Switching current noise and relaxation of ferroelectric domains

We simulate field-induced nucleation and switching of domains in a three-dimensional model of ferroelectrics with quenched disorder and varying domain sizes. We study (1) bursts of the switching current at slow driving along the hysteresis loop (electrical Barkhausen noise) and (2) the polarization reversal when a strong electric field was applied and back-switching after the field was removed. We show how these processes are related to the underlying structure of domain walls, which in turn is controlled by the pinning at quenched local electric fields. When the depolarization fields of bound charges are properly screened we find that the fractal switching current noise may appear with two distinct universal behaviors. The critical depinning of plane domain walls determines the universality class in the case of weak random fields, whereas for large randomness the massive nucleation of domains in the bulk leads to different scaling properties. In both cases the scaling exponents decay logarithmically when the driving frequency is increased. The polarization reverses in the applied field as a power-law, while its relaxation in zero field is a stretch exponential function of time. The stretching exponent depends on the strength of pinning. The results may be applicable for uniaxial relaxor ferroelectrics, such as doped SBN:Ce. Received 7 February 2002 / Received in final form 10 April 2002 Published online 9 July 2002     

铁电体中新畴成核经典模型的改进

新畴成核是外加低场下铁电体中铁电畴反转的一个重要的过程.首先介绍了新畴成核的经典模型,采用该模型研究了铁电畴反转的新畴成核过程,发现理论计算的成核速率与外场关系和实验观测结果不一致.在Tagantsev模型的基础上,选取不同的成核形状对新畴成核的经典模型进行了改进,并获得了和实验观测相符的理论计算结果. 关键词： 铁电体 铁电畴 成核速率     

Polarization switching without domain formation at the intrinsic coercive field in ultrathin ferroelectric PbTiO₃

Polarization switching in ferroelectrics has been thought to occur only through the nucleation and growth of new domains. Here we use in situ synchrotron x-ray scattering to monitor switching controlled by applied chemical potential. In sufficiently thin PbTiO? films, nucleation is suppressed and switching occurs by a continuous mechanism, i.e., by uniform decrease and inversion of the polarization without domain formation. The observed lattice parameter shows that the electric field in the film during switching reaches the theoretical intrinsic coercive field.     

Easy collective polarization switching in ferroelectrics

The actual mechanism of polarization switching in ferroelectrics remains a puzzle for many decades, since the usually estimated barrier for nucleation and growth is insurmountable ("paradox of the coercive field"). To analyze the mechanisms of the nucleation we consider the exactly solvable case of a ferroelectric film with a "dead" layer at the interface with electrodes. The classical nucleation is easier in this case but still impossible, since the calculated barrier is huge. We have found that the interaction between the nuclei is, however, long range, hence one has to study an ensemble of the nuclei. We show that there are ensembles of small (embryonic) nuclei that grow without the barrier. We submit that the interaction between nuclei is the key point for solving the paradox.     

Homogeneous switching in ultrathin ferroelectric films

It is well known that there are two possible switching mechanisms in ferroelectric crystals and films (see, e.g., Tagantsev et al 2010 Domains in Ferroic Crystals and Thin Films (Berlin: Springer)). The first mechanism, which follows from the mean-field theory of Landau-Ginzburg, is a homogeneous one and does not connect domains. This mechanism was never observed before 1998. The second mechanism, connected with nucleation and domain movement, is common for the ferroelectrics and is well known from the time of domain discovery (1956). In the present paper the existence of a homogeneous mechanism of switching in ultrathin copolymer films is confirmed by piezoresponse force microscopy. The results of the present paper permit us to suppose that homogeneous switching exists in other ultrathin ferroelectric films.     

Effect of Ni doping on ferroelectric and dielectric properties of strontium barium niobate crystals

The influence of Ni doping on the ferroelectric and dielectric properties have been examined in Sr_0.61Ba_0.39Nb₂O₆ (SBN:61) relaxor crystals. The dopants introduced into SBN:61 crystals promote the switching process by reducing the value of threshold nucleation field, and thus coercive field. We present real-time studies of domain nucleation and growth processes in doped SBN:61 by the nematic liquid crystal (NLC) decoration technique. The broad phase transition and low-frequency dielectric dispersion that are exhibited by doped SBN:61 samples have a strong link to the configuration of the ferroelectrics microdomains, which in turn is strongly determined by Ni ions concentration.     

Unusual domain evolution in semiconducting ferroelectrics: A phase field study

The effect of electrical conductivity on the domain evolution of semiconducting ferroelectrics is investigated using a phase field model which includes the drift of space charges. Phase field simulations show that the tail-to-tail 90° charged domain wall appears during the domain formation in the semiconducting ferroelectrics at zero field, which is prohibited in common insulating ferroelectrics. Due to the screening of polarization charges, the domain switching takes place through the motion of head-to-head 180° charged domain wall in the semiconducting single-domain ferroelectrics subjected to an electric field. Comparing to the insulating ferroelectrics, the semiconducting ferroelectrics have a lower speed of domain evolution due to the decrease of mobility of charged domain walls. The response of semiconducting ferroelectrics to a mechanical load is also found different from that of insulating ferroelectrics.     

Switching kinetics of ferroelastic ferroelectrics

Switching kinetics of uniaxial ferroelastic ferroelectrics (FFs) in external electric and stress fields is studied using classical theory of nucleation and growth. The stage in which the polarization and deformation reversal involves the main body of the FF and the final stage (Ostwald ripening) of the FF switching are studied with allowance for the change in the repolarization and redeformation during the phase transition. The time dependences of the repolarization and redeformation are found, and equations are derived from which the polarization current and the deformation flux, as well as their time dependence, can be calculated. The calculated main characteristics of the FF switching are compared with the experimental data for switching of Rochelle salt single crystals.     

A viscoelastic model of polarization switching in polymer ferroelectrics

The theoretical aspects of the viscoelastic model for polarization switching in ??soft?? organic ferroelectrics have been considered. The model describes the amplitude-frequency dependences of the hysteresis loops obtained upon polarization switching in thin films of the ferroelectric copolymer poly(vinylidene fluoride-trifluoroethylene).     

Thermodynamics and kinetics of the initial stages of polarization switching in ferroelectrics

The thermodynamics and kinetics of polarization switching in ferroelectrics are studied in the specific case of switching in intrinsic ferroelectrics with 180° domains. The initial stage of the switching in the region of weak metastability is analyzed. An expression relating the critical domain size to the switching field is derived. An equation describing the evolution of the size distribution function of the switched domains is obtained. Expressions for calculating the number of polarization switching nuclei as a function of the switching field are derived.     

Theory of switching of multiaxial ferroelectrics (Initial stage)

The classical theory of nucleation and growth is used to study the thermodynamics and kinetics of switching of multiaxial ferroelectrics. The initial stage of 180°-and 90°-domain switching is studied in the tetragonal, orthorhombic, and trigonal phases. The multidimensional kinetic theory of first-order phase transitions is applied to describe the initial stage of switching of ferroelectric crystals in the general case where three-dimensional growth (along the radius and height) of repolarized domains occurs. The energy of nucleus formation is calculated in the vicinity of the saddle point of an activation barrier in the space of sizes and shapes, and the dependence of the critical domain size on the switching field is found. The two-dimensional Fokker-Planck kinetic equation is reduced to a one-dimensional Zel’dovich equation, and a stationary solution to the Zel’dovich equation is obtained. The diffusion coefficients are derived in the size space for the normal and layer-by-layer mechanisms of domain growth. The main characteristic of the initial switching stage, namely, the steadystate flux of repolarized domains, is found as a function of the applied field.

     

Polarization switching kinetics in ferroelectrics in the region of strong metastability

The thermodynamics and kinetics of polarization switching in ferroelectrics are studied in the framework of the field theory in the vicinity of the critical point of first-order phase transitions. The study is exemplified by the switching of intrinsic ferroelectrics with 180° domains. An expression describing the dependence of the domain critical size on the switching field is derived. The switching process is studied at high switching fields. Relationships for calculating the field dependence of the number of switched domains are obtained.     

Potts-Ising model for simulation of polarization switching in polycrystalline ferroelectrics

This paper proposes a scheme based on the Potts and Ising models for simulating polarization switching of polycrystalline ferroelectrics using the Monte Carlo method. The polycrystalline texture with different average grain size is produced from the Potts model. Then Ising model is implemented in the polycrystalline texture to produce the domain pattern and hysteresis loop. The domain patterns and hysteresis loops have been obtained for polycrystalline texture with different average grain size. From the results of domain pattern evolution process under an applied electric field using this scheme, an extended domain, which covers more than one grain with polarization aligned roughly in the same direction, has been observed during the polarization reversal. This scheme can well reproduce the basic properties of polycrystalline ferroelectrics and is a valuable tool for exploring the physical properties of polycrystalline ferroelectrics.     

Polarization switching kinetics in ferroelectrics

The switching kinetics in ferroelectrics in the bulk polarization switching stage and in the final stage of the process are studied. Consideration is given to the specific case of switching of intrinsic ferroelectrics with 180° domains. A complete system of equations describing the switching processes and taking into account the change in repolarization in the course of a phase transformation is derived. The solution of this system is found. All the main characteristics of the switching process are calculated; namely, the evolution of the domain size distribution function is revealed and the time dependences of the domain density and flux are determined. An expression describing the variation in repolarization with time is obtained. The mechanisms of domain growth are studied. An equation for calculating the switching current and its variation with time is derived. A method is proposed for determining a number of constants for ferroelectric crystals by studying the switching current evolution.     

Two-dimensional simulation of the polarization switching in ferroelectrics

The main switching properties in ferroelectrics are simulated within the framework of the extended Ishibashi dipole-lattice model including the dipole-dipole interaction in a two-dimensional case. The mechanism of the polarization reversal is modeled in the two-dimensional case. The results of the modeling are in a good agreement with experimental data for the set of materials.     

Domain wall nucleation and propagation in spin-transfer torque switching with thermal effects

We conduct micro-magnetic simulations to study spin-transfer torque induced magnetization switching in perpendicular magnetic tunneling junctions. The effects of current densities and temperatures on the switching processes are studied in details. We then proposed an approach to compute the deterministic switching time by taking thermal-effect into account. The switching time is less temperature-dependent under higher current density; however, as the current density decreases, the effect of temperature on the switching time becomes more and more significant. The switching process with micro-magnetic simulations is shown to be via domain wall nucleation and propagation. The phenomena are consistent with the recent experimental found-out. We further propose a method to compute the switching time based on domain wall nucleation and propagation theory, and compare the switching time with those from macro-spin approximation. It is found the switching times from the micro-magnetic simulations are much shorter than that from the macro-spin approximations. Macro-spin approximation over-estimates the switching times due to its coherent rotation assumptions.     

Electromechanical cracking in ferroelectrics driven by large scale domain switching

Experimental results indicate three regimes for cracking in a ferroelectric double cantilever beam (DCB) under combined electromechanical loading. In the loading, the maximum amplitude of the applied electric field reaches almost twice the coercive field of ferroelectrics. Thus, the model of small scale domain switching is not applicable any more, which is dictated only by the singular term of the crack tip field. In the DCB test, a large or global scale domain switching takes place instead, which is driven...     

Analysis of ferroelectric switching in sodium nitrite:poly(vinyl alcohol) nanocomposite films

The Fourier transform infrared (FTIR) spectra and switching current response in sodium nitrite:poly(vinyl alcohol) nanocomposite films have been studied as a function of composition of NaNO₂. The switching current data fitted well to infinite-grain model (IGM) in the region t<t _s and to finite-grain model (FGM) in the region t≥t _s . The microscopic parameters like the dimensionality, the domain wall velocity, and the nucleation rate have been evaluated which provide more physical insight of the switching phenomena in the composite films. The polarization current and nucleation rate are optimum in 50 wt.% composite film and have been discussed in terms of grain size and strain variations with the composition. The effect of applied field and pulse width variation on the switching behavior of 50 wt.% composition has also been studied. The exponential field dependence of the domain wall velocity and the nucleation rate indicate that nucleation mechanism is responsible for switching phenomena in the composite films. The writing pulse width affects significantly on the switching behavior of the composite films.