Theoretical analysis of the impurity distribution in single-crystal silicon

Results are presented for the total energies calculated for oxygen and carbon impurities in silicon at T=0 K. The equilibrium positions of these point defects are determined at low (10⁻³–10⁻² at. %) concentrations. Fiz. Tverd. Tela (St. Petersburg) 39, 1384–1385 (August 1996)     

Theoretical analysis of impurity distributions in crystalline silicon

Calculations of the total energy of oxygen and carbon impurities in silicon at T=0 K are presented. The equilibrium position of point defects is determined for low (10⁻³–10⁻² at. %) concentrations. Fiz. Tverd. Tela (St. Petersburg) 39, 2001–2002 (November 1997)     

Build-up of F and M color centers in KCl single crystals under combined electron and proton irradiation

The F and M color-center build-up kinetics in KCl crystals under combined irradiation with electrons of energy 15 and 100 keV and 100-keV protons have been studied in the flux range of 10¹³–10¹⁵ cm⁻² and at a flux density of 3×10¹¹ cm⁻² s⁻¹. It is shown that consecutive irradiation with electrons and protons produces results not obtainable under electron or proton irradiation alone. Fiz. Tverd. Tela (St. Petersburg) 40, 2015–2018 (November 1998)     

New fluorimetric reagents, sodium pyrophosphate, sodium trimetaphosphate, and sodium tetrametaphosphate, for the determination of cerium(III)

Three sensitive and selective new alternatives for fluorometric determination of cerium(III) are described in this study. Ce(III) is highly fluorescent in sodium pyrophosphate, sodium trimetaphosphate, and sodium tetrametaphosphate solutions. For these reagents, the maximum excitation/emission wavelengths are 300/350, 297/340, and 299/352 nm, respectively. Maximum fluorescence intensities are obtained by irradiating Ce(III) dissolved in 0.033 g L⁻¹ sodium pyrophosphate, 41.4 g L⁻¹ sodium trimetaphosphate, and 0.96 g L⁻¹ sodium tetrametaphosphate at room temperature. The fluorescence intensities are linear over the range 0.001–30, 0.001–75, and 0.001–70 μg ml⁻¹. The detection limits are calculated as 9.5 × 10⁻³, 1.1/10⁻³, and 3.8 × 10^-3 μg ml⁻¹ Ce(III), respectively. The relative standard deviations for 15/0.05 Μg ml⁻¹ Ce(III) are 1.1/1.2, 1/1.1, and 1.2/1.3%, respectively. Quenching effects of other lanthanides and some inorganic anions were investigated. The methods have been applied to rare earth mixtures with a good accuracy.     

Spatial distribution, build-up, and annealing of radiation defects in silicon implanted by high-energy krypton and xenon ions

An x-ray diffraction study of defect formation in silicon irradiated by Kr⁺ (210 MeV, 8×10¹²−3×10¹⁴ cm⁻²) and Xe⁺ (5.6 BeV, 5×10¹¹−5×10¹³ cm⁻²) ions is reported. It has been established that irradiation produces a defect structure in the bulk of silicon, which consists of ion tracks whose density of material is lower than that of the host. The specific features of defect formation are discussed taking into account the channeling of part of the ions along the previously formed tracks and the dominant role of electron losses suffered by the high-energy ions. It is shown that the efficiency of incorporation of stable defects by irradiation with high-energy ions is lower than that reached by implanting medium-mass ions with energies of a few hundred keV. Fiz. Tverd. Tela (St. Petersburg) 40, 1627–1630 (September 1998)     

X-ray diffraction studies of silicon implanted with high-energy erbium ions

Silicon crystals after implantation of erbium ions with energies in the range 0.8–2.0 MeV and doses in the range 1×10¹²–1×10¹⁴ cm⁻² have been studied by two-and three-crystal x-ray diffraction. Three types of two-crystal reflection curves are observed. They correspond to different structural states of the implanted layers. At moderate doses (1×10¹²–1×10¹³ cm⁻²) a positive strain is observed, due to the formation of secondary radiation defects of interstitial type. An increase of the implantation dose is accompanied by the formation of an amorphous layer separating the bulk layer and a thin monocrystalline surface layer. At an implantation dose of 1×10¹⁴ cm⁻² the monocrystalline surface layer is completely amorphized. Parameters of the implantation layers are determined. A model of the transformation of structural damage is discussed. Fiz. Tverd. Tela (St. Petersburg) 39, 853–857 (May 1997)     

Synthesis, characterization, DNA binding and cleavage studies of mixed-ligand Cu(II) complexes of 2,6-bis(benzimidazol-2-yl)pyridine

Four novel copper(II) complexes of the composition [CuLX] where L = 2,6-bis(benzimidazole-2yl)pyridine, X = dipyridophenazine (L₁), 1,10-phenanthroline (L₂), hydroxyproline (L₃) and 2,6-pyridine dicarboxylic acid (L₄) were synthesized and characterized by using elemental analysis, FT-IR, UV–vis, ESI-MS, molar conductance and magnetic susceptibility measurements. The complexes [CuLL₁](NO₃)₂ [1], [CuLL₂](NO₃)₂ [2], [CuLL₃](NO₃) [3] and [CuLL₄] (NO₃) [4] are stable at room temperature. In DMSO the complexes [1] and [2] are 1:2 electrolytes, [3] and [4] are 1:1 electrolytes. Based on elemental and spectral studies five coordinated geometry is assigned to all the four complexes. The interaction of four copper ion complexes with calf thymus DNA were carried out by UV–vis titrations, fluorescence spectroscopy, thermal melting and viscosity measurements .The binding constant (K_b) of the above four metal complexes were determined as 5.43 × 10⁴ M_,⁻¹ 2.56 × 10⁴ M⁻¹, 1.21 × 10⁴ M⁻¹ and 1.57 × 10⁴ M⁻¹ respectively. Quenching studies of the four complexes indicates that these complexes strongly bind to DNA, out of all complex 1 is binding more strongly. Viscosity measurements indicate the binding mode of complexes with CT DNA by intercalation through groove. Thermal melting studies also support intercalative binding. The nuclease activity of the above metal complexes shows that 1, 2 and 3 complexes cleave DNA through redox chemistry.     

Fast magnetic relaxation, studied by microwave absorption in neutron-irradiated YBa2Cu3O7−x ceramic

A contactless microwave method is used to measure the fast magnetic relaxation of granular ceramic samples of YBa₂Cu₃O_7−x irradiated by neutrons with fluences of 10¹⁶–10¹⁹ cm⁻². An experimental study of the time dependence of the relaxation of high-frequency (rf) absorption (f=100 MHz) after the action of an external magnetic field pulse has shown the magnetic relaxation times τ ₀ to be in the time interval of 0.5–150 ms. The rf-absorption mechanism is discussed in terms of an intergranular system with a thermally activated flux of vortices and their diffusion in the granular medium. Fiz. Tverd. Tela (St. Petersburg) 39, 977–981 (June 1997)     

Nonlinear response of photorefractive lithium tantalate and niobate at acoustic frequencies

An amplification of the intensity of pump oscillations is observed experimentally at frequencies from 100 Hz to 1 kHz during photoinduced light scattering and holographic-type parametric scattering in photorefractive lithium tantalate and niobate. Possible ways are analyzed for explaining the existence of a photorefractive response in these crystals over times of 10⁻²–10⁻³ s, which are five orders of magnitude shorter than the Maxwell time. Zh. éksp. Teor. Fiz. 112, 1490–1498 (October 1997)     

Self-organization in film nucleation in the high-T c superconductor Y-Ba-Cu-O system

The process of new-phase nucleation in the YBa₂Cu₃O_7−x system deposited by magnetron sputtering has been studied. The first experimental observation of the phenomenon of temporal self-organization in the course of new-phase formation, which was predicted theoretically,^1–3 is reported. Auto-oscillations in the number of nuclei of various chemical compounds 20–60 nm in size were observed to occur within the 15 to 300-s time interval, the total number of nuclei varying aperiodically from 10¹³ m⁻² to less than 10¹¹ m⁻². Fiz. Tverd. Tela (St. Petersburg) 39, 216–218 (February 1997)     

Changes in the optical properties of conducting polydiacetylene THD brought on by doping

Changes in the optical properties of conducting polydiacetylene THD (poly-1,1,6,6-tetraphenylhexadiindiamine) brought on by doping are investigated for the first time. Spectral dependences of the extinction coefficients were studied in the range 400–25 000 cm⁻¹ both for the undoped polymer (σ<10⁻⁹ S/cm) and at various doping levels (up to σ∼5×10⁻³ S/cm). The results obtained attest to the appearance of high carrier concentrations in polydiacetylene THD with conductivities σ⩾10⁻⁴ S/cm. The relatively low observed macroscopic conductivity is explained by the complex hierarchy of structural formations that are intrinsic to polymers. The results obtained are compared with the corresponding data for conducting polyacetylene. Fiz. Tverd. Tela (St. Petersburg) 40, 1162–1166 (June 1998)     

Nature of conduction via impurities in uncompensated silicon

The static conductivity σ(E) and photoconductivity (PC) at radiation frequencies ħω=10 and 15 meV in Si doped with shallow impurities (density N=10¹⁶−6×10¹⁶ cm⁻³, ionization energy ε₁≃45 meV) with compensation K=10⁻⁴−10⁻⁵ in electric fields E=10–250 V/cm are measured at liquid-helium temperatures T. Special measures are taken to prevent the high-frequency part of the background radiation (ħω>16 meV) from striking the sample. It is found that the conductivity σ(E) is due to carrier motion along the D ⁻ band, which is filled with carriers under the influence of the field E. In fields E<E _q (E _q ≃100–200 V/cm) the carrier motion consists of hops along localized D ⁻ states in a 10–15 meV energy band below the bottom of the free band (energy ε=ε₁); for E>E _q carriers drift along localized D ⁻ states with energy ε∞ε₁−10 meV. An explanation is proposed for the threshold behavior of the field dependence of the photo-and static conductivities. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 4, 232–236 (25 August 1997)     

Excitation of nuclei in a hot, dense plasma: Feasibility of experiments with 201Hg

It is shown that in a plasma produced on the surface of a sample consisting of a natural mixture of mercury isotopes, ∼10⁴−10^{5 201}Hg nuclei can be excited into the low-lying isomeric level 1/2⁻ (1.561 keV) by an ultrashort laser pulse with energy ≈1 J, duration ≈200 fs, and intensity ≈10¹⁶ W/cm² and the lifetime of the level can be determined. Possible mechanisms leading to the excitation of ²⁰¹Hg nuclei by photons and electrons in a dense, hot plasma are examined and the cross sections of the processes are estimated. Schemes for detecting the effect are proposed. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 5, 312–316 (10 September 1997)     

Radiative emission of hot metallic clusters

Analysis of experimental data on the relaxation of freely moving hot niobium and tungsten clusters shows that they are cooled as a result of radiative emission. The absorption cross sections per atom of niobium and tungsten clusters in the temperature range 3100–3700 K are (4 −7)×10⁻¹⁸ cm², and the absorption process loses its resonant character at these temperatures. Pis’ma Zh. éksp. Teor. Fiz. 69, No. 6, 453–458 (25 March 1999)     

Local surface segregations of implanted aluminum in an iron crystal with a low density of defects

The surface distribution of elements is studied by scanning a 3-MeV proton beam along the surface of a bcc-Fe sample implanted with aluminum ions in the dose interval (1–50) · 10¹⁶ cm⁻². Ring-shaped regions, up to 30 μm in diameter, with a high density of aluminum, which appear at implantation doses (5–20) · 10¹⁶ cm⁻², are observed. These regions appear as a result of radiation-stimulated segregation processes. A mechanism based on the existence of a low density of dislocations in the initial crystal is proposed to explain the implanted impurity segregation processes. Pis’ma Zh. éksp. Teor. Fiz. 65, No. 1, 86–89 (10 January 1997)     

Influence of temperature and strain on the amplitude-dependent internal friction of high-purity aluminum

The dislocation amplitude-dependent friction (ADIF) of high-purity (99.999%) polycrystalline aluminum is investigated in the temperature range 7–300K at vibrational strain amplitudes of 10⁻⁷–10⁻⁴ for samples in the annealed and deformed (by quasistatic, shock, and ultrasonic loading) states. The ADIF is a multistage effect in the indicated temperature and vibration amplitude ranges. Analysis of the amplitude-temperature spectra of the ADIF permits separation of components attributable to: interaction between dislocations, the interaction of dislocations with pinning points, and pure dislocation relaxation (the interaction of dislocations with the Peierls relief). ADIF is observed to depend nonmonotonically on the initial quasistatic strain determined by strain hardening and recovery processes. Fiz. Tverd. Tela (St. Petersburg) 40, 1839–1844 (October 1998)     

Synthesis, anticancer, and anti-inflammatory activity evaluation of methanesulfonamide and amidine derivatives of 3,4-diaryl-2-imino-4-thiazolines

Condensation of 3,4-diaryl-2-imino-4-thiazoli-nes 1a–j with methanesulfonyl chloride gave methanesulfonamide derivatives 2a–j. Condensation of 2-cyanopyrazine, 4-cyanopyridine, and 2-cyanopyridine with 3,4-diaryl-2- imino-4-thiazolines 1h–m in the presence of sodium methoxide afforded amidine derivatives 3a–j. Compounds 2a–j and 3a–j were screened against various human cancer cell lines (COLO-205, HEP-2, A-549, IMR-32) and their percentage growth inhibition profile determined at 1 × 10⁻⁵M. The anti-inflammatory activity of these compounds was assessed using the carrageenan-induced paw edema model. Compound 2i exhibited 34.7% anti-inflammatory activity at 50 mg/kg p.o., which is comparable to standard care drug phenyl butazone (37% activity at 50 mg/kg p.o.)     

Relaxation and shift of the precession frequency of the spin of a negative muon in n-type silicon

The residual polarization of negative muons in n-type silicon with impurity density (1.6±0.2) · 10¹³ cm⁻³ is investigated as a function of temperature in the range 10–300 K. The measurements are performed in an external magnetic field of 0.08 T oriented transversely to the spin of the muons. Relaxation of the muon spin and a shift of the precession frequency are observed at temperatures below 30 K. The relaxation rate at 30 K equals 0.25±0.08 μs⁻¹. The shift of the precession frequency at 20 K equals 7 · 10⁻³. Both the relaxation rate and the shift of the precession frequency increase as the temperature decreases. At temperatures below 30 K the relaxation rate is described well by the relation Λ=bT ^−q , where q=2.8±0.2. Pis’ma Zh. éksp. Teor. Fiz. 63, No. 7, 539–543 (10 April 1996)     

Kinetics of the initial stage in a first-order phase transformation in thin films

The nucleation and growth of islands of a new phase on the surface of solids has been studied both experimentally and theoretically for the particular case of the transition from the pyrochlore to perovskite phase in a thin film of a lead zirconate-titanate ferroelectric. This transformation was chosen because the new-phase islands have a stable circular shape in this case, a relatively large size (10⁻⁵–10⁻⁴ m) permitting their observation with an optical microscope, and a low growth rate (10⁻⁸–10⁻⁹ m/s). A theoretical analysis of the process, based on the kinetic theory of first-order phase transitions proposed earlier, has been carried out and the behavior in time of all main characteristics of a phase transformation, namely, nucleation rate, concentration of the new-phase islands, their size distribution, and relative overheating, has been calculated. The same characteristics have been measured experimentally, thus permitting one for the first time to make a thorough comparison of the theoretical with experimental data on the kinetics of first-order phase transitions. They have been found to be in a good agreement. Fiz. Tverd. Tela (St. Petersburg) 39, 121–126 (January 1997)     

Long-lived excited state of Te donors in GaP

The kinetics of the photoresponses in constant and microwave electric fields and the variation of the absorption of background radiation in GaP doped with Te (2×10¹⁷ cm⁻³) upon impurity excitation at 5–50 K are investigated. The lifetime of the excited state of the Te donors is determined (∼10⁻² s). It is shown that the results presented are consistent with the model of carrier accumulation in long-lived impurity excited states in semiconductors. These results are compared with the results previously obtained for diamond-structure semiconductors. Zh. éksp. Teor. Fiz. 114, 2204–2210 (December 1998)