The use of diode array detectors in conjunction with continuous wave gas lasers for anti-Stokes Raman spectroscopy

The Raman spectrum of any molecule consists of two mirror-image signals, th e Stokes and anti-Stokes Raman spectra. In most cases, unless highly specific sampling conditions are used, the anti-Stokes signal is much weaker than that of the Stokes. The recent application of intensified diode array detectors to Raman spectroscopy has produced a marked increase in the sensitivity of the technique which makes a study of the anti-Stokes spectrum potentially more rewarding than it has been to date. The present study has shown that, although of limited use for general purposes, there are some specific instances where the anti-Stokes spectrum can be of considerable practical use. Such applications are to extend the operating range of the Raman spectrometer, to study photodegradable samples and for the analysis of samples which exhibit strong fluorescence.     

The use of 752.5 and 799.3 nm laser excitation in Raman spectroscopy

The two continuous wave lasers normally used for Raman spectroscopy are the argon and krypton ion lasers. These routinely provide step tuning between 459.9 and 676.4 nm. However, it is possible, using suitably coated mirrors, to obtain far red lines from the Kr⁺ laser at 752.5 and 799.3 nm.This additional capability offers advantages for Raman spectroscopy in the areas of fluorescence rejection, sample decomposition and resonance Raman spectroscopy.     

基于可调谐半导体激光器吸收光谱的高灵敏度甲烷浓度遥测技术

讨论了一种新的高灵敏度甲烷遥测方法,利用可调谐激光二极管的调制光谱技术扫描甲烷的吸收峰,通过在测量光路中插入参考气池,增强低浓度情况下的吸收峰辨识能力,以提高甲烷浓度遥测信号的信噪比.此外,可以将激光器的中心波长锁定至气体吸收峰的峰值位置从而使仪器工作于吸收峰锁定模式,进行甲烷浓度的连续监测.实验结果表明,在测量距离分别为10 m和20 m时,周围环境中的甲烷积分浓度探测极限可以分别达到5 ppm·m和16 ppm·m.在吸收峰锁定工作模式下,系统在37 m距离处具有22 ppm·m的检出限,并可以监测甲烷浓度的快速变化.     

An investigation of coupled-cavity diode lasers

In this paper, the rate equations of coupled-cavity diode lasers are studied and their improvements in the case of strong coupling are presented, and therefore, the mechanism of single-mode oscillation of the devices is discussed.     

An investigation of coupled-cavity diode lasers

In this paper, the rate equations of coupled-cavity diode lasers are studied and their improvements in the case of strong coupling are presented, and therefore, the mechanism of single-mode oscillation of the devices is discussed.     

Structure optimisation of short-wavelength ridge-waveguide InGaN/GaN diode lasers

Room-temperature (RT) continuous-wave (CW) operation of the 405-nm ridge-waveguide (RW) InGaN/GaN quantum-well diode lasers equipped with the n-type GaN substrate and two contacts on both sides of the structure has been investigated with the aid of the comprehensive self-consistent simulation model. As expected, the mounting configuration (p-side up or down) has been found to have a crucial impact on the diode laser performance. For the RT CW threshold operation of the otherwise identical diode laser, the p-side up RW laser exhibits as high as nearly 68°C maximal active-region temperature increase whereas an analogous increase for the p-side down laser was equal to only 24°C. Our simulation reveals that the lowest room-temperature lasing threshold may be expected for relatively narrow and deep ridges. For the structure under consideration, the lowest threshold current density of 5.75 kA/cm² has been determined for the 2.2-μm ridge width and the 400-nm etching depth. Then, the active-region temperature increase was as low as only 24 K over RT. For wider 5-μm ridge, this increase is twice higher. An impact of etching depth is more essential for narrower ridges. Quite high values (between 120 and 140 K) of the characteristic parameter T₀ convince very good thermal properties of the above laser.     

非对称波导结构提高980 nm激光二极管电光效率的机理研究

采用高电流注入条件下的载流子扩散方程和复折射率波导模型情况下的亥姆霍兹方程,对980 nm高功率激光二极管外延材料的非对称和对称波导结构的光吸收损耗进行了理论计算。采用低压金属有机化学气相外延技术制备了两种波导结构的外延材料,并制作了激光器件,进行了光电特性测试和对比分析。理论计算和实验结果表明：与对称波导结构相比,非对称波导结构外延材料并未减小光吸收损耗,而是减小了串联电阻,因而降低了器件的焦耳热损耗,从而提高器件的电光效率。     

Trace-gas analysis using diode lasers in the near-IR and long-path techniques

Room-temperature, near-infrared, semiconductor diode lasers continue to gain importance for gas monitoring applications owing to their compactness, ease of use, reasonable cost and compatibility with telecommunications-grade optical fiber components. They may probe overtone or combination vibrational bands for a large variety of atmospheric relevant molecular species. These spectral bands exhibit line strengths orders of magnitude lower than those of fundamental vibrations, occurring in the mid-infrared. As a consequence, they are often used in conjunction with long-path techniques, enabling one to perform high sensitivity local measurements through long absorption path-lengths. At this purpose, resonant optical cavities can be fruitfully employed. This paper is devoted to a discussion of the main features of cavity-enhanced absorption spectrometers, operating with near-infrared diode lasers. We report on the operating principle as well as the achievable performance of these devices, also compared to more traditional apparatus, based on the multiple reflection cells. Experimental results on water vapour and oxygen detection are reported.     

改善高功率激光二极管阵列光束质量的一种新方法

根据波导模理论，推导了高功率激光二极管阵列的远场分布，根据其分布特点，设计了一种离轴外腔.运用这种外腔，在工作电流为17A时，光束的束宽积从自由运转时的1100mm·mrad减小到128mm·mrad，二极管阵列的光束质量提高了8.5倍左右，输出功率约为自由运转时的75%.     

高功率激光二极管阵列端面抽运放大器新型耦合方式研究

就高功率激光二极管阵列端面抽运大口径放大器提出一种新的耦合方式：激光二极管阵列拟球面排布,其后紧接一个导管进行耦合传输. 用三维光线追迹法对这种耦合方式的特性进行模拟分析. 结果表明,该耦合方式能实现高的抽运耦合效率和高的能量沉积效率,在面积缩束比为30的条件下,该耦合方式的耦合效率和能量沉积效率最高可分别达96.7%,93.7%;当激光二极管面阵单元发光区域不小于导管输出端口径时,该耦合方式能实现抽运场均匀平顶分布;另外,采用该耦合方式,激光二极管阵列排列方式灵活,非对称排布时也可实现两维对称性好、均匀平顶分布的抽运耦合场输出. 建立了激光二极管阵列端面耦合实验系统,实现了85.4%的耦合效率和均匀的抽运耦合场输出. 关键词： 激光二极管阵列抽运固体激光器 端面抽运 均匀抽运     

Efficient Raman frequency conversion of high‐power fiber lasers in diamond

We report high‐power frequency conversion of a Yb‐doped fiber laser using a double‐pass pumped external‐cavity diamond Raman oscillator. Pumping with circular polarization is shown to be efficient while facilitating high‐power optical isolation between the pump and Raman laser. We achieved continuous‐wave average power of 154 W with a conversion efficiency of 50.5% limited by backward‐amplified light in the fiber laser. In order to prove further scalability, we achieved a maximum steady‐state Raman‐shifted output of 381 W with 61% conversion efficiency and excellent beam quality using 10 ms pump pulses, approximately a thousand times longer than the transient thermal time‐constant. No power saturation or degradation in beam quality is observed. The results challenge the present understanding of heat deposition in Raman crystals and foreshadow prospects for reduced thermal effects in diamond than originally anticipated. We also report the first experimental evidence for stimulated Brillouin scattering in diamond.

     

碱蒸气激光半导体泵浦源谱宽压窄

笑脸效应严重制约大功率半导体激光器输出谱宽压窄。为避免笑脸效应,以中心波长780 nm单宽面源大功率半导体激光器为研究对象,利用利特曼外腔结构,优化外腔参数,在激光器自由运转19 W时,获得11.5 W、外腔效率达61%的窄线宽输出。将窄线宽输出激光通过长25 cm, 80 kPa乙烷、110 ℃的铷池,96.7%的泵浦光被吸收,通过与理论模型对比,推断半导体激光器的输出谱宽为15 GHz(0.03 nm)。     

The use of a diode laser in an ESPI system

The use of a diode laser in an ESPI system is reported. These lasers have considerable potential advantages over gas lasers in terms of convenience, cost and lifetimes, and may eventually replace the latter in this type of instrument.     

碱蒸气激光半导体泵浦源谱宽压窄

 笑脸效应严重制约大功率半导体激光器输出谱宽压窄。为避免笑脸效应,以中心波长780 nm单宽面源大功率半导体激光器为研究对象,利用利特曼外腔结构,优化外腔参数,在激光器自由运转19 W时,获得11.5 W、外腔效率达61%的窄线宽输出。将窄线宽输出激光通过长25 cm, 80 kPa乙烷、110 ℃的铷池,96.7%的泵浦光被吸收,通过与理论模型对比,推断半导体激光器的输出谱宽为15 GHz(0.03 nm)。     

双光栅实现半导体激光阵列波长组束

在波长光束组合基础上,用一个光栅和一个准直透镜代替传输透镜,可以有效地减小单个发光单元光束质量的退化,明显地克服相邻发光单元的反馈串扰,实现了较窄线宽的光谱组束输出。采用标准的半导体激光阵列,连续输出激光功率44.8 W,电光转换效率最高38.9%,光谱线宽为4.1 nm。光束慢轴方向光束质量因子为11.7,快轴方向光束质量因子为1.37,快慢轴两个方向都接近单个发光单元光束质量。     

高功率二极管激光阵列输出光谱特性的改善

采用体布拉格光栅（VBG）外腔来压窄并稳定二极管激光阵列（DLA）输出光束的频谱。实验结果表明：在VBG波长锁定前后,DLA输出光束的光谱宽度由1.7 nm减小到0.4 nm,压窄的光谱不随注入电流的增大发生明显变化,不随热沉的温度升高而明显漂移。VBG波长锁定后在注入电流为35 A时,输出功率为15.12 W,功率损耗约2%。     

体布拉格光栅外腔实现激光二极管阵列同相模输出

采用体布拉格光栅作为商用二极管激光阵列外腔,通过将每个单元发出的光反馈回相邻单元实现了外腔锁相。采用这种方法对发光单元宽度为100 μm、周期为200 μm,由49个单元构成的二极管阵列进行了外腔锁相实验,在远场获得了高光束质量、窄带宽的稳定输出。二极管激光阵列自由运转下功率为15 W,经外腔锁相后输出功率为3.67 W,对应光束远场发散角1.47 mrad, 光谱的峰值半宽由1.7 nm压窄到0.17 nm。     

940nm波长高功率线阵二极管激光器封装研究

对940nm波长高功率线阵二极管激光器的封装结构进行了重新设计,并在此基础上开展了芯片的封装实验。封装出的线阵二极管激光器,在连续工作时输出激光功率达40W,在准连续工作时（占空比0.5%）,输出峰值功率可达100W。     

940nm波长高功率线阵二极管激光器封装研究

 对940nm波长高功率线阵二极管激光器的封装结构进行了重新设计，并在此基础上开展了芯片的封装实验。封装出的线阵二极管激光器，在连续工作时输出激光功率达40W，在准连续工作时（占空比0.5%），输出峰值功率可达100W。     

Gold nanoparticle-coated silicon cone array for surface-enhanced Raman spectroscopy

ABSTRACT

We demonstrate a silicon cone array substrate coated with gold nanoparticles and which was highly sensitive, homogeneous, and provided a large area for surface-enhanced Raman spectroscopy (SERS). A deep reactive ion-etching process was used to fabricate the high-density silicon cone array, and gold nanoparticles were formed on the silicon cone surface by magnetron sputtering. The substrate was tested with 10^?6 M rhodamine 6 G solution. Enhancement of the substrate was about 60-fold greater than that of flat substrate. Moreover, SERS signals obtained from 24 random areas on the substrate showed good homogeneity with an average standard deviation of 3.9%.