Nuclear spin diffusion effects in optically pumped quantum wells

We studied the influence of the nuclear spin diffusion on the dynamical nuclear polarization of low dimensional nanostructures subject to optical pumping. Our analysis shows that the induced nuclear spin polarization in semiconductor nanostructures will develop both a time and position dependence due to a nonuniform hyperfine interaction as a result of the geometrical confinement provided by the system. In particular, for the case of semiconductor quantum wells, nuclear spin diffusion is responsible for a nonzero nuclear spin polarization in the quantum well barriers. As an example we considered a 57 Å GaAs square quantum well and a 1000 Å Al _x Ga_1?x As parabolic quantum well both within 500 Å Al_0.4Ga_0.6As barriers. We found that the average nuclear spin polarization in the quantum well barriers depends on the strength of the geometrical confinement provided by the structure and is characterized by a saturation time of the order of few hundred seconds. Depending on the value of the nuclear spin diffusion constant, the average nuclear spin polarization in the quantum well barriers can get as high as 70% for the square quantum well and 40% for the parabolic quantum well. These results should be relevant for both time resolved Faraday rotation and optical nuclear magnetic resonance experimental techniques.     

Surface-sensitive NMR in optically pumped semiconductors

We present a scheme of surface-sensitive nuclear magnetic resonance in optically pumped semiconductors, where an NMR signal from a part of the surface of a bulk compound semiconductor is detected apart from the bulk signal. It utilizes optically oriented nuclei with a long spin-lattice relaxation time as a polarization reservoir for the second (target) nuclei to be detected. It provides a basis for the nuclear spin polarizer [IEEE Trans. Appl. Supercond. 14:1635, 2004], which is a polarization reservoir at the surface of the optically pumped semiconductor that polarizes nuclear spins in a target material in contact through the nanostructured interfaces.     

Optical pump-probe measurements of local nuclear spin coherence in semiconductor quantum wells

We demonstrate local manipulation and detection of nuclear spin coherence in semiconductor quantum wells by an optical pump-probe technique combined with pulse rf NMR. The Larmor precession of photoexcited electron spins is monitored by time-resolved Kerr rotation (TRKR) as a measure of nuclear magnetic field. Under the irradiation of resonant pulsed rf magnetic fields, Rabi oscillations of nuclear spins are traced by TRKR signals. The intrinsic coherence time evaluated by a spin-echo technique reveals the dependence on the orientation of the magnetic field with respect to the crystalline axis as expected by the nearest neighbor dipole-dipole interaction.     

High-Frequency EPR and ENDOR Spectroscopy on Semiconductor Quantum Dots

It is shown that high-frequency electron paramagnetic resonance (EPR) and electron-nuclear double resonance (ENDOR) spectroscopy are excellent tools for the investigation of the electronic properties of semiconductor quantum dots (QDs). The great attractions of these techniques are that, in contrast to optical methods, they allow the identification of the dopants and provide information about the spatial distribution of the electronic wave function. This latter aspect is particularly attractive because it allows for a quantitative measurement of the effect of confinement on the shape and properties of the wave function. In this contribution EPR and ENDOR results are presented on doped ZnO QDs. Shallow donors (SDs), related to interstitial Li and Na and substitutional Al atoms, have been identified in this material by pulsed high-frequency EPR and ENDOR spectroscopy. The shallow character of the wave function of the donors is evidenced by the multitude of ENDOR transitions of the ⁶⁷Zn nuclear spins and by the hyperfine interaction of the ⁷Li, ²³Na and ²⁷Al nuclear spins that are much smaller than for atomic lithium, sodium and aluminium. The EPR signal of an exchange-coupled pair consisting of a shallow donor and a deep Na-related acceptor has been identified in ZnO nanocrystals with radii smaller than 1.5 nm. From ENDOR experiments it is concluded that the deep Na-related acceptor is located at the interface of the ZnO core and the Zn(OH)₂ capping layer, while the shallow donor is in the ZnO core. The spatial distribution of the electronic wave function of a shallow donor in ZnO semiconductor QDs has been determined in the regime of quantum confinement by using the nuclear spins as probes. Hyperfine interactions as monitored by ENDOR spectroscopy quantitatively reveal the transition from semiconductor to molecular properties upon reduction of the size of the nanoparticles. In addition, the effect of confinement on the g-factor of SDs in ZnO as well as in CdS QDs is observed. Finally, it is shown that an almost complete dynamic nuclear polarization (DNP) of the ⁶⁷Zn nuclear spins in the core of ZnO QDs and of the ¹H nuclear spins in the Zn(OH)₂ capping layer can be obtained. This DNP is achieved by saturating the EPR transition of SDs present in the QDs with resonant high-frequency microwaves at low temperatures. This nuclear polarization manifests itself as a hole and an antihole in the EPR absorption line of the SD in the QDs and a shift of the hole (antihole). The enhancement of the nuclear polarization opens the possibility to study semiconductor nanostructures with nuclear magnetic resonance techniques.     

Spin polarization of semiconductor carriers by reflection off a ferromagnet

We present a theory of generation or alteration of the electron spin coherence and population in an n-doped semiconductor by reflection at the interface with a ferromagnet. The dependence of the spin reflection on the Schottky barrier height and the doping concentration in the semiconductor was computed for a generic model. The theory provides an explanation for the spontaneous electron spin coherence and nuclear polarization in the semiconductor interfaced with a ferromagnet and associated phenomena recently observed by time-resolved Faraday rotation experiments. The study also points to an alternative approach to spintronics different from spin injection.     

170 nm nuclear magnetic resonance imaging using magnetic resonance force microscopy

We demonstrate one-dimensional nuclear magnetic resonance imaging of the semiconductor GaAs with 170 nm slice separation and resolve two regions of reduced nuclear spin polarization density separated by only 500 nm. This was achieved by force detection of the magnetic resonance, magnetic resonance force microscopy (MRFM), in combination with optical pumping to increase the nuclear spin polarization. Optical pumping of the GaAs created spin polarization up to 12 times larger than the thermal nuclear spin polarization at 5K and 4T. The experiment was sensitive to sample volumes of 50 microm(3) containing approximately 4 x 10(11)71 Ga/Hz. These results demonstrate the ability of force-detected magnetic resonance to apply magnetic resonance imaging to semiconductor devices and other nanostructures.     

Dynamics of quantum dot nuclear spin polarization controlled by a single electron

We present measurements of the buildup and decay of nuclear spin polarization in a single semiconductor quantum dot. Our experiment shows that we polarize the nuclei in a few milliseconds, while their decay dynamics depends drastically on external parameters. We show that a single electron can very efficiently depolarize nuclear spins in milliseconds whereas in the absence of the electron the nuclear spin lifetime is on the scale of seconds. This lifetime is further enhanced by 1-2 orders of magnitude by quenching the nonsecular nuclear dipole-dipole interactions with a magnetic field of 1 mT.     

Optically detected nuclear magnetic resonance at the sub-micron scale

Nuclear magnetic resonance is arguably one of the most powerful techniques available today to characterize diverse systems. However, the low sensitivity of the standard detection method constrains the applicability of this technique to samples having effective dimensions not less than a few microns. Here, we propose a novel scheme and device for the indirect detection of the nuclear spin signal at a submicroscopic scale. This approach--for which the name Dipolar Field Microscopy is suggested--is based on the manipulation of the long-range nuclear dipolar interaction created between the sample and a semiconductor tip located close to its surface. After a preparation interval, the local magnetization of the sample is used to modulate the nuclear magnetization in the semiconductor tip, which, in turn is determined by an optical inspection. Based on results previously reported, it is shown that, in principle, images and/or localized high-resolution spectra of the sample can be retrieved with spatial resolution proportional to the size of the tip.     

Electric field gradient and atomic position for Se in MoSe2

Hyperfine Interactions - We have measured the nuclear quadrupole interaction at 77Se in the layer compound semiconductor MoSe2 by γ–γ PAC in the decay of 77Br following...     

Determination of the electric field gradient asymmetry from 2D nutation NQR spectra of 75As nuclei in oriented samples of As2Se3 semiconductor

The method of two-dimensional nutation nuclear quadrupole resonance in time domain is used to study the chalcogenide semiconductor As(2)Se(3). In this system, the nuclear quadrupole resonance (NQR) resonance line width is as large as 10 MHz; therefore, the radiofrequency field produced by a pulsed NQR spectrometer can excite only a portion of the nuclear spins. The proposed method relies on polarizing the melted glass specimen in a strong magnetic field so that orientational disorder is partially removed. After hardening the sample is placed in a spectrometer r.f. coil in such a way that that the axes of sample polarization and r.f. coil coincide. We demonstrate the application of this method to determine eta in glassy As(2)Se(3).     

Generating entanglement and squeezed states of nuclear spins in quantum dots

We present a scheme for achieving coherent spin squeezing of nuclear spin states in semiconductor quantum dots. The nuclear polarization dependence of the electron spin resonance generates a unitary evolution that drives nuclear spins into a collective entangled state. The polarization dependence of the resonance generates an area-preserving, twisting dynamics that squeezes and stretches the nuclear spin Wigner distribution without the need for nuclear spin flips. Our estimates of squeezing times indicate that the entanglement threshold can be reached in current experiments.     

电阻式核磁共振测量的最新进展

电阻式核磁共振(RDNMR)测量是1988年由德国马普所的von Klitzing研究小组针对GaAs二维电子气中少量核自旋的探测而提出的一种具有超高灵敏度的实验技术. 目前, RDNMR已经成为研究单层或双层GaAs二维电子气核自旋和电子自旋特性的重要手段. 由于为实现电阻式核磁共振测量所建立的动态核极化方法强烈依赖于GaAs特有的材料属性, 至今这一技术一直没有扩展应用到其他半导体低维系统中. 最近,本研究小组发展了一种动态核极化新方法,成功实现了对典型窄带半导体锑化铟(InSb) 二维电子气的电阻式核磁共振测量.本文在介绍电阻式核磁共振测量工作原理及已建立的典型动态核极化方法的基础上,着重讨论所提出的动态核极化新方法的机理、 实验结果以及对今后研究的展望.     

Direct observation of the electron spin relaxation induced by nuclei in quantum dots

We have studied the electron spin relaxation in semiconductor InAs/GaAs quantum dots by time-resolved optical spectroscopy. The average spin polarization of the electrons in an ensemble of p-doped quantum dots decays down to 1/3 of its initial value with a characteristic time T(Delta) approximately 500 ps, which is attributed to the hyperfine interaction with randomly oriented nuclear spins. We show that this efficient electron spin relaxation mechanism can be suppressed by an external magnetic field as small as 100 mT.     

Optoelectronic Devices: Design,Modeling, and Simulation,by Xun Li

A historical survey of the development of solid-state detectors is given, and it is shown why semiconductor detectors are superior to the earlier crystal counters. The physical processes which occur during the detection of nuclear radiation in a solid-state device are considered in detail, and the merits of the reverse-biased semiconductor junction in silicon or germanium are set out. Factors which determine the energy resolution of such a detector are analysed, and also the effects of radiation damage. The preparation of such detectors is not treated in detail, but the physical principles on which the important types of detector depend are described. The final section surveys the field of applications of solid-state detectors in nuclear physics, radiochemical analysis, space research, medicine and biology.     

Entanglement between nuclear spin and field mode in GaAs semiconductors

In this paper we investigate entanglement between the nuclear spin and field mode in a GaAs semiconductor. The eigenfuctions of nuclear spin in the quantized external field are obtained and thus the von Neumann entropy is evaluated explicitly. It is shown that the von Neumann entropy monotonously increases with the spin-field coupling constant but monotonously decreases with the anisotropy energy.     

Effects of inversion asymmetry on electron-nuclear spin coupling in semiconductor heterostructures: possible role of spin-orbit interactions

We show that electron-nuclear spin coupling in semiconductor heterostructures is strongly modified by their potential inversion asymmetry. This is demonstrated in a GaAs quantum well, where we observe that the current-induced nuclear spin polarization at Landau-level filling factor nu=2/3 is completely suppressed when the quantum well is made largely asymmetric with gate voltages. Furthermore, we find that the nuclear spin relaxation rate is also modified by the potential asymmetry. These findings strongly suggest that even a very weak Rashba spin-orbit interaction can play a dominant role in determining the electron-nuclear spin coupling.     

Optical nuclear spin polarization in quantum dots

Hyperfine interaction between electron spin and randomly oriented nuclear spins is a key issue of electron coherence for quantum information/computation. We propose an efficient way to establish high polarization of nuclear spins and reduce the intrinsic nuclear spin fluctuations. Here, we polarize the nuclear spins in semiconductor quantum dot(QD) by the coherent population trapping(CPT) and the electric dipole spin resonance(EDSR) induced by optical fields and ac electric fields. By tuning the optical fields, we can obtain a powerful cooling background based on CPT for nuclear spin polarization. The EDSR can enhance the spin flip–flop rate which may increase the cooling efficiency. With the help of CPT and EDSR, an enhancement of 1300 times of the electron coherence time can be obtained after a 10-ns preparation time.     

NMR 63.65Cu in a Local Field and Relaxation of Nuclear Spins in a CuFeS2 Magnetic Semiconductor

Applied Magnetic Resonance - The results of the study of the spectral and relaxation parameters of 63.65Cu nuclear magnetic resonance (NMR) in a local field in natural samples of the semiconductor...     

Multilayer Semiconductor Charged-Particle Spectrometers for Accelerator Experiments

The current state of studies in the field of development of multilayer semiconductor systems (semiconductor detector (SCD) telescopes), which allow the energy to be precisely measured within a large dynamic range (from a few to a few hundred MeV) and the particles to be identified in a wide mass range (from pions to multiply charged nuclear fragments), is presented. The techniques for manufacturing the SCD telescopes from silicon and high-purity germanium are described. The issues of measuring characteristics of the constructed detectors and their impact on the energy resolution of the SCD telescopes and on the quality of the experimental data are considered. Much attention is given to the use of the constructed semiconductor devices in experimental studies at accelerators of PNPI (Gatchina), LANL (Los Alamos) and CELSIUS (Uppsala).     

Quantum diffusion of muonium in GaAs

The diffusion rate of muonium in the III–V compound semiconductor GaAs has been determined from measurements of muon spinT ₁ relaxation induced by motion in the presence of nuclear hyperfine interactions. It is shown for the first time in a semiconductor that (a) there is a crossover of the transport mechanism at about 90 K from stochastic to zero-phonon hopping, as evidenced by a steep rise in the hop rate at lower temperatures, and that (b) the muonium diffuses at the hop rate of 10¹⁰ s⁻¹ (corresponding diffusion constantD≈10⁻⁶ cm²s⁻¹) at lower temperatures as well as at room temperature.