Nanopowders of ferroic oxides for magnetoelectric composites

Piezoelectric oxides are currently being considered in combination with magnetic materials for the development of magnetoelectric composites, in which stress transfer across the interface is a key issue. In this context, we report here a detailed study of the mechanochemical activation processes of the ferroelectric perovskite BiScO₃–PbTiO₃ and of the ferrimagnetic spinel NiFe₂O₄. Highly sinterable, single-phase nanopowders of both ferroic oxides are synthesised, and used for the preparation of high-density materials and two-phase composites by hot pressing. Emphasis is put on studying chemical reactions at and interdiffusion across the interface between the two phases using high spatial resolution techniques such as micro X-ray diffraction and piezoresponse force microscopy. The feasibility of preparing magnetoelectric composites by this approach is demonstrated, for which the necessity of controlling physicochemical processes at the interface is key to obtain functionality.     

Multilayer x-ray mirrors based on W/B 4 C with ultrashort (d = 0.7–1.5 nm) periods

A method using resonance diffuse x-ray scattering has been developed to investigate the properties of multilayer structures composed of ultrathin films. Multilayer structures W/B ₄ C with ultra-short periods (d=0.7–1.5 nm) have been studied using specular and diffuse x-ray scattering. The contributions of the interface roughness and the mixing of the layer materials to the total width of the transition region between the layers have been separated for these structures. Quasi-Bragg peaks in the diffuse scattering spectra have been observed experimentally, and their analysis has shown that the interface roughnesses in multilayer W/B ₄ C structures are correlated well.     

Multiferroic RMnO3 thin films

Multiferroic materials have received an astonishing attention in the last decades due to expectations that potential coupling between distinct ferroic orders could inspire new applications and new device concepts. As a result, a new knowledge on coupling mechanisms and materials science has dramatically emerged. Multiferroic RMnO₃ perovskites are central to this progress, providing a suitable platform to tailor spin–spin and spin–lattice interactions.With views towards applications, the development of thin films of multiferroic materials have also progressed enormously and nowadays thin-film manganites are available, with properties mimicking those of bulk compounds. Here we review achievements on the growth of hexagonal and orthorhombic RMnO₃ epitaxial thin films and the characterization of their magnetic and ferroelectric properties, we discuss some challenging issues, and we suggest some guidelines for future research and developments.     

Second-order ferroic properties of a Pb5Ge3O11 uniaxial ferroelectric

The ferrobielastic properties (ferroic properties of the second order) earlier theoretically predicted for lead germanate uniaxial ferroelectric crystals are justified experimentally. It is demonstrated that single-domain samples are formed upon cooling to temperatures below the Curie point under uniaxial mechanical stresses corresponding to a combination of mechanical stresses σ₁₁σ₁₃ or σ₂₂σ₂₃. The macroscopic mechanism of this phenomenon is considered.     

Effect of Pb2Ru2O7-x (PRO) conductive interfacial layers on ferroelectric properties of Pt/Pb(Zr0.35Ti0.65)O3/Pt capacitors for nonvolatile memory applications

A conductive material, Pb₂Ru₂O_7-x (PRO), containing Pb in a cubic structure was introduced into a Pt/PZT interface in an attempt to improve the ferroelectric properties of PZT films. PRO and PZT films were prepared by rf magnetron sputtering and chemical solution deposition, respectively. The resistivity of PRO thin films in a hybrid-type electrode (PRO/Pt) structure was approximately 35–45 μΩ·cm and the surface roughness remained constant with increasing annealing temperature. The PRO interlayers suppressed the loss of Pb in PZT layers by diffusion to the Pt/PZT interface. The increase in remanent polarization was largely dependent on the PRO interlayers inserted at the bottom-Pt/PZT interface rather than at the top-Pt/PZT interface. In addition, the leakage-current behavior of PZT films in a sandwich structure was improved substantially compared to the case of PRO interlayers only at the bottom-Pt/PZT interface. Thus, the PRO interlayers play an important role in improving the ferroelectric properties of PZT thin films for use in nonvolatile memory device applications. PACS 68.55.-a; 73.40.Rw; 73.61.Ng; 77.55.+f; 81.15.Cd     

Investigation on preparation and physical properties of nanocrystalline Si/SiO2 superlattices for Si-based light-emitting devices

Structures containing silicon nanocrystals (nc-Si) are very promising for Si-based light-emitting devices. Using a technology compatible with that of silicon, a broader wavelength range of the emitted photoluminescence (PL) was obtained with nc-Si/SiO₂ multilayer structures. The main characteristic of these structures is that both layers are light emitters. In this study we report results on a series of nc-Si/SiO₂ multilayer periods deposited on 200 nm thermal oxide SiO₂/Si substrate. Each period contains around 10 nm silicon thin films obtained by low-pressure chemical vapour deposition at T=625°C and 100 nmSiO₂ obtained by atmospheric pressure chemical vapour deposition T=400°C. Optical and microstructural properties of the multilayer structures have been studied by spectroscopic ellipsometry (using the Bruggemann effective medium approximation model for multilayer and multicomponent films), FTIR and UV–visible reflectance spectroscopy. IR spectroscopy revealed the presence of SiO_x structural entities in each nc-Si/SiO₂ interface. Investigation of the PL spectra (using continuous wave-CW 325 nm and pulsed 266 nm laser excitation) has shown several peaks at 1.7, 2, 2.3, 2.7, 3.2 and 3.7 eV, associated with the PL centres in SiO₂, nc-Si and Si–SiO₂ interface. Their contribution to the PL spectra depends on the number of layers in the stack.     

Specific features of the magnetoresistance in multilayer systems of magnetic nanoislands in weak magnetic fields

New magnetic structures such as multilayer systems of magnetic nanoislands being alternating layers of nanoislands of various magnets have been proposed. The electric, magnetic, and magnetooptical properties of the systems have been studied. The magnetoresistance of ～2% related to the anisotropic effect has been revealed. In multilayer structures of magnetic nanoislands, a unidirectional axis of predominant magnetization has been found, which changes its orientation depending on the structure parameters. The magnetic field required to reorient the axis in the opposite direction has been estimated to be 2 kOe < H _A < 20 kOe. The periodic multilayer structures of magnetic nanoislands are very sensitive to hyperweak magnetic fields (to 10^?6 Oe).     

Role of electrodes materials in determining the interfacial and magnetoelectric properties in BaTiO<Subscript>3</Subscript>-based multiferroic tunnel junctions

Using the first-principles calculations based on density functional theory, the important role of electrode materials in determining the interfacial, ferroelectric stability and magnetoelectric properties in BaTiO₃-based multiferroic tunnel junctions (MFTJs) have been investigated comparatively. It is found that the SrO–TiO₂ interface of MFTJs with oxide electrode SrRuO₃ is the most favorable interfacial structure. The average ferroelectric polarizations of MFTJs with electrode Co, FeCo and SrRuO₃ are 25, 36 and 0 μC/cm², respectively. The using of alloy electrode FeCo is more contributed to ferroelectric stability and the enhancement of magnetoelectric coupling of BaTiO₃-based MFTJs. We expect our findings can provide an essential evaluation for the selection of electrode materials in spintronic storage devices.     

Fundamental studies of molecular depth profiling and 3D imaging using Langmuir-Blodgett films as a model

Molecular depth profiling and three-dimensional imaging using cluster projectiles and SIMS have become a prominent tool for organic and biological materials characterization. To further explore the fundamental features of cluster bombardment of organic materials, especially depth resolution and differential sputtering, we have developed a reproducible and robust model system consisting of Langmuir-Blodgett (LB) multilayer films. Molecular depth profiles were acquired, using a 40-keV C₆₀⁺ probe, with LB films chemically alternating between barium arachidate and barium dimyristoyl phosphatidate. The chemical structures were successfully resolved as a function of depth. The molecular ion signals were better preserved when the experiment was performed under cryogenic conditions than at room temperature. A novel method was used to convert the scale of fluence into depth which facilitated quantitative measurement of the interface width. Furthermore, the LB films were imaged as a function of depth. The reconstruction of the SIMS images correctly represented the original chemical structure of the film. It also provided useful information about interface mixing and edge effects during sputtering.     

Ferroic phase transitions in β-LiNH4SO4

Abstract

The paper reviews the results of experimental and theoretical studies of ferroic phase transitions in β-LiNH₄SO₄ and its deuterated analogue. β-LiNH₄SO₄ undergoes succesive phase transitions: a paraelectric - ferroelectric phase transition at T₁ ? 462 K, a ferroelectric - ferroelastic phase transition at T₂ ? 283 K and a transition from one ferroelastic phase to the other at T₃ ? 28 K. Attention is focused on the influence of the order of phase transitions on the pattern of ferroelectric and ferroelastic domain structure, and also on the role played by the dynamics of molecular groups in the mechanism of transitions. The pre-transition effect connected with the ferroelectric-paraelectric transition: heterophase, capable of accounting for anomalies in different physical properties present 1-3 K below T₁ is shown. The anomalous temperature variation of spontaneous polarisation of the crystal is discussed within the framework of the phenomenological model of weak ferroelectrics.     

Toward Quantum Paraelectric,Paraelastic, and Paramagnetic 2D Materials

Quantum fluctuations are known to affect the finite-temperature properties of materials made out of light elements such as hydrogen and helium. More recently, it has also been realized that quantum effects may play a role on structural transformations of ferroic materials containing heavier atoms, provided the energy barrier separating two different phases is small when compared to thermal fluctuations. Herein, 2D ferroelectric and ferroelastic materials are showcased as potential candidates to experience quantum effects on their structural conformation at liquid helium temperatures. A brief literature overview of the path integral molecular dynamics approach, which could be useful for the discovery of quantum paraelectric, paraelastic, and paramagnetic behavior in 2D materials, is also provided.     

Improvement of metal–ferroelectric–silicon structures without buffer layers between Si and ferroelectric films

Si-based metal–ferroelectric–semiconductor (MFS) structures without buffer layers between Si and ferroelectric films have been developed by depositing SrBi₂Ta₂O₉ (SBT) directly on n-type (100)-oriented Si. Some effective processes are adopted to improve the electrical properties of these MFS structures. Contrary to the conventional MFS structures with top electrodes directly on ferroelectrics, our MFS structures have been developed with thin dense SiO₂ films deposited between ferroelectric films and top electrodes. Due to the SiO₂ films, the leakage current densities of MFS structures are reduced to 2×10^-8 A/cm² under the bias of 5 V. The C-V electrical properties of the MFS structures are greatly improved after annealing at 400 °C in N₂ ambient for 1 h. The C-V memory windows are increased to 3 V, which probably results from the decrease of the interface trap density at the Si/SBT interface. Received: 7 September 1999 / Accepted: 24 November 1999 / Published online: 2 August 2000     

ToF-SIMS study of growth behavior in all-nanoparticle multilayer films using a novel indicator layer

All-nanoparticle multilayer films found novel applications in the areas of photonics, catalysis, sensors, and biomaterials. The assembly of nanoparticles into conformal and uniform films with precise control over chemical and physical properties poses a significant challenge. Using time-of-flight secondary ion mass spectrometry (ToF-SIMS), we have investigated the growth behavior in all-nanoparticle multilayer films using a novel indicator layer. The all-nanoparticle multilayer films were prepared by dipping the polyester substrate with electrostatic charges alternatively into solutions containing three different types of nanoparticles (TiO₂, Al₂O₃, and SiO₂). Upon the deposition of each layer, ToF-SIMS was employed to determine the surface chemical composition of intermediate products. The intermixing extent of TiO₂ indicator layer was used to reveal the stratification of each layer. Combining with zeta-potential measurements, the solvation and deposition of the under-layer species in the aqueous environment during fresh layer formation was proposed as a plausible cause for mutilayers not stratified into well-defined layers but displaying a nonlinear growth behavior.     

Electromechanical properties of lanthanum-doped lead hafnate titanate thin films for integrated piezoelectric MEMS applications

This paper focuses on the deposition and electromechanical characterization of lanthanum-doped lead hafnate titanate (PLHT) thin films as key material in piezoelectric microelectromechanical systems (pMEMS). PLHT (x/30/70) and PLHT(x/45/55) films with a thickness between 150 nm and 250 nm were deposited by chemical solution deposition (CSD). Thereby x varies between 0 and 10% La content. The electrical characterization shows that undoped (x=0) PLHT exhibit ferroelectric behavior similar to PZT of the same composition. La doping results in reduced ferroelectric properties and also affects the electromechanical properties. Measurements using a double beam laser interferometer yield a piezoelectric coefficient d ₃₃ of 60 pm/V, which stays constant with an increasing electric field. This leads to a linear displacement compared to undoped PLHT or conventional PZT films used for MEMS applications.     

Model multilayer structures for three-dimensional cell imaging

The prospects for SIMS three-dimensional analysis of biological materials were explored using model multilayer structures. The samples were analyzed in a ToF-SIMS spectrometer equipped with a 20 keV buckminsterfullerene (C₆₀⁺) ion source. Molecular depth information was acquired using a C₆₀⁺ ion beam to etch through the multilayer structures at specified time intervals. Subsequent to each individual erosion cycle, static SIMS spectra were recorded using a pulsed C₆₀⁺ ion probe. Molecular intensities in sequential mass spectra were monitored as a function of primary ion fluence. The resulting depth information was used to characterize C₆₀⁺ bombardment of biological materials. Specifically, molecular depth profile studies involving dehydrated dipalmitoyl-phosphatidylcholine (DPPC) organic films indicate that cell membrane lipid materials do not experience significant chemical damage when bombarded with C₆₀⁺ ion fluences greater than 10¹⁵ ions/cm². Moreover, depth profile analyses of DPPC-sucrose frozen multilayer structures suggest that biomolecule information can be uncovered after the C₆₀⁺ sputter removal of a 20 nm overlayer with no appreciable loss of underlying molecular signal. The experimental results support the potential for three-dimensional molecular mapping of biological materials using cluster SIMS.     

Processing,Structure, Properties,and Applications of PZT Thin Films

There has been a resurgence of complex oxides of late owing to their ferroelectric and ferromagnetic properties. Although these properties had been recognized decades ago, the renewed interest stems from modern deposition techniques that can produce high quality materials and attractive proposed device concepts. In addition to their use on their own, the interest is building on the use of these materials in a stack also. Ferroelectrics are dielectric materials that have spontaneous polarization in certain temperature range and show nonlinear polarization–electric field dependence called a hysteresis loop. The outstanding properties of the ferroelectrics are due to non-centro-symmetric crystal structure resulting from slight distortion of the cubic perovskite structure. The ferroelectric materials are ferroelastic also in that a change in shape results in a change in the electric polarization (thus electric field) developed in the crystal and vice versa. Therefore they can be used to transform acoustic waves to electrical signal in sonar detectors and convert electric field into motion in actuators and mechanical scanners requiring fine control. In a broader sense the ferroelectric materials can be used for pyroelectric and piezoelectric sensors, voltage tunable capacitors, infrared detectors, surface acoustic wave (SAW) devices, microactuators, and nonvolatile random-access memories (NVRAMs), including the potential production of one transistor memory cells, and applications requiring nonlinear optic components. Another set of potential applications seeks to exploit the ferroelastic properties in stacked templates where they are juxtaposed to ferromagnetic materials. Doing so would allow the control of magnetic properties with electric field, which is novel. Such templates taking advantage two or more properties acquired a new name and now goes by multiferroics. After a brief historical development, this article discusses technological issues such as growth and processing, electrical and optical properties, piezo, pyro, and ferroelectric properties, degradation, measurements methods, and application of mainly lead-zirconate-titanate (PZT = PbZr_1?xTi_xO₃). The focus on PZT stems from its large electromechanical constant, large saturation polarization and large dielectric constant.     

TiO2/CdSe多层膜结构的制备及光电化学性能研究

采用电化学方法在导电的ITO/TiO₂ 薄膜上沉积了棕红色CdSe薄膜, 并制得TiO₂/CdSe多层膜体系,研究了多层膜的微结构和光电化学性能. 实验表明, CdSe薄膜沿着(111)方向择优生长, 多层膜结构的厚度和紫外-可见光吸收强度随着沉积层数的增加而增加. 通过测定多层膜电极的光电化学性能表明, 二层膜体系的开路电压和短路电流密度最大,光电化学性能最好.     

Electric and ferroelectric properties of PZT/BLT multilayer films prepared by photochemical metal-organic deposition

The electric and ferroelectric properties of lead zirconate titanate (PZT) and lanthanum-substituted bismuth titanate (BLT) multilayer films prepared using photosensitive precursors were characterized. The electric and ferroelectric properties were investigated by studying the effect of the stacking order of four ferroelectric layers of PZT or BLT in 4-PZT, PZT/2-BLT/PZT, BLT/2-PZT/BLT, and 4-BLT multilayer films. The remnant polarization values of the 4-BLT and BLT/2-PZT/BLT multilayer films were 12 and 17 μC/cm², respectively. Improved ferroelectric properties of the PZT/BLT multilayer films were obtained by using a PZT intermediate layer. The films which contained a BLT layer on the Pt substrate had improved leakage currents of approximately two orders of magnitude and enhanced fatigue resistances compared to the films with a PZT layer on the Pt substrate. These improvements are due to the reduced number of defects and space charges near the Pt electrodes. The PZT/BLT multilayer films prepared by photochemical metal-organic deposition (PMOD) possessed enhanced electric and ferroelectric properties, and allow direct patterning to fabricate micro-patterned systems without dry etching.     

Ground state and properties of ferroelectric superlattices based on crystals of the perovskite family

The crystal structure of the ground state of ten free-standing ferroelectric superlattices based on crystals with the perovskite structure (BaTiO₃/SrTiO₃, PbTiO₃/SrTiO₃, PbTiO₃/PbZrO₃, SrZrO₃/SrTiO₃, PbZrO₃/BaZrO₃, BaTiO₃/BaZrO₃, PbTiO₃/BaTiO₃, BaTiO₃/CaTiO₃, KNbO₃/KTaO₃, and KNbO₃/NaNbO₃) was calculated from first principles within the density functional theory taking into account criteria for stability of the structures with respect to acoustic and optical distortions. It was shown that the ground state in all the considered superlattices corresponds to the ferroelectric phase. It was found that the polarization vector has a tendency toward a tilt to the plane of the superlattice layers, which makes it possible to decrease the electrostatic and elastic energy in the superlattices consisting of materials with different ferroelectric properties. The importance of the inclusion of structural distortions due to unstable phonons at the Brillouin zone boundary, which, in a number of cases, lead to significant changes in ferroelectric and dielectric properties of the superlattices, was demonstrated.     

Coupling of ferroelectric and antiferromagnetic order parameters in hexagonal RMnO3

Second-harmonic generation (SHG) is used as a probe for the coexisting ferroelectric and antiferromagnetic orders in hexagonal RMnO₃. SH contributions coupling to the electric and/or magnetic order parameters are identified on the basis of their spectral dependence and the symmetries of the corresponding order parameters. The SH signals from the ferroelectric and antiferromagnetic orders were employed to image the electric and magnetic domain structures separately. The transformation properties of electric and magnetic domains are discussed with respect to the transformation properties of the corresponding order parameters. An investigation of the mutual coupling between the coexisting electric and magnetic orders reveals apparently independent domain structures, which contradicts the symmetry and transformation properties of electric-dipole-induced SHG in this ferroelectromagnetic group of compounds. Apart from higher-order multipole contributions to SHG, interface contributions from clamped electric and magnetic domains can solve the contradiction. Received: 16 October 2001 / Published online: 24 April 2002