Über Elektronendriftbeweglichkeit und Stoßionisierung in KBr-Kristallen bei hohen elektrischen Feldstärken

A swarm of electrons passing a KBr-crystal has been investigated by fast oscilloscopic techniques at high electric fields (3×10⁴ to 4×10⁵ V/cm). From the temporal current shape we determined the electron drift mobilityμ=15±2 cm²/Vsec, the electron life timeτ=2±0.3 × 10^?7 sec and the multiplication factor. From this measurement the ionization coefficientα for electrons was calculated as a function of the applied electric field.     

Two-dimensional electron-hole system in a HgTe-based quantum well

A two-dimensional electron-hole system consisting of light high-mobility electrons with a density of N _s = (4–7) × 10¹⁰ cm^?2 and a mobility of μ _n = (4–6) × 10⁵ cm²/V s and heavier low-mobility holes with a density of P _s = (0.7–1.6) × 10¹¹ cm^?2 and a mobility of μ _p = (3–7) × 10⁴ cm²/V s has been discovered in a quantum well based on mercury telluride with the (013) surface orientation. The system exhibits a number of specific magnetotransport properties in both the classical magnetotransport (positive magnetoresistance and alternating Hall effect) and the quantum Hall effect regime. These properties are associated with the coexistence of two-dimensional electrons and holes.     

Reversibler Gleichfeld- und Mikrowellen-Durchschlag in n-Typ-Germanium bei 4,2 °K

The microwave induced breakdown characteristic inn-type germanium at 4.2 °K has been observed and compared with the d.c. induced breakdown characteristic obtained from the same sample. The effective microwave breakdown field intensity is nearly equal to the field intensity observed in d.c. induced breakdown. However, in the breakdown region with conductivities greater than 0.1 ohm^?1 cm^?1 a relaxation effect was found and interpreted qualitatively as momentun relaxation. In the initial breakdown the relaxation time τ _m is small,ω ²τ _m ² being ?1 whereω/2π=9·10⁹s^?1 is the microwave frequency. The relaxation time is determined by predominant neutral impurity scattering with at last 5·10¹⁴ impurities per cm³. This scattering mechanism becomes ineffective when the impurities are ionized by hot carriers. Ionized impurity scattering or acoustic phonon scattering will then be predominant with increased and energy dependent values of τ _m . The increased phase shift between carriers and field causes a decreased energy transfer from the field to the carriers, an accordingly smaller ionization rate, and finally results in a nearly constant a.c. conductivity. The observed anisotropy of the breakdown field intensity is in qualitative agreement with the assumption that only carriers in “hot” valleys of the conduction band initiate the breakdown by impact ionization. The unsufficient quantitative agreement may be due to an inhomogeneity of doping which is suggested by comparing the values of the ohmic low temperature conductivity of the samples.     

Study of <Superscript>179</Superscript>Hf<Superscript><Emphasis Type="Italic">m</Emphasis>2</Superscript> excitation

Isomeric ratios of ¹⁷⁹Hf ^m2,g yields in the (γ, n) reaction and the cross section for the ¹⁷⁹Hf ^m2 population in the (α, p) reaction are measured for the first time at the end-point energies of 15.1 and 17.5 MeV for bremsstrahlung photons and 26 MeV for alpha particles. The results are σ = (1.1 ± 0.11) × 10^?27 cm² for the ¹⁷⁶Lu(α, p)¹⁷⁹Hf ^m2 reaction and Y _m2/Y _g = (6.1 ± 0.3) × 10^?6 and (3.7 ± 0.2) × 10^?6 for the ¹⁸⁰Hf(γ, n)¹⁷⁹Hf ^m22 reaction at Е _ep =15.1 and 17.5 MeV, respectively. The experimental data on the relative ¹⁷⁹Hf ^m2 yield indicate a single-humped shape of the excitation function for the ¹⁸⁰Hf(γ, n)¹⁷⁹Hf ^m2 reaction. Simulation is performed using the TALYS-1.4 and EMPIRE-3.2 codes.     

Ionization mechanisms of aluminum acceptor impurity in silicon

Processes of ionization of shallow acceptor centers (ACs) in silicon are studied. In crystalline silicon samples with phosphorus (1.6×10¹³, 2.7×10¹³, and 2.3×10¹⁵cm^?3) and boron (1.3×10¹⁵cm^?3) impurities, _μAl impurity atoms were produced by implantation of negative muons. It is found that thermal ionization is the main mechanism for ionizing the Al acceptor impurity in both p-type and n-type silicon with an impurity concentration of ?10¹⁵cm^?3 at T>45 K. The thermal ionization rate of Al ACs in Si varies from ～10⁵ to ～10⁶s^?1 in the temperature range 45–55 K.     

Effects on the non-relativistic dynamics of a charged particle interacting with a Chern-Simons potential

The hydrogen atom in two dimensions, described by a Schrödinger equation with a Chern-Simons potential, is numerically solved. Both its wavefunctions and eigenvalues were determined for small values of the principal quantum number n. The only possible states correspond to l = 0. How the result depends on the topological mass of the photon is also discussed. In the case n = 1, the energy of the fundamental state, corresponding to different choice for the photon mass scale, are found to be comprehended in the interval ?3.5 × 10^-3 eV ≤ E ≤ ?9.0 × 10^?2 eV, corresponding to a mean radius of the electron in the range (5.637 ± 0.005) × 10^?8 cm ≤ ?r? ≤ (48.87 ± 0.03) × 10^-8 cm. In any case, the planar atom is found to be very weekly bounded showing some features similar to the Rydberg atoms in three dimensions with a Coulombian interaction.     

Ion dynamics in methylcellulose–LiBOB solid polymer electrolytes

A polymer electrolyte system comprising methylcellulose (MC) as the host polymer and lithium bis(oxalato) borate (LiBOB) as the lithium ion source has been prepared via the solution cast technique. The electrolyte with the highest conductivity of 2.79 μS cm^?1 has a composition of 75 wt% MC–25 wt% LiBOB. The mobile ion concentration (n) in this sample was estimated to be 5.70?×?10²⁰ cm^?3. A good correlation between ionic conductivity, dielectric constant, and free ion concentration has been observed. The ratio of mobile ion number density (n) at a particular temperature to the concentration n ₀ of free ions at T?=?∞ (n/n ₀) and the power law exponents (s) exhibit opposite trends when varied with salt concentration.     

Electrically stimulated motion of dislocations in a constant magnetic field

This paper reports on the results of investigations into the dislocation mobility in n-Si single crystals (N _d =5×10²⁴ m^?3) upon simultaneous exposure to electric (j=3×10⁵ A/m²) and magnetic (B≤1 T) fields. It is found that the introduction of dislocations (≈10⁹ m^?2) into dislocation-free silicon doped with phosphorus leads to the appearance of the paramagnetic component of the magnetic susceptibility. The paramagnetic component increases with an increase in the dopant concentration. Similar transformations in silicon account for the formation of magnetically sensitive impurity stoppers that respond to external magnetic perturbations. An analysis of the behavior of dislocations in electric and magnetic fields has revealed a parabolic dependence of the dislocation path length on the magnetic induction B. The effective charges and mobilities of dislocations are numerically calculated from the results obtained. A model is proposed according to which the observed increase in the dislocation mobility is associated with the decrease in the retarding power of magnetically sensitive stoppers due to a local change in the magnetic characteristics of the material and the spin-dependent reactions stimulated by a magnetic field.     

Single-electron charge transfer and excitations at collisions between Bi<Superscript>4+</Superscript> ions in the kiloelectronvolt energy range

Pioneering theoretical data for single-electron charge transfer and excitations due to collisions between Bi⁴⁺ ions in the ground (6s) and metastable (6p) states are gained in the collision energy interval 5–75 keV in the center-of-mass frame. The cross sections of the processes are calculated in terms of the close-coupling method in the basis of two-electron quasi-molecular states for the Coulomb trajectory of nuclei. It is found that single-electron capture into the singlet 6s ² states of Bi³⁺ ions makes a major contribution to the charge transfer total cross section for Bi⁴⁺(6s) + Bi⁴⁺(6s) collisions (reaction 1), whereas single-electron capture into the singlet 6s6p states is the basic contributor to the total cross section in Bi⁴⁺(6s) + Bi⁴⁺(6p) collisions (reaction 2). In the collision energy interval mentioned above, the collision cross sections vary between 1.2 × 10^?17 and 1.9 × 10^?17 cm² for reaction 1 and between 3.8 × 10^?17 and 5.3 × 10^?17 cm² for reaction 2. In reaction 1, the 6s → 6p excitation cross sections vary from 0.6 × 10^?16 to 0.8 × 10^?16 cm² for the singlet channel and from 2.2 × 10^?16 to 2.8 × 10^?16 cm² for the triplet channel. The calculation results are compared with the data obtained in experiments with crossed ion beams of kiloelectronvolt energy. The fraction of metastable ions in the beams is estimated by comparing the experimental data with the weighted average theoretical results for the cross sections of reactions 1 and 2. From the data for the charge transfer cross sections, one can estimate particle losses in relativistic beams due to a change in the charge state of the ions colliding with each other in the beam because of betatron oscillations.     

The signal photon flux,background photons and shot noise in electromagnetic response of high-frequency relic gravitational waves

On the basis of the electromagnetic response of high frequency relic gravitational waves (HFRGWs), we research on more accurate calculation of signal (i.e. transverse perturbative photon flux (PPF)) and background photons flux (BPF) in the sycro-resonance electromagnetic system, which consists of Gaussian beam (GB), a static magnetic field and fractal membranes. According to the relationship between frequency of gravitational waves and its dimensionless amplitude, we focus on the HFRGWs with ν _g  = 2.9 GHz, h ~ 10^?30 in the pre-big bang and quintessential inflationary models. The results show the peak value of the transverse BPF (~ 10²⁰ s^?1) is around |x| = 0.08 m, where |x| is the transverse distance to the longitudinal symmetrical surface of the GB, while the maximum transverse PPF always appears at x = 0 (\({N^{(1)}_{x} \sim 2.60\times10^{2}\,{\rm s}^{-1}}\) with the optimal phase difference between the GB and the resonant component of the HFRGWs δ = (n + 0.9)π, n = 0, 1, 2 . . .). However, the observable PPF should be ~ 1.19 × 10² s^?1 because of the stochastic nature of the HFRGWs’ phase. Since the decay speed of BPF is much quicker than PPF, it is hopeful to figure out the signal in some optimal regions. Moreover, we compare the decay speed of BPF and PPF in nature mode, and find the threshold value of x where PPF exceeds to BPF. It demonstrates that the limitation of our detection sensitivity comes from the strength of PPF rather than swamping by BPF. On the other hand, with the fractal membrane, the comparison between BPF and PPF provides the optimal detection area \({x\in[0.28,1]}\) m. In addition, through the calculation of shot noise and conservative estimation, we find that our sensitivity is h = 10^?26 in 4 months signal accumulate time.     

A study of the neutrino production of <Emphasis Type="Italic">φ</Emphasis> and <Emphasis Type="Italic">D</Emphasis><Stack><Subscript><Emphasis Type="Italic">s</Emphasis></Subscript><Superscript>+</Superscript></Stack> mesons

The charged current neutrino production of φ and D _s ⁺ mesons is studied, using the data obtained with the SKAT bubble chamber exposed to the Serpukhov accelerator neutrino beam. It is found that the φ production occurs predominantly in the forward hemisphere of the hadronic c.m.s. (at x _F > 0, x _F being the Feynman variable), with the mean yield strongly exceeding the expected yield of directly produced φ mesons and varying from 〈n _φ(x _F s 0)〉 = (0.92 ± 0.34) × 10^?2 at W > 2 GeV up to (1.23 ± 0.53) × 10^?2 at W > 2.6 GeV and (1.44 ± 0.69) × 10^?2 at W > 2.9 GeV, W being the invariant mass of the hadronic system. For the first time, the inclusive yield of leading D _s ⁺ mesons carrying more than z = 0.85 of the current c-quark energy is estimated: 〈n _{D s} ⁺ (z > 0.85, W > 2.9 GeV)〉 = (6.64 ± 1.91) × 10^?2. It is shown that the shape of measured φ meson differential spectrum on xF is reproduced by that expected from the D _s ⁺ → φX decays. An indication was obtained that this expected spectrum underestimates the measured φ yield.     

Galvanomagnetic study of the quantum-well valence band of germanium in the Ge<Subscript>1−x</Subscript>Si<Subscript>x</Subscript>/Ge/Ge<Subscript>1−x</Subscript>Si<Subscript>x</Subscript> potential well

The structure of the quantum-well valence band in a Ge(111) two-dimensional layer is calculated by the self-consistent method. It is shown that the effective mass characterizing the motion of holes along the germanium layer is almost one order of magnitude smaller than the mass for the motion of heavy holes along the [111] direction in a bulk material (this mass is responsible for the formation of quantum-well levels). This creates a unique situation in which a large number of subbands appear to be populated at moderate values of the layer thickness d _w and the hole concentration p _s . The depopulation of two or more upper subbands in a 38-nm-thick germanium layer at a hole concentration p _s = 5 × 10¹⁵ m^?2 is revealed from the results of measuring the magnetoresistance in a strong magnetic field aligned parallel to the germanium layers. The destruction of the quantum Hall state at a filling factor ν = 1 indicates that the two lower subbands merge together in a self-formed potential profile of the double quantum well. It is demonstrated that, in a quasi-two-dimensional hole gas, the latter effect should be sensitive to the layer strain.     

Elastische und unelastische Streuung von Elektronen an Gasen

The theoretical differential cross section for the elastic scattering and for the excitation of optical transitions in helium by electron impact has been refined in Born approximation by use of the two parameter Eckart eigenfunction for the ground state and for the excited states. The angular distributions of 25 kev electrons scattered elastically and inelastically by helium were measured in the angular range 2·3·10^?4≦?≦4·10^?2. The intensity distribution of the elastically scattered electrons is in accordance with the theoretical curve for?>7·10^?3 and is disturbed at smaller angles by the primary beam. Normalization of the experimental values to the theoretical elastic differential cross section leads to agreement between the experimental differential cross section for the excitation of the 2¹ P and 3¹ P state and the scattering formulae given in this paper. There are small systematic deviations (<20%) for the 2¹ P differential cross section in the angular range 3·10^?3<?<1·10^?2 only. The oscillator strength of these two transitions has been determined from the scattering measurements:f ₂₁=0·312±0·04 andf ₃₁=0·0898±0·006.     

Excitation of even levels of erbium atoms without a change in the number of 4<Emphasis Type="Italic">f</Emphasis> electrons

The excitation of even levels of erbium atoms by slow electrons that occurs without a change in the number of electrons in the 4f shell is experimentally studied. The levels investigated belong to the 4f ¹²6s7s, 4f ¹²5d6s, 4f ¹²6s6d configurations. The cross sections measured at an electron energy of 30 eV lie within the range (0.2–18) × 10^?18 cm².     

Eine empfindliche magnetische Waage zur Bestimmung kleiner Suszeptibilitätsdifferenzen

For a determination of thecarrier susceptibility in a semiconductor sample it is necessary to measure the susceptibilitydifference between different doped samples. The present article describes a susceptibility balance (torsion pendulum) for difference measurements between 140 and 300° K in vacuo. A permanent magnet with cylindrical yoke is used. The achievable accuracy of the susceptibilitydifference amounts to ±0·03% of thewhole susceptibility. The smallest detectable difference in mass susceptibility isΔχ=3 · 10^?11 cgs _m (according to the paramagnetism of 3 · 10¹⁵ electron spins at 140° K).     

Der Faraday-Effekt an amorphen Selenschichten

Cl^38m was produced by neutron activation of chlorine containing samples in a pneumatic irradiation facility. The decay of the Cl³⁸-isomer was investigated by various scintillation spectrometer technics. The half-life and the internal conversion coefficient α of the 0.66 MeV isomeric transition was found to beT _1/2=0.74±0.03 sec and α=(5.0±1.2)×10^?4. These data suggest aM-3 transition between an isomeric state with the spinI=5^? and the ground-state of Cl-38 (I=2^?).     

Lithium diffusion in Li<Subscript>3</Subscript>V<Subscript>2</Subscript>(PO<Subscript>4</Subscript>)<Subscript>3</Subscript>-based electrodes: a joint analysis of electrochemical impedance,cyclic voltammetry,pulse chronoamperometry,and chronopotentiometry data

In order to establish the mechanism and to determine the parameters of lithium transport in electrodes based on lithium-vanadium phosphate (Li₃V₂(PO₄)₃), the kinetic model was designed and experimentally tested for joint analysis of electrochemical impedance (EIS), cyclic voltammetry (CV), pulse chronoamperometry (PITT), and chronopotentiometry (GITT) data. It comprises the stages of sequential lithium-ion transfer in the surface layer and the bulk of electrode material’s particles, including accumulation of lithium in the bulk. Transfer processes at both sites are of diffusion nature and differ significantly, both by temporal (characteristic time, τ) and kinetic (diffusion coefficient, D) constants. PITT data analysis provided the following D values for the predominantly lithiated and delithiated forms of the intercalation material: 10^?9 and 3 × 10^?10 cm² s^?1, respectively, for transfer in the bulk and 10^?12 cm² s^?1 for transfer in the thin surface layer of material’s particles. D values extracted from GITT data are in consistency with those obtained from PITT: 3.5–5.8 × 10^?10 and 0.9–5 × 10^?10 cm² s^?1 (for the current and currentless mode, respectively). The D values obtained from EIS data were 5.5 × 10^?10 cm² s^?1 for lithiated (at a potential of 3.5 V) and 2.3 × 10^?9 cm² s^?1 for delithiated (at a potential 4.1 V) forms. CV evaluation gave close results: 3 × 10^?11 cm² s^?1 for anodic and 3.4 × 10^?11 cm² s^?1 for cathodic processes, respectively. The use of complex experimental measurement procedure for combined application of the EIS, PITT, and GITT methods allowed to obtain thermodynamic E,c dependence of Li₃V₂(PO₄)₃ electrode, which is not affected by polarization and heterogeneity of lithium concentration in the intercalate.     

Zeitliches Abklingen und Anisotropie von p-Terphenyl- undp-Terphenyl-Anthrazen-Mischkristallen bei Beschuß mit α-Teilchen

The time dependence of scintillation intensity from single crystals ofp-terphenyl and mixed crystals ofp-terphenyl and anthracene after bombarding with α-particles was investigated at the two temperaturesT=296 °K andT=92 °K. For the crystals ofp-terphenyl the time dependence of the scintillation anisotropy was also measured. Using the formulas given byKing andVoltz the decay curves ofp-terphenyl were decomposed into two components. Good agreement between experiment and theory was found. The ratio of the prompt intensity to the delayed intensity was determined to be 1∶2 atT=296 °K and 1∶3 atT=92 °K. The diffusion constants for triplet excitons were calculated to beD _T(296 °K)≈10^?5 cm² sec^?1 andD _T(92 °K)≈ 2×10^?6 cm² sec^?1, and the triplet-triplet interaction rate constantsχ _tt(296 °K)≈ 2.5×10^?11 cm³ sec^?1 andχ _tt(92 °K)≈0.5×10^?11 cm³ sec^?1.     

A hydrogen atom in a superstrong magnetic field and the Zeldovich effect

We consider the problem of a hydrogen atom in a superstrong magnetic field, B? B _a =2.35×10⁹ G. The analytical formulas that describe the energy spectrum of this atom are derived for states with various quantum numbers n_ρ and m. A comparison with available calculations shows their high accuracy for B?B _a . We note that the derived formulas point to a manifestation of the Zeldovich effect, i.e., a rearrangement of the atomic spectrum under the influence of strong short-range Coulomb potential distortion. We discuss the relativistic corrections to level energies, which increase in importance with magnetic field and become significant for B?10¹⁴ G. We suggest the parameters in terms of which the Zeldovich effect has the simplest form. Analysis of our precision numerical calculations of the energy spectrum for a hydrogen atom in a constant magnetic field indicates that the Zeldovich effect is observed in the spectrum of atomic levels for superstrong fields, B?5×10¹¹ G. Magnetic fields of such strength exist in neutron stars and, possibly, in magnetic white dwarfs. We set lower limits for the fields B_min required for the manifestation of this effect. We discuss some of the properties of atomic states in a superstrong magnetic field, including their mean radii and quadrupole moments. We calculated the probabilities of electric dipole transitions between odd atomic levels and a deep ground level.     

Über Kristallstruktur und elektrische Eigenschaften der Wismutselenide Bi2Se2 und Bi2Se3

The properties of bismuth triselenide (Bi₂Se₃) are already known to a certain extent through the work of several authors, while it was still an open question whether there exists an individual solid phase of BiSe. Further information on this subject could be obtained by the successful growth and investigation of single crystals of both Bi₂Se₃ and Bi₂Se₂. X-ray analysis by means of goniometry, Weißenberg, Laue, and Debye-Scherrer diagrams confirmed the known crystal structure of Bi₂Se₃ (ditrigonal scalenohedral;D _3d ⁵ ?R—m; with the hexagonal axes:a=4·15 Å andc=28·55 Å, and 3 molecules per unit cell). As to Bi₂Se₂ it can be shown that it belongs to the same class but to a different space group (D _3d ¹ ?P— 1m orD _3d ³ ?P—m 1; hexagonal axes:a=4·15 Å,c=22·84 Å, unit cell: 3 molecules, if the formula Bi₂Se₂ is adopted). Common to both is a subcell with the dimensions:a′=a=4·15 Å andc′=5·71 Å. The temperature dependence of electrical conductivity and Hall coefficient was measured on several specimens having different crystal orientations. The most striking difference is the high anisotropy of Bi₂Se₃ (σ _a σ _c =10) as compared with Bi₂Se₂ (σ _a /σ _c <2). All specimens turned out to ben-type. The room temperature carrier concentration observed was:n (Bi₂Se3)=8·10¹⁸ cm^?3 andn (Bi₂Se₂)=4·10²⁰ cm^?3, the carrier mobility:μ(Bi₂Se3)=2·10³ cm²/V·s andμ(Bi₂Se₃)=20 cm²/V·s.