高择优取向Cu电沉积层的XRD研究

采用电化学和XRD方法在CuSO4 +H2 SO4 电解液中获得Cu电沉积层并研究其结构 .结果表明 ,在 4 .0A/dm2 和 15 .0A/dm2 电流密度下可分别获得 (2 2 0 )和 (111)晶面高择优取向Cu镀层 ;Cu镀层晶面织构度随厚度提高而增大 ,获得 (111)晶面高择优Cu镀层的厚度约是 (2 2 0 )晶面的 7倍 ,说明Cu(2 2 0 )晶面比 (111)晶面是更易保留的晶面 ,且低电流密度下铜的电结晶更容易受电沉积条件控制 ;较高的沉积电流密度有利于晶核的形成 ;Cu镀层存在晶格畸变和晶胞参数的涨大     

Cu/Cu2+沉积型电极在流动酸性电解液中的电化学性能

在流动的高浓度硫酸铜酸性溶液中, 研究了H2SO4浓度、 温度和CuSO4浓度对Cu/Cu2+沉积型电极在石墨基体上电化学性能的影响. 结果表明, 沉积型铜电极反应受控于阴极沉积过程, 室温下动力学过程较慢, 但铜沉积致密, 不易形成枝晶和海绵状铜. 适当提高H2SO4和CuSO4浓度及反应温度可降低铜沉积的极化, 改善其动力学特征; 但Cu离子的溶解度受限于H2SO4浓度, CuSO4浓度提升空间有限. 优化电解液组成为2.5 mol/L H2SO4＋0.7 mol/L CuSO4, 反应温度45 ℃. 在此条件下, 铜在石墨基体上沉积/溶解的交换电流密度提高1个数量级, 具有良好的动力学特征, 单电极充放电电压差降低近50%, 能量效率超过80%.     

激光刻蚀模板中电沉积特殊结构CIGS薄膜

本文利用激光刻蚀模板,在水溶液中电沉积制备金属铜薄膜,讨论了温度、电流、硫酸铜浓度对薄膜形貌的影响. 采用SEM对制备的铜薄膜进行表征,结果表明在沉积温度为30 ℃,沉积电流为4 A·dm^-2(表观工作电流密度),硫酸铜浓度在20 ~ 50 g·L^-1的水溶液中电沉积可以得到中空馒头状和开口碗状结构的铜薄膜. 利用激光刻蚀模板,在离子液体1-丁基-3-甲基咪唑三氟甲磺酸盐([BMI][TfO]) - 30 Vol%丙醇混合电解质中电沉积CIGS薄膜,研究了沉积电势、沉积时间对薄膜形貌的影响. SEM观察发现,在沉积电势为-1.8 V,沉积时间为1.5 h条件下电沉积可以得到近似柱状的簇状花束样的CIGS薄膜, 电沉积铜后再进一步电沉积CIGS,得到了均匀有序的鼓包柱状结构的Cu/CIGS复合薄膜. 用恒电势方波法对制备的薄膜真实表面积进行测试,计算结果表明,与无模板电沉积制备的CIGS薄膜相比,激光刻蚀模板法制备的Cu/CIGS复合薄膜的表面积提高了约8倍.     

电沉积微纳米晶铁的形貌与生长机理研究

研究电流密度、温度、浓度和表面活性剂对电沉积微纳米晶铁电沉积过程的影响,SEM和XRD测试结果表明:于小电流密度、低温和高浓度下电流积,可得到片状α-Fe,而在大电流密度、高温和低浓度下电沉积则得到枝晶-αFe,表面活性剂对产物的形貌和组成没有影响.并讨论电沉积过程中产物的形成机制.     

基于纳米金修饰的两种无汞型重金属微传感器的对比研究

采用微加工技术制备了集成有工作电极和对电极的两种重金属微传感电极芯片,工作电极表面采用电沉积法修饰纳米金(Gold nanoparticles,GNPs),由半胱氨酸(L-cysteine,Cys)和天冬氨酸(L-aspartic acid,Asp)修饰制备Asp/Cys/GNPs/微传感电极芯片,并利用原位镀锡膜(Sn film)的方法,制成Sn/GNPs/微传感电极芯片。采用方波伏安法和方波溶出伏安法考察了两种微传感电极芯片对重金属离子Cu2+,Pb2+和Zn2+的响应特性。Asp/Cys/GNPs/微传感电极芯片可有效识别Cu2+和Pb2+,线性范围为5～2000μg/L,检出限为1μg/L;Sn/GNPs/微传感电极芯片可有效识别Cu2+,Pb2+和Zn2+,线性检测范围分别为5～500μg/L,5～500μg/L和10～500μg/L,检出限分别为2,3和5μg/L。相比而言,Asp/Cys/GNPs/微传感电极芯片具有较宽的检测范围,而Sn/AuNPs/微传感电极芯片具有较高的灵敏度,两种传感器绿色环保、制备简单、更新简便、易于集成,在水质在线监测方面具有应用前景。     

在空心聚苯乙烯微球表面电沉积Au-Cu双壳层

PS/Au/Cu双壳层核壳复合微球是在自制的电沉积装置中首先在空心聚苯乙烯微球模板上电沉积金形成PS/Au微球,然后再电沉积Cu。首先,PS/Au微球保持了较好的球形度,其中沉积层Au粗糙度低,且厚度达到5.6 μm。由于Au和铜有相同的面心立方晶体结构,所以Cu沿着Au的晶体结构在PS/Au表面沉积。微球断面Au-Cu结合非常紧致,Cu的厚度为8.62 μm,Au的厚度为4.04 μm。PS/Au/Cu微球和Au-Cu双壳层的形貌、厚度,成分和粗糙度是通过3D体式显微镜,SEM、EDS和XRD表征,其结果显示PS/Au/Cu微球及双壳层Au-Cu均匀细致,粗糙度低。     

在空心聚苯乙烯微球表面电沉积Au-Cu双壳层

PS/Au/Cu双壳层核壳复合微球是在自制的电沉积装置中首先在空心聚苯乙烯微球模板上电沉积金形成PS/Au微球,然后再电沉积Cu。首先,PS/Au微球保持了较好的球形度,其中沉积层Au粗糙度低,且厚度达到5.6 μm。由于Au和铜有相同的面心立方晶体结构,所以Cu沿着Au的晶体结构在PS/Au表面沉积。微球断面Au-Cu结合非常紧致,Cu的厚度为8.62 μm,Au的厚度为4.04 μm。PS/Au/Cu微球和Au-Cu双壳层的形貌、厚度,成分和粗糙度是通过3D体式显微镜,SEM、EDS和XRD表征,其结果显示PS/Au/Cu微球及双壳层Au-Cu均匀细致,粗糙度低。     

电子电镀铜新体系中添加剂对铜电沉积及镀层结构的影响机制

以低主盐浓度、 弱碱性、 复合配位的柠檬酸盐电子电镀铜新体系为研究对象, 阐明了新型添加剂XNS(聚胺类化合物和含氮化合物的混合物)在新电沉积铜体系中的作用. 恒电流沉积实验结果表明, 添加剂XNS能够提高铜沉积的电流效率, 特别是在2.0 A/dm²电流密度下, 添加剂XNS使铜沉积电流效率达到95.4%, 提高了17.5%. 电化学实验的结果表明, 添加剂XNS改变了铜沉积的电极过程, 由原来的两步单电子还原过程 [Cu(Ⅱ)+e→Cu(Ⅰ)+e→Cu]转变为一步两电子还原过程[Cu(Ⅱ)+2e→Cu]. 虽然添加剂XNS呈现促进铜电沉积的特征, 即还原电流增大, 但铜镀层颗粒却更细小、 更致密均匀. 在2.0 A/dm²电流密度下, 铜镀层晶体结构由无添加剂时的(111)晶面重构为高择优取向的(200)晶面.     

在空心聚苯乙烯微球表面电沉积Au-Cu双壳层（英文）

PS/Au/Cu双壳层核壳复合微球是在自制的电沉积装置中首先在空心聚苯乙烯微球模板上电沉积金形成PS/Au微球,然后再电沉积Cu。首先,PS/Au微球保持了较好的球形度,其中沉积层Au粗糙度低,且厚度达到5.6μm。由于Au和铜有相同的面心立方晶体结构,所以Cu沿着Au的晶体结构在PS/Au表面沉积。微球断面Au-Cu结合非常紧致,Cu的厚度为8.62μm,Au的厚度为4.04μm。PS/Au/Cu微球和Au-Cu双壳层的形貌、厚度,成分和粗糙度是通过3D体式显微镜,SEM、EDS和XRD表征,其结果显示PS/Au/Cu微球及双壳层Au-Cu均匀细致,粗糙度低。     

三维多孔铜和锌镀层协同构筑无枝晶锂金属电极

金属锂具有高理论比容量和低氧化还原电位, 被认为是高能量密度二次电池最理想的负极材料之一, 但其在循环过程中的枝晶生长和体积变化易造成电池失效和安全隐患. 以孔径为5 μm左右的自制三维多孔铜为基底, 在其表面电沉积锌层(3D Cu@Zn), 作为金属锂沉积的集流体, 构筑无枝晶锂金属电极. 三维多孔铜的孔结构稳定, 孔径大小适宜, 可有效降低局部电流密度和缓解体积变化. 锌镀层可降低锂金属的形核过电位, 诱导锂的均匀沉积, 有效抑制锂枝晶生长. 以3D Cu@Zn为集流体, 锂沉积面积容量为4 mAh•cm^–2, 电极表面仍无枝晶出现, 经过锂剥离后表面仍然光滑; 而铜箔上沉积的锂显示明显的枝晶和不均匀性, 3D Cu上沉积的锂显示局部不均匀性和一定量枝晶. 在电流密度为0.5和 1 mA•cm^–2, 面积容量为1 mAh•cm^–2条件下, Li||3D Cu@Zn半电池获得了稳定的库伦效率; 在2 mA•cm^–2的高电流密度和1 mAh•cm^–2的面积容量条件下, Li||3D Cu@Zn@Li对称电池可稳定循环700 h以上; 以3D Cu@Zn@Li为负极, LiFePO₄为正极的全电池, 在1 C倍率下, 经过150次循环后仍保持88 mAh•g^–1的容量, 均明显优于Cu片和3D Cu作为集流体的锂金属电极.     

Bottom-up filling in electroless plating with an addition of JGB-RPE

Bottom-up filling of copper for different sub-micrometer trenches was investigated by electroless deposition technique using Janus Green B (JGB) and Triblock copolymers RPE-2520. The bottom-up copper filling usually achieves a relative high deposition rate of copper in the bottom of trenches through inhibiting the surface deposition or accelerating the bottom deposition of copper. The bottom-up filling behavior of electroless copper deposition for different trenches was investigated in a plating bath containing 0.3 mg/L JGB and 1.0 mg/L RPE-2520. The cross-section image with SEM indicated that the trenches with different widths ranging from 110 to 520 nm were completely filled with electroless copper and that no void was found.     

超级化学镀铜填充微道沟的研究

超级化学铜填充技术不仅可以应用于半导体超大集成电路铜互连线, 而且可以应用于三维封装. 研究了不同浓
度、不同分子量的PEG 对以甲醛为还原剂的化学镀铜溶液中铜的沉积速率的影响. 随着添加剂PEG 浓度和分子量的
增大, 化学铜的沉积速率明显降低. 电化学研究结果表明PEG 通过抑制甲醛的氧化反应降低化学铜的沉积速率, PEG
分子量越大, 对化学铜的抑制作用越强. 利用PEG-6000 对化学铜的抑制作用和在溶液中低的扩散系数, 采用添加
PEG-6000 的化学镀铜溶液, 成功地实现了宽度在0.2 μm 以下微道沟的超级化学填充. 就PEG 的分子量、微道沟的深
径比等因素对超级化学铜填充的影响也做了研究.     

浓度及冷冻-解冻处理对CuCl_2水溶液中Cu~(2+)区域结构的影响

应用扩展X射线吸收精细结构(EXAFS)光谱研究了CuCl2水溶液中Cu2+的区域环境结构,通过测定CuCl2水溶液在不同浓度条件下及冷冻-解冻(FT)处理前后CuK边EXAFS吸收谱,研究了浓度及冷冻-解冻处理对Cu2+第一配位层结构的影响.EXAFS实验结果表明,CuCl2水溶液中Cu2+第一配位层距离中心原子Cu最近邻原子为O原子,配位数介于3.0-4.3之间,Cu—O键长在0.192-0.198nm之间,这种结构与Cu2+的Jahn-Teller效应有关.不同浓度的CuCl2水溶液中Cu2+的区域环境结构有很大不同,随着CuCl2水溶液浓度的升高,Cu2+第一配位层配位数减小,Cu—O键伸长.结构参数拟合结果证实冷冻-解冻处理对Cu2+的区域环境结构有影响,CuCl2溶液经冷冻-解冻处理后,Cu2+第一配位层配位数变大,热无序度增加.     

Effect of additive triblock copolymer PEP-3100 on bottom-up filling in electroless copper plating

Bottom-up copper filling for different sub-micrometer trenches was investigated by electroless deposition technique using a PO-EO-PO triblock copolymer termed PEP-3100 as an additive. It was found that PEP-3100 (molecular weight 3100) had a strong inhibition for the electroless copper deposition. The bottom-up filling behavior of electroless copper bath for different trenches was investigated in a plating bath containing 1.0 mg l⁻¹ PEP-3100. The cross-section SEM observation indicated the trenches with different widths ranging from 100 to 380 nm were all filled completely by electroless copper.     

用角分布XPS法研究热处理时YBCO膜的表面组成变化及膜与衬底的相互作用

用角分布XPS法研究了MOD法制得的YBCO膜在热处理过程中膜的表面元素浓度变化以及膜与村底ZrO_2之间的原子扩散和固态化学反应。结果表明无论是薄膜(约0.1 μm)和较厚的膜(约1～1.5 μm), 在大约530～720 ℃的温度范围内加热后都发生铜表面富集和钡表面浓度偏低。在800 ℃以上加热后铜的表面浓度显著降低, 温度愈高, 降低愈甚。膜与衬底之间的化学反应也随温度升高而加剧。例如薄膜在890 ℃加热后钡向ZrO_2衬底扩散, 膜中的铜仍以+2价为主; 在950 ℃加热后衬底表面生成了富钡层, 而铜则主要以+1价的形式存在于富钡层表面。与厚膜相比, 在800 ℃以上薄膜与衬底的原子扩散和固态化学反应对于膜超导电性的损害更显著。     

Simple fabrication of Cu~(2+) doped calcium alginate hydrogel filtration membrane with excellent anti-fouling and antibacterial properties

Herein,copper ion doped calcium alginate(Cu~(2+)/CaAlg) composite hydrogel filtration membranes were prepared by using natural polymer sodium alginate(NaAlg) as raw material.The thermal stability and structure of the composite membranes were characterized by thermogravimetric analysis and infrared spectroscopy.The mechanical strength,anti-fouling performance,hydrophilicity and filtration performance of the membrane were studied.The results show that Cu~(2+)/CaAlg hydrogel membrane has excelle nt mechanical properties and thermal stability.The anti-swelling ability of the membrane was greatly enhanced by doping Cu~(2+).After three alternate filtration cycles,the flux recovery rate of Cu~(2+)/CaAlg hydrogel membrane can still reach 85%,indicating that the membrane has good antipollution performance.When the operation pressure was 0.1 MPa,the rejection of coomassie brilliant blue G250 reached 99.8% with a flux of 46.3 L m ~2 h ~1,while the Na_2 SO_4 rejection was less than 10.0%.The Cu~(2+)/CaAlg membrane was recycled after 24 h in the filtration process,and its flux and rejection rate did not decrease significantly,indicating that the hydrogel membrane has long-term application potential.The Cu~(2+)/CaAlg membrane has a wide range of applications prospect in dye desalination,fine separation and biopharmaceutical technology fields.     

3, 5-二氯苯胺的电化学合成

以3, 5-二氯硝基苯为原料, 采用阴极转动分隔式电解槽, 在65℃、电流密度10A/dm^2、阴极转速400r/min和电极电位在-0.35～-0.45V范围的条件下进行电合成, 所得3, 5-二氯苯胺的产率达90%左右, m.p. 49～52℃。     

木薯羧甲基淀粉对铜离子的吸附性能

采用搅拌球磨机对木薯淀粉进行机械活化,以活化60 min的木薯淀粉为原料,干法合成羧甲基淀粉吸附剂。考察羧甲基淀粉的取代度、溶液的pH值、Cu2+的初始浓度、吸附时间、羧甲基淀粉的投加量等因素对羧甲基淀粉吸附Cu2+性能的影响。结果表明,该羧甲基淀粉对Cu2+有很好的吸附作用;用取代度为0.841的羧甲基淀粉处理含Cu2+的废水,在pH=7.0、羧甲基淀粉的投加量50.00 mg/L、吸附时间15 min时,羧甲基淀粉对废水中Cu2+的吸附率高达98.80%,处理后的水质达到国家污水综合排放标准(GB8978-1996)中一级标准要求。     

Comparison of Bottom-up Filling in Electroless Plating with an Addition of PEG,PPG and EPE

The bottom‐up filling capabilities of electroless copper plating bath with an addition of additives, such as polyethylene glycol (PEG), polypropylene glycol (PPG) and triblock copolymers of PEG and PPG with ethylene oxide terminal blocks termed EPE, were investigated by the cross‐sectional scanning electron microscopy (SEM) observation of sub‐micrometer trenches. Though three additives had inhibition for electroless copper deposition, the suppression degrees of three additives were different. EPE‐2000 had the strongest suppression for electroless copper deposition, and the suppression of PEG‐2000 was the weakest. The bottom‐up filling capability of electroless copper was investigated in a plating bath containing different additives with the concentration of 2.0 mg/L. The cross‐sectional SEM observation indicated the trenches with the width of 280 nm and the depth of 475 nm were all completely filled by the plating bath with an addition of EPE‐2000, but the trenches were not completely filled by the plating bath with an addition of PEG‐2000 or PPG‐2000, and some voids appeared. Linear sweep voltammetry measurement indicated that three additives all inhibited the cathodic reduction reaction and the anodic oxidation reaction, and the inhibition of EPE‐2000 was the strongest among three additives, which agreed with that of the deposition rate of electroless copper. Significant differences in surface roughness of deposited copper film were observed by UV‐visible near‐infrared for different suppressors, and the bright and smooth of deposited copper film were in accordance with the inhibition of three additives.     

微悬臂梁检测三肽Gly-Gly-His与Cu~(2+)的相互作用过程

将三肽Gly-Gly-His(GGH)共价键合到MPA修饰的微悬臂梁表面,研究了肽与Cu2+的相互作用过程.研究发现,在Cu2+浓度较高时,Cu2+能快速与不同肽链上的羧基和咪唑环配位,并通过连锁反应诱导悬臂梁向镀金面偏转;而后肽链上的氮原子与Cu2+配位,同时构象发生变化,由直链转变成折叠状,进而增加链间的作用力使悬臂梁反向偏转;而Cu2+浓度低时不能实现连锁反应诱导悬臂梁表面快速的形成向内的拉力,直接通过构象变化推动悬臂梁反向偏转.考察了溶液pH值、Cl-浓度对GGH与Cu2+作用的影响,结果表明,在pH 7.0的条件下GGH与Cu2+作用导致悬臂梁偏转最大.Cl-的存在会与Cu2+形成CuCl2–xx配合物不易与肽链结合.