神光Ⅲ原型全孔径背向散射测量系统研制及应用

为了测量激光与等离子体相互作用产生的散射光份额,获得黑腔耦合效率实验中的激光注入率,研制了基于神光Ⅲ原型装置的全孔径背向散射测量系统。该系统利用聚焦透镜收集散射光,通过离轴抛物面镜进行缩束,并采用二向色镜将散射光分为两个支路后分别进行受激布里渊散射和受激拉曼散射光的能量、时间过程和光谱测量。实验测量了有、无束匀滑条件下的散射光份额。结果表明,在当前实验条件下,通过束匀滑可有效降低散射光份额,提高激光注入率。     

The study of ceramic-like oxide coatings on zirconium produced by plasma treatment in electrolytes

Ceramic-like oxide coatings on zirconium with a thickness of up to 300 μm produced by plasma treatment in an electrolyte demonstrate high thermal resistivity and low thermal conductivity during high-temperature testing in a plasmatron in a plasma flow. Data on the structure of coatings and its changes during thermal testing obtained using the methods of scanning electron microscopy, X-ray diffraction analysis, and nuclear backscattering spectrometry are discussed.     

Magnetic properties of TiO2 rutile implanted with Ni and Co

Single crystals of TiO₂ rutile were implanted with high fluences of Co and Ni ions, aiming at the understanding of the role of these ions in the magnetic properties of the doped oxide. Magnetization and electrical resistivity results as a function of temperature and magnetic field are presented and correlated with information obtained by Rutherford backscattering spectrometry measurements in the same samples.     

Analysis of arsenic range distributions in silicon

MeV⁴He ion backscattering and differential sheet resistivity measurements were made on As implants into silicon at room temperature. Analysis of backscattering measurements yields the projected rangeR _p and projected standard deviation ΔR _p . Over the energy range of 50 to 250 keV, the values ofR _p are found to agree well with LSS theoretical predictions; however, values of ΔR _p are systematically higher than theoretical calculations. Backscattering and differential sheet resistivity measurements on samples annealed at 950°C are in general agreement and indicate diffusional broadening of the profile.     

Superenhanced backscattering of light by nanoparticles

We report a physical explanation for the phenomenon wherein the backscattering of light by dielectric particles of sizes between 100 and 1 nm is enhanced by 7-11 orders of magnitude. The phenomenon involves complex composite interactions between a dielectric microsphere and a nanoparticle positioned in close proximity to the microsphere. We provide both analytical and perturbation analyses that show that the enhanced backscattering intensity of a nanoparticle is proportional to the third power of its size parameter. Potential applications of this phenomenon include visible-light detection, characterization, and manipulation of particles as small as a few nanometers.     

Multiple light scattering from disordered media. The effect of brownian motion of scatterers

We have measured the time autocorrelation function of the light intensity multiply scattered from turbid aqueous suspensions of submicron size polystyrene spheres in directions near backscattering. It is found strongly non-exponential at short times revealing the very fast decay of coherence in extended scattering loops due to the thermal motion of the many spheres involved; the longest living decay time is found remarkably close to the single particle backscattering relaxation time even under conditions of interparticle interactions. These features are only weakly affected by the particular interference effect between time-reversed pairs of loops giving rise to the coherent backscattering enhancement. A simple argument is presented which accounts for these observations.Dedicated to Prof. Klaus Dransfeld on the occasion of his 60^th birthday     

Channeling study of boron implanted silicon: Liquid nitrogen temperature implantation

Silicon samples have been boron implanted at 150 keV at liquid nitrogen temperature to a dose of 3.6 × 10¹⁵/cm². This dose rendered the implanted layer amorphous as viewed by helium ion backscattering. Four kinds of room temperature measurements were made on the same set of samples as a function of the isochronal annealing temperature. The measurements made were the determination of the substitutional boron content by the channeling technique using the B¹¹(p, α) nuclear reaction, observation of the disorder by helium ion backscattering, determination of the carrier concentration by van der Pauw Hall measurements, and the sheet resistivity by four point probe measurements. These measurements are compared with results from samples implanted at room temperature. The carrier concentration correlates well with the substitutional boron content for both room temperature and liquid nitrogen temperature implantations. Following annealing temperatures in the 600 to 800°C range, a much larger percentage of the boron lies on substitutional lattice sites, and therefore the carrier concentration is larger, if the implantation is done at liquid nitrogen temperature rather than at room temperature. Following liquid nitrogen temperature implantation, reverse annealing is observed from 600 to 800°C in the substitutional boron content, carrier concentration and sheet resistivity. The boron is more than 90 per cent substitutional after annealing to 1100°C for both the room temperature and liquid nitrogen temperature implantations. The low temperature implantation produced a buried amorphous layer, and this layer was observed to regrow from both the surface and substrate sides at approximately equal rates.     

Simple approach to stimulated backscattering in inhomogeneous plasmas

By means of a simple physical model we investigate how the nonlinear backscattering occuring in laser-plasma interactions is affected by the presence of a density gradient. The analysis reproduces in a direct way recent results for the inhomogeneity threshold and time of growth results which previously were obtained using considerably more sophisticated methods.     

Shot noise in Fabry-Perot interferometers based on carbon nanotubes

We report on shot noise measurements in carbon nanotube based Fabry-Perot electronic interferometers. As a consequence of quantum interference, the noise power spectral density oscillates as a function of the voltage applied to the gate electrode. The quantum shot noise theory accounts for the data quantitatively and allows us to determine directly the transmissions of the two channels characterizing the nanotube. In the weak backscattering regime, the dependence of the noise on the backscattering current is found weaker than expected, pointing either to electron-electron interactions or to weak decoherence.     

Platinum-silicide formation during rapid thermal annealing: Dependence on substrate orientation and pre-implanted impurities

The kinetics of Pt-silicide formation during rapid thermal annealing has been studied as a function of silicon-substrate orientation ((111), (011), and (001)) and type of pre-implanted impurity in the silicon substrate (As, Kr, and Ge). Rutherford backscattering spectrometry, transmission electron microscopy, and four-point probe resistivity measurements were used for this investigation. In the case of Pt₂Si growth, both an orientation and impurity dependence was observed; the PtSi growth, however, was found to be independent of these parameters except in the case of As pre-implantation for which a retardation was found.     

PULSED LASER DEPOSITION AND CHARACTERIZATION OF FERHOELECTHIC Pb(Zr,Ti)O3 THIN FILMS ON SILICON-ON-INSULATOR SUBSTRATES

Ferroelectric Pb(Zr, Ti)O₃ thin films were prepared by pulsed exeimer laser deposition on silicon-on-insulator and Pt-coated silicon-on-insulator substrates, and rapid thermal annealing was per-formed to crystallize the films, Based on the analysis by X-ray diffraction, Rutherford backscattering spectroscopy and measurements of electrical properties, the films were revealed to be polycrystalline perovskite structure with mainly (100) and (110) orientations, and their crystallization was found to be dependent on annealing temperature and annealing time. The films show good ferroelectricity, with P_r=15μC/cm², E_c= 50kV/cm, high resistivity and high dielectric constant.     

Magneto-oscillations due to electron-electron interactions in the ac conductivity of a two-dimensional electron gas

Electron-electron interactions give rise to the correction, deltasigma(int)(omega), to the ac magnetoconductivity, sigma(omega), of a clean 2D electron gas that is periodic in omega_(c)(-1), where omega_(c) is the cyclotron frequency. Unlike conventional harmonics of the cyclotron resonance, which are periodic with omega, this correction is periodic with omega(3/2). Oscillations in deltasigma(int)(omega) develop at low magnetic fields, omega_(c)相似文献   

Resistivity of inhomogeneous quantum wires

We study the effect of electron-electron interactions on the transport in an inhomogeneous quantum wire. We show that contrary to the well-known Luttinger liquid result, nonuniform interactions contribute substantially to the resistance of the wire. In the regime of weakly interacting electrons and moderately low temperatures we find a linear in T resistivity induced by the interactions. We then use the bosonization technique to generalize this result to the case of arbitrarily strong interactions.     

Tantalum and cobalt suicides: Temperature sensor applications

Ion bombardment induced mixing of Ta-Si films has been studied using 400 keV argon ions. Doses varied from 7×10¹⁴ to 1×10¹⁷ Ar⁺ cm^–2 with post-bombardment anneals of 180–900 s at temperatures in the range 600–860 °C using radiant heating. Silicide uniformity and stoichiometry were determined using alpha backscattering spectrometry. Optimum fabrication parameters were determined with regard to subsequent material sheet resistivity, temperature coefficient of resistance and application as a temperature sensing material. Similar measurements were made on CoSi₂ layers prepared by annealing ion bombarded samples and comparison with silicide films arising from purely thermal annealing was made.CoSi₂ was found to be the more suitable material for temperature-sensor applications, showing a positive linear variation in sheet resistivity in the range 0–400 °C for samples which could be prepared simply and reproducibly.     

NaV2O4: a quasi-1D metallic antiferromagnet with half-metallic chains

NaV2O4 crystals were grown under high pressure using a NaCl flux, and the crystals were characterized with x-ray diffraction, electrical resistivity, heat capacity, and magnetization. The structure of NaV2O4 consists of double chains of edge-sharing VO6 octahedra. The resistivity is highly anisotropic, with the resistivity perpendicular to the chains more than 20 times greater than that parallel to the chains. Magnetically, the intrachain interactions are ferromagnetic and the interchain interactions are antiferromagnetic; 3D antiferromagnetic order is established at 140 K. First-principles electronic structure calculations indicate that the chains are half-metallic. Interestingly, the case of NaV2O4 seems to be a quasi-1D analogue of what was found for half-metallic materials.     

Theoretical Analysis of Rayleigh Backscattering Noise in Fiber Raman Amplifiers

In this paper, a new theoretical model for Rayleigh backscattering （RB） analysis of fiber Raman amplifiers is proposed. The model includes all the interactions among the pumps, signals, and all orders of RB. The results show that the higher order RB has a negligible influence on the performance of the amplifier. The co-propagating and counterpropagating RB power of the signal grow quadratically with the net-gain of the amplifier. The signal to double Rayleigh backscattering noise ratio （OSNRDRB ） of backward-pumped FRAs is better than that of the forward-pumped ones at high net-gain level （〉 13 dB）, while at low net-gain level the OSNRDRB of the forward-pumped FRAs is slightly better than that of the backward-pumped ones.     

Online ef fective backscattering estimation for ring laser gyro

Lock-in phenomenon in ring laser gyroscopes is directly related to effective backscattering,which includes both backscattering and nonuniform loss.Effective backscattering often differs in different states and can only be reflected in a working state via online estimation in the working state.Moreover,effective backscattering can result in the intensity modulation of beams in the opposite directions.The effective backscattering parameters can be obtained by measuring the weak modulations in the intensity signals under different rotation rates and by using the curve-fitting method.This letter demonstrates the online estimation of backscattering.     

Effects of fermi liquid interactions on the shot noise of an SU(N) Kondo quantum dot

We study shot noise in the current of quantum dots whose low-energy behavior corresponds to an SU(N) Kondo model, focusing on the case N=4 relevant to carbon nanotube dots. For general N, two-particle Fermi-liquid interactions have two distinct effects: they can enhance the noise via backscattering processes with an N-dependent effective charge, and can also modify the coherent partition noise already present without interactions. For N=4, in contrast with the SU(2) case, interactions enhance shot noise solely through an enhancement of partition noise. This leads to a nontrivial prediction for experiment.     

气泡浓度对海洋激光雷达后向散射特性的影响

对不同浓度气泡幕水下激光雷达的后向散射特性进行了理论分析和实验研究。实验结果表明：由于水中气泡群后向散射的原因,在水下激光雷达整体后向散射信号的回波曲线上,除了水体后向散射导致的信号峰以外,还出现因气泡散射而导致的散射峰,该散射峰叠加在水体的后向散射信号峰上,其位置与水中气泡幕的位置直接相关,而其幅值则受气泡幕的浓度影响。随着气泡幕浓度的增大,其后向散射峰幅值相应增大,这一点与理论分析结果一致,而回波峰值的变化趋势则主要受水体质量的影响。