共查询到20条相似文献,搜索用时 15 毫秒
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用射频、直流磁控溅射和多弧离子镀制备一系列类金刚石(DLC)薄膜样品,并测量了样品的拉曼光谱.通过数据分析发现三种沉积方式中多弧离子镀沉积得到的薄膜含有更高的sp3含量.采用多弧离子镀设备,在不同的溅射负偏压下沉积了一系列的DLC薄膜样品,对样品进行拉曼光谱测试,通过对比分析发现随着沉积负偏压的提高,薄膜内sp3的含量不断提高.表明可以通过提高多弧离子镀的负偏压来提高DLC薄膜的质量. 相似文献
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Streletskii O. A. Zavidovskii I. A. Nishchak O. Yu. Shchegolikhin A. N. Savchenko N. F. 《Physics of the Solid State》2020,62(11):2184-2190
Physics of the Solid State - Films obtained by radio-frequency sputtering of monocrystalline polydiacetylene (PDA) are under study. The structure is studied by Raman spectroscopy, transmission... 相似文献
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利用直流磁控溅射方法,以Ar/N2作为放电气体,通过改变放电气体中N2的流量(N2流量比分别为5%,10%,30%,50%)及溅射时间(160,30,20,10,5min),在玻璃衬底上沉积了FexN薄膜。用X射线光电子能谱(XPS)方法确定了不同N2流量下薄膜的成分;X射线衍射(XRD)方法分析了不同N2流量下的FexN薄膜结构,当N2流量比为5%时获得了FeN0 056相,10%时为ε Fe3N相,30%和50%流量比下均得到FeN相。利用原子力显微镜(AFM)和掠入射X射线散射(GIXA)方法研究了膜表面的粗糙度和形貌,发现随着N2流量的增加,薄膜表面光滑度增加,薄膜表面呈现自仿射性质。动力学标度方法定量分析表明:薄膜表面因不同N2流量的影响而具有不同的动力学指数,当氮气流量比为5%时,静态标度指数α≈0 65,生长指数β≈0 53±0 02,薄膜生长符合基于Kolmogorov提出的能量波动概念的KPZ模型指数规律。 相似文献
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Electrically Tunable Wafer-Sized Three-Dimensional Topological Insulator Thin Films Grown by Magnetron Sputtering 下载免费PDF全文
Three-dimensional(3 D) topological insulators(TIs) are candidate materials for various electronic and spintronic devices due to their strong spin-orbit coupling and unique surface electronic structure.Rapid,low-cost preparation of large-area TI thin films compatible with conventional semiconductor technology is the key to the practical applications of TIs.Here we show that wafer-sized Bi2 Te3 family TI and magnetic TI films with decent quality and well-controlled compositio... 相似文献
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SHAO Jian-da FAN Zheng-xiu YI Kui YIN Gong-jie YUAN Lixiang 《Chinese Journal of Lasers》1994,3(1):69-75
FabricationandThicknessMeasurmentoftheThinFilmsDepositedbyPlanarMagnetronSputtering¥SHAOJian-da;FANZheng-xiu;YIKui;YINGong-ji... 相似文献
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Growth and Characterization of CIS Thin Films Prepared by Ion Beam Sputtering Deposition 总被引:1,自引:0,他引:1 下载免费PDF全文
Copper indium diselenide (CuInSe2) thin films were prepared by ion beam sputtering Cu, In and Se targets continuously on BK7 glass substrates and the three-layer film was then annealed in the same vacuum chamber. X-ray diffraction shows that the CuInSe2 thin films have a single chalcopyrite structure with preferential (112) orientation. Scanning electron microscopy reveals that the CIS thin films consist of uniform and densely packed grain clusters. Energy dispersive x-ray spectroscopy demonstrates that the elemental composition of CIS films approaches the stochiometric composition ratios of 1:1:2. Raman measurement shows that the main peak is at about 174cm^-1 and this peak is identified as the A1 vibrational mode from chaicopyrite ordered CulnSe2. Optical transmission and absorption spectroscopy measurement reveal an energy band gap of about 1.05 eV and an absorption coefficient of 10^5 cm^-1. The film resistivity is about 0.01 Ωcm. 相似文献
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Petrus R. Yu. Ilchuk H. A. Kashuba A. I. Semkiv I. V. Zmiiovska E. O. 《Optics and Spectroscopy》2019,126(3):220-225
Optics and Spectroscopy - The results of experimental and theoretical studies of the optical-energy properties of CdS thin films are reported. The synthesis procedure and the results of structural... 相似文献
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用射频反应磁控溅射法在不同溅射压强和氩氧比下制备了ZnO薄膜,通过X射线衍射(XRD)、扫描电镜(SEM)和光致发光(PL)谱等研究了溅射压强和氩氧比对ZnO薄膜结构和光学性质的影响。测量结果显示,所制备的ZnO薄膜为六角纤锌矿结构,具有沿c轴的择优取向;溅射压强P=0.6Pa,氩氧比Ar/O2=20/5.5sccm时,(002)晶面衍射峰强度和平均晶粒尺寸较大,(O02)XRD峰半峰全宽(FWHM)最小,光致发光紫外峰强度最强。 相似文献
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用直流磁控溅射技术在石英基片上制备不同厚度(5 nm~114 nm之间)的铬膜.使用X射线衍射仪和分光光度计分别检测薄膜的结构和光学性质,利用德鲁特模型和薄膜的透射、反射光谱计算铬膜的厚度和光学常量,并采用Van der Pauw方法测量薄膜电学性质.结果表明:制备的铬薄膜为体心立方的多晶态,随着膜厚的增加,薄膜的结晶性能提高,晶粒尺寸增大;在可见光区域,当膜厚小于32 nm时,随着膜厚的增加,折射率快速减小,消光系数快速增大,当膜厚大于32 nm时,折射率和消光系数均缓慢减小并逐渐趋于稳定;薄膜电阻率随膜厚的增加为一次指数衰减. 相似文献
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用直流磁控溅射技术在石英基片上制备不同厚度(5nm~114nm之间)的铬膜.使用X射线衍射仪和分光光度计分别检测薄膜的结构和光学性质,利用德鲁特模型和薄膜的透射、反射光谱计算铬膜的厚度和光学常量,并采用Van der Pauw方法测量薄膜电学性质.结果表明:制备的铬薄膜为体心立方的多晶态,随着膜厚的增加,薄膜的结晶性能提高,晶粒尺寸增大;在可见光区域,当膜厚小于32nm时,随着膜厚的增加,折射率快速减小,消光系数快速增大,当膜厚大于32nm时,折射率和消光系数均缓慢减小并逐渐趋于稳定;薄膜电阻率随膜厚的增加为一次指数衰减. 相似文献
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通过射频磁控溅射技术在Si(111)衬底上制备了未掺杂ZnO薄膜和Nd掺杂ZnO薄膜。应用XRD分析了ZnO:Nd薄膜的晶格结构,通过AFM观察了ZnO:Nd薄膜的表面形貌。结果表明,Nd掺入了ZnO晶格中,由于Nd原子半径大于Zn原子半径,Nd以替位原子的形式存在于ZnO晶格中。ZnO:Nd薄膜为纳米多晶薄膜,表面形貌粗糙。ZnO:Nd薄膜的室温光致发光谱表明,相同条件下制备的未掺杂ZnO薄膜和Nd掺杂ZnO薄膜都出现了395nm的强紫光带和495nm的弱绿光带。我们认为,紫光发射峰窄而锐且强度远大于绿光峰,源于薄膜中激子复合;绿光峰强度较弱,源于薄膜中的氧空位(VO)及氧反位锌缺陷(OZn)。Nd掺杂没有影响ZnO:Nd薄膜的PL谱的发射峰的峰位。由于Nd3 离子电荷数与Zn2 离子电荷数不相等,为了保持ZnO薄膜的电中性,间隙锌(VZn)可以作为Nd替位补偿性的受主杂质而存在,影响ZnO薄膜的激子浓度。同时,Nd掺入使ZnO的晶格畸变缺陷浓度改变增强,因而发射峰的强度随Nd掺杂浓度不同而变化。 相似文献
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采用反应性磁控溅射法制备了NiOx薄膜,并结合椭圆偏振仪、XRD和XPS研究了溅射参量对其光学常量的影响.NiOx薄膜的光学常量随着O2/Ar流量比的增大而减小;热退火后,折射率增大而消光系数下降了50%;溅射功率越大折射率也越大,而工作气压越大折射率反而越小.这些变化分别与薄膜中存在间隙O和Ni空位、NiOx分解以及NiOx薄膜的致密度有关. 相似文献
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Optimization of Gas Sensing Performance of Nanocrystalline SnO_2 Thin Films Synthesized by Magnetron Sputtering 下载免费PDF全文
《中国物理快报》2016,(6)
Tin oxide(SnO_2) is one of the most promising transparent conducting oxide materials,which is widely used in thin film gas sensors.We investigate the dependence of the deposition time on structural,morphological and hydrogen gas sensing properties of SnO_2 thin films synthesized by dc magnetron sputtering.The deposited samples are characterized by XRD,SEM,AFM,surface area measurements and surface profiler.Also the H_2 gas sensing properties of SnO_2 deposited samples are performed against a wide range of operating temperature.The XRD analysis demonstrates that the degree of crystallinity of the deposited SnO_2 films strongly depends on the deposition time.SEM and AFM analyses reveal that the size of nanoparticles or agglomerates,and both average and rms surface roughness is enhanced with the increasing deposition time.Also gas sensors based on these SnO_2 nanolayers show an acceptable response to hydrogen at various operating temperatures. 相似文献
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Compositional and Structural Properties of TiO2-xNx Thin Films Deposited by Radio-Frequency Magnetron Sputtering 下载免费PDF全文
TiO2-xNx thin films are deposited onto Si(100) and quartz substrates by arf magnetron sputtering method using a titanium metal disc as a target in Ar, N2, and 02 atmospheres. The substrate temperature is kept at 300℃. The O2 and Ar gas flow rates are kept to be constants and the N gas flow rate is varied. TiO2-xNx films with different N contents are characterized by x-ray diffraction and x-ray photoelectron spectroscopy. The results indicate that the TiO2-xNx thin films can be obtained at 13% N and 15% N contents in the film, and the films with mixed TiO2 and TiN crystal can be obtained at 13% N and 15% N contents in the film. In terms of the results of x-ray photoelectron spectroscopy, N ls of β-N (396 eV) is the main component in the TiO2-xNx thin films. Because the energy level of β-N is positioned above the valence-band maximum of TiO2, an effective optical-energy gap decreases from 2.8 eV (for pure TiO2 film deposited by the same rf sputtering system) to 2.3 eV, which is verified by the optical-absorption spectra. 相似文献