Dielectric and Ferroelectric Properties of Sol-Gel Derived YMnO3 Films

There has been considerable interest in ferroelectric (FE) films especially for non-volatile memories and ultra high density DRAM applications. Such FE films typically consist of lead zirconate titanate (PZT) with novel oxide contacts, or layered perovskite such as Sr2Bi2TaO9. Recently, there have been reports of sputtered YMnO3 films which exhibit a single polarization axis and do not contain any volatile species of Pb or Bi. Single crystal YMnO3 exhibits satisfactory polarization (6 C/cm2) and low coercive field (<20 kV/cm). Additionally, the dielectric constant of YMnO3 is quite low (<30) which should facilitate ferroelectric switching. In this study, sol-gel derived YMnO3 films were prepared on platinized Si wafers and their dielectric and ferroelectric properties were characterized. Their electrical properties will be discussed with respect to Y/Mn stoichiometry ratio, hexagonal phase development and processing conditions. The potential of YMnO3 as a material in non-volatile memories is evaluated.     

SrBi2Nb2O9 Ferroelectric Powders and Thin Films Prepared by Sol-Gel

Pure SrBi2Nb2O9 powders and thin films were obtained using sol-gel synthesis from mixtures of niobium ethoxide, bismuth and strontium 2-ethylhexanoates. Powders crystallized for 2 hours at 700°C had grain sizes of about 100–150 nm. SrBi2Nb2O9 thin films were prepared by spin-coating a stable precursor solution onto Si/SiO2/TiO2/Pt substrates. Crystallization of pure SrBi2Nb2O9 phase occurred at about 500–550°C. Randomly oriented 0.3 m-thick crack-free films were obtained after 10 successive depositions and heating at 700°C for 2 hours. P-E hysteresis loops have confirmed the ferroelectric behavior of the films: they show a remanent polarization of 2.5 C/cm2 (5 V, 8 ms). No fatigue was observed up to 109 full switchings.     

Chemistry-Crystallization-Microstructure Relations of Sol-Gel Derived Lanthanum Modified Lead Titanate Thin Films

Lanthanum modified lead titanate thin films have been obtained by the deposition of sol-gel solutions onto platinized (100) silicon substrates. Crystallization of perovskite films was achieved by thermal treatments at 650°C with slow or rapid heatings. Lead oxide excesses were used in the precursor solutions to counterbalance the lead losses produced during the thermal treatment. Rapid heatings and large excesses of lead produce a preferred orientation of the films. These films have more homogeneous and denser microstructures than slow heated films without lead excess.     

Preparation and Characterization of Molybdenum Oxide Thin Films by Sol-Gel Process

This paper presents a new sol-gel process to prepare molybdenum oxide thin films. A molybdenum acetylacetonate sol was prepared by employing the system CH₃COCH₂COCH₃/MoO₃/C₆H₅CH₃/HOCH₂CH₂OCH₃. A molybdenum acetylacetonate gel was prepared by addition of aqueous NH₃. Thermal gravimetry (TG) and differential thermal analyses (DTA) of the gel suggested that crystallization of MoO₃ occurs in a 140 K temperature range around 508°C. MoO₃ films were prepared on fused silica, Si (111) and Al₂O₃ (012) substrates by annealing spin coating films of the sol in oxygen environment at 508°C. X-ray diffraction (XRD) showed that all films crystallize in -MoO₃ structure, and crystallites on fused silica substrate are arbitrarily oriented while those on Si (111) and Al₂O₃(012) substrates oriented in the (010) direction. SEM investigations showed that MoO₃ grains of all films are randomly distributed, with a longitudinal dimension of about 1–5 m and the film thickness is about 1 m.     

溶胶-凝胶法制备的Y_2O_3薄膜的光波导性质研究

用醋酸钇溶解于甲氧基乙醇的溶胶 凝胶法制备了Y2 O3光波导薄膜。通过二乙烯三胺的络合作用 ,获得了均匀和稳定的前驱液 ,并用浸渍提拉法得到了薄膜。差热分析、红外吸收光谱被用来表征Y2 O3凝胶和粉末。用XRD、扫描电子显微镜、m线法和波导荧光光谱法研究了Y2 O3光波导薄膜的结构和光波导性质。结果表明 ,Y2 O3薄膜对于光活性掺杂是一种很好的基质材料 ,预示Y2 O3薄膜在光电子方面具有巨大的应用前景。     

Sol-Gel Preparation of α-Fe2O3 Thin Films: Structural Characterization by XAFS and Raman

Films of Fe2O3 have been prepared by two different sol-gel syntheses, starting from inorganic salts as precursors, Fe(NO3)3 · 9H2O or FeCl3 · 6H2O. Differences in the local order between the two preparations are investigated by XAFS (X-Ray Absorption Fine Structure) and Raman measurements.     

Preparation and Dielectric Properties of YMnO3 Ferroelectric Thin Films by the Sol-Gel Method

Thin films of YMnO3 are proposed as a new candidate for non-volatile ferroelectric memory devices. They were prepared via solutions through two different processes: thermal decomposition and reflux using yttrium acetate tetrahydrate and manganese acetate tetrahydrate as starting materials. For coatings prepared by thermal decomposition process, the starting materials were dissolved in ethanol containing diethanolamine, and single phase YMnO3 was obtained with heat-treatment at 900°C. When the starting materials were refluxed using 2-ethoxyethanol as a solvent, single phase YMnO3 was obtained with heat-treatment at 800°C. Scanning electron microscopy showed that the 300 nm thick films with a stoichiometric Y/Mn ratio had many pinholes, and a very large dielectric loss, 0.83 at 100 kHz. Inclusion of 5–10% excess of Y in the coating solution produced dense structures with improved dielectric properties. The dielectric constant and loss tangent of the thin films with Y/Mn ratio of 1.00/0.90 were about 20 and 0.05 at 100 kHz, respectively.     

Sol-Gel Preparation and Characterization of Ag-TiO2 Nanocomposite Thin Films

Ag-TiO₂ thin films were prepared with a sol-gel route, using titanium isopropoxide and silver nitrate as precursors, at 0.03 and 0.06 Ag/Ti nominal atomic ratios. After drying at 80°C, the films were fired at 300°C and 500°C for 30 min. The films were analysed by X-ray diffraction (XRD) with glancing angle, and X-ray photoelectron spectroscopy (XPS), with depth profiling of the concentration. XPS analysis showed the presence of C and N as impurities in the nanocomposite films. Their concentration decreased with increasing the firing temperature. Chemical state analysis showed that Ag was present in metallic state, except for the very outer layer where it was present as Ag⁺. For the films prepared with a Ag/Ti concentration of 0.06, depth profiling measurements of the film fired at 300°C showed a strong Ag enrichment at the outer surface, while composition remained almost constant within the rest of the film, at 0.019. For the films heated to 500°C, two layers were found, where the Ag/Ti ratios were 0.015 near the surface and 0.026 near the substrate.     

Preparation and Characterization of (Ba,Ca)(Ti,Zr)O3 Thin Films Through Sol-Gel Processing

(Ba_0.92,Ca_0.08)(Ti_0.92,Zr_0.08)O₃ thin films were prepared from Ba-Ti and Ca-Zr precursors by sol-gel processing. Polymerizable solutions containing Ba-Ti and Ca-Zr, respectively, were newly synthesized. Decomposition of the starting compounds and crystallization behavior of the film were examined by using TG/DTA and XRD. Microstructure of thin films was observed by using SEM. Polycrystalline (Ba_0.92,Ca_0.08)(Ti_0.92, Zr_0.08)O₃ films obtained by firing at 800°C were dense with fine grains. The thin films showed a dielectric constant of 1200 and dielectric loss of 0.5%.     

Sol-Gel Derived Barium-Strontium Titanate Films

Sol-gel techniques for the preparation of barium-strontium titanate (BST) films are discussed. The evolution of film microstructure during heat treatment, and the dielectric properties of BST films prepared from alkoxide solutions and from alkoxide solutions modified by 2-ethylhexanoic acid were studied. It is shown that the extent of the modification of the precursors by 2-ethylhexanoic acid changes the precursor molecular complexity governing the microstructure of the films and their electrical properties.     

Photocatalytic Activity and Characterization of the Sol-Gel Derived Pb-Doped TiO2 Thin Films

Photocatalytically active Pb-doped TiO₂ thin films were prepared on a soda-lime glass substrate by sol-gel dip-coating technique using TiO₂ sols containing lead(II) nitrate. The thin films were characterized by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), UV-VIS spectroscopy and X-ray diffraction (XRD). A shift of the UV-VIS absorption towards longer wavelengths was observed, which indicated a decrease in the band-gap of TiO₂ upon Pb doping. XRD results showed both pure and Pb-doped TiO₂ thin films were polycrystalline, anatase type, and oriented predominantly to the (101) plane. A slight shift in the d-spacing for the Pb-doped film indicated the incorporation of Pb into the TiO₂ lattice to form Pb _x Ti_1–x O₂ solid solution. AFM results showed Pb-doped TiO₂ thin films were composed of larger TiO₂ particles and had rougher surface, compared with un-doped TiO₂ thin films. XPS results showed that except for the enrichment of Pb near the surface, Pb exists in the forms of Pb _x Ti_1–x O₂ and PbO. Dimethyl-2,2-dichlorovinyl phosphate (DDVP) was efficiently degraded in the presence of the Pb-doped TiO₂ thin films by exposing the insecticide solution to sunlight. The mechanism of photocatalytic activity enhancement of the Pb-doped TiO₂ thin films was discussed.     

Orientation and Surface Properties of Sol-Gel Derived Y2O3 Films

The orientation, surface and optical properties of sol-gel derived Y₂O₃ films have been investigated. Transparent Y₂O₃ films were prepared on quartz glass substrates by sol-gel processes using YCl₃·6H₂O as a starting material. The water droplet contact angles of the films reached constant values between 79° and 90° after the films were left for 8 to 10 days in air at ambient temperature, indicating that the film surface exhibited hydrophobicity. When 2-(2-methoxyethoxy)ethanol (MEE) was added to the sol, yttria in the films crystallized to a strongly oriented cubic phase at firing temperatures between 400°C and 500°C. The intensity of the XRD peaks increased as the firing temperature was increased to 900°C. However, yttria crystallized to a non-oriented cubic phase when MEE was not used. The refractive index and packing density of the Y₂O₃ films increased from 1.55 to 1.68 and from 0.67 to 0.79, respectively, as the firing temperature was raised from 400°C to 900°C, indicating that sol-gel derived Y₂O₃ films are lower in density than evaporated ones.     

Properties and Photoelectrocatalytic Behaviour of Sol-Gel Derived TiO2 Thin Films

Titanium dioxide (TiO₂) thin films have been prepared on indium doped tin oxide (ITO) glass by sol-gel dip-coating method. Properties of the films were determined as a function of heat-treatment by X-ray diffraction, scanning electron microscopy and photoelectrochemical tests. The films heat-treated at higher temperatures show better crystallinity and photoresponse. The microscopic structure on the film after heat-treatment is attributed to the incorporation of organic polymer into the precursor solution. The performance of the electrodes treated at different temperature on photoelectrocatalytic degradation of methyl orange was investigated. The effect of applied potential and the ability of the electrode to be repeatedly used in photoelectrocatalytic degradation were also evaluated.     

Sol-Gel Derived Bismuth Titanate Thin Films with c-Axis Orientation

Bismuth titanate (Bi₄Ti₃O₁₂), a member of the layered perovskite family, has a unique set of ferroelectric properties, which include a high remanent polarization, low coercive field, and high Curie temperature, that make it a possible candidate for data storage applications. For this investigation, bismuth titanate, or BiT, films were fabricated via sol-gel method to examine the effect of processing on phase development and orientation. Solutions were deposited onto platinized silicon, and then heat treated for one hour at temperatures ranging from 550°C to 700°C in 100% O₂. It was found that c-axis orientated BiT films could be formed at temperatures as low as 550°C by using bismuth oxide template layers, while films without bismuth oxide templating possessed a random orientation over the same temperature range.     

Preparation and Properties of Highly Oriented Sr0.3Ba0.7Nb2O6 Thin Films by a Sol-Gel Process

We succeeded in the preparation of epitaxial or highly oriented strontium-barium niobate (Sr_0.3Ba_0.7Nb₂O₆) thin film by a sol-gel process. A homogeneous coating solution was prepared with Sr and Ba acetates and Nb(OEt)₅ as raw materials, and acetic acid and diethylene glycol monomethyl ether as solvents. Sr_0.3Ba_0.7Nb₂O₆ film sintered at 900°C on MgO(1 0 0) was oriented with c-axis perpendicular to the substrate surface. Sr_0.3Ba_0.7Nb₂O₆ film sintered at 700°C on SrTiO₃(1 0 0) was an epitaxial and oriented with c-axis in parallel to the substrate surface. Transmittance of Sr_0.3Ba_0.7Nb₂O₆ film (film thickness: 144 nm) was more than 60% at the range from 400 to 800 nm. Refractive index was 2.33 at 633 nm. Dielectric constant and dielectric loss of the Sr_0.3Ba_0.7Nb₂O₆ thin films prepared on polycrystal Pt substrates were 600 and 0.06 at room temperature and 1 kHz, respectively. The curie temperature (T_c) of polycrystalline Sr_0.3Ba_0.7Nb₂O₆ thin films was about 200°C. At room temperature and 50 kHz, remanent polarization (P_r) and coercive field (E_c) of the polycrystalline thin films were 1.79 C/cm² and 2.69 kV/cm, respectively.     

溶胶-凝胶法制备SrBi2Ta2O9铁电陶瓷薄膜

溶胶-凝胶法制备SrBi2Ta2O9铁电陶瓷薄膜     

Preparation and Characterization of MgO Thin Films by a Novel Sol-Gel Method

MgO thin films have been prepared on Si substrates by a novel and simple sol-gel method using magnesium nitrate and collodion as starting material. Solutions consisting of magnesium nitrate in a mixture of collodion and ethanol were spin-coated onto silicon substrates. It was found that collodion was a necessary component to form stable sols and the crystallization and structures were clearly dependent on the amount of the collodion and the annealing temperature. The MgO thin films with good crystallization were obtained after annealing at 800°C. Meanwhile, the microstructure of the MgO films was examined by transmission electron microscopy and atomic force microscopy.     

Spectroellipsometric Characterization of Multilayer Sol-Gel Fe2O3 Films

Multilayer Fe₂O₃ films were deposited by the sol-gel method on glass substrates using three successive deposition procedures. The films were thermally treated for 1 h at 300°C.The optical and microstructural properties of these films were investigated by spectroscopic ellipsometry (SE) in the 500–1000 nm range. The optical gap was found by fitting the dispersion of the film refractive index (n) with the Wemple-DiDomenico (WDD) formula.The ellipsometric measurements showed also that the Fe₂O₃ films are anisotropic. The birefringence values (n) of the sol-gel films (0.05–0.08) are smaller than the large values of the Fe₂O₃ (which are around 0.28) but increase with the crystalization of the films. AFM mesurements showed that the films treated at 300°C start to crystallize.     

Gd2O3:Eu3+ X射线溶胶-凝胶发光薄膜的制备与表征

高分辨率X射线成像系统要求其发光材料同时具有X射线截止本领强、光产额高、余辉短以及与光电器件波长匹配好等特性. Gd2O3:Eu3 因其优越的发光性能和Eu3 红光发射等优点而在高能射线激发发光材料中占有重要地位. 近几年发展起来的透明X射线薄膜发光材料具有更高的衬度和空间分辨率、热传导率、均匀性和附着力等优点[1], 因而有望成为取代传统荧光粉的新一代X射线成像材料. 在各种薄膜制备工艺中, 溶胶-凝胶法以其价格低廉、工艺简单、制备温度低、均匀性好、可实现微量掺杂等优点而日益受到人们重视, 通过该方法并辅以适当的后处理工艺可制备出透明、致密的薄膜.     

纳米Au-TiO2复合薄膜的溶胶-凝胶法制备、表征和性能

用溶胶-凝胶法制备了纳米Au-TiO₂复合薄膜.X射线衍射、X射线光电子能谱、原子力显微镜、紫外-可见光谱及摩擦磨损实验研究表明,复合薄膜均匀致密,Au以纳米晶粒形式均匀、不连续分散镶嵌于TiO₂基体中,纳米Au粒径为14～25nm;复合薄膜在可见光区有较强的吸收,吸收峰位置和强度与烧结温度和金的添加量有关;复合薄膜具有良好的抗磨减摩性能,在1N负荷下,摩尔分数为5%的Au-TiO₂薄膜的摩擦系数仅为0.09～0.10,耐磨寿命多于2000滑动周次.