Electronic structure,optical dielectric constant and born effective charge of EuAlO3

EuAlO₃ (EAO) is synthesized by the sol–gel process. The Rietveld refinement of the X-ray diffraction data shows that the material has orthorhombic structure with Pbnm space group. The density functional theory calculations are initiated with the experimental lattice parameters. The full potential linearized augmented plane wave method and projector augmented wave method are used to investigate the ground state properties of EAO. An indirect band gap of 1.8 eV is observed with the valence band maximum at the Γ point and the conduction band minimum at the R point. The X-ray photoemission spectroscopy (XPS) spectra of EAO are obtained in the energy window of 0–1000 eV. Using the electronic density of states, the valence band (VB) spectrum of EAO is generated and compared with the observed VB-XPS spectrum. The optical dielectric constant and the refractive index of the material are calculated for the photon energy radiation. The optical properties show a considerable anisotropy in the material. The Born effective charge of various elements and the dielectric tensor of EAO have been calculated.     

Classification of hydrides according to features of band structure

Band structure of hydrides has been studied by density functional calculations. From analysis of band structures, it is found that, similar to semiconductors, some hydrides possess open fundamental band gap, and can be classified according to the following three characteristic features. The first is based on the value of the fundamental band gap and, therefore, the hydrides have been classified as narrow or wide band gap materials. The second feature is based on a comparison of the relative location in k space of the bottommost conduction band and topmost valence band (VB). Thus, hydrides can be classified as either direct or indirect band gap materials. The third feature is based on the origin of the topmost valence band and depends on the dominant contribution of s-, p-, and d-electrons to the topmost VB. According to this criterion, hydrides can be classified as type s, p, d or hybridised materials. This classification will be useful in the application of hydrides for the construction and processing of electronic devices within the framework of the recent innovations in ‘hydride electronics’.     

Zur Interpretation der Röntgenemissionsbanden von AIII BV-Verbindungen

The experimental data on the x-ray emission bands of AIII BV compounds corresponding to transitions with valence band states as initial states are compiled. The comparison of the observed emission band widths and line shapes with band structure data and also with the simple semiconductor model due to PENN shows that most of the observed structure can be explained if one assumes that the K-emission bands reflect the p-like part and the L-emission bands the s-(and d-) like parts of the total valence band state density.     

Electronic structure and optical properties of ordered compounds potassium tantalate and potassium niobate and their disordered alloys

The electronic energy band structure, site and angular momentum decomposed density of states (DOS) of cubic perovskite oxides KNbO₃ and KTaO₃ have been obtained from a first principles density functional based full potential linearized augmented plane wave (FLAPW) method within a generalized gradient approximation (GGA). The total DOS in valence region is compared with the experimental photo-emission spectra (PES). The calculated DOS is in good agreement with the experimental energy spectra and the features in the spectra are interpreted by comparison with the projected density of states (PDOS). The valence band PES is mainly composed of Nb-4d/Ta-5d and O 2p states in KNbO₃ and KTaO₃, respectively. Using the PDOS and the band structure we have analyzed the inter-band contribution to the optical properties of these materials. The real and imaginary parts of the dielectric function have been calculated and compared with experimental data. They are found to be in a reasonable agreement. The role of band structure on the optical properties have been discussed.     

Electronic structure and thermal stability of rare earth metalloporphyrins based on ytterbium

The features of the electronic structure of Yb4d, N1s, C1s, O1s, Br3d core levels and the valence band of ytterbium metalloporphyrins Yb(acac)TPPBr8, Yb(acac)TPP, TPPBr8, and TPP are studied by photoelectron spectroscopy. The position and structure of the Yb4f level for Yb(acac)TPPBr8 are determined by resonant photoemission at the BESSY-II synchrotron center. Simulations of the electronic structure of the valence band show good agreement between the calculated and experimental data. The change in the electronic structure of porphyrins during implantation of the central atom of ytterbium, namely, a more uniform redistribution of the electron density between nitrogen atoms of pyrrole and aza groups, is revealed. The photoelectron spectra of Yb4d states demonstrate the trivalent metal state (Yb³⁺) in rare-earth metalloporphyrins. The partial destruction of bromine ytterbium tetraphenylporphyrin compound as a result of thermal action is demonstrated.     

Crystal and electronic structure of solid C76

The crystal and electronic structure of solidC ₇₆ has been studied using transmission electron microscopy and electron energy-loss spectroscopy in transmission. C₇₆ forms a close packed structure with an average facecentred cubic symmetry. From valence band and core electron excitations information on the dielectric function and the unoccupied density of states has been obtained.     

The electronic structure of Ca-intercalated superconducting graphite CaC6

We have measured Ca-intercalated graphite superconductor CaC₆ (T_c = 11.2 K) by soft X-ray photoemission spectroscopy in order to understand the electronic structure. For the valence band, we observed several structures that correspond to those of calculated density of states with the partial density of states of Ca 3d at the Fermi level (E_F). We also observed core level spectra that are a very large asymmetric Ca 2p and asymmetric C 1s for CaC₆, suggesting the existence of conduction electrons derived from Ca 3d and a charge transfer from Ca to graphene layer. These results provide spectroscopic evidence for PDOS of Ca 3d at E_F. From a comparison of electronic structure of CaC₆ and other graphite intercalation compounds (GICs), we found the difference between CaC₆ and other superconducting GICs, which provides deeper understanding of the superconductivity of CaC₆.     

Electronic properties of chalcopyrite CuAlX2(X=S,Se,Te) compounds

We present results of the band structure and density of states for the chalcopyrite compounds CuAlX₂ (X=S,Se,Te) using the state-of-the-art full potential linear augmented plane wave (FP-LAPW) method. Our calculations show that these compounds are direct band gap semiconductors. The energy gap decreases when S is replaced by Se and Se replaced by Te in agreement with the experimental data. The values of our calculated energy gaps are closer to the experimental data than the previous calculations. The electronic structure of the upper valence band is dominated by the Cu-d and X-p interactions. The existence of Cu-d states in the upper valence band has significant effect on the optical band gap.     

Electronic structure and magnetic properties of Gd3Co11B4 compound

The electronic structure of hexagonal Gd₃Co₁₁B₄ compound has been studied by X-ray photoemission spectroscopy (XPS) and ab initio self-consistent tight binding linear muffin tin orbital (TB LMTO) method. We have found a good agreement between the experimental XPS valence band spectra and theoretical LMTO calculations. Results showed that the Gd₃Co₁₁B₄ compound is ferrimagnetic with the calculated total magnetic moment M=14.29 μ_B/f.u. The values of the magnetic moments on Co atoms strongly depend on the local environment. We have also compared the electronic structure and magnetic properties of Gd₃Co₁₁B₄ compound with those of Nd₃Co₁₁B₄ compound.     

Electronic structure of wurtzite and zinc-blende AlN

The electronic structure of AlN in wurtzite and zinc-blende phases is studied experimentally and theoretically. By using X-ray emission spectroscopy, the Al 3p, Al 3s and N 2p spectral densities are obtained. The corresponding local and partial theoretical densities of states (DOS), as well as the total DOS and the band structure, are calculated by using the full potential linearized augmented plane wave method, within the framework of the density functional theory. There is a relatively good agreement between the experimental spectra and the theoretical DOS, showing a large hybridization of the valence states all along the valence band. The discrepancies between the experimental and theoretical DOS, appearing towards the high binding energies, are ascribed to an underestimation of the valence band width in the calculations, or to extra states in the optical and ionic gaps due to the presence of point defects or impurities. Differences between the wurtzite and zinc-blende phases are small and reflect the slight variations between the atomic arrangements of both phases.Received: 25 October 2004, Published online: 23 December 2004PACS: 78.70.En X-ray emission spectra and fluorescence - 71.20.Nr Semiconductor compounds - 71.15.Mb Density functional theory, local density approximation, gradient and other corrections     

Ab initio calculations study of the electronic, optical and thermodynamic properties of NaMgH3, for hydrogen storage

The structural stability, electronic structure, optical and thermodynamic properties of NaMgH₃ have been investigated using the density functional theory. Good agreement is obtained for the bulk crystal structure using both the local density approximation (LDA) and the generalized gradient approximation (GGA) for the exchange-correlation energy. It is found from the electronic density of states (DOS) that the valence band is dominated by the hydrogen atoms while the conduction band is dominated by Na and Mg empty states. Also, the DOS reveals that NaMgH₃ is a large gap insulator with direct band gap 3.4 eV. We have investigated the optical response of NaMgH₃ in partial band to band contributions and the theoretical optical spectrum is presented and discussed in this study. Optical response calculation suggests that the imaginary part of dielectric function spectra is assigned to be the interband transition. The formation energy for NaMgH₃ is investigated along different reaction pathways. We compare and discuss our result with the measured and calculated enthalpies of formation found in the literature.     

First principles study of the electronic and optical properties of SbTaO4

The electronic density of states (DOS), band structure and optical properties of orthorhombic SbTaO₄ are studied by first principles full potential-linearized augmented plane wave (FP-LAPW) method. The calculation is done in the framework of density functional theory with the exchange and correlation effects treated using generalized gradient approximation (GGA). We find an indirect band gap of 1.9 eV at the R→Γ symmetry direction of the Brillouin zone in SbTaO₄. It is observed that there is a strong hybridization between Ta-5d and O-2p electronic states which is responsible for the electronic properties of the system. Using the projected DOS and band structure we have analyzed the interband contribution to the optical properties of SbTaO₄. The real and imaginary parts of the dielectric function of SbTaO₄ are calculated, which correspond to electronic transitions from the valence band to the conduction band. The band gap obtained is in close agreement with the experimental data.     

Specific features of the electronic structure of the CeCu<Subscript>6</Subscript>, CePd<Subscript>3</Subscript>, CeSi<Subscript>2</Subscript>, and CeF<Subscript>3</Subscript> systems

The electronic structure of cerium systems, the hybridization of 4 f and outer-shell electrons, and the influence of the position of the localized 4 f level with respect to the Fermi level E _F in the conduction band have been investigated. The CeCu₆, CePd₃, CeSi₂, and CeF₃ systems have been studied using X-ray photoelectron spectroscopy. The densities of states have been calculated by the tight-binding linearized muffin-tin orbital method within the atomic sphere approximation, which takes into account the covalent character of bonds and the nonspherical distribution of the electron density. The results obtained from the calculations of the total density of states are in good agreement with the valence band X-ray photoelectron data for the systems under investigation. It has been shown that the differences in the properties of the cerium systems are determined by the specific features of their electronic structure. A strong interatomic interaction is characteristic of heavy-fermion systems.     

The electronic structure of cobalt(II) phthalocyanine adsorbed on Ag(111)

The electronic states of submonolayers and multilayers of cobalt(II) phthalocyanine (CoPc) adsorbed on Ag(111) were examined with photoelectron spectroscopy to obtain insight into the details of the substrate–adsorbate interaction. UV photoelectron spectroscopy (UPS) reveals the presence of two interaction-related valence states in the direct vicinity of the Fermi edge, in agreement with previous DFT calculations. X-ray photoelectron spectra indicate that the substrate–adsorbate interaction results in transfer of electron density from the substrate to the Co(II) ion. Substantial changes in the Co 2p multiplet structure, a spectral pattern induced by the open-shell character of the central Co(II) ion, indicate a complete quenching of the molecular spin. While pristine CoPc molecules are paramagnetic with S = 1/2, molecules in direct contact to the Ag(111) substrate appear to be in a diamagnetic state.     

LiGaX2(X=S,Se, Te)的电子结构,光学和弹性性质的第一性原理计算

采用基于第一性原理的密度泛函理论赝势平面波方法,对LiGaX₂(X=S, Se, Te)的能带结构、态密度、光学以及弹性性质进行了理论计算. 能带结构计算表明LiGaS₂ 的禁带宽度为4.146 eV, LiGaSe₂ 的禁带宽度为3.301 eV, LiGaTe₂ 的禁带宽度为2.306 eV; 其价带主要由Ga-4p 层电子和X- np 层电子的能态密度决定; 同时也对LiGaX< 关键词： 电子结构 光学性质 弹性性质 LGX     

Electronic properties of orthorhombic LiGaS<Subscript>2</Subscript> and LiGaSe<Subscript>2</Subscript>

We report theoretical calculations of the band structure and density of states for orthorhombic LiGaS₂ (LGS) and LiGaSe₂ (LGSe). These calculations are based on the full potential linear augmented plane wave (FP-LAPW) method within a framework of density functional theory. Our calculations show that these crystals have similar band structures. The valence band maximum (VBM) and the conduction band minimum (CBM) are located at Γ, resulting in a direct energy band gap. The VBM is dominated by S/Se-p and Li-p states, while the CBM is dominated by Ga-s, S/Se-p and small contributions of Li-p and Ga-p. From the partial density of states we find that Li-p hybridizes with Li-s below the Fermi energy (E _F), while Li-s/p hybridizes with Ga-p below and above E _F. Also, we note that S/Se-p hybridizes with Ga-s below and above E _F.     

DFT study on electronic structure and optical properties of N-doped,S-doped,and N/S co-doped SrTiO3

The electronic structures and optical properties of N-doped, S-doped and N/S co-doped SrTiO₃ have been investigated on the basis of density functional theory (DFT) calculations. Through band structure calculation, the top of the valence band is made up of the O 2p states for the pure SrTiO₃. When N and S atoms were introduced into SrTiO₃ lattice at O site, the electronic structure analysis shows that the doping of N and S atoms could substantially lower the band gap of SrTiO₃ by the presence of an impurity state of N 2p on the upper edge of the valence band and S 2p states hybrid with O 2p states, respectively. When the N/S co-doped, the energy gap has further narrowing compared with only N or S doped SrTiO₃. The calculations of optical properties also indicate a high photo response for visible light for N/S co-doped SrTiO₃. Besides, we find a new impurity state which separates from the O 2p states could improve the photocatalytic efficiency and we also propose a model for light electron-hole transportation which can explain the experiment results well. All these conclusions are in agreement with the recent experimental results.     

Electronic structure and hot carrier relaxation in ⟨001⟩ anatase TiO2 nanowire

We present an electronic structure and non-adiabatic excited state dynamics study of ?001? anatase TiO₂ nanowire (NW) by combining density matrix formalism and ab initio electronic structure calculations. Our results show that quantum confinement increases the energy gap as the dimension of TiO₂ is reduced from the bulk to a NW with a diameter of several nanometres and that the probability of electronic transitions induced by lattice vibrations for the NW follows band gap law. The electron non-radiative relaxation to the bottom of the conduction band is involving Ti 3d orbitals, while the hole non-radiative relaxation of holes to the top of the valence band occurs by subsequent occupation of O 2p orbitals.