Photoelectric properties of the GeSi/Si heterostructures with self-assembled nanoclusters grown by sublimation molecular beam epitaxy in a GeH4 medium

The photosensitivity (PS) spectra of the GeSi/Si(001) heterostructures with self-assembled nanoclusters grown by sublimation molecular beam epitaxy in a GeH₄ medium have been studied by photo-emf spectroscopy at the semiconductor/electrolyte junction (PSE) and by photo-emf and photocurrent spectroscopy of Schottky barriers including the temperature dependence of the PS spectra in the temperature range of 10–300 K. The bands related to the phonon assisted and phonon-less interband of spatially indirect optical transitions in the GeSi nanoclusters have been observed in the PS spectra even at 300 K. The scatter effect of the GeSi nanoclusters in size and/or in composition on the PS spectrum’s edge shape has been theoretically considered. The emission theory of the photoexcited carriers from the quantum wells of the GeSi/Si nanoclusters built-in to a Schottky barrier (p-tn junction, semiconductor/electrolyte junction) has been developed.     

Binding of electron states in multilayer strained Ge/Si heterostructures with type-II quantum dots

Mechanical strains in a multilayer Ge/Si(001) heterostructure with vertically aligned Ge nanoclusters (quantum dots) are calculated using an interatomic potential based on the Keating valence-force-field model. It is found that the nonuniform spatial elastic strain distribution in this medium gives rise to a three-dimensional potential well for electrons in the strained Si layers near Ge nanoclusters. The depth of the potential well reaches 100 meV, and its spatial dimensions are determined by the diameter of the Ge nanoclusters. For a structure consisting of four Ge islands 23 nm in diameter arranged one above another, the electron binding energies in this well and the spatial electron density distribution are determined. The ground state has an s-like symmetry and is characterized by an electron binding energy of ～95 and ～60 meV for the elemental composition of Ge in the nanoclusters c = 1 and c = 0.7, respectively. The existence of bound electron states in the conduction band of strained Si must lead to a relaxation of the selection rules that determine the low efficiency of the radiative recombination in indirect-gap semiconductors. This explains the high value of the oscillator strength observed for the interband transitions in multilayer Ge/Si(001) structures with vertical correlation of the arrangement of Ge nanoclusters.     

Syntesis and structure investigations of nanostructures massive of GaAs

A new approach to the synthesis of ordered GaAs nanostructure massives via thermal deposition onto porous aluminum oxide matrices with ordered channel arrangement is described. The geometric characteristics of nanostructures, their structural states, and local atomic structures are studied. Parameters of local atomic structure (e.g., interatomic distances and coordination numbers) are obtained for comparing to the data on GaAs continuous films.     

Raman probe to estimate surface energies of embedded semiconductor nanostructures

Embedded semiconductor nanoclusters (nc‐) of GaN, Si and InN were grown using the ion‐implantation technique and subsequent annealing. Detailed phonon properties were studied for the identification of the grown phases as well as to estimate the stress developed in these embedded structures. The surface energies of the embedded nanoclusters were calculated in analogy with the stressed spherical nanoclusters and excess pressure in a liquid drop. The estimated surface energies for nc‐GaN ∼4 Nm⁻¹, nc‐InN ∼2.7 Nm⁻¹ and nc‐Si ∼1.4 Nm⁻¹ are discussed in the light of possible phase transition in the nanocrystalline systems. Copyright © 2009 John Wiley & Sons, Ltd.     

EXAFS of the superconducting oxide BaPb1−xBixO3

The two-valence state Bi³⁺ and Bi⁵⁺ of Bi in the semiconductor BaBiO₃ and in the BaPb_1?xBi_xO₃ (x = 0, 0.25, 0.6 and 1) system has been determined from the EXAFS spectra above the L_III-edges of Ba, Pb and Bi. Peaks in the radial distribution function up to 5 Å from the absorber have been identified through a model calculation using theoretical amplitudes and phase shifts and the interatomic distances from neutron diffraction measurements. We found indication of local disorder in the Pb-Bi sublattice for the mixed compound.     

Structure and low temperature properties of SrB6

A detailed study of the room temperature structure of high quality single crystalline SrB6 has been made. Minute changes in interatomic distances may drastically affect the electronic spectrum of this compound. Electronic transport properties both at zero and non-zero frequencies above ⁴He temperatures indicate that SrBP₆ is close to be a semiconductor. However, at very low temperatures this compound enters a metallic state with a low concentration of itinerant charge carriers. Possible correlation effects are indicated by anomalous temperature dependences of the electrical resistivity and the specific heat below 1 K.     

EXAFS and XRD studies of an amorphous Co57Ti43 alloy produced by mechanical alloying

We have investigated the local atomic order of an amorphous Co₅₇Ti₄₃ alloy produced by mechanical alloying by means of x-ray diffraction and EXAFS analyses on Co and Ti K-edges. Average coordination numbers and average interatomic distances between first neighbors where found from EXAFS and compared with those determined using an additive hard sphere (AHS) model associated with an deconvolution, and also with data from bcc- Co₂Ti compound. EXAFS results obtained indicated a shortening in the Co-Ti and Ti-Ti average interatomic distances when compared to those found by using the AHS-RDF method and an increase in the Co-Co and Ti-Ti average interatomic distances and a shortening in the Co-Ti one when compared to the interatomic distances found in the bcc- Co₂Ti compound. In spite of these differences, average coordination numbers obtained from EXAFS and AHS-RDF are similar to each other and also to those found in bcc- Co₂Ti.     

Electronic Properties of Metallic Nanoclusters on Semiconductor Surfaces: Implications for Nanoelectronic Device Applications

We review current research on the electronic properties of nanoscale metallic islands and clusters deposited on semiconductor substrates. Reported results for a number of nanoscale metal-semiconductor systems are summarized in terms of their fabrication and characterization. In addition to the issues faced in large-area metal-semiconductor systems, nano-systems present unique challenges in both the realization of well-controlled interfaces at the nanoscale and the ability to adequately characterize their electrical properties. Imaging by scanning tunneling microscopy as well as electrical characterization by current-voltage spectroscopy enable the study of the electrical properties of nanoclusters/semiconductor systems at the nanoscale. As an example of the low-resistance interfaces that can be realized, low-resistance nanocontacts consisting of metal nanoclusters deposited on specially designed ohmic contact structures are described. To illustrate a possible path to employing metal/semiconductor nanostructures in nanoelectronic applications, we also describe the fabrication and performance of uniform 2-D arrays of such metallic clusters on semiconductor substrates. Using self-assembly techniques involving conjugated organic tether molecules, arrays of nanoclusters have been formed in both unpatterned and patterned regions on semiconductor surfaces. Imaging and electrical characterization via scanning tunneling microscopy/spectroscopy indicate that high quality local ordering has been achieved within the arrays and that the clusters are electronically coupled to the semiconductor substrate via the low-resistance metal/semiconductor interface.     

多参考组态相互作用方法研究ZnHg低激发态(1∏，3∏)的势能曲线和解析势能函数

采用多参考组态相互作用方法计算了ZnHg二聚体两个低激发∏态(¹∏，³∏)的原子间相互作用势能曲线. 用Murrel-Sorbie函数拟合得到了相应的解析势能函数，并用其计算力常数，进而确定了光谱常数. 所得结果与仅有的理论工作进行了比较. 基于所得势能曲线，通过解分子中原子核运动的薛定谔方程预测了各电子态的振动能级. 关键词： 势能曲线 解析势能函数 光谱常数 振动能级     

Investigation of the mechanical and electronic properties of Ag-Au and Co-Au nanocontacts by the method of first-principle molecular dynamics

The atomic and electronic structures of AgAuAg, AuAgAg, and AuCoCo mixed nanocontacts are investigated by the method of first-principle molecular dynamics. The characteristic interatomic distances in contacts depending on their component composition are determined. The interrelationship between the structural and electronic properties of mixed nanocontacts is shown. The formation of stable bonds between the atoms of various elements in the contact chain, which makes it possible to explain the cause of stabilization and an increase in the contact strength at large interatomic distances is found. It is shown that the addition of Co atoms into pure-gold nanocontacts increases their strength (increases the breaking force of the contact), while the addition of Ag atoms leads to an increase in the range of interatomic distances at which the existence of the nanocontact is possible.     

Fabrication of nanostructured silicon surface using selective chemical etching

A two-stage process based on selective chemical etching induced by metal nanoclusters is used to fabricate nanostructured surfaces of silicon plates with a relatively low reflectance. At silicon surfaces covered with silver nanoclusters, the SERS effect is observed for rhodamine concentrations of about 10^–12 M. At certain technological parameters, the depth of the nanostructured layer weakly depends on the conditions for the two-stage etching, in particular, etching time. Under otherwise equal conditions for etching, the rate of the formation of textured layer in the p-type silicon is two times greater than the formation rate in the n-type silicon.     

Influence of crystal dimensions on interatomic distances in dispersed carbon

The relationship between the interatomic distances and crystal dimensions in dispersed carbon is studied by x-ray structure analysis and by performing model calculations. It is established that the interatomic distances in dispersed carbon are determined by the dimensions of the crystals along the crystallographic a axis (L _a). Small crystal dimensions dictate smaller interatomic distances than in graphite; an increase in the crystal dimensions leads to a corresponding increase in this parameter. The interatomic distances in dispersed carbon depend on the degree in covalency of the bonding, which is a function of L _a. Fiz. Tverd. Tela (St. Petersburg) 41, 744–747 (April 1999)     

EXAFS and EPR studies of inclusion compounds of the trans-[Cu(en)2(H2O)2]2+ in cucurbit[8]uril

This work describes EXAFS and EPR studies of inclusion compounds of the trans-[Cu(en)₂(H₂O)₂]²⁺ complex in the macrocyclic cavitand CB[8] at different stages of heat treatment in the hydrogen atmosphere in a temperature range of 200–330°C. The structure and composition of the nearest environment of copper atoms are characterized, and the interatomic distances and coordination numbers are determined. It is shown that the structure of the copper complex inside the cavitand CB[8] remains unchanged at the first stage of complex preparation and upon heating up to 280°C in hydrogen atmosphere. The copper environment corresponds to four nitrogen atoms and two oxygen atoms. Further temperature treatment at 330°C causes decomposition of the complex inside the cavitand without the formation of copper clusters.     

Surface-enhanced Raman spectroscopy of semiconductor nanostructures

We review our recent results concerning surface-enhanced Raman scattering (SERS) by confined optical and surface optical phonons in semiconductor nanostructures including CdS, CuS, GaN, and ZnO nanocrystals, GaN and ZnO nanorods, and AlN nanowires. Enhancement of Raman scattering by confined optical phonons as well as appearance of new Raman modes with the frequencies different from those in ZnO bulk attributed to surface optical modes is observed in a series of nanostructures having different morphology located in the vicinity of metal nanoclusters (Ag, Au, and Pt). Assignment of surface optical modes is based on calculations performed in the frame of the dielectric continuum model. It is established that SERS by phonons has a resonant character. A maximal enhancement by optical phonons as high as 730 is achieved for CdS nanocrystals in double resonant conditions at the coincidence of laser energy with that of electronic transitions in semiconductor nanocrystals and localized surface plasmon resonance in metal nanoclusters. Even a higher enhancement is observed for SERS by surface optical modes in ZnO nanocrystals (above 10⁴). Surface enhanced Raman scattering is used for studying phonon spectrum in nanocrystal ensembles with an ultra-low areal density on metal plasmonic nanostructures.     

Effect of the frequency of intramolecular motions on the NMR relaxation in liquid state temperature regime

Equations for the spectral densities of complex motion of a spin pair undergoing internal motion and isotropic/anisotropic overall rotation have been considered. The fluctuations of the interproton distances, caused by internal motion, have been taken into account in the theoretical equations. A method allowing a distinction between the isotropic and the anisotropic overall rotation of molecules has been proposed. The effect of the activation parameters of internal motions (known from the solid state study) on the measured T ₁ relaxation of the ¹³C and ¹H–¹H cross-relaxation rates has been analysed for methyl-β-D-galactopyranoside in DMSO-d6 solution. The conformational trans-gauche jumps of the methylene group are not fast enough to affect the T ₁ value of carbon C6 in the liquid state temperatures regime. Only the methyl group rotation is a very fast internal motion. This motion influences the carbon C7 relaxation and methyl protons–anomeric proton cross-relaxation. The values of interatomic distances between anomeric H(C1) and H(C5) as well as the three methyl protons H(C7) have been calculated from the cross-relaxation rates. The distance H(C1)–H(C7) fluctuates due to the rotation of methyl group. The application of the ‘model-free approach’ to study molecular dynamics in solutions is discussed.     

Synthesis of crystalline Ge nanoclusters in PE-CVD-deposited SiO2 films

The synthesis of evenly distributed Ge nanoclusters in plasma-enhanced chemical-vapour-deposited (PE-CVD) SiO₂ thin films containing 8 at. % Ge is reported. This is of importance for the application of nanoclusters in semiconductor technology. The average diameter of the Ge nanoclusters can be controlled in the range of 3–6 nm by variation of the annealing parameters. Using a combination of transmission electron microscopy and Raman-scattering spectroscopy, the nanoclusters were shown to be crystalline. However, photoluminescence measurements showed no light emission that could be definitively correlated to the presence of the nanoclusters. PACS 61.82.Rx; 78.67.Bf; 81.07.Bc     

Equilibrium state of C<Subscript>60</Subscript>, C<Subscript>70</Subscript>, and C<Subscript>72</Subscript> nanoclusters and local defects of the molecular skeleton

The stability of C₆₀ and C₇₀ fullerenes and C₆₀ and C₇₂ nanotubes devoid of 2–12 atoms of the cluster skeleton was theoretically studied. It was established that C_n molecules with an even number of atoms remain stable, which was confirmed by experimental studies of monomolecular decay of clusters with the number of atoms n≥30. The change in the internuclear distances and in the ionization potential of nanoclusters was determined depending on the number of eliminated atoms. Such defects were shown to decrease the ionization potential of nanoclusters by 0.5–0.8 eV. The electron spectrum was calculated within the Harrison semiempirical tight-binding model in the Goodwin modification. A new parametrization of interatomic matrix elements of the Hamiltonian and atomic terms for carbon nanoclusters was suggested.     

Phase diagram of Ge:(C,Sn)

We present the self-assembling conditions of 1C4Sn tetrahedral nanoclusters with carbon atoms in their centers in Ge:(C, Sn) in the wide temperature range as a function of the impurity contents and temperature. These conditions are the phase diagram of Ge:(C, Sn) since nanocluster occurrence and completion of self-assembling when all carbon atoms are in nanoclusters are results of the continuous phase transitions. The significant decrease of the strain energy after formation of nanoclusters is a cause of self-assembling. It is shown that the nanocluster occurrence temperature depends only on the Sn content. The impurity content conditions when all carbon atoms are in 1C4Sn nanoclusters are obtained for the temperatures up to 855 ^°C.     

Theoretical investigation of the structures of unsupported 38-atom CuPt clusters

A genetic algorithm has been used to perform a global sampling of the potential energy surface in the search for the lowest-energy structures of unsupported 38-atom Cu–Pt clusters. Structural details of bimetallic Cu–Pt nanoparticles are analyzed as a function of their chemical composition and the parameters of the Gupta potential, which is used to mimic the interatomic interactions. The symmetrical weighting of all parameters used in this work strongly influences the chemical ordering patterns and, consequently, cluster morphologies. The most stable structures are those corresponding to potentials weighted toward Pt characteristics, leading to Cu–Pt mixing for a weighting factor of 0.7. This reproduces density functional theory (DFT) results for Cu–Pt clusters of this size. For several weighting factor values, the Cu₃₀Pt₈ cluster exhibits slightly higher relative stability. The copper-rich Cu₃₂Pt₆ cluster was reoptimized at the DFT level to validate the reliability of the empirical approach, which predicts a Pt@Cu core-shell segregated cluster. A general increase of interatomic distances is observed in the DFT calculations, which is greater in the Pt core. After cluster relaxation, structural changes are identified through the pair distribution function. For the majority of weighting factors and compositions, the truncated octahedron geometry is energetically preferred at the Gupta potential level of theory.