Possible Topological Hall Effect in a Spin Gapless Semiconducting Mn2CoAl Heusler Compound

Topological Hall effect (THE), induced by the interaction of charge carriers with mesoscopic or microscopic noncoplanar spin structures, holds promising applications in the field of spintronics. In the present study, a giant THE of about 2 μΩ cm at room temperature is reported in a bulk spin gapless semiconducting Mn₂CoAl cubic Heusler compound. Temperature-dependent investigation of magneto-transport data reveals that the Mn₂CoAl has the large THE over a wide temperature range of 2–300 K. The alternating current (AC) susceptibility as a function of magnetic field exhibits a smooth and continuous response rather than any kink or anomaly, suggests that the observed THE in the Mn₂CoAl compound results from the interaction of charge carriers with the microscopic noncoplanar spin texture. The observed THE as a function of temperature follows the same behavior as the magnetocrystalline anisotropy (MCA) of the cubic Mn₂CoAl, indicating the competition of the MCA with ferromagnetic and antiferromagnetic exchange interactions as the origin of the noncoplanar spin texture and hence THE. Micromagnetic simulations further support the emergence of noncoplanar spin structure as a result of the competition between different energies.     

Lattice dynamics of ZnGeP2 and AgGaS2 in a tensor-charge model

A tensor-charge model is developed for the lattice dynamics of the ternary compounds A²B⁴C ₂ ⁵ and A¹B³C ₂ ⁶ . The long-wavelength phonon frequencies are calculated for ZnGeP₂ and AgGaS₂ crystals. The tensor-charge parameters are determined by comparing the theoretical and experimental values of the infrared intensities of active frequencies. In the crystal ZnGeP₂, the tensor charges of the zinc and phosphorus are found to be close to the isotropic charges of the point-ion model, while the tensor charge of germanium is very different from the point-ion charge. In the AgGaS₂ crystal, the tensor charges of all the atoms differ appreciably from the point-ion charges. The results are discussed from the point of view of the chemical bond.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 40–44, September, 1980.     

Femtosecond parametric generation in ZnGeP(2)

We report traveling-wave optical parametric generation in short (2-mm) ZnGeP(2) samples with reduced anomalous absorption, using femtosecond pump pulses near 2 mum . The signal and the idler waves generated could be tuned from 2.5 to 10 mum , and they extend the tunability of the beta-barium borate optical parametric generator used as a pump source to the mid-infrared. At a single-pass internal conversion efficiency of 2.5% we estimate pulse durations of 75 fs (signal near 3 mum) and 200 fs (idler near 6 mum).     

Multifrequency ESR Characterization of Paramagnetic Point Defects in Semiconducting Cubic BN Crystals

Low-frequency (X-band) electron spin resonance (ESR) investigations on commercially available large-grained cubic boron nitride (cBN) superabrasive powders of various coloration, combined with high-frequency (W-band) ESR measurements on oriented submillimeter-size single crystallites selected from the same powder samples, resulted in a clear identification of several types of paramagnetic point defects. The resulting spin Hamiltonian parameters describing the ESR spectra observed in the 3–293 K temperature range and the photosensitivity of the paramagnetic defects observed in amber-colored cBN samples are reported. It is shown that the nature of the paramagnetic centers depends on the color of the investigated samples and that, in many cases, uncontrolled impurities seem to be involved in their structure.     

ZnGeP2 parametric oscillator pumped by a linewidth-narrowed parametric 2 microm source

A tandem optical parametric oscillator (OPO) is used to convert radiation from 1.064 microm to the mid-infrared. Spectral bandwidth narrowing close to 80 times compared with a conventional cavity was achieved by using a bulk Bragg grating as an outcoupler in a near-degenerate periodically poled KTiOPO(4) OPO. The narrowed 2,008 nm radiation was subsequently used for pumping the ZnGeP(2) OPO, which was tunable between 3.3 and 5.2 microm. Pulse energies of 170 microJ and pump depletion close to 70% were obtained in the ZnGeP(2) OPO. To our knowledge this is the first time the output from a near-degenerate type I PPKTP OPO has been used for ZnGeP(2) OPO pumping.     

Electronic Structure And Magnetism of Novel Diluted Magnetic Semiconductors CdGeP 2 : Mn and ZnGeP 2 : Mn

Chalcopyrite II-IV-V 2 semiconductors CdGeP 2 : Mn and ZnGeP 2 : Mn are new types of diluted magnetic semiconductors (DMSs). Since their ferromagnetic Curie temperatures are much higher than room temperature, these DMSs are good candidates for materials to be used in spintronics devices. Their electronic and magnetic structures have been investigated using the first-principles calculations based on the Korringa-Kohn-Rostoker coherent-potential-approximation and local-density-approximation (KKR-CPA-LDA) methods. When Cd or Zn atoms are substituted by Mn atoms, the ground state magnetic structure is spinglass-like. On the other hand, if Mn atoms substitute Ge atoms, the system becomes ferromagnetic through the double-exchange mechanism. However, the calculation of the formation energies shows that this system is not energetically favorable. Instead, the system with vacancies (Cd, Vc, Mn)GeP 2 or a non-stoichiometric (Cd, Ge, Mn)GeP 2 are also ferromagnetic and, moreover, energetically stable. We conclude that either of these variants possess a ferromagnetic phase of the kind CdGeP 2 : Mn. Similar conclusions are obtained for ZnGeP 2 : Mn.     

Broadband terahertz pulse emission from ZnGeP2

Optical rectification is demonstrated in (110)-cut ZnGeP(2) (ZGP) providing broadband terahertz (THz) generation. The source is compared to both GaP and GaAs over a wavelength range of 1150 nm to 1600 nm and peak-intensity range of 0.5 GW/cm(2) to 40 GW/cm(2). ZGP peak-to-peak field amplitude is larger than in the other materials due to either lower nonlinear absorption or larger second-order nonlinearity. This material is well suited for broadband THz generation across a wide range of infrared excitation wavelengths.     

1.2 W中红外ZnGeP2光参量振荡器

报导了利用Tm,HoGdVO4激光器抽运双谐振ZnGeP2光参量振荡器实验研究.Tm(5%),Ho(0.5%)GdVO4晶体采用液氮制冷方式,工作在77 K温度条件下.以25 W波长为800 nm的光纤耦合激光二极管抽运,2 μm激光最大平均功率7 W,脉冲宽度小于30 ns, 脉冲重复频率5 kHz到20 kHz可调.非线性频率转换晶体ZnGeP2长15 mm,55?切割,OPO谐振腔为平平腔,腔长约25 mm.在5W的2 μm激光抽运下,脉冲重复频率10 kHz,实现了信号光3.7 μm及闲频光4.5 μm中红外激光输出,参量光脉冲宽度为15～17 ns,最大平均功率大于1.2 W,光-光转换效率为20%.测量参量光输出光束全宽度远场发散角4 mrad,光束质量M2因子小于3.     

Electronic Structure and Optical Properties of Semiconducting Orthorhombic BaSi2

Full potential linearized augmented plane wave （FPLAPW） method calculations are carried out for semiconducting orthorhombic BaSi2. The optical properties and the origin of the different optical transitions are investigated. Our calculated band gap of 1.0918eV is indirect, which is in good agreement with the experimental result. The bonds between Ba and Si are considered to be electrovalent bond. The anlsotropy in the imaginary part ε2（w） and real part εl（w） of the optical dielectric tensor are analysed. The contributions of various transition peaks are explained from the imagnary part of the dielectric function.     

Preparation and properties of epitaxial ZnGeP2 films

Thermodynamic analysis has been applied to the vapor over a ZnGeP₂ crystal when the chlorine source is provided by ZnCl₂. ZnGeP₂ film growth has been examined and the electrophysical and photoluminescence parameters have been measured. All these autoepitaxial films have the chalcopyrite structure, while those parameters are determined by the defects and the substrate orientation.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 74–78, April, 1988.We are indebted to L. G. Lavrent'eva for interest, to A. I. Gribenyukov and T. E. Tkachenko for assistance in growing the single crystal; and to F. Kim for the microprobe analysis.     

Electrical and optical properties of electron-irradiated ZnGeP2

Conclusions and summary The following conclusions are drawn from the reported study:The electrophysical properties of ZnGeP₂ crystals and their optical transparency in the range hG are attributable to the presence of a density-dominant (10¹⁷–10¹⁹ cm^–3) deep [E_v+(0.5–0.6) eV] growth defect associated predominantly with Zn vacancy clusters.Irradiation by high-energy electrons induces a shift of the Fermi level in the direction of E_G/2 and increases the resistivity of ZnGeP₂ to values of approximately 10¹² ·cm at 300 K. Irradiation with high-energy electrons is an effective technique for the optical bleaching of p-ZnGeP₂. The reversible modification of the optical absorption spectra of p-ZnGeP₂ in connection with irradiation and subsequent annealing indicates that the absorption step in the vicinity of h 0.6 eV is not attributable to light absorption by germanium inclusions, but to optical transition from the valence band to the growth-defect level E_v+(0.5–0.6) eV.Enhancement of the optical transmissivity of p-ZnGeP₂ in the range hG can be achieved in two wayss 1) as the result of a decrease in the density of centers with the level E_v+0.6 eV by variation of the growth conditions or subsequent annealing; 2) by shifting the Fermi level above the energy position E_v+0.6 eV through the irradiation-induced injection of compensating donor centers.The injection of radiation defects is an effective technique for controlling the electrical and optical parameters of the compound ZnGeP₂.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 122–130, August, 1986.     

High-average-power mid-infrared ZnGeP2 optical parametric oscillator with a wavelength-dependent polarization rotator

A wavelength-dependent polarization rotator is used to transform the orthogonal polarizations of the signal and idler of a near-degenerate type II KTP optical parametric oscillator (OPO) into a common polarization state. This common polarization allows a single ZnGeP2 OPO to fully utilize the 2 microm signal and idler KTP OPO outputs in a mid-IR conversion. The simple design of the wavelength-dependent polarization rotator yields a compact source that simultaneously generates four mid-JR wavelengths collinearly with a total mid-IR average power of 5.5 W at a >15 kHz pulse repetition rate.     

Mid-infrared ZnGeP2 parametric oscillator directly pumped by a pulsed 2 microm Tm-doped fiber laser

We have demonstrated what we believe to be the first mid-infrared optical parametric oscillator (OPO) pumped directly by a pulsed Tm-doped fiber laser. The Tm-fiber pump laser produces 30 ns pulses with a repetition rate of 30 kHz at a wavelength of 2 microm. The ZnGeP2 (ZGP) OPO produces 20 ns mid-IR pulses in the 3.4-3.9 microm and 4.1-4.7 microm spectral regions simultaneously. More than 658 mW of mid-IR output power has been generated with a total OPO slope efficiency greater than 35%.     

ZnGeP2: A near-infrared-activated photocatalyst for hydrogen production

In this work,we prepared ZnGeP2(ZGP)photocatalyst using single flat temperature zone(SFT)method in a vacuum quartz ampoule.The XRD,SEM,EDS,DRS and XPS were used to characterize the crystal structure,morphology,elemental content,optical absorption and band gap structure of ZGP.The results of photocatalytic hydrogen evolution and apparent quantum efficiency show that ZGP is a promising photocatalyst for hydrogen production both under visible and near-infrared light irradiation.In addition,it is also found that adding the common stabilizer H3PO2 and ultrasonic treatment can efficiently improve the photocatalytic activity and stability of ZGP.     

Broadband frequency conversion of laser radiation in ZnGeP2 crystal

The phase matching conditions in the ZnGeP₂ crystal are calculated and analyzed from the viewpoint of broadband frequency conversion of mid-IR radiation. The frequency conversion of Cr:ZnS laser radiation in the ZnGeP₂ crystal is calculated. The results show the possibility of developing a broadband laser source whose spectrum spans a wavelength range of 3.2–9.5 µm.     

Broadly tunable noncritically phase-matched ZnGeP2 optical parametric oscillator with a 2-microJ pump threshold

We report a high-repetition-rate (1-10-kHz) optical parametric oscillator (OPO) based on noncritically phase-matched ZnGeP2 (ZGP). The pump source was an OPO based on periodically pole lithium niobate that was pumped in turn by a Q-switched diode-pumped 1-microm Nd:YAG laser. The ZGP OPO yielded continuously tunable output from 3.7 to 10.2 microm by tuning of the pump wavelength from 2.3 to 3.7 microm. At the optimal pump focusing, the minimum ZGP OPO threshold achieved was 2 microJ, which is to our knowledge the lowest ever reported for a singly resonant OPO. The output energy in the 6-8-microm range was > 20 microJ, and the quantum efficiency of converting 1-microm radiation to the mid IR exceeded 10%.     

Crystal lattice dynamics of ZnGeP2 and AgGaS2 in hard ion model

A calculation is made of the long-wavelength phonon spectrum of ZnGeP₂ and AgGaS₂ in the hard ion model. The parameters of short-range forces and dynamic charges are found by comparing the theory with the experimental data on infrared absorption and Raman scattering of light. The elastic and piezoelectric constants are calculated. The available experimental data are discussed.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 3–10, May, 1980.     

A ring ZnGeP2 optical parametric oscillator pumped by a Ho:LuAG laser

We have demonstrated that we believe to be the first ring ZnGeP₂ (ZGP) optical parametric oscillator (OPO) pumped by a pulsed Ho:LuAG laser. The maximum output power of the ring ZGP OPO laser was 5.51 W at 13.1 W incident Ho pump power, corresponding to a slope efficiency of 59.0 %. The ZGP OPO laser produced 14 ns mid-infrared pulses in the 3.72–4.01 and 4.37–4.75 μm spectral regions simultaneously. In addition, the continuous wave Ho:LuAG laser generated 26.5 W of linearly output at 2,094.4 nm at the absorbed Tm pump power of 49.9 W.