强脉冲离子束辐照金属材料烧蚀产物特性分析

强脉冲离子束作为一种闪光热源在材料表面改性方面具有广泛的应用.烧蚀效应对于强脉冲离子束与物质相互作用以及强脉冲离子束薄膜沉积过程具有重要的影响.因此,分析强脉冲离子束的烧蚀过程和机理对于优化其应用具有重要意义.为了研究强脉冲离子束的烧蚀产物特性,采用1.2—1.5 J/cm~2的强脉冲离子束辐照纯锌靶材,并使用单晶硅片收集辐照过程中产生的烧蚀产物.通过扫描电子显微镜、能谱仪和高精度天平的分析与测量,得到了烧蚀产物的表面形貌和相关特性等实验结果.结合实验和有限元模拟计算得到的材料表面温度场分布演化结果,可以证明在强脉冲离子束辐照锌靶材的烧蚀过程中会有气态、液态和固态三种不同状态的烧蚀产物产生.     

纳秒脉冲激光沉积薄膜过程中的烧蚀特性研究

研究了高能短脉冲激光薄膜制备的整个烧蚀过程.首先建立了基于超热理论的烧蚀模型，然 后利用较为符合实际的高斯分布表示脉冲激光输入能量密度，给出了考虑蒸发效应不同阶段 的烧蚀状态方程.结合适当的边界条件，以Si靶材为例，利用有限差分法得到了靶材在各个 阶段温度随时间和烧蚀深度的演化分布规律及表面蒸发速度与烧蚀深度在不同激光辐照强度 下随时间的演化规律.结果表明，在脉冲激光辐照阶段，靶材表面的蒸发效应使得靶材表面 温度上升显著放缓；在激光辐照强度接近相爆炸能量阈值时，蒸发速度与蒸发厚度的变化由 于逆流现象将显著放缓.还得到了考虑了熔融弛豫时间及蒸发效应的固-液界面随时间的演化 方程，这一结论较先前工作更具有普适性. 关键词： 脉冲激光烧蚀 热流方程 温度演化 有限差分法     

烧蚀对强脉冲离子束在高分子材料中能量沉积的影响

高能量密度纳秒量级强脉冲离子束辐照材料表面的烧蚀产物和束流的相互作用,可能对束流在靶中的能量沉积产生影响,进而影响烧蚀情况下的束流分析和相关应用的优化.本文采用红外成像方法对横截面能量密度1.5—1.8 J/cm~2的强脉冲离子束在304不锈钢和高分子材料上的能量沉积进行了测量分析.结果表明在高分子材料上,在超过一定能量密度后,束流引发材料表面烧蚀产物的屏蔽效应使得大部分束流能量不能沉积在靶上.采用有限元方法对束流引发的温度场分布进行了计算,验证了高分子材料的低热导率以及低分解温度使其在脉冲辐照早期即开始热解,烧蚀产物对后续束流能量的进一步沉积产生屏蔽.此类效应在金属上存在的可能性和对束流诊断等应用的影响,亦进行了讨论.     

强流脉冲离子束辐照混合双层靶的Monte Carlo模拟

采用Monte Carlo方法模拟强流脉冲离子束与铝基钛膜双层靶的相互作用.强流脉冲离子束与双层靶材相互作用过程中,随着离子的注入,高能离子束引起涂层原子与基体材料原子之间相互渗透和混合,同时离子能量沉积到靶材内一定深度,并呈规律性的空间分布.这种能量分布影响靶内两种材料的熔化或气化过程,并导致界面物质结合强度发生变化.利用建立的束流模型,计算束流在靶材内的能量沉积和分布状况及界面处级联碰撞对双层靶界面混合区的影响,得出强流脉冲离子束混合双层靶时级联碰撞不起主要作用的结论,离子流密度在100A·cm^-2~150A·cm^-2时对离子束混合最为有利.     

强流脉冲离子束与靶作用域值的研究

结合Monte Carlo 方法和热力学方法，建立了脉冲离子束能量模型以及靶材相变温度模型. 利用该模型可以确定产生喷发等离子体的域值，得到强流脉冲离子束与靶材作用过程中靶材 温度的变化规律以及形成喷发等离子体的初始温度. 关键词： 强流脉冲离子束 靶 域值 数值研究     

强流辐照钛合金表面特征的原子力显微研究

利用原子力显微术的轻敲模式(TM-AFM),并采用形貌与相位同时成像技术对强流脉冲离子束(IPIB)辐照前后试样表面进行了系统标征,得到了试样表面的高度像及相位像的衬度.分析结果表明:在高流强密度、多次脉冲条件下,IPIB辐照可使试样表面变得光滑化,从相位像中可以定性分析出辐照后表面硬度也得到一定程度的提高.     

长脉冲激光辐照LY—12铝靶烧蚀表面的后退速度

用烧穿靶法测量自由振荡长脉冲 1.06μm会聚激光束烧蚀LY-12铝合金靶时间,用电子微量天平、金相显微仪、收集器等测量激光烧蚀铝靶材参量Am和h的技术,给出激光束烧蚀铝靶的烧蚀表面后退速度和烧蚀速度的结果。当烧蚀靶材的激光通量I=10~5～10~7W/cm~2时,烧蚀表面后退速度为0.5～3.8m/s,烧蚀速度为 1～8g/s。     

高斯与平顶光束纳秒脉冲激光物质蒸发烧蚀动力学仿真研究

基于建立的纳秒脉冲激光与金属铝相互作用的二维轴对称模型,仿真研究了光束整形对纳秒脉冲激光烧蚀金属铝过程中蒸发烧蚀动力学的影响.结果表明:等离子体屏蔽对靶材的烧蚀特性具有显著影响,屏蔽效应主要体现在脉冲的中后期.对于3种激光轮廓,高斯光束的屏蔽效果最强,随着整形后的平顶光束直径的增大,屏蔽效果逐渐减弱.平顶光束与高斯光束作用下,靶材温度的二维空间分布较为不同.高斯光束作用时,靶材中心最先升温,随后温度沿径向和轴向扩散.由于平顶光束的能量分布更加均匀,因此一定径向范围内的靶材同时升温.光束整形对靶材的蒸发烧蚀动力学影响较大.对于高斯光束,靶材中心先烧蚀,随后产生径向烧蚀.由于整形后平顶光束的能量密度降低,因此靶面蒸发时间较高斯光束延后,并且一定径向范围内的靶材同时发生蒸发烧蚀.3种激光轮廓下,靶材的蒸发烧蚀形貌与光束的强度分布类似,其中高斯光束的烧蚀坑呈中间深两边浅的特点,平顶光束的烧蚀坑较为平坦.     

强流脉冲离子束辐照靶及其喷发的数值研究

利用拟合实测的TEMP Ⅱ型加速器磁绝缘二极管(MID)电压波形及其焦点附近束流密度曲线，建立了Gaussian分布模型，据此计算了与靶作用的离子的能量及数量，采用Monte Carlo(MC)方法计算了沉积在靶内的能量.并以此作为热源，与流体动力学(HD)模型相结合，对不同的靶状态采用相应的状态方程，模拟计算了靶内压力演化情况; 同时对烧蚀产生的等离子体采用理想气体状态方程, 结合HD方程组, 模拟计算了喷发过程中压力的空间演化过程. 关键词： 强流脉冲离子束 Gaussian模型 HD方程 数值研究     

高功率离子束辐照膜基双层靶温度场的数值研究

采用TRIM程序模拟高功率离子束与铝基钛膜双层靶的相互作用.计算了束流在靶材内的能量沉积及分布情况,并以此沉积能量为热源项,采用有限差分方法求解非线性热传导方程,得到了温度场的分布规律,分析了不同离子流密度对界面物质状态的影响.结果表明,离子束电流密度在100—200 A/cm²之间取值时,脉冲结束后界面处两种物质均达到熔融状态.     

Two-dimensional numerical research on effects of titanium target bombarded by TEMPⅡ accelerator

Two-dimensional numerical research has been carried out on the ablation effects of titanium target irradiated by intense pulsed ion beam (IPIB) generated by TEMP II accelerator. Temporal and spatial evolution of the ablation process of the target during a pulse time has been simulated. We have come to the conclusion that the melting and evaporating process begin from the surface and the target is ablated layer by layer when the target is irradiated by the IPIB. Meanwhile, we also obtained the result that the average ablation velocity in target central region is about 10\,m/s, which is far less than the ejection velocity of the plume plasma formed by irradiation. Different effects have been compared to the different ratio of the ions and different energy density of IPIB while the target is irradiated by pulsed beams.     

Numerical Simulation on Expansion Process of Ablation Plasma Induced by Intense Pulsed Ion Beam

We present a one-dimensional time-dependent numerical model for the expansion process of ablation plasma induced by intense pulsed ion beam （IPIB）. The evolutions of density, velocity, temperature, and pressure of the ablation plasma of the aluminium target are obtained. The numerical results are well in agreement with the relative experimental data. It is shown that the expansion process of ablation plasma induced by IPIB includes strongly nonlinear effects and that shock waves appear during the propagation of the ablation plasma.     

强流脉冲离子束辐照双层靶能量沉积的数值模拟

利用拟合实验测得的TEMP Ⅱ型加速器磁绝缘二极管电压波形及其焦点附近束流密度曲线,建立了Gauss分布模型.采用Monte Carlo方法研究了强流脉冲离子束与铝材镀有不同厚度金膜的双层靶(金膜与铝材合称为双层靶)之间的相互作用,模拟了能量沉积的演化过程和随不同金膜厚度的变化情况.对脉冲离子束强化薄膜粘结性进行了探讨. 关键词： 强流脉冲离子束 双层靶 能量沉积 Monte Carlo方法     

Propagation of Plasma Generated by Intense Pulsed Ion Beam Irradiation

Taking the calculation results based on the established two-dimensional ablation model of the intense-pulsed-ionbeam （IPIB） irradiation process as initial conditions, we build a two-dimensional hydrodynamic ejection model of plasma produced by an IPIB-irradiated metal titanium target into ambient gas. We obtain the conclusions that shock waves generate when the background pressure is around 133 mTorr and also obtain the plume splitting phenomenon that has been observed in the experiments.     

强流脉冲离子束能量密度分布的红外诊断

强流脉冲离子束在靶上的能量密度分布是其研究和应用的一个重要参数。为了解决现有束流能量密度诊断方法的不足,利用红外成像仪测量靶背面的温度分布,从而建立了强流脉冲离子束能量密度分布的红外诊断方法。对能量密度1J/cm2量级、脉冲宽度为102 ns量级的束流,该方法测量误差好于5%,空间分辨率可达到1~2mm,具有操作简便、成本低的优点,是强脉冲能量沉积分布的一种高效迅速的诊断方法。     

强脉冲离子束辐照薄金属靶的热力学过程研究

在回顾和总结现有强脉冲离子束诊断技术和能量沉积模型的基础上, 结合红外成像诊断分析, 基于能量平衡, 提出了强脉冲离子束在固体靶中功率密度分布模型, 并采用蒙特卡罗方法对其进行计算. 以该功率密度模型作为源项, 使用有限元分析方法模拟强脉冲离子束入射100 μm不锈钢靶后内部温度场在毫秒时间范围内的分布和演化. 结果显示, 在微秒时间范围内, 热场以存在于近表面区域数倍于离子射程范围内的冲击热场为主要特征; 而在毫秒时间范围内, 靶的前后表面(纵向)已达到温度平衡, 且靶后表面温度场和入射前表面的离子束横截面能量密度具有空间分布的相似性. 这证明了, 在采用具有毫秒响应速度的红外拍摄系统的情况下, 背面红外诊断技术可以实现以较高的精度对强脉冲离子束横截面的能量分布进行诊断和分析.     

Nanosecond pulsed laser ablation of silicon in liquids

Laser fluence and laser shot number are important parameters for pulse laser based micromachining of silicon in liquids. This paper presents laser-induced ablation of silicon in liquids of the dimethyl sulfoxide (DMSO) and the water at different applied laser fluence levels and laser shot numbers. The experimental results are conducted using 15 ns pulsed laser irradiation at 532 nm. The silicon surface morphology of the irradiated spots has an appearance as one can see in porous formation. The surface morphology exhibits a large number of cavities which indicates as bubble nucleation sites. The observed surface morphology shows that the explosive melt expulsion could be a dominant process for the laser ablation of silicon in liquids using nanosecond pulsed laser irradiation at 532 nm. Silicon surface’s ablated diameter growth was measured at different applied laser fluences and shot numbers in both liquid interfaces. A theoretical analysis suggested investigating silicon surface etching in liquid by intense multiple nanosecond laser pulses. It has been assumed that the nanosecond pulsed laser-induced silicon surface modification is due to the process of explosive melt expulsion under the action of the confined plasma-induced pressure or shock wave trapped between the silicon target and the overlying liquid. This analysis allows us to determine the effective lateral interaction zone of ablated solid target related to nanosecond pulsed laser illumination. The theoretical analysis is found in excellent agreement with the experimental measurements of silicon ablated diameter growth in the DMSO and the water interfaces. Multiple-shot laser ablation threshold of silicon is determined. Pulsed energy accumulation model is used to obtain the single-shot ablation threshold of silicon. The smaller ablation threshold value is found in the DMSO, and the incubation effect is also found to be absent.     

Vaporization and Plasma Shielding during High Power Nanosecond Laser Ablation of Silicon and Nickel

A thermal model to describe the high-power nanosecond pulsed laser ablation is presented. It involves the vaporization and the following plasma shielding effect on the whole ablation process. As an example of Si target, we obtainthe time evolution of the calculated surface temperature, ablation rate and ablation depth. It can be seen that plasma shielding plays a more important role in the ablation process with time. At the same time, the ablation depth with laser fluence based on different models is shown. Moreover, we simulate the pulsed laser irradiation Ni target. The evolution of the transmitted intensity and the variation of ablation depth per pulse with laser fluence are performed. Under the same experimental conditions, the numerical results calculated with our thermal model are more in agreement with the experimental data.