STM study of successive Ge growth on “V”-stripe patterned Si (0 0 1) surfaces at different growth temperatures

The self-assembly process of Ge islands on patterned Si (0 0 1) substrates is investigated using scanning tunneling microscopy. The substrate patterns consist of one-dimensional stripes with “V”-shaped geometry and sidewalls inclined by an angle of 9° to the (0 0 1) surface. Onto these stripes, Ge is deposited in a step-wise manner at different temperatures from 520 °C to 650 °C. At low temperature, the Ge first grows nearly conformally over the patterned surface but at about 3 monolayers a strong surface roughening due to reconstruction of the surface ridges as well as side wall ripple formation occurs. At 600 °C, a similar roughening takes place, but Ge accumulates within the grooves such that at a critical thickness of 4.5 monolayers, 3D islands are formed at the bottom of the grooves. This accumulation process is enhanced at 650 °C growth, so that the island formation starts about 1 monolayers earlier. At 600 and 650 °C, all islands are all aligned at the bottom of the stripes, whereas at 550 °C Ge island form preferentially on top of ridges. The experimental observations are explained by the strong temperature dependence of Ge diffusion over the patterned surface.     

Hydrogen adsorption on GaAs(0 0 1)-c(4 × 4)

Exposure of the As-terminated GaAs(0 0 1)-c(4 × 4) reconstructed surface to atomic hydrogen (H) at different substrate temperatures (50-480 °C) has been studied by reflection high-energy electron diffraction (RHEED) and scanning tunnelling microscopy (STM). Hydrogen exposure at low temperatures (∼50 °C) produces a disordered (1 × 1) surface covered with AsH_x clusters. At higher temperatures (150-400 °C) exposure to hydrogen leads to the formation of mixed c(2 × 2) and c(4 × 2) surface domains with H adsorbed on surface Ga atoms that are exposed due to the H induced loss of As from the surface. At the highest temperature (480 °C) a disordered (2 × 4) reconstruction is formed due to thermal desorption of As from the surface. The results are consistent with the loss of As from the surface, either through direct thermal desorption or as a result of the desorption of volatile compounds which form after reaction with H.     

Corrosion behavior of sputtered Cr-Si-Ni and Cr-Si-Ni-Al resistive films in 0.1 M NaOH

The corrosion behavior of magnetron sputtered Cr-Si-Ni and Cr-Si-Ni-Al resistive films had been investigated by means of the relative resistance change (ΔR/R), polarization measurements, AES, and SEM in 0.1 M NaOH solution at 25 °C and 50 °C, which simulated an alkaline environment. The results revealed that both the annealed Cr-Si-Ni and Cr-Si-Ni-Al films in Ar ambient exhibited good corrosion resistance and long-term reliability in 0.1 M NaOH solution at 25 °C, due to the formation of a protective oxide layer on the surface of two types of the films during corrosion. However, the corrosion properties of two types of the films became degraded rapidly with the solution temperature at 50 °C. The studies showed that the pro-formation of a protective oxide layer on the surface of two types of the films by annealing in air had an enhancing effect on the corrosion properties of the films in 0.1 M NaOH solution at 50 °C, and that Cr-Si-Ni-Al films by annealing in air had more improving effect on the corrosion resistance and long-term reliability than Cr-Si-Ni films.     

High resolution X-ray photoelectron spectroscopy study on initial oxidation of 4H-SiC(0 0 0 1)-(√3 × √3)R30° surface

An initial oxidation dynamics of 4H-SiC(0 0 0 1)-(√3 × √3)R30° surface has been studied using high resolution X-ray photoelectron spectroscopy and supersonic molecular beams. Clean 4H-SiC(0 0 0 1)-(√3 × √3)R30° surface was exposed to oxygen molecules with translational energy of 0.5 eV at 300 K. In the first step of initial oxidation, oxygen molecules are immediately dissociated and atomic oxygens are inserted into Si-Si back bonds to form stable oxide species. At this stage, drastic increase in growth rate of stable oxide species by heating molecular beam source to 1400 K was found. We concluded that this increase in growth rate of stable oxide is mainly caused by molecular vibrational excitation. It suggests that the dissociation barrier is located in the exit channel on potential energy hypersurface. A metastable molecular oxygen species was found to be adsorbed on a Si-adatom that has two oxygen atoms inserted into the back bonds. The adsorption of the metastable species is neither enhanced nor suppressed by molecular vibrational excitation.     

The effect of post-annealing on surface acoustic wave devices based on ZnO thin films prepared by magnetron sputtering

Zinc oxide (ZnO) thin films were deposited on unheated silicon substrates via radio frequency (RF) magnetron sputtering, and the post-deposition annealing of the ZnO thin films was performed at 400 °C, 600 °C, 800 °C, and 1000 °C. The characteristics of the thin films were investigated by X-ray diffractometry (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The films were then used to fabricate surface acoustic wave (SAW) resonators. The effects of post-annealing on the SAW devices are discussed in this work. Resulting in the 600 °C is determined as optimal annealing temperature for SAW devices. At 400 °C, the microvoids exit between the grains yield large root mean square (RMS) surface roughness and higher insertion losses in SAW devices. The highest RMS surface roughness, crack and residual stress cause a reduction of surface velocity (about 40 m/s) and increase dramatically insertion loss at 1000 °C. The SAW devices response becomes very weak at this temperature, the electromechanical coupling coefficient (k²) of ZnO film decrease from 3.8% at 600 °C to 1.49% at 1000 °C.     

Simplified method to prepare atomically-ordered TiO2(1 1 0)-(1 × 1) surfaces with steps and terraces

An effective way to prepare atomically-ordered rutile TiO₂(1 1 0) surfaces that have distinct step and terrace structures suitable for oxide thin film deposition is demonstrated. Only a two-step procedure, consisting of 20% HF etching and UHV-annealing at 1100 °C, was required to yield a clean (1 × 1) structure with step and terrace structures. Investigation of the surface using scanning tunneling microscopy, low-energy electron diffraction, and Auger electron spectroscopy reveals that carbon contamination is removed at around 800 °C, and straight steps with clear terraces appear at around 1000 °C.     

Nitric acid oxidation of Si (NAOS) method for low temperature fabrication of SiO2/Si and SiO2/SiC structures

We have developed low temperature formation methods of SiO₂/Si and SiO₂/SiC structures by use of nitric acid, i.e., nitric acid oxidation of Si (or SiC) (NAOS) methods. By use of the azeotropic NAOS method (i.e., immersion in 68 wt% HNO₃ aqueous solutions at 120 °C), an ultrathin (i.e., 1.3-1.4 nm) SiO₂ layer with a low leakage current density can be formed on Si. The leakage current density can be further decreased by post-metallization anneal (PMA) at 200 °C in hydrogen atmosphere, and consequently the leakage current density at the gate bias voltage of 1 V becomes 1/4-1/20 of that of an ultrathin (i.e., 1.5 nm) thermal oxide layer usually formed at temperatures between 800 and 900 °C. The low leakage current density is attributable to (i) low interface state density, (ii) low SiO₂ gap-state density, and (iii) high band discontinuity energy at the SiO₂/Si interface arising from the high atomic density of the NAOS SiO₂ layer.For the formation of a relatively thick (i.e., ≥10 nm) SiO₂ layer, we have developed the two-step NAOS method in which the initial and subsequent oxidation is performed by immersion in ∼40 wt% HNO₃ and azeotropic HNO₃ aqueous solutions, respectively. In this case, the SiO₂ formation rate does not depend on the Si surface orientation. Using the two-step NAOS method, a uniform thickness SiO₂ layer can be formed even on the rough surface of poly-crystalline Si thin films. The atomic density of the two-step NAOS SiO₂ layer is slightly higher than that for thermal oxide. When PMA at 250 °C in hydrogen is performed on the two-step NAOS SiO₂ layer, the current-voltage and capacitance-voltage characteristics become as good as those for thermal oxide formed at 900 °C.A relatively thick (i.e., ≥10 nm) SiO₂ layer can also be formed on SiC at 120 °C by use of the two-step NAOS method. With no treatment before the NAOS method, the leakage current density is very high, but by heat treatment at 400 °C in pure hydrogen, the leakage current density is decreased by approximately seven orders of magnitude. The hydrogen treatment greatly smoothens the SiC surface, and the subsequent NAOS method results in the formation of an atomically smooth SiO₂/SiC interface and a uniform thickness SiO₂.     

Au island growth on a Si(1 1 1) vicinal surface

Au island nucleation and growth on a Si(1 1 1) 7 × 7 vicinal surface was studied by means of scanning tunneling microscopy. The surface was prepared to have a regular array of step bunches. Growth temperature and Au coverage were varied in the 255-430 °C substrate temperature range and from 1 to 7 monolayers, respectively. Two kinds of islands are observed on the surface: Au-Si reconstructed islands on the terraces and three-dimensional (3D) islands along the step bunches. Focusing on the latter, the dependence of island density, size and position on substrate temperature and on Au coverage is investigated. At 340 °C and above, hemispherical 3D islands nucleate systematically on the step edges.     

Dissolution behaviour of the barrier layer of porous oxide films on aluminum formed in phosphoric acid studied by a re-anodizing technique

Chemical dissolution of the barrier layer of porous oxide films formed on aluminum foil (99.5% purity) in the 4% phosphoric acid after immersion in 2 mol dm⁻³ sulphuric acid at 50 °C has been studied. The barrier layer thickness before and after dissolution was determined using a re-anodizing technique. A digital voltmeter with a computer system was used to record the change in the anode potential with re-anodizing time. It has been found that the barrier layer material may consist of two or three regions according to the dissolution rate. The barrier oxide contains two layers at 35 V: the outer layer with the highest dissolution rate and the inner layer with low dissolution rate. The barrier oxide contains three layers at 40 V and above it: the outer layer with high dissolution rate, the middle layer with the highest dissolution rate and the inner layer with low dissolution rate. It has been shown that there is a dependence of the dissolution rate on the surface charge of anodic oxide film. Annealing of porous alumina films for 1 h at 200 °C leads to disappearance of layers with different dissolution rates in the barrier oxide. We explained this phenomenon by the absence of the space charge in the barrier oxide of such films.     

Preparation and characterization of boron nitride coatings on carbon fibers from borazine by chemical vapor deposition

Boron nitride (BN) coatings were deposited on carbon fibers by chemical vapor deposition (CVD) using borazine as single source precursor. The deposited coatings were characterized by scanning electron microscopy (SEM), Auger electron spectroscopy (AES), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and Raman spectroscopy. The effect of temperatures on growth kinetics, morphology, composition and structure of the coatings was investigated. In the low temperature range of 900 °C-1000 °C, the growth rate increased with increasing temperature complying with Arrhenius law, and an apparent active energy of 72 kJ/mol was calculated. The coating surface was smooth and compact, and the coatings uniformly deposited on individual fibers of carbon fiber bundles. The growth was controlled by surface reaction. At 1000 °C, the deposition rate reached a maximum (2.5 μm/h). At the same time, the limiting step of the growth translated to be mass-transportation. Above 1100 °C, the growth rate decreased drastically due to the occurrence of gas-phase nucleation. Moreover, the coating surface became loose and rough. Composition and structure examinations revealed that stoichiometric BN coatings with turbostratic structure were obtained below 1000 °C, while hexagonal BN coatings were deposited above 1100 °C. A penetration of carbon element from the fibers to the coatings was observed.     

Surface treatments toward obtaining clean GaN(0 0 0 1) from commercial hydride vapor phase epitaxy and metal-organic chemical vapor deposition substrates in ultrahigh vacuum

We studied processes of cleaning GaN(0 0 0 1) surfaces on four different types of wafers: two types were hydride vapor phase epitaxy (HVPE) free-standing substrates and two types were metal-organic chemical vapor deposition (MOCVD) films grown on these HVPE substrates and prepared by annealing and/or Ar ion sputtering in ultra high vacuum. We observed the surfaces through treatments using in situ low-energy electron diffraction (LEED), reflection high-energy electron diffraction (RHEED), scanning tunneling microscopy (STM), and Auger electron spectroscopy, and also using ex situ temperature programmed desorption, X-ray photoelectron spectroscopy, X-ray diffraction, and secondary ion mass spectrometry. For HVPE samples, we obtained relatively clean surfaces under optimized three-step annealing conditions (200 °C for 12 h + 400 °C for 1 h + 500 °C for 5 min) without sputtering, after which the surface contamination of oxide and carbide was reduced to ∼20% of that before annealing. Clear GaN(0 0 0 1)1×1 patterns were obtained by LEED and RHEED. STM images showed flat terraces of ∼10 nm size and steps of ∼0.5 nm height. Upon annealing the HVPE-GaN samples at a much higher temperature (C), three-dimensional (3D) islands with facets were formed and the surface stoichiometry was broken down with the desorption of nitrogen in the form of ammonia, since the samples include hydrogen as an impurity. Ar⁺ sputtering was effective for removing surface contamination, however, postannealing could not recover the surface roughness but promoted the formation of 3D islands on the surface. For MOCVD/HVPE homoepitaxial samples, the surfaces are terminated by hydrogen and the as-introduced samples showed a clear 1×1 structure. Upon annealing at 500-600 °C, the surface hydrogen was removed and a 3×3 reconstruction structure partially appeared, although a 1×1 structure was dominant. We summarize the structure differences among the samples under the same treatment and clarify the effect of crystal quality, such as dislocations, the concentration of hydrogen impurities, and the residual reactant molecules in GaN films, on the surface structure.     

Structure and homoepitaxial growth of GaAs(6 3 1)

We have studied the surface atomic structure of GaAs(6 3 1), and the GaAs growth by molecular beam epitaxy (MBE) on this plane. After the oxide desorption process at 585 °C reflection high-energy electron diffraction (RHEED) showed along the [−1 2 0] direction a 2× surface reconstruction for GaAs(6 3 1)A, and a 1× pattern was observed for GaAs(6 3 1)B. By annealing the substrates for 60 min, we observed that on the A surface appeared small hilly-like features, while on GaAs(6 3 1)B surface pits were formed. For GaAs(6 3 1)A, 500 nm-thick GaAs layers were grown at 585 °C. The atomic force microscopy (AFM) images at the end of growth showed the self-formation of nanoscale structures with a pyramidal shape enlarged along the [5−9−3] direction. Transversal views of the bulk-truncated GaAs(6 3 1) surface model showed arrays of atomic grooves along this direction, which could influence the formation of the pyramidal structures.     

Carbon dioxide-activated carbons from almond tree pruning: Preparation and characterization

Activated carbons were prepared from almond tree pruning by non-catalytic and catalytic gasification with carbon dioxide and their surface characteristics were investigated. In both series a two-stage activation procedure (pyrolysis at 800 °C in nitrogen atmosphere, followed by carbon dioxide activation) was used for the production of activated samples. In non-catalytic gasification, the effect of the temperature (650-800 °C for 1 h) and the reaction time (1-12 h at 650 °C) on the surface characteristics of the prepared samples was investigated. Carbons were characterized by means of nitrogen adsorption isotherms at 77 K. The textural parameters of the carbons present a linear relation with the conversion degree until a value of approximately 40%, when they come independent from both parameters studied. The highest surface area obtained for this series was 840 m² g⁻¹. In the catalytic gasification the effect of the addition of one catalyst (K and Co) and the gasification time (2-4 h) on the surface and porosity development of the carbons was also studied. At the same conditions, Co leads to higher conversion values than K but this last gives a better porosity development.     

Surface characterization of Pd/Ag23 wt% membranes after different thermal treatments

Hydrogen permeation measurements of 1.5-10 μm thick Pd/Ag23 wt% membranes before and after thermal treatments at 300 °C in air (both sides) or in the temperature range 300-450 °C in N₂ (feed side) and Ar (permeate side) were performed. Accompanying changes in surface topography and chemical composition were subsequently investigated by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) depth profiling. For a 2 μm thick membrane, the surface roughness increased for all annealing temperatures applied, while a temperature of 450 °C was required for an increase in roughness of both membrane surfaces to occur for the 5 μm membrane. The thickest membrane, of 10 μm, showed changed surface roughness on one side of the membrane only and a slight decrease in hydrogen permeance after all heat treatments in N₂/Ar. X-ray photoelectron spectroscopy investigations performed after treatment and subsequent permeation measurements revealed segregation of silver to the membrane surfaces for all annealing temperatures applied. In comparison, heat treatment at 300 °C in air resulted in significantly increased hydrogen permeance accompanied by increasing surface roughness. Upon exposure to oxygen, Pd segregates to the surface to form a 2-3 nm thick oxide layer (PdO), with more complex segregation behavior after subsequent reduction and permeance measurements in pure hydrogen. The available permeance data for the Pd/Ag23 wt% membranes after heat treatment in air at 300 °C is found to depend linearly on the inverse membrane thickness, implying bulk limited hydrogen permeation for thicknesses down to 1.5-2.0 μm.     

Surface morphology and optical properties of ZnO epilayers grown on Si(1 1 1) by metal organic chemical vapor deposition

Heteroepitaxial ZnO epilayers were grown on Si(1 1 1) substrates using a vertical geometry atmospheric pressure metal organic chemical vapor deposition (AP-MOCVD) system. The growth temperature was varied from 550 °C to 650 °C in steps of 25 °C. The ZnO growth rate and surface morphology were strong functions of the growth temperature and ranged from ∼0.16 μm/h to 1.36 μm/h. The surface morphology of the ZnO films changed from granular to sharp tips as the growth temperature increased. The effect of buffer thickness was also examined, and was found to have a strong effect on the optical properties of the ZnO. An optimized growth condition for ZnO epilayers was found at 625 °C, producing a FWHM in the room temperature photoluminescence (PL) spectrum of 4.5 nm and a preferred growth orientation along the (0 0 2) direction.Transmission electron microscopy images and selected area diffraction patterns showed excellent crystalline quality of both the buffer and ZnO overlayer. When non-optimized growth temperatures were employed, post-growth annealing was found to greatly enhance the ratio of band-edge to deep level emission.     

Evolution of steel surface composition with heating in vacuum and in air

X-ray photoelectron spectroscopy (XPS) has been used to investigate the changes in surface composition of three steels as they have undergone heating. The steels were mild steel, and two austenitic stainless steels, commonly designated 304 and 316 stainless steels. XPS measurements were made on the untreated samples, and then following heating for 30 min in vacuo and in a 1 × 10⁻⁶ Torr partial pressure of air, at temperatures between 100 °C and 600 °C.Mild steel behaves differently to the two stainless steels under the heating conditions. In mild steel the iron content of the surface increased, with oxygen and carbon decreasing, as a function of increasing temperature. The chemical state of the iron also changed from oxide at low temperatures, to metallic at temperatures above 450 °C.In both stainless steels the amount of iron present in the surface decreased with increasing temperature. The decrease in iron at the surface was accompanied by an increase in the amount of chromium at the steel surface. At temperatures above 450 °C the iron in both 304 and 316 stainless steels showed significant contributions from metallic iron, whilst the chromium present was in an oxide state. In 316 stainless steel heated to 600 °C there was some metallic chromium present in the surface layer.The surfaces heated in air showed the least variation in composition, with the major change being the loss of carbon from the surfaces following heating above 300 °C. There was also a minor increase in the concentration of chromium present on both the stainless steels heated under these conditions. There was also little change in the oxidation state of the iron and chromium present on the surface of these steels. There was some evidence of the thickening of the surface oxides as seen by the loss of the lower binding energy signal in the iron or chromium core level scans.The surfaces heated in vacuum showed a similar trend in the concentration of carbon on the surfaces, however the overall concentration of oxygen decreased throughout the heating of these steels. There were also significant changes in the oxidation state of the iron and chromium on these surfaces with significant amounts or iron and chromium present in the metallic form following heating up to 600 °C.It appears that the carbon contamination on the surfaces plays an important role in the fate of the surface oxide layer for all of the steels heated in a vacuum environment.     

Surface structures of K on Mo(1 1 0) surface investigated by RHEED

Phase transitions of K on Mo(1 1 0) have been studied by RHEED technique. As Ba and Cs structures on the bcc(1 1 0) surface, surface structures of K were hexagonal from RT to 250 °C for θ > 0.9 ML. The hexagonal structure successively expanded from α to γ structure with Nishiyama-Wassermamm (N-W) orientation relationship. The nearest neighbor spacing in the α structure at RT was 4.50 Å, which is very closed to the atomic distance of K in metal, and stretched to 5.14 Å in the γ structure at T = 200 °C. At temperatures greater than T = 250 °C, the γ structure oriented in N-W and Kurdjumov-Sachs (K-S) relationships at the same time and stayed up to the temperature of 450 °C. These two orientations of γ structure also appeared in all temperature range for 0.4 < θ < 0.9 ML.     

A low temperature surface preparation method for STM nano-lithography on Si(1 0 0)

Registration markers are crucial in connecting scanning tunneling microscope (STM) lithographed nano- and atomic-scale devices to the outside world. In this paper we revisit an ultra high vacuum annealing method with a low thermal budget that is fully compatible with etched registration markers and results in clean 2 × 1 reconstructed Si(1 0 0) surfaces required for STM lithography. Surface contamination is prevented by chemically stripping and reforming a protective silicon oxide layer before transferring the sample to the vacuum system. This allows for annealing temperatures of only 900 °C, where normally carbon contaminants result in the formation of SiC clusters on the surface at annealing temperatures below 950 °C. Reactive ion etched marker structures with an etch depth of 60 nm and a typical lateral dimension of only 150 nm survive a 900 °C flash anneal.     

STM and XPS characterisation of vacuum annealed nanocrystalline WO3 films

Scanning tunnelling microscopy and X-ray Photoelectron Spectroscopy were conducted on magnetron sputtered WO₃ thin films, following a sequence of ultra high vacuum anneals from 100 °C to 900 °C. Annealing from 100 °C to 400 °C induced an upward surface band bending of about 0.3 eV, attributed to the oxygen migration from the bulk to the surface, but no changes in the surface topography. Chemical changes occurred from 600 °C to 800 °C, associated with the formation of secondary oxide species. STM imaging showed that the film surface consists of amorphous particles 35 nm in size up to 600 °C, while higher temperatures resulted in an increase in particle size. Crystallisation of the nanoparticles started to occur after annealing at 600 °C. The implications in terms of gas sensing are discussed.     

SR-PES and STM observation of metastable chemisorption state of oxygen on Si(1 1 0)-16 × 2 surface

Initial adsorption of oxygen molecules on the Si(1 1 0)-16 × 2 surface and subsequent modification of the bonding states induced by mild (300 °C) annealing have been studied by synchrotron-radiation photoemission spectroscopy and scanning-tunneling microscopy. It has been shown that upon annealing, the intensity and the energy positions of the Si 2p suboxide components shift towards the values characteristic for the thermal oxide. This indicates the presence of a metastable chemisorption state of oxygen on the Si(1 1 0)-16 × 2 surface.