Study of terahertz radiation generated by optical rectification on thin gold films

Emission of terahertz (THz) radiation as a result of optical rectification of intense femtosecond laser pulses on thin gold films has been studied by time-domain THz spectroscopy. The THz amplitude was measured as a function of film thickness and incidence angle. The experiments reveal that the emitted THz field is suppressed for a thickness below 100 nm, which gives evidence of the nonlocal character of the response. The variation of incidence angle allows us to estimate the components of susceptibility tensor chi2ijk. For thicker films and near grazing incidence, the emitted THz field attains a peak value of 4 kV/cm.     

Generation of sub-mJ terahertz pulses by optical rectification

Recent theoretical calculations predicted an order-of-magnitude increase in the efficiency of terahertz pulse generation by optical rectification in lithium niobate when 500 fs long pump pulses are used, rather than the commonly used ~100 fs pulses. Even by using longer than optimal pump pulses of 1.3 ps duration, 2.5× higher THz pulse energy (125 μJ) was measured with 2.5× higher pump-to-THz energy conversion efficiency (0.25%) than reported previously with shorter pulses. These results verify the advantage of longer pump pulses and support the expectation that mJ-level THz pulses will be available by cooling the crystal and using large pumped area.     

Efficient generation of terahertz radiation by the method of optical rectification of terawatt laser pulses

Factors that lead to a decrease in the width and the mean frequency of the spectrum of terahertz (THz) radiation that were observed in recent experiments on optical rectification of powerful (∼0.5 TW) femtosecond laser pulses with a tilted amplitude front in a lithium niobate crystal are considered. A simple method is proposed that allows one to avoid the above transformation of the spectrum and to ensure a high efficiency of generation of THz radiation when laser pulses with a power of several TW are used.     

Generation of nanosecond terahertz pulses by the optical rectification method

The possibility of the generation of quasi-cw terahertz radiation by the optical rectification method for broad-band Fourier unlimited nanosecond laser pulses has been experimentally demonstrated. The broadband radiation of a LiF dye-center laser is used as a pump source of a nonlinear optical oscillator. The energy efficiency of terahertz optical frequency conversion in a periodically polarized lithium niobate crystal is 4 × 10⁻⁹ at a pump power density of 7 MW/cm².     

Generation of radially polarized terahertz pulses via velocity-mismatched optical rectification

We demonstrate the generation of radially polarized terahertz pulses via optical rectification in a Cherenkov geometry exploiting velocity mismatch, contrary to the traditional approach for generating linearly polarized terahertz beams. A compact system is implemented using 001-cut ZnTe pumped by an ultrafast Yb-doped fiber amplifier.     

Intense terahertz pulses by four-wave rectification in air

We describe a new four-wave rectification method for the generation of intense, ultrafast terahertz (THz) pulses from gases. The fundamental and second-harmonic output of an amplified Ti:sapphire laser is focused to a peak intensity of ~5x10(14)W/cm (2) . Under these conditions, peak THz fields estimated at 2 kV/cm have been observed; the measured power spectrum peaks near 2 THz. Phase-dependent measurements show that this is a coherent process and is sensitive to the relative phases of the fundamental and second-harmonic pulses. Comparable THz signals have been observed from nitrogen and argon as well as from air.     

Toward generation of μJ range sub-ps THz pulses by optical rectification

Recently the possibility of scaling up the energy of sub-ps THz pulses generated in lithium-niobate by tilted pulse front excitation was demonstrated. Using 500 μJ energy pump pulses at 780 nm center wavelength, we achieved THz pulses with energy up to 240 nJ. In this article, results of calculations using a simple model predict the possibility of increasing the THz pulse energy above 1 μJ and the quantum efficiency up to 50% by decreasing the temperature. The dependence of the THz pulse energy and the maximum achievable electric field on the crystal length and the pump pulse duration is also presented. According to the calculations, generation of the maximum THz energy needs a specific pump pulse duration, because of increasing dispersion and absorption with increasing frequency. Not only longer, but also shorter pulses lead to a degradation of the THz energy. Results of calculations for GaSe, GaP and ZnTe are also presented. PACS 07.57.Hm; 42.65.Ky; 42.79.Nv     

Generation of 30 microJ single-cycle terahertz pulses at 100 Hz repetition rate by optical rectification

We report the generation of 30 microJ single-cycle terahertz pulses at 100 Hz repetition rate by phase-matched optical rectification in lithium niobate using 28 mJ femtosecond laser pulses. The phase-matching condition is achieved by tilting the laser pulse intensity front. Temporal, spectral, and propagation properties of the generated terahertz pulses are presented. In addition, we discuss possibilities for further increasing the energy of single-cycle terahertz pulses obtained by optical rectification.     

THz-wave generation by optical rectification of ultrashort laser pulses with tilted amplitude front

The optical rectification of ultrashort laser pulses with a titled amplitude front in LiNbO₃ crystal is studied theoretically. It is shown that the results of calculation are in reasonable agreement with experimental data.     

Generating terahertz radiation by means of optical rectification

Various means of raising the efficiency of generating wideband terahertz radiation on the basis of optical rectification are analyzed.     

Preparation of ultrathin gold films by oxygen-ion sputtering and their optical properties

The optical and electrical properties of gold films of thickness varying from less than 1 to 8 nm are studied. The films are obtained by sputtering with argon ion and oxygen ion beams. It is shown that the properties of the films are independent of the type of ions used for sputtering. The 1-to 5-nm-thick films are continuous and offer a high transparency. Sputtering by oxygen ion beams is used to produce NiO_x/Au ohmic contacts to p-GaN.     

Generation of subpicosecond electrical pulses by optical rectification

We describe the generation of subpicosecond electrical pulses by optical rectification of ultrashort optical pulses. The electrical pulses are generated by the second-order nonlinear response of a LiTaO(3) crystal bonded to a coplanar transmission line. A bipolar temporal waveform with a width of 875 fs was measured after a propagation distance of 175mum . This pulse width was limited by the response time of the photoconductive sampler. We observed both broadening and amplitude reduction in the temporal waveform owing to propagation.     

The generation of terahertz radiation via optical rectification in the self-induced transparency regime

The possibility of efficient terahertz generation via optical rectification in electro-optic crystal doped with the two-level resonant impurities is demonstrated. Under conditions of the self-induced transparency regime the laser pulses slows down to achieve the phase matching condition. The terahertz generation is accompanied by periodic modulation and spectral deformation of the laser pulse. The most efficient generation occurs under condition of small negative detuning from the resonant frequency of the two-level system.     

Tunable THz pulse generation by optical rectification of ultrashort laser pulses with tilted pulse fronts

Optical rectification of ultrashort near-IR laser pulses with tilted pulse fronts and pulse energies of a few J in Mg-doped stoichiometric LiNbO₃ cooled to low temperature is a powerful technique for efficient generation of THz pulses. The pulse energy critically depends on the Mg doping (necessary for preventing photorefractive damage) and can be easily increased by a factor of three if the MgO content is reduced. Pulse energies up to 400 pJ at repetition rates of 200 kHz and 3.4% quantum conversion efficiency are achieved at 77 K. At 10 K, changing the tilt angle of the pump pulse front results in continuous tuning of the frequency across the 1.0–4.4 THz range. The temporal pulse shapes measured by electro-optic sampling are in good agreement with the signal calculated by a simple theory. This model predicts tunability on a considerably broader range and narrower spectra even at room temperature if GaSe is used instead of LiNbO₃. The advantages of the velocity matching technique utilizing tilted pulse fronts are analyzed in comparison with quasi-phase-matching in periodically poled LiNbO₃ crystals. The first method provides a ten times higher pulse energy conversion efficiency. PACS 42.65.Ky; 42.70.Mp; 42.72.Ai     

Transition from photocurrent surge to resonant optical rectification for terahertz generation in p-InAs

It has been demonstrated that the key to complete understanding of the mechanisms for terahertz (THz) generation from a p-type InAs wafer pumped by a subpicosecond Ti:sapphire amplifier lies in the dependences of the THz polarization on the azimuthal angle and polarization of the pump beam. At low enough pump intensities, photocurrent surge is the dominant mechanism for THz generation. However, the THz radiation originating from photocurrent surge is greatly reduced with increased pump intensity. Therefore, at sufficiently high pump intensities resonant optical rectification becomes the dominating mechanism for THz generation. The highest output power is measured to be 57 microW.     

Generation of terahertz radiation by optical rectification in presence of resonance impurities

We demonstrate the possibility of an efficient generation of terahertz radiation under optical rectification in a uniaxial crystal containing impurities with resonance two-level quantum transitions. The group velocity of an optical pulse entering the regime of self-induced transparency decreases to the value of phase velocity of the terahertz radiation, which results in phase matching of long- and short-wavelength waves. The terahertz generation is accompanied by strong self-modulation of the optical pulse. Two-component soliton-like structures can be formed at long distances accompanied by spectral red shift of the optical component.     

Generation of terahertz radiation in the regime of resonant-nonresonant optical rectification

The generation of broadband terahertz radiation in quadratically nonlinear crystals containing additional resonant impurities having a permanent dipole moment has been theoretically analyzed. It has been shown that the contributions to the intensity of the generated radiation from resonance and nonresonance mechanisms of optical rectification are nonadditive. In semiconductor nanostructures and systems of organic molecules, the energy efficiency of generation due to the resonance mechanism can reach about 0.001, which is much higher than the corresponding efficiencies of the currently widespread tilted front technique. The spectra of the input optical pulses exhibit a noticeable red shift due to the resonance-nonresonance rectification.     

Some optical specificity of ultrathin crystalline films

The changes of optical properties under boundary presence in molecular crystal nanofilm were theoretically investigated in this work. The dispersion law and states of excitons as well as their space distribution along boundary direction have been determined using adjusted Green's function method and also by combined analytical and numerical calculations. On the basis of real and imaginary part of relative permittivity, both absorption and refraction indices were determined, and the influences of boundary parameters on occurrence of a very selective and strictly discrete absorption were analyzed.     

Resonant terahertz generation from InN thin films

Highly efficient conversion from ultrafast optical pulses to their terahertz (THz) counterparts has been achieved with InN thin films. An average THz output power as high as 0.931 microW has been obtained for an average pump power of 1 W, corresponding to a normalized conversion efficiency of 190% mm(-2). Based on our measured dependences of the THz output power on pump polarization, incident angle, pump power, and InN film thickness, resonance-enhanced optical rectification is one of the most plausible mechanisms for the THz generation in the InN films.