Role of reaction atmosphere in preparation of potassium tantalate through sol–gel method

Potassium tantalate (KT) thin films and powders of both K₂Ta₂O₆ (KT pyrochlore) and KTaO₃ (KT perovskite) structures were prepared by means of chemical solution deposition method using Si(111) with ZnO and MgO buffer layers as a substrate. The influence of reaction atmosphere on reaction pathway and phase composition for both KT powders, and KT thin films has been studied mainly by means of powder diffraction and infrared spectroscopy. When an oxygen flow instead of static air atmosphere has been used the process of pyrolysis in oxygen runs over much narrower temperature interval (200–300 °C), relatively to air atmosphere (200–600 °C) and almost no (in case of powders), or no (in case of thin films) pyrochlore intermediate phase has been detected in comparison with treatment in air, where the pyrochlore phase is stable at temperatures 500–600 °C (powders). KT perovskite phase starts to crystallize at temperatures 50° and 150 °C lower compared to air atmosphere in case of powders and thin films, respectively. Microstructure formed by near-columnar grains and small grains of equiaxed shape was observed in films treated in oxygen and air atmosphere, respectively.     

Deposition of copper‐doped iron sulfide (CuxFe1−xS) thin films using aerosol‐assisted chemical vapor deposition technique

Copper‐doped iron sulfide (Cu_xFe_1?xS, x = 0.010–0.180) thin films were deposited using a single‐source precursor, Cu(LH)₂Cl₂ (LH = monoacetylferrocene thiosemicarbazone), by aerosol‐assisted chemical vapor deposition technique. The Cu‐doped FeS thin films were deposited at different substrate temperatures, i.e. 250, 300, 350, 400 and 450 °C. The deposited thin films were characterized by X‐ray diffraction (XRD) patterns, Raman spectra, scanning electron microscopy, energy dispersive X‐ray analysis (EDX) and atomic force microscopy. XRD studies of Cu‐doped FeS thin films at all the temperatures revealed formation of single‐phase FeS structure. With increasing substrate temperature from 250 to 450 °C, there was change in morphology from wafer‐like to cylindrical plate‐like. EDX analysis showed that the doping percentage of copper increased as the substrate temperature increased from 250 to 450 °C. Raman data supports the doping of copper in FeS films. Copyright © 2010 John Wiley & Sons, Ltd.     

Substrate temperature effects on the structural,compositional, and electrical properties of VO2 thin films deposited by pulsed laser deposition

The vanadium dioxide (VO₂) thin films were deposited on silicon (100) substrate using the pulsed laser deposition technique. The thin films were deposited at different substrate temperatures (500°C, 600°C, 700°C, and 800°C) while keeping all the other parameters constant. X‐ray diffraction confirmed the crystalline VO₂ (B) and VO₂ (M) phase formation at different substrate temperatures. X‐ray photoelectron spectroscopy analysis showed the presence of V⁴⁺ and V⁵⁺ charge states in all the deposited thin films which confirms that the deposited films mainly consist of VO₂ and V₂O₅. An increase in the VO₂/V₂O₅ ratio has been observed in the films deposited at higher substrate temperatures (700°C and 800°C). Scanning electron microscope micrographs revealed different surface morphologies of the thin films deposited at different substrate temperatures. The electrical properties showed the sharp semiconductor to metal transition behavior with approximately 2 orders of magnitude for the VO₂ thin film deposited at 800°C. The transition temperature for heating and cooling cycles as low as 46.2°C and 42°C, respectively, has been observed which is related to the smaller difference in the interplanar spacing between the as‐deposited thin film and the standard rutile VO₂ as well as to the lattice strain of approximately −1.2%.     

Characterisation and properties of magnetron sputtered nanoscale bi‐layered Ni/Ti thin films and effect of annealing

Single‐bi‐layer of Ni–Ti thin film was deposited using DC and RF magnetron sputtering technique by layer‐wise deposition of Ni and Ti on Si(100) substrate in the order of Ni as the bottom layer and Ti as the top layer. The deposition of these amorphous as‐deposited thin films was followed by annealing at 300 °C, 400 °C, 500 °C, and 600 °C temperature with 1‐h annealing time for each to achieve crystalline thin films. This paper describes the fabrication processes and the novel characterization techniques of the as‐deposited as well as the annealed thin films. Microstructures were analysed using FESEM and HRTEM. Nano‐indentation and AFM were carried out to characterize the mechanical properties and surface profiles of the films. It was found that, for the annealing temperatures of 300 °C to 600 °C, the increase in annealing temperature resulted in gradual increase in atomic‐cluster coarsening with improved ad‐atom mobility. Phase analyses, performed by GIXRD, showed the development of silicide phases and intermetallic compounds. Cross‐sectional micrographs exhibited the inter‐diffusion between the two‐layer constituents, especially at higher temperatures, which resulted either in amorphization or in crystallization after annealing at temperatures above 400 °C. Copyright © 2015 John Wiley & Sons, Ltd.     

Structure and voltage tunable dielectric properties of sol–gel derived Bi1.5MgNb1.5O7 thin films

Bi_1.5MgNb_1.5O₇ (BMN) thin films were fabricated on Au/Ti/SiO₂/Si(100) substrates using a sol?Cgel spin coating process. Thermo decomposition of the BMN precursor gel was discussed. The structures, morphologies, dielectric properties and voltage tunable dielectric properties were investigated. The deposited films showed a cubic pyrochlore structure after annealing at 550?°C or higher temperatures. With the annealing temperature increased from 500 to 800?°C, the root-mean-square surface roughness of the films increased from 0.6 to 6.8?nm. Additional phase, MgNb₂O₆, emerged after annealing at 800?°C due to the volatilization of Bi element. The dielectric properties and tunability of the films were annealing temperature dependent. BMN thin films annealed at 750?°C had a high dielectric constant of 135 and low dielectric loss of 0.002 at 1?MHz. The high tunability of 31.3?% and figure of merit of 156.5 were obtained under an applied electric field of 1?MV/cm at room temperature.     

Sensor Performance of Nanostructured TiO<Subscript>2</Subscript>–SnO<Subscript>2</Subscript> Films Prepared by an Aqueous Sol–Gel Process

Nanostructured TiO₂–SnO₂ thin films and powders were prepared by a facile aqueous particulate sol–gel route. The prepared sols showed a narrow particle size distribution with hydrodynamic diameter in the range 17.2–19.3 nm. Moreover, the sols were stable over 5 months, since the constant zeta potential was measured during this period. The effect of Sn:Ti molar ratio was studied on the crystallisation behaviour of the products. X-ray diffraction analysis revealed that the powders were crystallised at the low temperature of 400 °C containing anatase-TiO₂, rutile-TiO₂ and cassiterite-SnO₂ phases, depending on annealing temperature and Sn:Ti molar ratio. Furthermore, it was found that SnO₂ retarded the anatase to rutile transformation up to 800 °C. The activation energy of crystallite growth was calculated in the range 0.96–6.87 kJ/mol. Transmission electron microscope image showed that one of the smallest crystallite sizes was obtained for TiO₂–SnO₂ binary mixed oxide, being 3 nm at 600 °C. Field emission scanning electron microscope analysis revealed that the deposited thin films had nanostructured morphology with the average grain size in the range 20–40 nm at 600 °C. Thin films produced under optimized conditions showed excellent microstructural properties for gas sensing applications. They exhibited a remarkable response towards low concentrations of CO gas at low operating temperature of 200 °C, resulting in increased thermal stability of sensing films as well as a decrease in their power consumption.     

Synthesis of Cu2Mo6S8 powders and thin films from intermediate oxides prepared by polymeric precursor method

Powders and thin films of the copper molybdenum sulfide Cu₂Mo₆S₈ were synthesized from intermediate oxides prepared by polymeric precursor method based on Pechini process. In the case of the thin films, deposition was performed onto R-plane sapphire single crystal by spin coating. The influence of temperature and duration of the 3 step heat treatment cycle (calcination, sulfurization and reduction) were investigated to optimize the synthesis conditions. The first step of calcination under air atmosphere performed for 3 h at 450 °C and 400 °C is suitable to obtain the intermediate oxides powders and thin films, respectively. The sulfurization treatment at 600 °C for 2 h under H₂S/H₂ gas flow followed by reduction at 650 °C for 4 h under H₂ gas flow allowed to obtain Cu₂Mo₆S₈ in powder or thin film form. In the last case, a multilayer process led to dense and homogeneous films. Moreover, the insertion and superconducting behaviour of the final powders allowed to validate the Cu₂Mo₆S₈ synthesis by this moderate temperature process.     

Synthesis of highly pure nanocrystalline and mesoporous CaTiO3 by a particulate sol–gel route at the low temperature

The low temperature perovskite-type calcium titanate (CaTiO₃) thin films and powders with nanocrystalline and mesoporous structure were prepared by a straightforward particulate sol–gel route. The prepared sol had a narrow particle size distribution about 17 nm. X-ray diffraction and Fourier transform infrared spectroscopy revealed that, the synthesized powders had highly pure and crystallized CaTiO₃ structure with preferable orientation growth along (1 2 1) direction at 400–800 °C. The activation energy of crystal growth was calculated 5.73 kJ/mol. Furthermore, transmission electron microscope images showed that the average crystallite size of the powders annealed at 400 °C was around 3.5 nm. Field emission scanning electron microscope analysis and atomic force microscope images revealed that, the deposited thin films had uniform, mesoporous and nanocrystalline structure with the average grain size in the range 33–39 nm depending on annealing temperature. Based on Brunauer–Emmett–Teller (BET) analysis, the synthesized powders showed mesoporous structure with BET surface area in the range 51–21 m²/g at 400–800 °C. One of the smallest crystallite size and one of the highest surface areas reported in the literature is obtained which can be used in many applications, such as photocatalysts.     

Structure and optical properties of CVD molybdenum oxide films for electrochromic application

Vibrational and optical properties of MoO₃ thin films have been studied by Raman and infrared spectroscopy. The films were deposited onto Si substrates at a temperature of 150 °C by chemical vapor deposition of Mo(CO)₆ at atmospheric pressure and different amounts of oxygen in the reactor. The Raman and IR spectral analyses show that the as-deposited films are in general amorphous. Post-deposition annealing at 300 and 400 °C leads to crystallization and the MoO₃ film structure is a mixture of orthorhombic and monoclinic MoO₃ modifications. Transformation of the monoclinic crystallographic modification to a thoroughly orthorhombic layered structure is observed for films heated at temperatures above 400 °C. Electronic Publication     

Spectroscopic ellipsometry study of CVD molybdenum oxide films: effect of temperature

The optical properties of CVD MoO₃ films were studied by ellipsometry in the spectral range 280–820 nm. The films were deposited on silicon substrates by pyrolytic decomposition at atmospheric pressure of Mo(CO)₆ at 150 and 200 °C. To optimize the film structure, annealing was performed at temperatures of 300 and 400 °C. The refractive index for as-deposited MoO₃ films varies within 1.8–2.2 and the optical band gap energies in the range 2.87–2.98 eV. After annealing, the latter values slightly increase to 2.85–3.05 eV, depending on the annealing temperature. The band gap energies are typical for a polycrystalline material. Peaks in the spectral dependence of the absorption coefficient were observed. Their position and intensity are found to be affected by the process temperature. Electronic Publication     

Structure and dielectric properties of HfO<Subscript>2</Subscript> films prepared by a sol–gel route

Mono- and multilayer HfO₂ sol–gel thin films have been deposited on silicon wafers by dip-coating technique using a solution based on hafnium ethoxide as precursor. The densification/crystallization process was achieved by classical annealing between 400 and 600 °C for 0.5 h (after drying at 100 °C). Systematic TEM studies were performed to observe the evolution of the thin film structure depending on the annealing temperature. The overall density of the films was determined from RBS spectrometry correlated with cross section (XTEM) thickness measurements. After annealing at 450 °C the films are amorphous with a nanoporous structure showing also some incipient crystallization. After annealing at 550 °C the films are totally crystallized. The HfO₂ grains grow in colonies having the same crystalline orientation with respect to the film plane, including faceted nanopores. During annealing a nanometric SiO₂ layer is formed at the interface with the silicon substrate; the thickness of this layer increases with the annealing temperature. Capacitive measurements allowed determining the value of the dielectric constant as 25 for four layer films, i.e. very close to the value for the bulk material.     

Determination of the cubic to hexagonal structure transition in the metastable system TiN-AlN

Structural transitions of metastable Ti_1–xAl_xN coatings on technically relevant substrates were determined as a function of the Ti/Al ratio. Ti_1–xAl_xN films with different Ti/Al ratios were deposited on high speed steel (HSS) substrates at substrate temperatures of 300?° and 500?°C by means of reactive magnetron sputtering ion plating (MSIP). A Ti/Al compound target was used as well as a cluster arrangement of one Ti and one Al target for comparison. The composition of the films was determined by electron probe microanalysis (EPMA), the crystallographic structure by thin film X-ray diffraction (XRD). The analyses revealed that films deposited with Ti/Al ratios of 44/56 and 36/64 had grown in cubic NaCl structure, a film with a Ti/Al ratio of 32/68 was two-phase, and a Ti/Al ratio of 25/75 led to a hexagonal film in wurtzite structure. Only small differences of the lattice parameters could be observed in dependence of temperature: At 300?°C the lattice parameters of the cubic structure corresponded exactly to Vegard‘s law, whereas they slightly decreased in the films deposited at 500?°C. The application of a cluster arrangement instead of a compound target resulted in nearly the same lattice parameters and peak shapes.     

Mesoporous and nanocrystalline sol–gel derived NiTiO3 at the low temperature: Controlling the structure,size and surface area by Ni:Ti molar ratio

Nanocrystalline nickel titanate (NiTiO₃) thin films and powders with mesoporous structure were produced at the low temperature of 500 °C by a straightforward particulate sol–gel route. The sols were prepared in various Ni:Ti molar ratios. X-ray diffraction and Fourier transform infrared spectroscopy revealed that the powders contained mixtures of the NiTiO₃ and NiO phases, as well as the anatase-TiO₂ and the rutile-TiO₂ depending on the annealing temperature and Ni:Ti molar ratio. Moreover, it was found that Ni:Ti molar ratio influences the preferable orientation growth of the nickel titanate, being on (202) planes for the nickel dominant powders (Ni:Ti ≥ 75:25) and on (104) planes for the rest of the powders (Ni:Ti: ≤ 50:50). The average crystallite size of the powders annealed at 500 °C was in the range 1.5–2.4 nm and a gradual increase occurred up to 8 nm by heat treatment at 800 °C. The activation energy of crystal growth decreased with an increase of Ni:Ti molar ratio, calculated in the range 24.93–37.17 kJ/mol. Field emission scanning electron microscope analysis revealed that the deposited thin films had mesoporous and nanocrystalline structure with the average grain size of 20–35 nm. Moreover, atomic force microscope images presented that the thin films had a hill-valley like morphology with roughness mean square in the range 41–57 nm. Based on Brunauer–Emmett–Taylor analysis, the synthesized powders showed mesoporous structure containing pores with needle and plate like shapes. The mesoporous structure of the powders was stable at high annealing temperatures and one of the highest surface areas (i.e., 156 m²/g) reported in the literature was obtained for the powder containing Ni:Ti = 50:50 at 500 °C.     

Low temperature nanostructured lithium titanates: controlling the phase composition, crystal structure and surface area

Low temperature lithium titanate compounds (i.e., Li₄Ti₅O₁₂ and Li₂TiO₃) with nanocrystalline and mesoporous structure were prepared by a straightforward aqueous particulate sol–gel route. The effect of Li:Ti molar ratio was studied on crystallisation behaviour of lithium titanates. X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR) revealed that the powders were crystallised at the low temperature of 500 °C and the short annealing time of 1 h. Moreover, it was found that Li:Ti molar ratio and annealing temperature influence the preferable orientation growth of the lithium titanate compounds. Transmission electron microscope (TEM) images showed that the average crystallite size of the powders annealed at 400 °C was in the range 2–4 nm and a gradual increase occurred up to 10 nm by heat treatment at 800 °C. Field emission scanning electron microscope (FE-SEM) analysis revealed that the deposited thin films had mesoporous and nanocrystalline structure with the average grain size of 21–28 nm at 600 °C and 49–62 nm at 800 °C depending upon the Li:Ti molar ratio. Moreover, atomic force microscope (AFM) images confirmed that the lithium titanate films had columnar like morphology at 600 °C, whereas they showed hill-valley like morphology at 800 °C. Based on Brunauer–Emmett–Taylor (BET) analysis, the synthesized powders showed mesoporous structure containing pores with needle and plate shapes. The surface area of the powders was enhanced by increasing Li:Ti molar ratio and reached as high as 77 m²/g for the ratio of Li:Ti = 75:25 at 500 °C. This is one of the smallest crystallite size and the highest surface areas reported in the literature, and the materials could be used in many applications such as rechargeable lithium batteries and tritium breeding materials.     

Effect of adhesive and cohesive strength on the tribological behaviour of non‐reactively sputtered TiC thin films

Titanium carbide (TiC) thin films were deposited on D9 steel substrates at room temperature (RT), 200 °C and 400 °C. A compound TiC target was sputtered to deposit films in a non‐reactive argon atmosphere. As‐deposited films were characterised for structural, chemical and mechanical properties. Nanoindentation and scratch tests were performed to evaluate the cohesive and adhesive strength of the films, respectively. Tribological properties of the films were investigated using a tribometer. An increase in nano‐hardness from 7.2 to 10.5 GPa was observed as deposition temperature was increased. The films deposited at RT and 200 °C showed poor adhesion leading to the inferior tribological performance. In contrast, films deposited at 400 °C showed better adhesion which improved the wear resistance. Tribological behaviour of TiC thin films was correlated with contact deformation modes of coatings. These modes revealed significant role of adhesive and cohesive strength associated with the coatings. Copyright © 2009 John Wiley & Sons, Ltd.     

50 keV H+ ion beam irradiation of Al doped ZnO thin films: Studies of radiation stability for device applications

Thin films of Al doped ZnO (Al:ZnO) were deposited on two substrates (Si and glass) at room temperature and 300°C using DC magnetron sputtering. These films were bombarded with 50 keV H⁺ beam at several fluences. The pristine and ion beam irradiated films were analysed by X‐ray diffraction, Raman spectroscopy, scanning electron microscopy, and UV‐Vis spectroscopy. The X‐ray diffraction analysis, Hall measurements, Raman and UV‐Vis spectroscopy confirm that the structural and transport properties of Al:ZnO films do not change substantially with beam irradiation at chosen fluences. However, in comparison to film deposited at room temperature, the Al:ZnO thin film deposited at 300°C shows increased transmittance (from 70% to approximately 90%) with ion beam irradiation at highest fluence. The studies of surface morphology by scanning electron microscopy reveal that the ion irradiation yields smoothening of the films, which also increases with ion fluences. The films deposited at elevated temperature are smoother than those deposited at room temperature. In the paper, we discuss the interaction of 50 keV H⁺ ions with Al:ZnO films in terms of radiation stability in devices.     

Electrochromic properties of sputtered TiO2 thin films

TiO₂ thin films were deposited on ITO/Glass substrates by the rf magnetron sputtering in this study. The electrochromic properties of TiO₂ films were investigated using cyclic voltammograms (CV), which were carried out on TiO₂ films immersed in an electrolyte of 1 M LiClO₄ in propylene carbonate (PC). As- deposited TiO₂ thin film was amorphous, while the films post-annealed at 300~600°C contained crystallized anatase and rutile. With the increase of the annealing temperature, the surface roughness of film increased from 1.232 nm to 1.950 nm. Experimental results reveal that the processing parameters of TiO₂ thin films will influence the electrochromic properties such as transmittance, ion-storage capacity, inserted charge, optical density change, coloration efficiency and insertion coefficient.     

Structural and Electrical Properties of Sol–Gel-processed CdTiO3 Powders and Films

Cadmium titanate, CdTiO₃, was prepared by the sol–gel technique in bulk and in thin film form. The thermal evolution of the gels and the phase changes were studied by thermo- gravimetric analysis (TGA), X-ray diffractometry (XRD) and Raman and energy-dispersive (EDS) spectroscopies. The morphology of the samples was observed using scanning electron microscopy (SEM). Gels heated to 800 °C gave rise to powders with only the ilmenite-like phase. The orthorhombic perovskite phase is the only crystalline phase observed after a 4 h heat-treatment at 1100 °C. With respect to the conventional preparation method by solid-state reaction, by the sol–gel method it is possible to prepare the ilmenite phase at lower temperatures and the perovskite phase in a shorter time. Clear, homogeneous thin films were obtained by the dip-coating method. The refraction index and the thickness of the films were measured using ellipsometry. The humidity-sensitive electrical properties were measured for thin films deposited on alumina substrates with comb-type gold electrodes, heated to 200 °C and 450 °C. The films heated to 200 °C, which still contained organics, showed a variation of the resistance of six orders of magnitude in the relative humidity (RH) range tested (4–87% RH). The films heated to 450 °C, made of ilmenite-type CdTiO₃, were nearly insensitive to RH. © 1997 by John Wiley & Sons, Ltd.     

All alkoxide route to manganate and coboltate perovskite films and powders: effects of processing parameters

Manganate and cobaltate perovskites having the general formula ABO₃ have many technologically important applications. Here we present all alkoxide based routes to manganate and coboltate perovskite films and nano-phase powders of the compositions; LCMO (La_0.67Ca_0.33MnO₃), LSMO (La_0.75Sr_0.25MnO₃), LNCMO (La_0.33Nd_0.33Ca_0.33MnO₃), LBSMO (La_0.75Ba_0.125Sr_0.125MnO₃) and LSCO (La_0.50Sr_0.50CoO₃). The Mn and Co (oxo) methoxy-ethoxide precursors were prepared by reaction of MnCl₂ or CoCl₂ with 2 Kmoe in methoxy-ethanol-toluene. After hydrolysis of the alkoxide solutions by atmospheric air all systems produced X-ray and electron diffraction amorphous gels of high elemental homogeneity, and the IR spectra showed that they consisted of hydrated oxo-carbonates. Heating in air resulted in similar weight-loss curves for all studied gels passing; loss of H₂O in the range 20–300 °C, decomposition of carbonate groups into oxide and CO₂ in the temperature range 300–700 °C, and in some cases loss of a small amount of oxygen in the temperature range 700–1,000 °C. The pure perovskites were obtained at 690–770 °C with heat rates of typically 5–20 °C min^?1 without annealing. Perovskites could also be obtained at 550 °C by annealing, but these perovskites are prone to be A-site ion inhomogeneous according to the TEM EDS studies, which was not the case for the perovskites heat-treated to at least the carbonate decomposition temperature. This A-site inhomogeneity is ascribed to sequential decomposition of carbonates due to their different thermal stabilities, which is probably a general feature also with other sol–gel precursors and low temperature annealing. High quality polycrystalline films were prepared on Si/SiO₂/TiO₂/Pt substrates with all compositions and high quality epitaxial films were prepared of LCMO (on 100 LaAlO₃) and LSCO (on 100 SrTiO₃). The colossal magneto resistance (CMR) of the epitaxial LCMO films of 32% (246 K) is in parity with PLD derived films. The conductivities of the epitaxial and polycrystalline LSCO films were 1.9 mΩcm (on STO) and 1.7 mΩcm (on α-Al₂O₃, respectively).     

Microstructure and electrical properties of lead zirconate titanate thin films deposited by sol-gel method on La<Subscript>0.7</Subscript>Sr<Subscript>0.3</Subscript>MnO<Subscript>3</Subscript>/SiO<Subscript>2</Subscript>/Si substrate

(La_0.7Sr_0.3)MnO₃ thin films were deposited on SiO₂/Si substrates by a metal-organic decomposition (MOD) method, and then Pb(Zr_0.52Ti_0.48)O₃ (PZT) thin films were grown on (La_0.7Sr_0.3)MnO₃-coated SiO₂/Si substrates by a sol-gel method. The effects of annealing temperature on the crystalline phases, microstructures and electrical properties of the PZT films were investigated. X-ray diffraction analysis results indicated that the PZT films with a perovskite single phase could be obtained by annealing at 650°C. The dielectric constant and the remnant polarization of the PZT films increased with increasing annealing temperature. The remnant polarization and the coercive field of the films annealed at 650°C were 18.3 μC/cm² and 35.5 kV/cm, respectively, whereas the dielectric constant and loss value measured at 1 kHz were approximately 1100 and 0.81, respectively.