A dynamic phase-conjugate mirror based on CdF<Subscript>2</Subscript> crystals with bistable centers

A four-wave phase-conjugate mirror on reflection gratings recorded in a CdF₂ crystal with bistable centers has been studied experimentally. The mirror reflectivity and speed have been measured, and the coefficient of third-order nonlinearity of this medium has been estimated. The quality of the wave reflected from the phase-conjugate mirror has been investigated in model experiments.     

New class of holographic materials based on CdF<Subscript>2</Subscript> semiconductor crystals with bistable centers. I. Role of covalence in the formation of bistable centers

Calculations of the electronic structure of In, Ga, and Al impurity centers in a CdF₂ crystal in the cluster approximation using the method of scattered waves are made. The first two impurities form in additively colored crystals bistable centers having a ground two-electron (deep) state and a metastable hydrogen-like (shallow) state. A change in the nature of the chemical bond on doping a crystal with these impurities is traced, which consists in a considerable increase of its covalent component. A change for deep In and Ga centers is shown to be caused by the reconstruction of centers in their ground state, and a conclusion about the character of reconstruction is made. This conclusion agrees with recent calculations made for the center structure using the pseudopotential method. Conditions of formation of bistable centers in CdF 2 and their structure in different charge states are discussed.     

Relaxation processes upon photoexcitation of semiconductor CdF<Subscript>2</Subscript> by laser pulses

The microwave-cavity-based technique is used to study the processes of photoionization of electrons from donor levels to the conduction band in semiconductor CdF₂ crystals doped with Y, In, or Ga. The samples were excited by periodic pulses of Nd-laser (λ = 1.06 μm, pulse width ～10 ns) in the temperature range 6–77 K. The transient processes were detected in the absorption and dispersion modes related to variation of the imaginary and real parts of the complex permittivity ?₁ ? i?₂ induced by the light pulses. The observed signals consisted of short peak at t ～ 0, approximately 40–70 ns in length, and a long tail with a duration of ～100 ms. The short peak is likely to be related to the stay of the photoexcited carriers in the conduction band, while the long tail is associated with the processes of excitation relaxation after the electrons coming back to the donor levels of the impurity band. The weak temperature dependence of the width of the peak at t ～ 0 is explained by the tunneling mechanism of relaxation of electrons through the energy (or, probably, spatial) barrier separating the bound and free states of the carriers in the semiconductor CdF₂.     

Microwave measurements of electrical conductivity of CdF<Subscript>2</Subscript> semiconductor crystals

The electrical conductivity of CdF₂ semiconductor crystals is measured using the microwave intracavity technique at a frequency of ～35 GHz. The crystals are activated with yttrium donor impurities and indium and gallium ions forming bistable one-electron donor impurity and two-electron DX centers. The conclusion is drawn that the concentration of electrons in the conduction band of CdF₂: Ga crystals has an anomalously high value. This confirms the results obtained in earlier NMR investigations of CdF₂ semiconductor crystals at room temperature.     

Location of the energy levels of the rare-earth ions in BaF<Subscript>2</Subscript> and CdF<Subscript>2</Subscript>

The location of the energy levels of rare-earth (RE) elements in the energy band diagram of BaF₂ and CdF₂ crystals is determined. The role of RE ³⁺ and RE ²⁺ ions in the capture of charge carriers, luminescence, and the formation of radiation defects is evaluated. It is shown that the substantial difference in the luminescence properties of BaF₂: RE and CdF₂: RE is associated with the location of the excited energy levels in the band diagram of the crystals.     

Effective room-temperature broad-band recording of 3D dynamic holograms in CdF<Subscript>2</Subscript>:Ga crystals

Photochromic CdF₂:Ga crystals with bistable impurity centers were effectively used for the dynamic recording of holograms and readout over the visible and near IR spectral regions at spatial frequencies of up to 5000 mm^?1 at room temperature. The diffraction efficiency of the dynamic holograms was as high as 60% at maximum and exceeded 1% when the beams’ intensities were in the ratio 1:100. As one goes from the low temperatures (≤200 K) to 300 K, the peak diffraction efficiency of the dynamic holograms decreases approximately by a factor of 1.5, while the speed of their response and photosensitivity in the long-wavelength spectral region increases by more than an order of magnitude. For the sake of comparison, the dynamic holograms were recorded under the same conditions as the widely used electrooptical SBN crystals. Comparative analysis ascertained a unique combination of the useful features offered by CdF₂:Ga crystals in holography.     

Jahn-teller chromium ions in CdF<Subscript>2</Subscript> and CaF<Subscript>2</Subscript> crystals: An EPR spectroscopic study in the frequency range 9.3–300 GHz

The bivalent chromium impurity centers in CdF₂ and CaF₂ crystals are investigated using electron paramagnetic resonance (EPR) in the frequency range 9.3–300 GHz. It is found that Cr²⁺ ions in the lattices of these crystals occupy cation positions and form [CrF₄F₄]^6? clusters whose magnetic properties at low temperatures are characterized by orthorhombic symmetry. The parameters of the electron Zeeman and ligand interactions of the Cr²⁺ ion with four fluorine ions in the nearest environment are determined. The initial splittings in the system of spin energy levels of the cluster are measured.     

EPR of trivalent iron centers in SrF<Subscript>2</Subscript>: Fe crystals

Paramagnetic centers of three types are found in SrF₂: Fe(0.2 at. %) crystals. Two types are observed in the untreated crystals, and the third type appears only in the crystals irradiated by x-rays. The EPR spectra of one type of centers in a nonirradiated crystal and of the centers that appear after irradiation are described by the orthorhombic Hamiltonians with an effective spin S _eff = 5/2. In both cases, the centers are observed at 4.2 and 77 K. The principal axes of the spin Hamiltonians for them are along the 〈001〉, 〈1 \(\overline 1 \) 0〉, and 〈110〉 axes. However, the fine-structure parameters of their EPR spectra differ significantly. An analysis of the superhyperfine structure (SHFS) of the EPR spectra shows that the radiation center forms through substitution of a Fe²⁺ ion for a Sr²⁺ cation. Under x-ray irradiation, the Fe²⁺ ion transforms into the Fe³⁺(⁶ A _1g ) state and is displaced to an off-center position along the C ₂ axis of its coordination cube. The absence of a SHFS in the EPR spectra of the orthorhombic centers in a nonirradiated crystal makes it impossible to determine their molecular structure unambiguously. The most probable model is proposed for this structure. The EPR spectra of centers of the third type were observed only at 4.2 K, and the structure of these centers was not studied.     

Local structure of Gd<Superscript>3+</Superscript> and Eu<Superscript>2+</Superscript> impurity centers in a CdF<Subscript>2</Subscript> crystal

The local crystal structure of Gd³⁺ and Eu²⁺ cubic impurity centers in cadmium fluoride is calculated within the shell model in the pair potential approximation. The local compressibility of the cationic and anionic sublattices of the host lattice is determined in the vicinity of the Gd³⁺ (Eu²⁺) impurity ion.     

Optical properties of CdF<Subscript>2</Subscript> in a wide energy range

For either of the two reflection spectra of cadmium difluoride that are known from experiments, a complete set of the fundamental optical functions is calculated in the energy range 4–45 eV with the Kramers-Kronig relationships. The basic features of the optical spectra are established, and a hypothesis for their origin is suggested based on the known theoretical results for the band structure.     

Electrical instability of LiCu<Subscript>2</Subscript>O<Subscript>2</Subscript> crystals

The temperature behavior of I-U curves and the field and temperature dependences of the electrical resistivity and dielectric permittivity of crystals of the LiCu₂O₂ phase have been studied. It was established that the crystals belong to p-type semiconductors and that their static resistivity in the range 80–260 K follows the Mott law ρ=Aexp(T₀/T)^1/4 describing variable-range hopping over localized states. At comparatively low electric fields, the crystals exhibit threshold switching and characteristic S-shaped I-U curves containing a region of negative differential resistivity. In the critical voltage region, jumps in the conductivity and dielectric permittivity are observed. Possible mechanisms of the disorder and electrical instability in these crystals are discussed.     

Dynamics of two-photon picosecond absorption in ZnWO<Subscript>4</Subscript> and PbWO<Subscript>4</Subscript> crystals

A method has been proposed to analyze the dynamics of interband two-photon absorption in a nonlinear medium excited by a sequence of picosecond laser pulses of variable intensity and continuous probe radiation. Induced absorption leading both to hysteresis in the dependence of the absorption on the intensity of laser pump radiation and to the opacity of crystals at the pump wavelength has been revealed in initially transparent ZnWO₄ and PbWO₄ crystals irradiated by a train of 523.5-nm pulses with a duration of 20 ps at pump intensities of 5 to 140 GW/cm². The kinetics of an increase in absorption and its subsequent relaxation at a 523.5-nm picosecond excitation of the crystals have been measured with continuous 633-nm probe radiation. An exponential component of the increase in absorption with the time constant τ = 2−3.5 and 8–9.5 μs depending on the direction of the linear polarization of pump radiation has been revealed at 300 K in ZnWO₄ and PbWO₄ crystals, respectively. The absorption relaxation kinetics in the crystals are complicated and approach an exponential at a late stage with the constant τ = 40−130 and 12–80 ms for the ZnWO₄ and PbWO₄ crystals, respectively.     

A high-stability medium based on CaF<Subscript>2</Subscript>:Na crystals with colloidal color centers: I. Photothermochemical conversion of colloidal color centers in CaF<Subscript>2</Subscript>:Na crystals

Photothermochemical conversion of simple color centers (which include from one to four anionic vacancies) and highly aggregated ones in additively colored crystals of calcium fluoride doped by sodium is studied. The annealing of crystals with a low sodium content in a reducing atmosphere (additive coloration) leads to the predominant formation of simple color centers, which convert into highly aggregated centers under the joint action of heating and irradiation in absorption bands of simple centers. The irradiation of highly aggregated centers into their absorption bands and simultaneous heating causes these centers to convert into simple centers. The additive coloration of crystals with a relatively high sodium content leads to the predominant formation of highly aggregated centers. The heating of these crystals along with the irradiation in absorption bands of highly aggregated centers causes these centers to convert into simple centers. The formation of different color centers in the course of additive coloration of crystals with different impurity content and different results of photothermochemical conversion of centers in these crystals are connected with the dual action of impurities. Anion vacancies, which compensate the charge of the impurity alkali metal, facilitate the aggregation of color centers. At the same time, the alkali impurity stabilizes simple color centers.     

Optical phonons in Rb<Subscript>2</Subscript>TeBr<Subscript>6</Subscript> and Cs<Subscript>2</Subscript>TeBr<Subscript>6</Subscript> crystals

Raman scattering in Rb₂TeBr₆ and Cs₂TeBr₆ crystals is studied. The phonon spectra of the crystals are calculated using the factor group method. The number of Raman-active modes, their symmetries, and selection rules are found. Observed Raman spectrum lines are identified with atomic vibration modes of the crystal.     

Magnetic properties of Pb<Subscript>2</Subscript>Fe<Subscript>2</Subscript>Ge<Subscript>2</Subscript>O<Subscript>9</Subscript> single crystals

Single crystals of Pb₂Fe₂Ge₂O₉ have been grown. They were subjected to X-ray diffraction, magnetic, neutron diffraction, Mössbauer and spin resonance studies. It has been established that Pb₂Fe₂Ge₂O₉ is a weak ferromagnet with a Néel temperature T _N = 46 K, and the exchange and spin-flop transition fields have been estimated. It has been demonstrated that the weak ferromagnetic moment is actually the result of the single-ion anisotropy axes for the magnetic moments of different magnetic sublattices being not collinear.     

Evolution of MgAl<Subscript>2</Subscript>O<Subscript>4</Subscript> crystals in Al-Mg-SiO<Subscript>2</Subscript> composites

The present study analyzes the morphological transformations of reaction products i.e., MgO, MgAl₂O₄ occurring during the reaction between SiO₂ and Al-Mg alloy in Al-Mg-SiO₂ composite processed by the liquid metallurgy technique. Different phases of platelet and hexagonal morphologies are detected and their composition analysis by EDS has confirmed them as being transition phases existing between MgO, MgAl₂O₄ and Al₂O₃. This study has also revealed the gradual transformation of (i) MgO needles to octahedral MgAl₂O₄ through Mg-Al-Si-O and Mg-Al-O transition phases having platelet morphologies and (ii) MgAl₂O₄ to Al₂O₃ through hexagonal transition phases on holding of Al-5Mg-SiO₂ and Al-1Mg-SiO₂ composites respectively at 1023K. Fully developed α-Al₂O₃ crystals are not observed under the present experimental conditions, wherein the Mg content is well above the equilibrium Mg content required for the formation of stable Al₂O₃ (<0.05 wt. %). PACS 05.70.Np     

Backward-wave four-wave mixing and coherent oscillation in CdF<Subscript>2</Subscript>:Ga,Y

Cadmium fluoride doped with Ga and Y is shown to be a suitable medium for backward-wave four-wave mixing with a grating decay time of a few seconds at room temperature. A 3-mm-thick sample ensures amplified phase-conjugate reflectivity and can therefore be used for building a coherent oscillator with a conventional mirror. PACS 42.65.Hw; 42.70.Mp; 42.70.Nq     

Luminescence and electronic excitations in KBe<Subscript>2</Subscript>BO<Subscript>3</Subscript>F<Subscript>2</Subscript> crystals

This paper reports on a study of the dynamics of electronic excitations in KBe₂BO₃F₂ (KBBF) crystals by low-temperature luminescent vacuum ultraviolet spectroscopy with nanosecond time resolution under photoexcitation by synchrotron radiation. The first data have been obtained on the kinetics of photoluminescence (PL) decay, time-resolved PL spectra, time-resolved PL excitation spectra, and reflection spectra at 7 K; the estimation has been performed for the band gap E _g = 10.6−11.0 eV; the predominantly excitonic mechanism for PL excitation at 3.88 eV has been identified; and defect luminescence bands at 3.03 and 4.30 eV have been revealed. The channels of generation and decay of electronic excitations in KBBF crystals have been discussed.     

Recording dynamic holograms in a semiconductor crystal CdF<Subscript>2</Subscript>:In

The kinetics of decay of a phase hologram in a semiconductor CdF₂ crystal with bistable In centers is studied. Kinetic constants of the hologram decay are found, and the potential relief of the bistable center is plotted. The resolving power of the crystal is evaluated and recording of a transparency is demonstrated.     

Recording of dynamic information holograms in a CdF<Subscript>2</Subscript>:In crystal

It is shown that CdF₂:In crystals can be used to record amplitude-phase information holograms in real time. The diffraction efficiency of these holograms is several percent, but they are characterized by a much higher sensitivity in comparison with phase holograms recorded in the transparency region of the crystal. A model experiment on pattern recognition is performed.