Design and fabrication of broadband rugate filter

The design and the deposition of a rugate filter for broadband applications are discussed.The bandwidth is extended by increasing the rugate period continuously with depth.The width and the smoothness of the reflection band with the distribution of the periods are investigated.The improvement of the steepness of the stopband edges and the suppression of the side lobes in the transmission zone are realized by adding two apodized rugate structures with fixed periods at the external broadband rugate filter interfaces.The rapidly alternating deposition technology is used to fabricate a rugate filter sample.The measured transmission spectrum with a reflection bandwidth of approximately 505 nm is close to that of the designed broadband rugate filter except a transmittance peak in the stopband.Based on the analysis of the cross-sectional scanning electron microscopic image of the sample,it is found that the transmission peak is most likely to be caused by the instability of the deposition rate.     

离子束溅射和离子辅助淀积DWDM滤光片的膜厚均匀性

用离子束溅射和离子辅助淀积技术制备DWDM滤光片的关键问题是必须获得优良的膜层厚度均匀性。采用实验修正膜层厚度修正板的办法获得了较好的均匀性分布 ,给出了实验配置、实验方法和实验结果 ,并对实验结果作了分析讨论     

磁控溅射材料沉积速率的定标方法的研究

介绍了一种利用磁控溅射制备多层膜速率的定标方法。用高精度磁控溅射镀膜设备在同一块基片上先后镀制了两种周期的多层膜,用X射线衍射仪对其进行掠入射衍射测量,测量数据经线性拟合,可同时求得两种多层膜的周期,进而得到镀膜速率。与常用的定标方法相比,该方法不仅可以得到与常用定标方法相同的实验结果,而且提高了工作效率。     

双离子束溅射沉积HfO­­2光学薄膜的研究

用双离子束溅射沉积氧化铪光学薄膜,并对此工艺下制备的氧化铪薄膜进行了光学性质、残余应力、结构特性以及激光损伤特性的研究。实验结果表明,用双离子束溅射沉积的氧化铪薄膜不仅结构均匀,膜层致密,无定形结构,而且具有极低的散射和吸收,均匀的非晶结构,杂质缺陷少,激光损伤阈值高。     

双离子束溅射沉积HfO­­2光学薄膜的研究

 用双离子束溅射沉积氧化铪光学薄膜，并对此工艺下制备的氧化铪薄膜进行了光学性质、残余应力、结构特性以及激光损伤特性的研究。实验结果表明，用双离子束溅射沉积的氧化铪薄膜不仅结构均匀,膜层致密,无定形结构，而且具有极低的散射和吸收,均匀的非晶结构,杂质缺陷少,激光损伤阈值高。     

脉冲激光沉积法制备的ZnO薄膜的低阈值电抽运紫外随机激射

分别采用直流反应溅射法和脉冲激光沉积法在硅衬底上沉积ZnO薄膜, 用X射线衍射、扫描电镜、光致发光谱等手段对两种方法沉积的ZnO薄膜的结晶状态、 表面形貌和光致发光等进行了表征. 进一步对比研究了以上述两种方法制备的ZnO薄膜作为发光层的金属-绝缘体-半导体结构器件的电抽运紫外随机激射. 结果表明, 与以溅射法制备的ZnO薄膜作为发光层的器件相比, 以脉冲激光沉积法制备的ZnO薄膜为发光层的器件具有更低的紫外光随机激射阈值电流和更高的输出光功率. 这是由于脉冲激光沉积法制备的ZnO薄膜中的缺陷更少, 从而显著地减少了紫外光在光散射过程中的光损耗. 关键词： 随机激射 ZnO薄膜 脉冲激光沉积 溅射     

磁控反应溅射法制备渐变折射率薄膜的模型分析

阐述了磁控反应溅射法制备渐变折射率薄膜的机理;探讨了磁控反应溅射法制备渐变折射率薄膜的理论模型,给出了渐变折射率薄膜的折射率与反应气体分压的关系,在一定的沉积参数下,由要得到的膜层折射率随膜层几何厚度的变化规律可推导出反应气体分压比随时间的变化规律;最后以制备折射率线性变化的薄膜为例说明了如何推导得到反应气体分压比随时间的变化规律. 关键词： 渐变折射率 磁控反应溅射 模型     

氘在碳钨共沉积层中的滞留行为研究

运用射频磁控溅射方法, 在氘氩混合气氛中制备了含氘碳钨共沉积薄膜. 利用离子束分析方法[卢瑟福背散射(RBS)和弹性反冲(ERD)]对薄膜样品的厚度、成分、 氘含量等进行了分析; 利用拉曼光谱和扫描电子显微镜(SEM), 分别分析了薄膜的结构和表面形态. 离子束分析发现, 氘原子更易被碳原子俘获位俘获, 并且氘含量会随着沉积温度的升高而降低; 其他镀膜条件固定的情况下, 不同混合气体压强下薄膜样品中的氘浓度在5.0 Pa处有一个峰值; 拉曼光谱分析显示, 沉积温度从室温升高到725 K时, 碳钨共沉积层中的类石墨化成分增加, 同时, 非晶化的程度也加剧; 扫描电子显微镜图像表明, 随着温度的升高薄膜表面被腐蚀的痕迹消失, 但是由于应力的改变表面出现了多处的凸起. 关键词： 氘滞留 碳钨共沉积 射频磁控溅射     

电子束、离子辅助和离子束溅射三种工艺对光学薄膜性能的影响

 运用电子束、离子辅助和离子束溅射三种镀膜工艺分别制备光学薄膜，包括单层氧化物薄膜和增透膜，然后采取一系列测试手段，如Zygo轮廓仪、原子力显微镜、表面热透镜技术和X射线衍射等技术，来分析和研究不同的工艺对这些薄膜性能的不同影响，以判断合理的沉积工艺。     

射频磁控溅射法制备ZnS多晶薄膜及其性质

实验采用射频磁控溅射法在玻璃衬底上沉积了ZnS多晶薄膜,研究了沉积气压、退火温度和衬底温度对ZnS薄膜质量的影响.利用X射线衍射(XRD)分析了薄膜的微结构,并计算了内应力值.通过紫外-可见光分光光度计测量了薄膜的透过谱,计算了Urbach能量和禁带宽度.利用扫描电子显微镜(SEM)观察了薄膜的表面形貌.结果表明: 衬底温度为室温时沉积的ZnS薄膜具有较大的压应力,并且内应力值随着工作气压增大而增大,在300 ℃下进行退火处理后内应力松弛,衬底温度为350 ℃时制备的ZnS薄膜内应力小,透过率高,经300 ℃退火处理后结晶质量有所提高. 关键词： ZnS薄膜 射频磁控溅射 内应力     

电子束、离子辅助和离子束溅射三种工艺对光学薄膜性能的影响

运用电子束、离子辅助和离子束溅射三种镀膜工艺分别制备光学薄膜,包括单层氧化物薄膜和增透膜,然后采取一系列测试手段,如Zygo轮廓仪、原子力显微镜、表面热透镜技术和X射线衍射等技术,来分析和研究不同的工艺对这些薄膜性能的不同影响,以判断合理的沉积工艺。     

Study of nanocrystalline V02 thin films prepared by magnetron sputtering and post-oxidation

Nanocrystalline VO2 thin films were deposited onto glass slides by direct current magnetron sputtering and postoxidation. These films undergo semiconductor-metal transition at 70 ℃, accompanied by a resistance drop of two magnitude orders. The crystal structures and surface morphologies of the VO2 films were characterized by x-ray diffraction （XRD） and atomic force microscope （AFM）, respectively. Results reveal that the average grain size of VO2 nanograins measured by XRD is smaller than those measured by AFM. In addition, Raman characterization indicates that stoichiometric VO2 and oxygen-rich VO2 phases coexist in the films, which is supported by x-ray photoelectron spectroscopy （XPS） results. Finally, the optical properties of the VO2 films in UV-visible range were also evaluated. The optical band gap corresponding to 2p-3d inter-band transition was deduced according to the transmission and reflection spectra. And the deduced value, Eopt2p-3d ： 1.81 eV, is in good agreement with that previously obtained by theoretical calculation.     

Surface oxidation of vanadium dioxide films prepared by radio frequency magnetron sputtering

This paper reports that the thermochromic vanadium dioxide films were deposited on various transparent substrates by radio frequency magnetron sputtering, and then aged under circumstance for years. Samples were characterized with several different techniques such as x-ray diffraction, x-ray photoelectron spectroscopy, and Raman, when they were fresh from sputter chamber and aged after years, respectively, in order to determine their structure and composition. It finds that a small amount of sodium occurred on the surface of vanadium dioxide films, which was probably due to sodium ion diffusion from soda-lime glass when sputtering was performed at high substrate temperature. It also finds that aging for years significantly affected the nonstoichiometry of vanadium dioxide films, thus inducing much change in Raman modes.     

非平衡磁控溅射法类金刚石薄膜的制备及分析

利用非平衡磁控溅射物理气相沉积技术制备了光滑、致密、均匀的类金刚石薄膜.分析沉积工艺参数对所得类金刚石薄膜的电学特性的影响以及溅射粒子的大小、能量、碰撞及沉积过程中的相变机理后认为：溅射粒子越小、与环境气体分子的碰撞次数越多、与衬底相互作用时具有适当动量等，能够有效提高薄膜中sp^３杂化碳原子的含量.利用拉曼光谱 、纳米力学探针、红外光谱、扫描电镜等分析了所得类金刚石膜的结构、力学及光学性能、 表面形貌等特征.结果表明，类金刚石膜中sp^３杂化碳原子的含量较高，显微硬 度大于11GPa，薄膜光学透过率达到89.4％，折射系数为1.952，沉积速率为0.724μm/h，表 面光滑、致密、均匀，不存在明显的晶粒特征. 关键词： 非平衡磁控溅射 类金刚石膜 拉曼光谱 红外光谱     

Study of nanocrystalline VO2 thin films prepared by magnetron sputtering and post-oxidation

Nanocrystalline VO2 thin films were deposited onto glass slides by direct current magnetron sputtering and postoxidation. These films undergo semiconductor-metal transition at 70°C, accompanied by a resistance drop of two magnitude orders. The crystal structures and surface morphologies of the VO2 films were characterized by x-ray diffraction (XRD) and atomic force microscope (AFM), respectively. Results reveal that the average grain size of VO2 nanograins measured by XRD is smaller than those measured by AFM. In addition, Raman characterization indicates that stoichiometric VO2 and oxygen-rich VO2 phases coexist in the films, which is supported by x-ray photoelectron spectroscopy (XPS) results. Finally, the optical properties of the VO2 films in UV-visible range were also evaluated. The optical band gap corresponding to 2p-3d inter-band transition was deduced according to the transmission and reflection spectra. And the deduced value, E opt2p-3d = 1.81 eV, is in good agreement with that previously obtained by theoretical calculation.     

The properties of transparent conducting molybdenum-doped ZnO films grown by radio frequency magnetron sputtering

Transparent conducting molybdenum-doped zinc oxide films are prepared by radio frequency(RF) magnetron sputtering at ambient temperature.The MoO3 content in the target varies from 0 to 5 wt%,and each film is polycrystalline with a hexagonal structure and a preferred orientation along the c axis.The resistivity first decreases and then increases with the increase in MoO3 content.The lowest resistivity achieved is 9.2 × 10-4.cm,with a high Hall mobility of 30 cm2.V-1.s-1 and a carrier concentration of 2.3×1020 cm-3 at an MoO3 content of 2 wt%.The average transmittance in the visible range is reduced from 91% to 80% with the increase in the MoO3 content in the target.     

常温溅射DLC膜的工艺研究

常温下,采用磁控溅射技术成功地在Ge基底上制备了类金刚石膜,并研究了溅射功率、碳氢气体与氩气流量比、溅射频率、基底负偏压等工艺参数对类金刚石膜沉积速率的影响和薄膜的光学性能。结果表明：溅射功率、溅射频率、碳氢气体与氩气流量比对沉积速率有显著的影响。沉积速率随着溅射功率的增大而增大,随着溅射频率的减小而增大。随着碳氢气体与氩气流量比、基底负偏压的增大沉积速率先增大后降低。制备的类金刚石膜具有较宽的光谱透明区,Ge基底单面沉积的类金刚石膜其峰值透过率最高达到63．99％。     

直流磁控溅射制备氧化钒薄膜

讨论了在低温下以高纯金属钒作靶材,用直流磁控溅射的方法制备出了氧化钒薄膜。通过设计正交试验,分析了氩气和氧气的流量比,溅射功率,工作压强,基底温度对氧化钒薄膜沉积速率和电阻温度系数TCR的影响,采用RTP-500型快速热处理机对氧化钒薄膜样品进行了退火热处理,实验结果表明:当Ar与O2的比例为100:4,溅射功率为120W,工作压强为2Pa时,所获得薄膜TCR较大,都在-2%/K附近,最高的可达-3.6%/K。     

Influence of deposition temperature on the crystallinity of Al-doped ZnO thin films at glass substrates prepared by RF magnetron sputtering method

Al-doped ZnO (AZO) transparent conducting films were successfully prepared on glass substrates by RF magnetron sputtering method under different substrate temperatures. The microstructural, electrical and optical properties of AZO films were investigated in a wide temperature range from room temperature up to 350 °C by X-ray Diffraction (XRD), Field-Emission Scanning Electron Microscopy (FESEM), High-Resolution Transmission Electron Microscopy (HRTEM), Hall measurement, and UV–visible meter. The nature of AZO films is polycrystalline thin films with hexagonal wurtzite structure and a preferred orientation along c-axis. The crystallinity and surface morphologies of the films are strongly dependent on the growth temperature, which in turn exerts a great effect on microstructural, electrical and optical properties of the AZO films. The atomic arrangement of AZO film having an wurtzite structure was indeed identified by the HRTEM as well as the Selected Area Electron Diffraction (SAED). The defect density of AZO film was investigated by HRTEM. The film deposited at 100 °C exhibited the relatively well crystallinity and the lowest resistivity of 3.6 × 10⁻⁴ Ω cm. The average transmission of AZO films in the visible range is all over 85%. More importantly, the low-resistance and high-transmittance AZO film was also prepared at a low temperature of 100 °C.     

Characterization and properties Ti-Al-Si-N nanocomposite coatings prepared by middle frequency magnetron sputtering

TiN-containing amorphous Ti-Al-Si-N (nc-TiN/a-Si₃N₄ or a-AlN) nanocomposite coatings were deposited by using a modified closed field twin unbalanced magnetron sputtering system which is arc assisted and consists of two circles of targets, at a substrate temperature of 300 °C. XRD, XPS and High-resolution TEM experiments showed that the coatings contain TiN nanocrystals embedded in the amorphous Si₃N₄ or AlN matrix. The coatings exhibit good mechanical properties that are greatly influenced by the Si contents. The hardness of the Ti-Al-Si-N coatings deposited at Si targets currents of 5, 8, 10, and 12 A were 45, 47, 54 and 46 GPa, respectively. The high hardness of the deposited Ti-Al-Si-N coatings may be own to the plastic distortion and dislocation blocking by the nanocrystalline structure. On the other hand, the friction coefficient decreases monotonously with increasing Si contents. This result would be caused by tribo-chemical reactions, which often take place in many ceramics, e.g. Si₃N₄ reacts with H₂O to produce SiO₂ or Si(OH)₂ tribolay-layer.