10^16±1 s⁻¹ and ν₀=10^20±1 s⁻¹ for SiO desorption were obtained for Si(100) and Si(111), respectively. In the case of the Si(100) surface, a pronounced decrease of the first-order rate constants was observed upon increasing the initial coverage from 0.02 to 0.6 ML. The results are interpreted in terms of coverage-dependent oxygen-binding configurations, which influence the stability of the oxide layer.     

Surface gap and surface electronic states in CuGeO3 single crystal

The surface and bulk electronic excitations of CuGeO₃ are investigated by means of electron energy loss and polarized X-ray absorption spectroscopy. CuGeO₃ shows a surface charge transfer gap of about 3.0±0.3 eV. The unoccupied oxygen derived density of states, as probed by X-ray absorption at the O 1s edge, is in good agreement with recent many-body calculations.     

Pionic K X-rays in liquid He

Energies and lorentzian widths of pionic K X-ray transitions have been measured in liquid ³He with improved accuracy. The strong interaction on the π³He 1s level is found to be attractive and to produce an increase in the K transition energies of 34 ± 4 eV; the measured lorentzian width is 36 ±7 eV. Measured values are also presented for K X-ray energies in liquid π⁴He and μ⁴He, the lorentzian width of the 1s level in π⁴He, and relative intensities of K X-ray transitions in π³He, π⁴He and μ⁴He. The measurements are compared with those of others and with recent theoretical calculations.     

Auger electron spectroscopy and electron energy loss spectroscopy studies on carbonization of Si(100) and (111) surfaces with ethylene

The reactions of Si(100) and Si(111) surfaces at 700 °C (973 K) with ethylene (C₂H₄) at a pressure of 1.3×10⁻⁴ Pa for various periods of time were studied by using Auger electron spectroscopy (AES) and electron energy loss spectroscopy (ELS). For a C₂H₄ exposure level, the amount of C on the (111) surface was larger than that on the (100) surface. The formation of β-SiC grain was deduced by comparing the C_KLL spectra from the sample subjected to various C₂H₄ exposure levels, and from β-SiC crystal.     

Adsorption of He on He crystal surfaces

We have compared the surface properties of crystals respectively grown from normal ⁴He containing 130 ppb of ³He and from ultrapure ⁴He (0.4 ppb). Below 0.4 K, ³He impurities are found to decrease both the surface tension and the step energy. Our results are consistent with the existence of two-dimensional bound states for ³He atoms at the solid-liquid interface. Quantitative agreement with the data is found with a binding energy _s ≈ 4.3 K and a ³He density saturating around 0.4 monolayer. The presence of steps is found to increase the binding energy by about 10 mK.     

Inelastic electron scattering from He

The spectra of electrons scattered inelastically from ⁴He have been measured at incident energies from 150 MeV to 400 MeV for scattering angles from 38° to 90°. Through the use of a liquid ⁴He target, a high momentum resolution (≈0.25%) was obtained, and the 20 MeV 0⁺ state of the -particle was observed for the first time in electron scattering. The excitation energy and the total width of this state were determined and are in good agreement with the results from other experimental methods. It was found that the total disintegration cross section appears be smaller than 2(σ_p+σ_n) by more than an order of magnitude at the lowest q²(≈ 0.33 fm⁻²). In earlier work the assumption of a total cross section of 2(σ_p+σ_n) was found to be quite accurate for higher q². As a new result, the partial radiative width for the 0⁺ state is determined to be Γ_rad = 1.1±0.3 meV.     

Oxidation of heated diamond C(100):H surfaces

This paper extends a previous study (Pehrsson and Mercer, submitted to Surf. Sci.) on unheated, hydrogenated, natural diamond (100) surfaces oxidized with thermally activated oxygen (O^*₂). In this paper, the oxidation is performed at substrate temperatures from T_sub=24 to 670°C. The diamond surface composition and structure were then investigated with high resolution electron energy loss spectroscopy (HREELS), Auger electron spectroscopy (AES), electron loss spectroscopy (ELS) and low energy electron diffraction (LEED).

The oxygen coverage (θ) increased in two stages, as it did during oxidation at T<80°C. However, there are fundamental differences between the oxidation of nominally unheated and heated diamond surfaces. This difference is attributed to simultaneous adsorption and rapid desorption of oxygen species at higher temperatures; the desorption step is much slower without heating. The initial oxidation rates were similar regardless of the substrate temperatures, but the peak coverage (θ) was lower at higher temperatures. For example, θ plateaued at 0.4±0.1 ML at 600°C. The lower saturation coverage is again attributed to oxygen desorption during oxidation. Consistent results were obtained on fully oxidized surfaces, which when heated in vacuum to T_sub=600°C, lost 60% of their adsorbed oxygen. ELS revealed few C=C dimers on the oxidized surfaces, and more graphitization than on unheated surfaces. Oxidation at elevated temperatures also increased the carbonyl to ether ratio, reflecting etching-induced changes in the types of surface sites. The carbonyl and C–H stretch frequencies increased with oxygen dose due to formation of higher oxidation states and/or hydrogen bonding between adjacent groups. The oxygen types did not interconvert when the oxidized surfaces were heated in vacuum. Oxygen desorption generated a much more reactive surface than heating-induced dehydrogenation of the smooth, hydrogenated surface.     

Nucleon-nucleon final-state interactions in the reactions He(p, d)2p, He(p, t)2p and He(p, He)pn

The energy spectra of deuterons, tritons and ³He particles from the reactions ³He(p, d)2p, ⁴He(p, t)2p and ⁴He(p, ³He)pn have been measured at angles between 6° and 60° lab. The ³He(p, d)2p reaction was studied at both 30.5 and 49.5 MeV incident proton energies, while the other two reactions were studied at 49.5 MeV only. The energy spectra are compared with calculations based on the Watson-Migdal model of final-state interactions.     

Spectroscopy of molecules in helium droplets

The work reviewed in the talk explores the possibilities of using molecules immersed in liquid helium as probes to study superfluidity on the microscopic level. For this purpose liquid ⁴He, ³He and mixed ⁴He/³He droplets consisting of 10³–10⁵ atoms have been doped with single molecules or a small defined number of molecules which form clusters in the droplet interior. The dopants were investigated with high-resolution optical spectroscopy. The electronic and rovibrational spectra show unusually sharp spectral lines and unexpected features such as a distinct gap between the zero phonon line and the phonon wing as well as the free rotations of single molecules. Both are not observed in colder nonsuperfluid ³He droplets and therefore are considered to be new microscopic manifestations of superfluidity. Spectroscopic studies of small p-H₂ and o-D₂ clusters surrounding a single chromophore molecule formed in the interior of the He droplets are also reported.     

Escape of charged particles at stopping annihilation of antiprotons in the heavy nuclei of nuclear photoemulsion

“Rare” annihilation channels for antiprotons stopping on heavy (Ag, Br) nuclei of photoemulsion, have been sought; 4872 stops of antiprotons on photoemulsion nuclei are analysed. Events of formation and decay of the hyperfragment _Λ⁴H, escape of ⁸He and ⁸Li nuclei, one-prong stars with the mean range 79.5±5.1 μm of secondary slow “b” particles are found among the annihilation stars at capture on nuclei (Ag, Br). The lower limits for the production probability of _Λ⁴H and ⁸He, ⁸Li nuclei per antiproton stopping in the nuclei (Ag, Br) are

W_Λ⁴H2×10⁻⁴ and W_⁸He,⁸Li=(1.3±0.6)×10⁻³.

The branching ratio for the production of one-prong stars with the secondary “b” particles is at least (1.3±0.6)×10⁻³. Possible mechanisms for a production of these events in annihilation processes are considered.     

The structure of the surface compound CrN formed by cosegregation on a Fe–15%Cr–N(100) single crystal surface

Cosegregation is known to cause the formation of two-dimensional chemical compounds (surface compounds) which can be epitaxed to substrate surfaces of a suitable structure. In the present work the cosegregation-induced formation of the CrN surface compound on nitrided Fe–15%Cr–N(100) single crystal surfaces was studied by means of Auger electron spectroscopy and low-energy electron diffraction. Intensity versus energy spectra (I(E)) were measured and analysed fully dynamically to investigate the structural details of the CrN surface compound. It is found that nitrogen is segregated to the surface forming the sample's top layer and substantial amounts of chromium are cosegregated with nitrogen. Nitrogen atoms reside in four-fold symmetric hollow sites about 0.1 Å above the metallic substrate. There is a huge relative expansion of the distance between the first and second metal atom layers (Δd₁₂/d₀≈26%), while the distances between deeper layers are almost bulk-like. The small distance between the nitrogen and the top metal layer as well as the huge layer expansion Δd₁₂/d₀ are in agreement with results found for N/Cr(100).     

Simultaneous measurements of the p+d→(A=3)+π reactions

A stack of annular detectors made of high-purity germanium was used to measure simultaneously pd → ³H π⁺ and pd → ³He π⁰ differential cross sections at beam momenta of 750 MeV/c, 800 MeV/c, and 850 MeV/c over a large angular range. The extracted total cross sections for the pd → ³He π⁰ reactions bridge a gap between near threshold data and those in the resonance region. The ratio of the cross sections for the two reaction channels taken at the same η=p^cm_π/m_π yields 2.11±0.08 indicating that a deviation from isospin symmetry is very small.     

In situ X-ray photoelectron spectroscopy study of the oxidation of CuGaSe2

The thermal and native oxidation of CuGaSe₂ thin films was studied by in situ X-ray photoelectron spectroscopy (XPS). The special design of the XPS chamber allowed to measure XP-spectra under oxidizing gas atmospheres at pressures of up to 5 mbar (in situ) or in ultra high vacuum (UHV). During thermal oxidation, the formation of predominantly Ga₂O₃ and some amount of SeO₂ were observed, but no copper oxides could be detected in the near surface region of the thin films. The same oxides were found after native oxidation in air under ambient conditions. Only after long term native oxidation for longer than 4 months Cu(OH)₂ was detected. An additional sodium oxide compound formed at the thin film surface, Na_xO and Na₂CO₃ after thermal and native oxidation, respectively. The amount of these sodium oxide compounds depends on the Na content on the as prepared surface. The formation of SeO₂ under humid conditions at 100 °C was found to depend on the surface composition of the thin film.     

Mössbauer-effect studies of multilayers and interfaces

The usefulness of Mössbauer spectroscopy for the investigation of magnetic multilayer systems is described. By applying ⁵⁷Fe Mössbauer spectroscopy, the behavior of ultrathin magnetic layers, such as FCC-like Fe films on Cu(0 0 1), is studied. Position-specified (depth-selective) information is available by preparing samples in which monatomic ⁵⁷Fe probe layers are placed at specific vertical positions, e.g. at interfaces or at the surface. As demonstrated for epitaxial chemically ordered Fe₅₀Pt₅₀ alloy films and polycrystalline nanostructured Tb/Fe multilayers, the Fe-spin structure can be determined directly, and a site-selective Fe-specific magnetic hysteresis loop can be traced in very-high-coercivity materials. For the studies of non-magnetic layers, on the other hand, hyperfine field observations by ¹⁹⁷Au and ¹¹⁹Sn probes are worthwhile. Spin polarizations in Au layers penetrating from neighboring ferromagnetic 3D layers are estimated ¹⁹⁷Au from Mössbauer spectra and are also studied by inserted ¹¹⁹Sn probes in Au/3D multilayers. In the Sn spectra for Cr/Sn multilayers, it was found that remarkably large spin polarization is penetrating into Sn layers from a contacting Cr layer, which suggests that Cr atoms in the surface layer have a ferromagnetic alignment.     

RF-sputtered CrB2 diffusion barrier for Ni/Au Ohmic contacts on p-CuCrO2

Ohmic contacts to p-type CuCrO₂ using Ni/Au/CrB₂/Ti/Au contact metallurgy are reported. The samples were annealed in the 200–700 °C range for 60 s in flowing oxygen ambient. A minimum specific contact resistance of 2 × 10⁻⁵ Ω cm² was obtained after annealing at 400 °C. Further increase in the annealing temperature (>400 °C) resulted in the degradation of contact resistance. Auger Electron Spectroscopy (AES) depth profiling showed that out-diffusion of Ti to the surface of the contact stacks was evident by 400 °C, followed by Cr at higher temperature. The CrB₂ diffusion barrier decreases the specific contact resistance by almost two orders of magnitude relative to Ni/Au alone.