Considerable increase in thermal conductivity of a polycrystalline CVD diamond upon isotope enrichment

We measured the temperature dependence of thermal conductivity of a polycrystalline CVD diamond with natural isotope composition and an isotope enriched (99.96% ¹²C) sample at temperatures from 5 to 420 K. The isotope enriched diamond demonstrates a considerable growth of thermal conductivity at temperatures above 80 K compared to the diamond with natural composition of isotopes. At room temperature the thermal conductivity reaches 24.3 W·cm^?1K^?1, and the isotope effect makes up not less than 34%.     

Anomalous phonon thermal resistivity in superconducting Ti55Nb45 alloys

The thermal conductivity of cold-worked and heat-treated Ti₅₅Nb₄₅ alloys has been measured in the temperature range between 0.6 and 1.5 K. Anomalously strong scattering of phonons for every sample and the remarkable enhancement in the thermal resistivity caused by the annealing at 500°C on cold-worked alloys have been found. These behaviors indicate the existence of an anomalous phonon scattering mechanism besides dislocation scattering in Ti₅₅Nb₄₅ alloys. Electron diffraction patterns show the circular diffuse streaks characteristic of the precursory lattice distortion for the ω atomic configuration. Two kinds of models which correlate the anomalies in the phonon scattering with the lattice instability of the β phase of Ti-Nb matrix are described.     

磷离子注入纳米金刚石薄膜的n型导电性能与微结构研究

系统研究了磷离子注入并在不同温度退火后的纳米金刚石薄膜的微结构和电学性能.研究表明,当退火温度达到800 ℃以上时,薄膜呈良好的n型电导.Raman光谱和电子顺磁共振谱的结果表明,薄膜中金刚石相含量越高和完整性越好,薄膜电阻率越低. 这说明纳米金刚石晶粒为薄膜提供了电导.1000 ℃退火后,薄膜晶界中的非晶石墨相有序度提高,碳悬键数量降低,薄膜电阻率升高.薄膜导电机理为磷离子注入的纳米金刚石晶粒提供了n型电导,非晶碳晶界为其电导提供了传输路径. 关键词： 纳米金刚石薄膜 n型 磷离子注入     

Determination of thermal conductivity of CVD diamond films via photoacoustic measurements

A novel method of determination of polycrystalline diamond films’ thermoconductive properties using the photoacoustic effect is proposed. By this method, we studied the diamond films grown on silicon substrates using chemical vapor deposition technique. A value of thermal conductivity obtained for the films was less than half that for diamond single crystal. The decrease of thermal conductivity, as well as characteristic features of optical properties of the films, is explained by the presence of a large amount of intercrystallite boundaries and other structure defects and admixures detected using Raman and photoluminescent spectroscopies. Received: 22 October 1998 / Accepted: 27 January 1999 / Published online: 28 April 1999     

Phonon-Resonanzstreuung und Wärmeleitung in einer Silizium-Korngrenze

The thermal conductivity of a grain-boundary in silicon bicrystals has been measured in the temperature range from 12°K to 150°K using a newly developed method. The analysis of the experimental results shows that the thermal conductivity is governed by two scattering processes: the acoustical mismatch of both crystal halves and the resonant scattering of the phonons by impurity atoms of the grain boundary. A new method is thereby presented for the direct observation of phonon resonant scattering.     

The influence of structural features on the thermal conductivity of polycrystalline zinc sulfide

The thermal conductivity of single-crystal zinc sulfide and optically transparent zinc sulfide polycrystals differing in crystal grain size and density is experimentally investigated in the temperature range 80–400 K. It is shown that the thermal conductivity of polycrystalline samples substantially depends on the crystal grain size and the defect concentration in the grain-boundary layers. In zinc sulfide samples with a grain size of 1 μm, excess thermal resistance due to phonon scattering by grain boundaries is observed at temperatures T<130 K. It is demonstrated that, at higher temperatures (T>210 K), the heat transfer is associated not only with transverse phonon modes but also with longitudinal phonon modes and the role of the latter modes increases with an increase in temperature. __________ Translated from Fizika Tverdogo Tela, Vol. 44, No. 2, 2002, pp. 251–256. Original Russian Text Copyright ? 2002 by Lugueva, Luguev.     

Low temperature channeling measurements of ion implantation lattice disorder in single crystal silicon

Lattice disorder for 200-keV Sb implantations into silicon has been studied by channeling effect analysis using 400 keV proton backscattering. Implantation and analysis were performed at low temperatures in the same system without warmup. In the temperature region between 85°K and room temperature the disorder production per incident ion at low doses is implantation temperature dependent. Approximately 18,000 silicon scattering centers per incident 200-keV Sb ion are observed for 90°K implantations, and this value is nearly a factor of three greater than at room temperature. Isochronal anneal curves of low fluence, low temperature implantations show, significant annealing below room temperature. The observed disorder production per incident ion decreases with increasing implantation temperature at temperatures 50 to 100°K lower than annealing occurs following 85 or 90°K implants. Strong similarities of the implantation temperature dependence and anneal behavior of the disorder exist for Sb and B implantations into silicon and suggest that much of the lattice disorder produced by ion implantation can be understood in terms of the basic properties of the silicon target material.     

Radiation damage in diamonds subjected to helium implantation

Optical spectroscopy and volume “swelling” measurements were used to study radiation damage and graphitization of diamonds implanted with helium ions at temperatures from 77 to 373 K. It is established that the radiation damage decreases as the implantation temperature increases. This effect is explained by radiation-stimulated annealing of defects caused by damaging. It is shown that the result of formation of a graphitized layer is determined not by the implantation dose but by the level of radiation damage. It is found that the lower the implantation temperature, the lower the annealing temperatures required for the formation of a graphitized layer. It is shown that annealing of radiation defects and the formation of a graphitized layer in a diamond occur up to 1600°C.     

The effect of temperature-dependent thermal conductivity in heat transfer simulations of frozen biomaterials

The thermal conductivity value of pure water ice is inversely proportional to the temperature and decreases about 5-fold as the temperature increases from the liquid nitrogen boiling temperature (77 K to the freezing point of pure water. The temperature dependency of the thermal conductivity is typically overlooked in bioheat transfer simulations. A closed-form solution of the one-dimensional temperature distribution in frozen water and blood is presented in this study, based on a new thermal conductivity model. Results indicate that temperatures are overestimated up to 38K, and heat fluxes through the frozen region boundaries are underestimated by a factor of 2, when the temperature dependency of the thermal conductivity is neglected.     

The scattering of hydrogen,deuterium, and the rare gases from silver (111) single crystals

The scattering of hydrogen, deuterium, and the rare gases from the (111) face of silver has been studied at ultrahigh vacuum. The surfaces were prepared by argon ion bombardment and high temperature annealing. Incident angles between 20° and 65° and surface temperatures between room temperature and 573°K have been investigated. The scattering data exhibit quasi-elastic scattering (He, H₂, D₂), inelastic scattering (Ne, Ar, Kr), and trapping dominated scattering (Xe). Identification of these scattering regimes correlates with D/kT_g and is consistent with similar data from Pt(111) and W(110). The separate effects of microscopic surface roughness and thermal roughening have been identified and thermal attenuation in the elastic regime correlated with dynamical interactions rather than thermal roughening. Trapping and rotational coupling are discussed. Comparison of the data with scattering from epitaxial (111) silver indicates that the epitaxial surfaces are significantly more disordered than the single crystal surfaces.     

Temperature dependent surface and spectral modifications of nano V<Subscript>2</Subscript>O<Subscript>5</Subscript> films

Nanocrystalline V₂O₅ films have been deposited on glass substrates at 300°C substrate temperature using thermal evaporation technique and were subjected to thermal annealing at different temperatures 350, 400, and 550°C. X-ray diffraction (XRD) spectra exhibit sharper and broader characteristic peaks respectively indicating the rearrangement of nanocrystallite phases with annealing temperatures. Other phases of vanadium oxides started emerging with the rise in annealing temperature and the sample converted completely to VO₂ (B) phase at 550°C annealing. FESEM images showed an increase in crystallite size with 350 and 400°C annealing temperatures followed by a decrease in crystallite size for the sample annealed at 550°C. Transmission spectra showed an initial redshift of the fundamental band edge with 350 and 400°C while a blue shift for the sample annealed at 550°C, which was in agreement with XRD and SEM results. The films exhibited smart window properties as well as nanorod growth at specific annealing temperatures. Apart from showing the PL and defect related peaks, PL studies also supported the observations made in the transmission spectra.     

Thermal conductivity of crystalline fullerite C60 in the simple cubic phase

The behavior of the thermal conductivity k(T) of bulk faceted fullerite C₆₀ crystals is investigated at temperatures T=8–220 K. The samples are prepared by the gas-transport method from pure C₆₀, containing less than 0.01% impurities. It is found that as the temperature decreases, the thermal conductivity of the crystal increases, reaches a maximum at T=15–20 K, and drops by a factor of ∼2, proportional to the change in the specific heat, on cooling to 8 K. The effective phonon mean free path λ _p, estimated from the thermal conductivity and known from the published values of the specific heat of fullerite, is comparable to the lattice constant of the crystal λ _p∼d=1.4 nm at temperatures T>200 K and reaches values λ_p∼50d at T<15 K, i.e., the maximum phonon ranges are limited by scattering on defects in the volume of the sample in the simple cubic phase. In the range T=25−75 K the observed temperature dependence k(T) can be described by the expression k(T)∼exp(Θ/bT), characteristic for the behavior of the thermal conductivity of perfect nonconducting crystals at temperatures below the Debye temperature Θ (Θ=80 K in fullerite), where umklapp phonon-phonon scattering processes predominate in the volume of the sample. Pis’ma Zh. éksp. Teor. Fiz. 65, No. 8, 651–656 (25 April 1997)     

Thermometry of gas layers in thermal plasma CVD by pulsed-laser Rayleigh scattering

The application of Pulsed-Laser Rayleigh Scattering Thermometry (PLRST) to Chemical Vapor Deposition (CVD) processing of diamond films in a thermal induction plasma is demonstrated. Temperature profiles were measured in the reactive thermal boundary layer, characteristic features of which are a steep temperature gradient and strong chemical non-equilibrium. The temperature in the layer varies between 5000 and 1000°C. The stray light rejection problem typical for Rayleigh scattering measurements was solved successfully. In the plasma core, where atomic emission spectroscopy can be applied to temperature measurement, agreement has been obtained between plasma temperatures measured by emission spectroscopy and PLRST. In the boundary layer both point-by-point measurements and laser sheet measurements were made and adequate agreement was obtained. Technical reasons for observed variations were identified. It is concluded that PLRS is a viable non-invasive thermometer for thin reactive gas layers typical or various CVD deposition processes and technical improvements are suggested.     

Lattice thermal conductivity of skutterudite compounds

A generalized expression is used on the basis of relaxation time approximation to facilitate calculation of lattice thermal conductivity of dielectric materials as well as skutterudite family consists of compounds of the form AB₃. It is assumed that phonon scattering processes are independent and is represented by frequency dependent relaxation times. The contributions of normal three phonon scattering processes are included explicitly as redistribution of phonon momentum between two oscillation branches is considered. Magnitudes of relaxation times are estimated from the experimental data. The result for CoSb₃ is in reasonably good agreement with the experimental result in the temperature range 1–1000°K. It is observed that redistribution of phonon momentum between two oscillation branches leads to a significant suppression of thermal conductivity maximum and it is observed that for unfilled skutterudite the main dominant mechanism at the thermal conductivity maximum is three phonon normal scattering process.     

Effect of thermal annealing on spectral properties of electrodeposited carbon films

The effect of thermal annealing on properties of carbon films deposited on nickel electrodes by the electrodeposition method was studied. It has been shown that annealing at a temperature of 300°C results in the formation of nanosize diamond clusters. With an increase in the annealing temperature, the size of diamond clusters diminishes. At an annealing temperature of 900°C, all of the carbon enters into reaction with nickel, thus forming nickel carbide.     

Window materials for high power gyrotron

The room temperature application of sapphire as window material at higher frequencies is not feasible since its absorption coefficient increases almost linearly with increasing frequency in the millimeter wavelength region. At cryogenic temperature the absorption coefficient value decreases only by a few factors (factor of 2 to 3) in the 90 – 200 GHz region. The earlier reported temperature squared dependence (decrease) in the absorption coefficient or the loss tangent value is totally absent in our broad band continuous wave data we are reporting here (at 6.5 K, 35K, 77K and 300K) and one we reported at conferences earlier. Our results are verified by another technique. We utilize our precision millimeter wave dispersive Fourier transform spectroscopic techniques at room temperature and at cryogenic temperatures The extra high resistivity single crystal compensated silicon is no doubt the lowest loss material available at room temperature in the entire millimeter wavelength region At higher millimeter wave frequencies an extra high resistivity silicon window or an window made with extra high resistivity silicon coated with diamond film would certainly make a better candidate in the future. A single free standing synthetic diamond window seems to have higher absorption coefficient values at millimeter wavelength region at this time although it is claimed that it possesses good mechanical strength and higher thermal conductivity characteristics. It certainly does not rule out the use of diamond film on a single crystal high resistivity silicon to improve its mechanical strength and thermal conductivityThis research program was supported by the U.S. Department of Energy, Office of Fusion Research. Authors acknowledge the loan of a synthetic diamond specimen from Dr. Kevin Gray of Norton Diamond Company     

Nb掺杂对还原性烧结的TiO2-δ陶瓷的晶体结构及热电性能的影响

利用传统的固相反应法在还原性气氛1200 ℃下分别制备出不同Nb掺杂量的Ti_1-xNb_xO_2-δ陶瓷样品.样品的粉末X射线衍射(XRD)结果显示:Nb掺杂量x较低时样品为多相混合,当Nb掺杂量x>0.02时样品为单一的四方相金红石型结构.在室温到900 K的测试温区,测试了单相样品(x=0.02,0.03,0.04)的电导率、Seebeck系数和热导率.测试 关键词： 氧化钛陶瓷 热电性能 氧空位     

Beweglichkeitsanisotropie und Relaxation warmer Elektronen inn-Typ Germanium

The nonohmic part of the electric conductivity ofn-type germanium in a weak electric field depends on the field direction in the crystal. Measurements were made both with d.c. and microwave fields at lattice temperatures between 85 and 273° K. The anisotropy decreases with increasing field frequency and temperature. The data show that the effect of the effective mass anisotropy is enhanced by intervalley scattering. From the measured frequency dependence of the conductivity anisotropy the intervalley relaxation time is calculated and compared with results obtained from the acoustoelectric effect. In 〈001〉-direction where all 〈111〉-valleys of the conduction band are equally populated, the conductivity between 200 and 273° K is in accordance with theoretical results obtained byAdawi for an isotropic model; at lower temperature there are deviations even if ionized impurity scattering is included in the theory. The energy relaxation time is calculated from the measured frequency dependence of the 〈001〉-conductivity and compared with previous results.     

高压烧结制备Tb掺杂n型(Bi1–xTbx)2(Te0.9Se0.1)3合金及其微结构和热电性能

采用高压烧结技术制备了稀土元素Tb掺杂的n型Bi2Te2.7Se0.3基纳米晶块体热电材料.将高压烧结成型的样品于633 K真空退火36 h.研究了Tb掺杂量对样品的晶体结构和热电性能的影响.结果表明,高压烧结制备的样品为纳米结构, Tb掺杂使样品的晶胞体积变大,功率因子增大,热导率降低,从而使ZT值提高.Tb掺杂量为x=0.004是最优的掺杂量,该掺杂量的高压烧结样品经退火处理后,于373 K时ZT值达到最大为0.99,并且在323-473 K范围内, ZT值均大于0.8,这对用于温差发电领域具有重要意义.     

Lattice thermal conductivity of polyvinyl acetate at low temperatures

The lattice thermal conductivity of a non-crystalline polymer has been studied at low temperatures in the frame of the density fluctuation model by calculating the total lattice thermal conductivity of polyvinyl acetate in the temperature range 0.1–4K as an example and a very good agreement has been reported between the calculated and the experimental values of the lattice thermal conductivity in the entire temperature range of study. It is also found that at low temperatures, the lattice thermal resistivity of a non-crystalline polymer is mainly due to scattering of phonons by empty spaces.