Theoretical investigation on the electronic and geometric structure of GaN2+ and GaN4+

The electronic and geometric structures of gallium dinitride cation, GaN2+ and gallium tetranitride cation, GaN4+ were systematically studied by employing density functional theory (DFT-B3LYP) and perturbation theory (MP2, MP4) in conjunction with large basis sets, (aug-)cc-pVxZ, x = T, Q. A total of 7 structures for GaN2+ and 24 for GaN4+ were identified, corresponding to minima, transition states, and saddle points. We report geometries and dissociation energies for all the above structures as well as potential energy profiles, potential energy surfaces, and bonding mechanisms for some low-lying electronic states. The calculated dissociation energy (De) of the ground state of GaN2+, X1Sigma+, is 5.6 kcal/mol with respect to Ga+(1S) + N2(X1Sigmag+) and that of the excited state, ?3Pi, is 24.8 kcal/mol with respect to Ga+(3P) + N2(X1Sigmag+). The ground state and the first excited minimum of GaN4+ are of 1A1(C2v) and 3B1(C2v) symmetry with corresponding De of 11.0 and 43.7 kcal/mol with respect to Ga+(1S) + 2N2(X1Sigmag+) for X1A1 and Ga+(3P) + 2N2(X1Sigmag+) for 3B1.     

A multireference coupled-cluster potential energy surface of diazomethane, CH(2)N(2)

The intrinsically multireference dissociation of the C-N bond in ground-state diazomethane (CH(2)N(2)) at different angles has been studied with the multireference Brillouin-Wigner coupled-cluster singles and doubles (MRBWCCSD) method. The morphology of the calculated potential energy surface (PES) in C(s)() symmetry is similar to a multireference perturbational (CASPT3) PES. The MRBWCCSD/cc-pVTZ H(2)C-N(2) dissociation energy with respect to the asymptotic CH(2)(?(1)A(1)) + N(2)(X(1)Sigma(g)(+)) products is D(e) = 35.9 kcal/mol, or a zero-point corrected D(0) = 21.4 kcal/mol with respect to the ground-state CH(2)(X(3)B(1)) + N(2)(X(1)Sigma(g)(+)) fragments.     

First principles investigation of the electronic structure of the iron carbide cation, FeC+

We have studied 40 states of the diatomic iron carbide cation FeC(+) by multireference methods coupled with relatively large basis sets. For most of the states, we have constructed complete potential energy curves, reporting dissociation energies, usual spectroscopic parameters, and bonding mechanisms for the lowest of the studied states. The ground state is of (2)Delta symmetry, with the first excited state (a(4)Sigma(-)) lying 18 kcal/mol higher. The X(2)Delta state displays a triple-bond character, with an estimated D(0) value of 104 kcal/mol with respect to the adiabatic products or 87 kcal/mol with respect to the ground-state fragments.     

Ab initio study of the electronic structure and bonding of aluminum nitride

For the diatomic aluminum nitride (AlN), we have constructed potential energy curves for 45 states employing multi-reference variational methods and quantitative basis sets. Thirty-six states are relatively strongly bound, five present local minima, and four are of repulsive nature. Almost all states are of intense multi-reference character rendering their calculation and interpretation quite problematic. Our tentative assignment of the ground state is 3Pi, while a 3Sigma- state is above by less than 1 kcal/mol. Our best estimate for the binding energy of the X3Pi state is D0 = 56.0 +/- 0.5 kcal/mol at re = 1.783 A, in good agreement with the experimental values of D = 66 +/- 9 kcal/mol and re = 1.7864 A. The binding energy of the A3Sigma- state is very similar to the X state because they both correlate to the ground-state atoms, but the bond distance of the former is 0.13 A longer. The first seven states can be tagged as follows: X3Pi, A3Sigma-, a1Sigma+, b1Pi, c1Delta, B3Sigma+, and d1Sigma+, a rather definitive order with the exception of X and A states.     

The electron affinity of gallium nitride (GaN) and digallium nitride (GaNGa): the importance of the basis set superposition error in strongly bound systems

The electron affinity of GaN and Ga2N as well as the geometries and the dissociation energies of the ground states of gallium nitrides GaN, GaN(-), Ga2N, and Ga2N(-) were systematically studied by employing the coupled cluster method, RCCSD(T), in conjunction with a series of basis sets, (aug-)cc-pVxZ(-PP), x=D, T, Q, and 5 and cc-pwCVxZ(-PP), x=D, T, and Q. The calculated dissociation energy and the electron affinity of GaN are 2.12 and 1.84 eV, respectively, and those of Ga2N are 6.31 and 2.53 eV. The last value is in excellent agreement with a recent experimental value for the electron affinity of Ga2N of 2.506+/-0.008 eV. For such quality in the results to be achieved, the Ga 3d electrons had to be included in the correlation space. Moreover, when a basis set is used, which has not been developed for the number of the electrons which are correlated in a calculation, the quantities calculated need to be corrected for the basis set superposition error.     

Electronic structure of cobalt carbide, CoC

The ground and 18 low lying excited states of the diatomic molecule cobalt carbide, CoC, have been examined by multireference variational methods (MRCI) combined with quantitative basis sets. All calculated states are bound and correlate adiabatically to the ground-state atoms, Co(a4F) + C(3P). We report complete potential energy curves, equilibrium bond distances, dissociation energies (De), spectroscopic constants, electric dipole moments and spin-orbit splittings. The bonding character of certain states is also discussed with the help of Mulliken distributions and valence-bond-Lewis diagrams. We are practically certain that the ground state is of 2Sigma+ symmetry with a state of 2Delta symmetry lying less than 3 kcal/mol higher, in agreement with the relevant experimental findings. Our best estimate of the X 2Sigma+ dissociation energy is De(D0) = 83(82) kcal/mol at r(e) = 1.541 A, 0.02 A shorter than the experimental bond length.     

The singlet electronic ground state isomers of dialuminum monoxide: AlOAl, AlAlO, and the transition state connecting them

The singlet electronic ground state isomers, X (1)Sigma(g) (+) (AlOAl D(infinityh)) and X (1)Sigma(+) (AlAlO C(infinitynu)), of dialuminum monoxide have been systematically investigated using ab initio electronic structure theory. The equilibrium structures and physical properties for the two molecules have been predicted employing self-consistent field (SCF) configuration interaction with single and double excitations (CISD), multireference CISD (MRCISD), coupled cluster with single and double excitations (CCSD), CCSD with perturbative triples [CCSD(T)], CCSD with iterative partial triple excitations (CCSDT-3 and CC3), and full triples (CCSDT) coupled cluster methods. Four correlation consistent polarized valence (cc-pVXZ) type basis sets were used. The AlAlO system is rather challenging theoretically. The two isomers are confirmed to have linear structures at all levels of theory. The symmetric isomer AlOAl is predicted to lie 81.9 kcal mol(-1) below the asymmetric isomer AlAlO at the cc-pV(Q+d)Z CCSD(T) level of theory. The predicted harmonic vibrational frequencies for the X (1)Sigma(g) (+) AlOAl molecule, omega(1)=517 cm(-1), omega(2)=95 cm(-1), and omega(3)=1014 cm(-1), are in good agreement with experimental values. The harmonic vibrational frequencies for the X (1)Sigma(+) AlAlO structure, omega(1)=1042 cm(-1), omega(2)=73 cm(-1), and omega(3)=253 cm(-1), presently have no experimental values with which to be compared. With the same methods the barrier heights for the isomerization AlOAl-->AlAlO and AlAlO-->AlOAl reactions were predicted to be 84.3 and 2.4 kcal mol(-1), respectively. The dissociation energies D(0) for AlOAl (X (1)Sigma(g) (+)) and AlAlO (X (1)Sigma(+))-->AlO (X (2)Sigma(+))+Al ((2)P) were determined to be 130.8 and 48.9 kcal mol(-1), respectively. Thus, both symmetric AlOAl (X (1)Sigma(g) (+)) and asymmetric AlAlO (X (1)Sigma(+)) isomers are expected to be thermodynamically stable with respect to the dissociation into AlO (X (2)Sigma(+)) + Al ((2)P) and kinetically stable for the isomerization reaction (AlAlO-->AlOAl) at sufficiently low temperatures.     

Coupled-cluster study of the electronic structure and energetics of tetrasulfur, S4

Ab initio electronic structure calculations are reported for S4. Geometric and energetic parameters are calculated using the singles and doubles coupled-cluster method, including a perturbutional correction for connected triple excitation, CCSD(T), together with systematic sequences of correlation consistent basis sets extrapolated to the complete basis set limit. The geometry for the ground state singlet C2v structure of S4 is in good agreement with the microwave structure determined for S4. There is a low-lying D2h transition state at 1.6 kcal/mol which interchanges the long S-S bond. S4 has a low-lying triplet state (3B 1u) in D2h symmetry which is 10.8 kcal/mol above the C2v singlet ground state. The S-S bond dissociation energy for S4 into two S2(3Sigma*g) molecules is predicted to be 22.8 kcal mol(-1). The S-S bond energy to form S3+S(3P) is predicted to be 64 kcal/mol.     

Electronic structure and lifetimes of GaX(2+) (X = N, O, F) in the gas phase. Unraveling stability trends

High-level single-reference CCSD(T) and multireference MS-CASPT2/CASSCF ab initio calculations have been carried out to determine the electronic structure and the lifetimes of GaX(2+) (X = N, F) doubly charged diatomic systems. Lifetimes were evaluated using the Exterior Complex Scaling (ECS) method implemented with basis sets of B-spline functions. The results obtained led to the conclusion that both species GaN(2+) and GaF(2+) can be considered as bound systems in the gas phase. GaN(2+) is a kinetically stable dication, because although it is thermodynamically unstable with respect to its dissociation into Ga(+) ((1)S) + N(+) ((3)P) the barrier to be surmounted is rather high and wide, so that the lowest 14 vibrational states of this system are bound. GaF(2+) is found to be a thermodynamically stable species with respect to its dissociation into Ga(+) ((1)S) + F(+) ((1)D). With respect to its dissociation into Ga(+) ((1)S) + F(+) ((3)P), strictly speaking, it is metastable. However, the crossing between the attractive PEC and the repulsive one occurs at rather large internuclear distances, and therefore it can be only explored by highly vibrationally excited molecules. Thus, in practical terms GaF(2+) can be considered as a bound species. The behavior of GaN(2+) and GaF(2+) is in clear contrast with that predicted for GaO(2+), which was found to be metastable with respect to its dissociation into Ga(+) ((1)S) + O(+) ((4)S), with lifetimes in the range of ns to seconds. This seems to indicate that the primary factor governing the stability and lifetimes of these doubly charged diatomic species is the ionization energy of the atom X bound to Ga.     

Dissociation of the OCS+ ion in low-lying electronic states studied using multiconfiguration second-order perturbation theory

Complete active space self-consistent-field (CASSCF) and multiconfiguration second-order perturbation theory (CASPT2) calculations with atomic natural orbital basis sets were performed to investigate the S-loss direct dissociation of the 1 2Pi(X 2Pi), 2 2Pi(A 2Pi), 1 2Sigma+(B 2Sigma+), 1 4Sigma-, 1 2Sigma-, and 1 2Delta states of the OCS+ ion and the predissociations of the 1 2Pi, 2 2Pi, and 1 2Sigma+ states. Our calculations indicate that the S-loss dissociation products of the OCS(+) ion in the six states are the ground-state CO molecule plus the S+ ion in different electronic states. The CASPT2//CASSCF potential energy curves were calculated for the S-loss dissociation from the six states. The calculations indicate that the dissociation of the 1 4Sigma- state leads to the CO + S+ (4Su) products representing the first dissociation limit; the dissociations of the 1 2Pi, 1 2Sigma-, and 1 2Delta states lead to the CO + S+(2Du) products representing the second dissociation limit; and the dissociations of the 2 2Pi and 1 2Sigma+ states lead to the CO + S+(2Pu) products representing the third dissociation limit. Seams of the 1 2Pi-1 4Sigma-, 2 2Pi-1 4Sigma-, 2 2Pi-1 2Sigma-, 2 2Pi-1 2Delta, and 1 2Sigma(+)-1 4Sigma- potential energy surface intersections were calculated at the CASPT2 level, and the minima along the seams were located. The calculations indicate that within the experimental energy range (15.07-16.0 eV) the 2 2Pi(A 2Pi) state can be predissociated by 1 4Sigma- forming the S+(4Su) ion and can undergo internal conversion to 1 2Pi followed by the direct dissociation of 1 2Pi forming S+(2Du) and that within the experimental energy range (16.04-16.54 eV) the 1 2Sigma+(B 2Sigma+) state can be predissociated by 1 4Sigma- forming the S+(4Su) ion and can undergo internal conversion to 2 2Pi followed by the predissociation of 2 2Pi by 1 2Sigma- and 1 2Delta forming the S+(2Du) ion. These indications are in line with the experimental fact that both the 4Su and 2Du states of the S+ ion can be formed from the 2 2Pi and 1 2Sigma+ states of the OCS+ ion.     

Ab initio study of the structures and stabilities of the dimer of ethyl cation, (C(2)H(+)(5))(2) and related C(4)H(10)(2+) isomers.

Ab initio calculations at the MP4(SDTQ)/6-311G//MP2/6-31G level were performed to study the structures and stabilities of the dimer of ethyl cation, (C(2)H(+)(5))(2), and related C(4)H(10)(2+) isomers. Two doubly hydrogen bridged diborane type trans 1 and cis 2 isomers were located as minima. The trans isomer was found to be more favorable than cis isomer by only 0.6 kcal/mol. Several other minima for C(4)H(10)(2+) were also located. However, the global energy minimum corresponds to C-H (C(4) position) protonated 2-butyl cation 10. Structure 10 was computed to be substantially more stable than 1 by 31.7 kcal/mol. The structure 10 was found to be lower in energy than 2-butyl cation 13 by 34.4 kcal/mol.     

Spectroscopic characterization of the ground and low-lying electronic states of Ga2N via anion photoelectron spectroscopy

Anion photoelectron spectra of Ga(2)N(-) were measured at photodetachment wavelengths of 416 nm(2.978 eV), 355 nm(3.493 eV), and 266 nm(4.661 eV). Both field-free time-of-flight and velocity-map imaging methods were used to collect the data. The field-free time-of-flight data provided better resolution of the features, while the velocity-map-imaging data provided more accurate anisotropy parameters for the peaks. Transitions from the ground electronic state of the anion to two electronic states of the neutral were observed and analyzed with the aid of electronic structure calculations and Franck-Condon simulations. The ground-state band was assigned to a transition between linear ground states of Ga(2)N(-)(X (1)Sigma(g) (+)) and Ga(2)N(X (2)Sigma(u) (+)), yielding the electron affinity of Ga(2)N, 2.506+/-0.008 eV. Vibrationally resolved features in the ground-state band were assigned to symmetric and antisymmetric stretch modes of Ga(2)N, with the latter allowed by vibronic coupling to an excited electronic state. The energy of the observed excited neutral state agrees with that calculated for the A (2)Pi(u) state, but the congested nature of this band in the photoelectron spectrum is more consistent with a transition to a bent neutral state.     

Hartree-Fock-Heitler-London method. 2. First and second row diatomic hydrides

The Hartree-Fock-Heitler-London, HF-HL, method is a new ab initio approach which variationally combines the Hartree-Fock, HF, and the Heitler-London, HL, approximations, yielding correct dissociation products. Furthermore, the new method accounts for nondynamical correlation and explicitly considers avoided crossing. With the HF-HL model we compute the ground-state potential energy curves for H2 [1Sigma+g], LiH [X 1Sigma+], BeH [2Sigma+], BH [1Sigma+], CH [2Pi], NH [3Sigma-], OH [2Pi], and FH [1Sigma+], obtaining in average 80% of the experimental binding energy with a correct representation of bond breaking. Inclusion of ionic configurations improves the computed binding energy. The computed dipole moment is in agreement with laboratory data. The dynamical and nondynamical correlation energies for atomic and molecular systems with 2-10 electrons are analyzed. For BeH the avoided crossing of the two lowest [2Sigma+] states is considered in detail. The HF-HL function is proposed as the zero-order reference wave function for molecular systems. To account for the dynamical correlation energy a post-HF-HL technique based on multiconfiguration expansions is presented. We have computed the potential energy curves for H2 [1Sigma+g], HeH [2Sigma+], LiH [X1Sigma+], LiH [A1Sigma+], and BeH [2Sigma+]. The corresponding computed binding energies are 109.26 (109.48), 0.01 (0.01), 57.68 (58.00), 24.19 (24.82), and 49.61 (49.83) kcal/mol, with the experimental values given in parentheses. The corresponding total energies are -1.1741, -3.4035, -8.0695, -7.9446, and -15.2452 hartrees, respectively, the best ab initio variational published calculations, H2 excluded.     

Nonplanarity at tri-coordinated aluminum and gallium: cyclic structures for X3Hn(m) (X = B, Al, Ga)

Structures and energies of X3H3(2-), X3H4-, X3H5, and X3H6+ (X = B, Al and Ga) were investigated theoretically at B3LYP/6-311G(d) level. The global minimum structures of B are not found to be global minima for Al and Ga. The hydrides of the heavier elements Al and Ga have shown a total of seven, six and eight minima for X3H3(2-), X3H(4-), and X3H5, respectively. However, X3H(6+) has three and four minima for Al and Ga, respectively. The nonplanar arrangements of hydrogens with respect to X3 ring is found to be very common for Al and Ga species. Similarly, species with lone pairs on heavy atoms dominate the potential energy surfaces of Al and Ga three-ring systems. The first example of a structure with tri-coordinate pyramidal arrangement at Al and Ga is found in X3H(4-) (2g), contrary to the conventional wisdom of C3H3+, B3H3, etc. The influence of pi-delocalization in stabilizing the structures decreases from X3H3(2-) to X3H6+ for heavier elements Al and Ga. In general, minimum energy structures of X3H4-, X3H5, and X3H6+ may be arrived at by protonating the minimum energy structures sequentially starting from X3H3(2-). The resonance stabilization energy (RSE) for the global minimum structures (or nearest structures to global minimum which contains pi-delocalization) is computed using isodesmic equations.     

Channel switching effect in photodissociating N2O+ ion at 312.5 nm

A experimental observation is presented on the N2O+ photodissociation process, which exhibits a complete channel switching effect in a narrow energy range. The N2O+ ions, prepared at the X2Pi (000) state by (3+1) multiphoton ionization of neutral N2O molecules at 360.6 nm, were excited to different vibrational levels in the A2Sigma+ state in a wavelength range of 275-328 nm. Based on the estimates of total released kinetic energies from the time-of-flight mass spectrum, it was found that the dissociation pathway of N2O+ (A2Sigma+), NO+ (X1Sigma+) + N(4S) with lower dissociation limit, changes abruptly and completely to NO+ (X1Sigma+) + N(2D) with higher dissociation limit, in a excitation energy range of merely 250 cm(-1) at lambda approximately 312.5 nm. This phenomenon was explained by competition between the two dissociation pathways across the special excitation energy region.     

Mechanisms of [1,3]-Sigmatropic Migrations of the Nitroso Group in the ON-X-CH=X Systems (X = O,S, Se,NH, CH<Subscript>2</Subscript>)

[1,3]-Sigmatropic migrations of the nitroso group in the systems ON-X-CH=X (X = O, S, Se, NH, CH₂) were studied by MP2(fc)/6-311+G** and B3LYP/6-311+G** quantum-chemical calculations. The energy barrier in the process was estimated at 2.4 (2.5), 20.0 (25.0), and 22.3 (23.4) kcal/mol for X = O, NH, and CH₂, respectively. The energy minima for X = S and X = Se correspond to cyclic structures with two-coordinate NO group, which are more stable than acyclic structures by 9.3 (4.3) (X = S) or 13.1 (5.7) kcal/mol (X = Se).     

Ab initio study of the reactions of Ga(2P, 2S, and 2P) with methane

The interactions of Ga(2P:4s(2)4p1, 2S:4s(2)5s1, and 2P:4s(2)5p1) with CH4 is studied by means of Hartree-Fock self-consistent-field (SCF) calculations using relativistic effective core potentials and multiconfigurational-SCF plus multireference variational and perturbational on second-order M?ller-Plesset configuration interaction calculations. The Ga atom 2P(4s(2)5p1) state can spontaneously insert into the CH4. In this interaction the 4 2A potential energy surface is initially attractive and becomes repulsive only after meeting with the 3 2A surface, adiabatically linked with the Ga(2S:4s(2)5s1) + CH4 fragments. The Ga atom 2S(4s(2)5s1) excited state inserts in the C-H bond. In this interaction the 3 2A potential energy surface initially attractive, becomes repulsive after meet the 2 2A' surface linked with the Ga(2P:4s(2)4p1) + CH4 fragments. The two 2A curves (2 2A and X 2A) derived from the interaction of Ga(2P:4s(2)4p1) atoms with methane molecules are initially repulsive. The 2 2A curve after an avoided crossing with the 3 2A curve goes smoothly down and reaches a minimum: after this point, it shows an energy barrier. The top of this barrier is located below the energy value of the Ga(2S:4s(2)5s1) + CH4 fragments. After this energy top the 2 2A curve goes down to meet the X 2A curve. The 2 2A curve becomes repulsive after the avoided crossing with the X 2A curve. The X 2A curve becomes attractive only after its avoided crossing with the 2 2A curve. The lowest-lying X 2A potential leads to the HGaCH3 X 2A intermediate molecule. This intermediate molecule, diabatically correlated with the Ga(2S:4s(2)5s1) + CH4 fragments, which lie 6 kcal/mol, above the ground-state reactants, the dissociation channels of this intermediate molecule leading to the GaH + CH3 and H + GaCH3 products. These products are reached from the HGaCH3 intermediate without activation barriers. The work results suggest that Ga atom in the first excited state in gas-phase methane molecules could produce better quality a-C:H thin films through CH3 radicals, as well as gallium carbide materials.     

The structure of small gallium nitride clusters

The geometry, vibrational frequencies and stability of the structural isomers of small gallium nitride clusters (n = 2–4) have been investigated using density functional theory. The lowest energy structures are cyclic. The ground electronic state of the cyclic forms for n > 2 is the singlet state. All of the cyclic structures have D_nh symmetry. The caged structures for Ga₄N₄ lie higher in energy than the planar cumulenic monocyclic ring. The Ga‐N bond dominates the structures for many isomers, so that one dissociation channel is loss of a GaN monomer. However, unlike the corresponding boron and aluminum clusters, dissociation into larger fragments is energetically favored. The structural properties of the gallium nitride clusters are similar to those of the analogous AIN (and BN) clusters. © 2000 John Wiley & Sons, Inc. Heteroatom Chem 11:281–286, 2000     

Ab initio and analytic intermolecular potentials for Ar-CH(3)OH

Ab initio calculations at the CCSD(T)/aug-cc-pVTZ level of theory were used to characterize the Ar-CH(3)OH intermolecular potential energy surface (PES). Potential energy curves were calculated for four different Ar + CH(3)OH orientations and used to derive an analytic function for the intermolecular PES. A sum of Ar-C, Ar-O, Ar-H(C), and Ar-H(O) two-body potentials gives an excellent fit to these potential energy curves up to 100 kcal mol(-1), and adding an additional r(-n) term to the Buckingham two-body potential results in only a minor improvement in the fit. Three Ar-CH(3)OH van der Waals minima were found from the CCSD(T)/aug-cc-pVTZ//MP2/aug-cc-pVTZ calculations. The structure of the global minimum is in overall good agreement with experiment (X.-C. Tan, L. Sun and R. L. Kuczkowski, J. Mol. Spectrosc., 1995, 171, 248). It is T-shaped with the hydroxyl H-atom syn with respect to Ar. Extrapolated to the complete basis set (CBS) limit, the global minimum has a well depth of 0.72 kcal mol(-1) with basis set superposition error (BSSE) correction. The aug-cc-pVTZ basis set gives a well depth only 0.10 kcal mol(-1) smaller than this value. The well depths of the other two minima are within 0.16 kcal mol(-1) of the global minimum. The analytic Ar-CH(3)OH intermolecular potential also identifies these three minima as the only van der Waals minima and the structures predicted by the analytic potential are similar to the ab initio structures. The analytic potential identifies the same global minimum and the predicted well depths for the minima are within 0.05 kcal mol(-1) of the ab initio values. Combining this Ar-CH(3)OH intermolecular potential with a potential for a OH-terminated alkylthiolate self-assembled monolayer surface (i.e., HO-SAM) provides a potential to model Ar + HO-SAM collisions.     

Electronic and geometric structure of the 3d-transition metal monocarbonyls MCO, M=Sc, Ti, V, and Cr

The electronic and geometric structure of the 3d-transition metal monocarbonyls MCO, M=Sc, Ti, V, and Cr was investigated through coupled cluster (CC) and multireference variational methods (MRCI) combined with large basis sets. For the ground and a few low-lying excited states complete potential energy profiles were constructed at the CC-level of theory. The M-CO dissociation energies of the ground states X 4Sigma-,X 5Delta,X 6Sigma+, and X 7A' are calculated to be 36, 27, 18, and 2 kcal/mol for ScCO, TiCO, VCO, and CrCO, with respect to Sc(4F),Ti(5F),V(6D),Cr(7S)+CO(X 1Sigma+). The bonding is rather complicated and could be attributed mainly to pi-conjugation effects between the M and CO pi-electrons, along with weak sigma-charge transfer from CO to M atoms. Almost in all cases the metal atoms appear to be slightly positively charged, at least according to the direction of the dipole moment vectors and the MRCI population densities.