Lattice deformation in thin BiFeO3 and Ba0.8Sr0.2TiO3 epitaxial films on (001)MgO single crystalline substrates

Bi_0.98Nd_0.02FeO₃ (BNFO) and Ba_0.8Sr_0.2TiO₃ (BST) epitaxial films produced by rf cathode sputtering on (001)MgO substrates are studied by means of XRD. The thickness dependences of uniform lattice deformations and linear dislocation density, generated due to epitaxial stress relaxation, are plotted.     

Structure and lattice dynamics of heterostructures based on bismuth ferrite and barium strontium titanate

The surface morphology, lattice parameters, and Raman spectra have been investigated at the stages of successive formation of a three-layer heterostructure consisting of epitaxial layers Ba_0.8Sr_0.2TiO₃ (BST) and (Bi_0.98Nd_0.02)FeO₃ (BNFO). The structural distortions arising from sequential deposition of BST/BNFO/BST layers of equal thickness have been determined using X-ray diffraction. It has been found that the degree of tetragonal distortion of the BST film on MgO increases after deposition of the BNFO film on the BST film surface, indicating the appearance of compressive stresses in BST. Based on the analysis of polarized Raman spectra, it has been shown that, in the BNFO layer, there is a new phase state which is not observed in the bulk samples. It has been demonstrated that the degree of tetragonality of the BST film grown on the BNFO surface is higher than that of the BST film grown directly on MgO.     

溶胶-凝胶法制备MgO/(Ba0.8Sr0.2)TiO3多层薄膜及其介电和漏电特性研究

采用改进的溶胶-凝胶方法在LaNiO₃/Si(100)衬底上制备了MgO/(Ba_{0.8Sr0.2)TiO3多层薄膜.实验结果表明，MgO层的引入改变了(Ba0.8}Sr_0.2)TiO₃的介电特性和漏电流行为，使薄膜的漏电 流降低了3个数量级，但介电常数也有相应降低.漏电流的显著降低是由MgO子层的高阻特性 以及微量Mg向(Ba_0.8关键词： 0.8Sr_0.2)TiO₃多层薄膜')" href="#">MgO/(Ba_0.8Sr_0.2)TiO₃多层薄膜 漏电流 介电常 数     

Fabrication and electrical properties of sol-gel-derived Ba0.8Sr0.2TiO3 ferroelectric films from a 0.05-M spin-on solution

Barium strontium titanate (Ba_0.8Sr_0.2TiO₃) films with good ferroelectricity have been obtained by a developed sol-gel processing, using a 0.05-M spin-on solution. X-ray diffraction and Raman spectroscopy investigations showed that the Ba_0.8Sr_0.2TiO₃ film exhibited a tetragonal structure at room temperature. Field-emission scanning electron microscopy measurements revealed that large columnar grains with the size of 100 to 200 nm in the film were formed from the highly dilute spin-on solution with layer-by-layer homoepitaxy. Electrical measurements for the prepared Ba_0.8Sr_0.2TiO₃ film showed a remnant polarization of 3.5 μC/cm², a coercive field of 53 kV/cm, two distinctive phase transitions, lower dissipation factor, and good insulating properties. These results indicate the sol-gel-derived Ba_0.8Sr_0.2TiO₃ film from a 0.05-M solution is suitable for uncooled infrared detector applications. Received: 19 August 1999 / Accepted: 11 October 1999 / Published online: 1 March 2000     

The Field Effect in a Metal–Ferroelectric–Semiconductor System of Multilayer Ferroelectric Films with Various Structure Types

The ability to grow the interfacial defect-poor Sr_0.5Ba_0.5Nb₂O₆ + Ba_0.2Sr_0.8TiO₃ and Ba_0.8Sr_0.2TiO₃ + Ba_0.4Sr_0.6TiO₃ ferroelectric films onto the doped silicon substrates is discussed. A study of piezo-response via the quasi-static method (using the electrode area of 0.07 mm²) reveals that heterostructures possess an initial polarized ferroelectric state with a spontaneous polarization vector perpendicular to the substrate at any type of Si conductivity. The polarized state is established to refer to two-dimension stresses in the ferroelectric, which is tunable through a preprepared Ba_xSr_{1 – x}TiO₃ onto a sublayer substrate as well as to a thickness of this sublayer. Polarization switching in Sr_0.5Ba_0.5Nb₂O₆/Si and Ba_0.8Sr_0.2TiO₃/Si heterostructures under the external field arises at only using the barium–strontium titanate sublayer predeposited onto silicon. A 15% decrease in switching polarization in Ba_0.8Sr_0.2TiO₃/Ba_0.4Sr_0.6TiO₃/Si structures is observed after 500 h.     

Vibrational spectroscopic studies on Ba0.8Sr0.2TiO3 thin films prepared by RF sputtering technique

Thin films of Ba_0.8Sr_0.2TiO₃ have been deposited on p-type Si substrate by radio frequency magnetron sputtering. Polycrystalline bulk Ba_0.8Sr_0.2TiO₃ sample has also been studied for comparison. X-ray diffraction patterns reveal that both the bulk sample and thin films are polycrystalline without any preferential orientation and belong to paraelectric cubic phase. We have compared the room temperature Raman and IR spectra of powder and thin films (both annealed and as-deposited) of Ba_0.8Sr_0.2TiO₃. The extra feature in the Raman spectrum for the annealed film has been explained as due to the presence of intergrain stresses from the submicron size grains in it.     

Sol-gel法制备Bi0.85Nd0.15FeO3多铁性薄膜

利用sol-gel法在Pt/Ti/SiO₂/Si衬底上制备出Bi_0.85Nd_0.15FeO₃薄膜.研究退火温度对其晶相形成的影响,发现在450 ℃退火时,Bi_0.85Nd_0.15FeO₃晶相开始形成,但是结晶较差,而且存在杂相;在500—600 ℃退火可以获得单相Bi_0.85Nd_0.15FeO₃薄膜,退火温度升高有利于其结晶.对600 ℃退火的Bi_0.85Nd_0.15FeO₃薄膜的介电、铁电和电磁性能进行了测试.在测试频率为1 MHz时,其介电常数和介电损耗分别为145,0.032;饱和磁化强度大约为44.8 emu/cm³;剩余极化值(2P_r)大约是16.6 μC/cm². 关键词： sol-gel法 0.85Nd_0.15FeO₃薄膜')" href="#">Bi_0.85Nd_0.15FeO₃薄膜 铁电性能 铁磁性能     

Optical properties of thin epitaxial Ba0.8Sr0.2TiO3 films

The properties of nanodimensional (Ba_0.8, Sr_0.2)TiO₃ films on single-crystal magnesia substrates are studied. The films are applied by rf sputtering and grow in the layer-by-layer mode. The lattice parameters are measured by the X-ray diffraction method. The transmission of the films with different thicknesses is studied in the wavelength range 190?C1100 nm. When analyzing experimental optical parameters, additional relaxation parameters depicting a final lifetime of the oscillator are used to characterize the refractive index and absorption factor in the dispersion relation. Such an approach allows a more accurate approximation of experimental data.     

Characteristics of Ba xSr 1–xTiO 3 thin films grown by pulsed laser ablation of rotating split targets of BaTiO 3 and SrTiO 3

We have grown heterostructures of Ba_xSr_1-xTiO₃(BST)/La_0.7Sr_0.3MnO₃(LSMO) on LaAlO₃(LAO) substrates by the pulsed laser deposition method. BST films with x=0.2,0.5,0.7 and 0.8 have been prepared using a novel rotating split-target arrangement. The lattice constant of the BST films is found to vary linearly with Ba/Sr ratio. An excellent cube-on-cube epitaxial relationship of (100)_BST||(100)_LSMO||(100)_LAO has also been obtained. Scanning electron microscopy studies have revealed smooth and crack-free BST films with a uniform grain size of about 100 nm. Dielectric measurements, made with patterned Au top electrodes and conducting LSMO bottom layers, have shown a maximum permittivity of approximately 280 at 5 kHz in BST films with x=0.7. P–E loop analyses of the Ba_0.7Sr_0.3TiO₃ and Ba_0.8Sr_0.2TiO₃ films have yielded remnant polarization values of 1.66 and 1.81C/cm², respectively. PACS 81.15Fg; 68.55Jk; 77.55+f     

X-Ray diffraction and Raman spectroscopy studies of superlattices BaTiO3/(Ba0.5,Sr0.5)TiO3/SrTiO3

The structural characteristics of the BaTiO₃/(Ba_0.5,Sr_0.5)TiO₃/SrTiO₃ superlattice on a (001) MgO substrate have been studied using X-ray diffraction. The modulation period and unit cell parameters of layers forming the superlattice have been measured. The sizes of coherent scattering regions and average microstrains in the direction perpendicular to the surface have been estimated. The obtained characteristics are compared to those of the two-layer BaTiO₃/(Ba_0.5,Sr_0.5)TiO₃ superlattice. The Raman spectra demonstrate a substantial shift of the soft E(TO) mode in the three-layer superlattice as compared to the position in the two-layer superlattice. The effects observed are associated with a substantial increase in the temperature of the phase transition of the three-layer superlattice to the paraelectric phase.     

High-temperature complex impedance and modulus spectroscopic studies of doped Na<Subscript>0.5</Subscript>Bi<Subscript>0.5</Subscript>TiO<Subscript>3</Subscript>-BaTiO<Subscript>3</Subscript> ferroelectric ceramics

Lead-free Na_0.5Bi_0.5TiO₃ (NBT) and (1 ? x)Na_0.5Bi_0.5TiO₃ + xBaTiO₃ with x = 0.1 and 0.2 (where x = 0.1 and 0.2 are named as NBT1 and NBT2, respectively), (1 ? y)Na_0.5Bi_0.5TiO₃ + yBa_0.925Nd_0.05TiO₃ with y = 0.1 and 0.2 (where y = 0.1 and 0.2 are named as NBT3 and NBT4, respectively)-based relaxor ferroelectric ceramics were prepared using the sol-gel method. The crystal structure was investigated by X-ray diffraction (XRD) at room temperature (RT). The XRD patterns confirmed the presence of the rhombohedral phase in all the samples. The electrical properties of the present NBT-based samples were investigated by complex impedance and the modulus spectroscopy technique in the temperature range of RT–600 °C. The AC conductivity was found to increase with the substitution of Ba²⁺ ions to the NBT sample whereas it significantly decreased with the addition of Nd³⁺ ions. The more anion vacancies in Ba-added samples and the lower anion vacancies in Nd-added samples were found to be responsible for higher and lower conductivities, respectively.     

Valence states of copper atoms in cuprates determined from the change in the electron-capture constant of 64Cu

The change in the ⁶⁴Cu electron-capture constant for the compounds Cu₂O, YBa₂Cu₃O₇, YBa₂Cu₃O₆, Nd₂CuO₄, Nd_1.8Ce_0.2CuO₄, La₂CuO₄, La_1.7Sr_0.3CuO₄, Tl₂Ba₂CaCu₂O₈, and Bi₂Sr₂CaCu₂O₈ has been measured. It is concluded that the copper in YBa₂Cu₃O₇, Nd₂CuO₄, La₂CuO₄, La_1.7Sr_0.3CuO₄, Tl₂Ba₂CaCu₂O₈, and Bi₂Sr₂CaCu₂O₈ is exclusively divalent, whereas in Cu₂O, YBa₂Cu₃O₆, and Nd_1.8Ce_0.2CuO₄ univalent copper is present. Fiz. Tverd. Tela (St. Petersburg) 39, 1793–1794 (October 1998)     

The ac conductivity and complex impedance of CuO-doped (Ba0.5Sr0.5)TiO3 ceramic

The AC conductivity and complex impedance spectroscopy of CuO-doped (Ba_0.5Sr_0.5)TiO₃ ceramic were investigated. X-ray diffraction analysis showed that CuO-doped (Ba_0.5Sr_0.5)TiO₃ has a perovskite structure without any pyrochlore phase. Frequency dependent dielectric permittivity was discussed at a different temperature range. The activation energy was calculated and discussed through the Arrehnius equation from the ac conductivity with different frequency plots. CuO-doped (Ba_0.5Sr_0.5)TiO₃ ceramics have a negative temperature coefficient of resistivity. Dependence of impedance spectroscopy on frequency and temperature showed that the conduction process in the CuO-doped (Ba_0.5Sr_0.5)TiO₃ ceramic follows the thermally activated conduction mechanism.     

Improvement of dielectric tunability and loss tangent of (Ba,Sr)TiO3 thin films with K doping

Ba_0.6Sr_0.4TiO₃ thin films doped with K were deposited on Pt/Ti/SiO₂/Si substrates by chemical solution deposition method. The structure, surface morphology, and dielectric and tunable properties of Ba_0.6Sr_0.4TiO₃ thin films have been studied in detail. The K content in Ba_0.6Sr_0.4TiO₃ thin films has a strong influence on the material's properties including surface morphology, dielectric and tunable properties. It is found that the Curie temperature of K-doped Ba_0.6Sr_0.4TiO₃ films shifts to higher values compared with that of undoped Ba_0.6Sr_0.4TiO₃ thin films, which leads to a dielectric enhancement of K-doped Ba_0.6Sr_0.4TiO₃ films at room temperature. At the optimized content of 0.02 mol, the dielectric loss tangent is reduced significantly from 0.057 to 0.020. Meanwhile, the tunability is enhanced obviously from 26% to 48% at the measured frequency of 1 MHz and the maximum value of the figure of merit is 23.8. This suggests that such films have potential applications for tunable devices.     

Enhanced spontaneous polarization in Sr and Ca co-doped BaTiO3 ceramics

The dielectric and ferroelectric properties of (Ba_xSr_1−x)_0.77Ca_0.23TiO₃ ceramics with x=1 to 0.7 were studied and compared with those of Ba_xSr_1−xTiO₃ and Ba_0.77Ca_0.23TiO₃ ceramics. It has been found that Sr doping of the Ba_0.77Ca_0.23TiO₃ ceramics causes a drastic decrease of the Curie temperature, just like Sr doping of pure BaTiO₃ ceramics, demonstrating a cell volume effect. However, the (Ba_xSr_1−x)_0.77Ca_0.23TiO₃ ceramics with x=0.9 and 0.8 have larger spontaneous polarization than those of the corresponding Ba_xSr_1−xTiO₃ and Ba_0.77Ca_0.23TiO₃ ceramics, along with sufficient insulating properties. The enhancement of their polarization was explained by the increase of the lattice parameter c/a ratio due to the lattice distortion and strain developed in the ceramics.     

Dielectric permittivity dynamics of Ba1−x SrxTiO3 epitaxial films (x=0.75): Microstructure and depolarization effects

Trilayer epitaxial heterostructures including metal oxide electrodes (SrRuO₃, 200 nm) and a sandwiched dielectric layer (Ba_0.25Sr_0.75TiO₃, 700 nm) were grown by laser ablation on (001)LaAlO₃ substrates. The maximum permittivity of the Ba_0.25Sr_0.75TiO₃ layer (?′/?₀≈3700) was obtained at T _M =160 K and an external electric field E≈10⁶ V/m. The ?′(T) dependence for the Ba_0.25Sr_0.75TiO₃ layer in the paraelectric phase is well fitted by the Curie-Weiss relation, with the Curie constant and the Weiss temperature differing only insignificantly from the corresponding bulk values. The change in the permittivity of the Ba_0.25Sr_0.75TiO₃ layer induced by the application of a ±2.5 V bias voltage to the electrodes reached as high as 85%. The electric-field dependence of the polarization retained clearly pronounced saturated hysteresis loops up to temperatures 10–15 K above T _M .     

Bi0.5Ba0.5FeO3 陶瓷的电性能及阻抗分析

以传统的固相反应法制备了Bi_0.5Ba_0.5FeO₃陶瓷,并采用X射线衍射仪、扫描电子显微镜、直流阻温测试仪和交流阻抗分析仪测试了Bi_0.5Ba_0.5FeO₃陶瓷的微结构和电性能.分析结果表明:Bi_0.5Ba_0.5FeO₃陶瓷具有立方钙钛矿结构,颗粒尺寸约1.0 μm;在16—280 ℃范围内,Bi_0.5Ba_0.5FeO₃陶瓷表现出明显的负温度系数热敏效应,其热敏常数、活化能分别为6490 K及0.558 eV;介电温谱揭示,在280 ℃下Bi_0.5Ba_0.5FeO₃陶瓷材料没有出现相变行为.对于交流阻抗谱,采用3个串联的RQ(R与Q为并联)等效部件来拟合分析,拟合结果表明拟合数据与实验数据高度匹配,且这3个等效部件分别代表晶界、晶粒和晶壳的贡献.3个部件中,晶粒对陶瓷电阻阻值的影响最大,晶壳贡献次之,晶界最小,且3个部件电阻值都显示出负温度系数效应.在25—115 ℃范围内,电学模量虚部峰频与阻抗虚部峰频始终不匹配,意味着Bi_0.5Ba_0.5FeO₃陶瓷体内部一直表现出局域导电机理. 关键词： 0.5Ba_0.5FeO₃陶瓷')" href="#">Bi_0.5Ba_0.5FeO₃陶瓷 电性能 阻抗分析     

Structure and electrical properties of trilayered BaTiO3/(Na0.5Bi0.5)TiO3–BaTiO3/BaTiO3 thin films deposited on Si substrate

Highly (110)-oriented trilayered BaTiO₃ (25 nm) /(Na_0.5Bi_0.5)_0.94Ba_0.06TiO₃ (300 nm) / BaTiO₃ (25 nm) thin films were deposited on Pt/Ti/SiO₂/Si substrates via chemical solution deposition. It was found that the inserted bottom BaTiO₃ layer between Pt and (Na_0.5Bi_0.5)_0.94Ba_0.06TiO₃ is very effective for promoting the crystallinity and (110)-oriented growth of NBT-BT films. Meanwhile, the BaTiO₃ layers also provide better interfaces between the ferroelectric thin film and the electrodes in terms of reducing leakage current. The trilayered films showed enhanced dielectric and ferroelectric properties compared with the pure NBT-BT films. Well saturated hysteresis loops were obtained due to good electrical insulating properties in the high electric field region.     

Perovskites Bi0.8La0.2FeO3 and Bi0.8La0.2Fe0.95Cr0.05O3: Crystal structure and magnetic and charge states of iron ions

Perovskites of the Bi_0.8La_0.2Fe_{1 ? x} Cr _x O₃ system (x = 0, 0.05) were investigated by Mössbauer spectroscopy in the temperature range of 298–800 K. The samples were fabricated by solid-state synthesis and had a rhombic structure. Iron ions in Bi_0.8La_0.2FeO₃ and Bi_0.8La_0.2Fe_0.95Cr_0.05O₃ are situated in trivalent states. The magnetic transition temperatures (the Néel temperatures T _N ) T _N = 677.5 ± 2.5 K for Bi_0.8La_0.2FeO₃ and T _N = 647.6 ± 2.5 K for Bi_0.8La_0.2Fe_0.95Cr_0.05O₃ are measured. The substitution of trivalent iron ions from trivalent chromium ions in the amount x = 0.05 in Bi_0.8La_0.2Fe_0.95Cr_0.05O₃ perovskite decreases the hyperfine magnetic field at nuclei ⁵⁷Fe in Fe⁺³-O-Cr⁺³ chains by 30 kOe.     

Critical concentrations in Ba-doped incipient ferroelectric SrTiO3

Temperature-induced variations of light refraction and dielectric permittivity in single-crystal Sr_1−x Ba_xTiO₃ (x=0.02, 0.05, 0.07, and 0.14), Sr_1−x Ca_xTiO₃ (x=0.014), and in nominally pure strontium titanate have been studied within the 17–300 K temperature range. The spontaneous polar contribution to the refractive index has been isolated. It was used to calculate the temperature and concentration dependences of the polarization autocorrelation function 〈P _s ^2〉 in the Sr_1−x Ba_xTiO₃ system. For x⩽0.07, the polarization P _s=〈P _s ² 〉^1/2 varies proportional to (x−x _g)^1/2, where x _g=0.0027 is the new critical concentration in Sr_1−x Ba_xTiO₃, below which short-range polar order vanishes. Fiz. Tverd. Tela (St. Petersburg) 39, 704–710 (April 1997)