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从中能电子向前散射产生的实空间图像研究了Cu(111)1×1,Si(111)(31/2×31/2)R30°-In及Ge(111)(31/2×31/2)R30°-Ag的表面结构.Cu(111)1×1的图像不仅说明表面有三重旋转轴对称性,而且还表明fcc结构一直保持到最表面一层原子.Si(111)(31/2×31/2)R30°-In表面的图像说明In原子占据T4位,而不是H3位.Ge(111)(31/2×31/2)R30°-Ag的图像说明HCT模型是正确的.这些成功的应用说明从中能电子向前散射图像可以直观而且快捷地获得表面结构类型的可靠信息,而无需类似于低能电子衍射(LEED)表面结构分析那样的复杂计算
关键词: 相似文献
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The atomic and electronic structures of T1 and In on Si(111) surfaces are investigated using the firstprinciples total energy calculations. Total energy optimizations show that the energetically favored structure is 1/3 ML T1 adsorbed at the T4 sites on Si(111) surfaces. The adsorption energy difference of one T1 adatom between (√3 × √3) and (1 × 1) is less than that of each In adatom. The DOS indicates that TI 6p and Si 3p electrons play a very important role in the formation of the surface states. It is concluded that the bonding of TI adatoms on Si(111) surfaces is mainly polar covalent, which is weaker than that of In on Si(111). So T1 atom is more easy to be migrated than In atom in the same external electric field and the structures of T1 on Si(111) is prone to switch between (√3 × √3) and (1 × 1). 相似文献
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为探索不同的极化条件对分子取向的影响,用旋涂法制备了偶氮主客体掺杂薄膜,并用电晕极化的方法分别在不同温度和厚度条件下使分子取向,通过测量极化前后紫外-可见吸收谱,研究了平均取向因子的变化,并和二次谐波产生结果进行了比较。实验结果表明:对于厚度相同的偶氮薄膜,随着温度的升高,平均取向因子增大,但二次谐波信号强度先增大后减小;温度越接近聚合物玻璃转变温度,分子越容易取向,但温度过高,聚甲基丙烯酸甲酯变为粘滞态,部分偶氮分子容易在高温下蒸发掉,导致二次谐波信号强度降低,而平均取向因子增大;随着薄膜厚度的增大,针-板电极电场造成薄膜内部电场分布的不均匀性增加,极化效率降低,平均取向因子不断减小,二次谐波信号强度先增大后减小。 相似文献
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《中国光学与应用光学文摘》2006,(4)
O484.1 2006043380ZnO/AlN/Si(111)薄膜的外延生长和性能研究=Growthand properties of ZnO fil m grown on Si (111) substratewith Al N buffer by MOCVD[刊,中]/郑畅达(南昌大学材料科学研究所教育部发光材料与器件工程研究中心.江西,南昌(330047)) ,王立…∥光学学报.—2006 , 26(3) .—463-466采用低温Al N为缓冲层在Si(111)衬底上生长出具有较高结晶质量和少裂纹的ZnO马赛克结构单晶薄膜。薄膜的生长为准二维过程,生长速率4 .3μm/h;样品表面裂纹密度仅为20 cm-1,3μm×3μm范围的原子力显微镜均方根粗糙度为1 .5 nm;低温10 … 相似文献
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测量了Si(100)(2×1)-H表面和Si(100)(3×1)-H表面的反射二次谐波强度随温度的变化关系,并与清洁的Si(100)(2×1)表面进行了比较。Si(100)(2×1)表面和Si(100)(3×1)-H表面的二次谐波强度随温度的上升而单调地减小,Si(100)(2×1)-H表面二次谐波强度随温度的变化不是单调的,约在470K时信号最大。可以根据二次谐波信号的强度及其随温度的变化关系来确定样品温度和表面结构。 相似文献
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The isothermal desorption of SiO from the Si(100) and Si(111) surfaces was investigated by means of optical second-harmonic generation (SHG). Due to the high adsorbate sensitivity of this method, desorption rates could be measured over a wide range from 10−1 to 10−6 ML s−1. From their temperature dependence between 780 and 1000 K, activation energies of EA=3.4±0.2 eV and EA=4.0±0.3 eV and pre-exponential factors of ν0=1016±1 s−1 and ν0=1020±1 s−1 for SiO desorption were obtained for Si(100) and Si(111), respectively. In the case of the Si(100) surface, a pronounced decrease of the first-order rate constants was observed upon increasing the initial coverage from 0.02 to 0.6 ML. The results are interpreted in terms of coverage-dependent oxygen-binding configurations, which influence the stability of the oxide layer. 相似文献
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采用密度泛函理论研究了Ru(0001) /BaO表面的原子层结构和氮分子的吸附性质. 研究结果表明, 在低覆盖度下氧化钡倾向于以相同的构型形成Ru(0001) 表面原子层. 在此构型中, 氧原子位于表面p(1× 1) 结构的hcp谷位, 而钡原子则位于同一p(1× 1) 结构的顶位附近. 钌氧键键长等于0.209 nm, 比EXAFS的实验值大0.018 nm. 在Ru(0001) /BaO表面氮分子倾向吸附于钡原子附近. 相应位置的氮分子吸附能位于0.70到0.87 eV之间, 大于氧原子附近的氮分子吸附能. 钡原子附近的钌原子对氮分子具有更强的活化性能. 相应位置的氮分子拉伸振动频率等于1946 cm- 1, 比氧原子附近的最大分子振动频率小约130 cm-1. Ru(0001) /BaO表面氮分子键强度介于清洁Ru(0001) 和Ru(0001) /Ba表面之间. Ru(0001)/BaO表面不同位置的氮分子吸附性质差异是由钡和氧原子化学性质不同造成的. 表面钡原子的作用能够减少吸附氮分子的σ*轨道电子密度, 增加π*轨道电子密度, 从而增强氮分子和钌原子间的轨道杂化作用, 弱化氮分子键. 相似文献
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运用荧光光谱法研究黄芩苷与牛血清白蛋白(BSA)在生理条件下(pH 7.4)的相互作用机制;紫外分光光度法检测黄芩苷对BSA酪氨酸残基硝化的影响。实验结果表明:黄芩苷对BSA的荧光猝灭类型为静态猝灭;T=287K和T=310K时,二者的结合常数Kn分别为1.02103×108L·mol-1和8.75709×107L·mol-1;二者的结合位点数n分别为1.62463和1.62899。由热力学参数确定黄芩苷与BSA之间的作用力类型为静电作用力。采用同步荧光技术确定了黄芩苷对BSA构象的影响。结合黄芩苷与牛血清白蛋白的相互作用机理,讨论了黄芩苷抑制蛋白质酪氨酸硝化的机制。 相似文献
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Germanium ions were implanted into SiO2 films which were thermally grown on crystalline Si at an energy of 60 keV and with doses of 1×1015 and 1×1016 cm-2.Under an ultraviolet excitation of ~5.0 eV,the implanted f ilms annealed at various temperatures exhibit intense violet luminescence with a peak at 396 nm.It is ascribed to the T1→S0 transition in GeO,which was formed during implantation and annealing process. 相似文献
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Partially oriented and highly textured diamond films on Si( 111 ) substrates were achieved by hot-filament chemical vapor deposition(HFCVD). High nucleation density greater than 5×108cm-2 was realiged in 3 min by near-surface glow discharge. The os-grown films were characterized by scanning electron microscopy(SEM), X-ray diffraction(XRD) and Raman spectroscopy. It was found that by adding a small amount of oxygen to the mixture of CH4/H2, the appearance of facet(111) was well controlled, and the secondary nucleation on the facet(111) was suppressed greatly. Growth feature of homoepitaxy on diamond (111) surface was demonstrated to be in Stranski-Krastanov model by SEM. 相似文献
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利用混合物理化学气相沉积法(HPCVD)在MgO(111)衬底上制备了干净的MgB2超导超薄膜. 在背景气体压强, 载气氢气流量以及沉积时间一定的情况下, 改变B2H6的流量, 制备得到不同厚度系列的MgB2超导薄膜样品, 并测量了其超导转变温度 Tc, 临界电流密度Jc等临界参量. 该系列超导薄膜沿c轴外延生长, 表面具有良好的连接性, 且有很高的超导转变温度Tc(0) ≈ 35-38 K和很小的剩余电阻率ρ(42 K) ≈ 1.8-20.3 μΩ·cm-1. 随着膜厚的减小而减小, 临界温度变低, 而剩余电阻率变大. 其中20 nm的样品在零磁场, 5K时的临界电流密度Jc ≈ 2.3×107 A/cm2. 表明了利用HPCVD在MgO(111)衬底上制备的MgB2超薄膜有很好的性能, 预示了其在超导电子器件中广阔的应用前景.
关键词:
MgO(111)衬底
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混合物理化学气相沉积 相似文献