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外延法生长金刚石薄膜场发射特性研究 总被引:4,自引:3,他引:1
研究了外延法生长金刚石薄膜的场发射特性.金刚石薄膜用热丝CVD法生长,甲烷与氢气比例为2.5%,生长于事先电泳沉积在硅衬底的金刚石微晶上.实验数据的计算结果表明:金刚石薄膜的阈值电压为1.8 V/μm,有效功函数降低为纯金刚石颗粒的0.11倍.通过SEM、XRD和Raman等手段表征了金刚石薄膜的结构,并对其场发射机制作出理论分析. 相似文献
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利用电化学方法在室温下成功地沉积了类金刚石(DLC)薄膜和非晶CNx薄膜,并 对制备条件进行了讨论.通过扫描电子显微镜、傅里叶变换红外光谱技术,分析了薄膜的表面形貌和化学结合状态.场发射测量结果表明:DLC膜和非晶CNx的开启场分别为88和 10V/μm;并且在23V/μm的电场下,DLC膜和非晶CNx膜的发射电流密度分别达到10 和037mA/cm2.
关键词:
电化学沉积
类金刚石薄膜
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场致电子发射 相似文献
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利用改造的扫描电子显微镜(SEM)设备,在SEM腔体中利用钨(W)探针测试了单颗粒金刚石的I-V与场发射特性,结果表明结晶良好的金刚石的I-V特性服从欧姆定律,而孤立的菜花状金刚石颗粒(cauliflower-like diamond)的I-V特性基本符合Pool-Frenkel输运特性.场发射特性表明,结晶良好的金刚石薄膜基本没有场发射,而孤立的菜花状的金刚石颗粒具有一定的场发射.CVD金刚石的场发射过程中,缺陷对电子的输运起主导作用. 相似文献
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Derivation of the elementary Fowler-Nordheim equation is based on several strong physical assumptions (e.g. smooth flat surface and uniform work function across emitting surface, constant emission area and a uniform distribution of the applied field over it). A real emitter, however, definitely does not fulfill these assumptions. In spite of it the total emission current follows the FN equation and is frequently used for an estimation of the "average" work-function. The physical basis of this procedure and of the terms "average" work function and "emission area" are analyzed from the experimentalist's point of view. Thus some of the older - more or less intuitive - conclusions are substantiated. 相似文献
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Ahmed A. Al-Tabbakh 《哲学杂志》2015,95(26):2839-2850
Linear and nonlinear Fowler–Nordheim (FN) plots from semiconductors emitters arrays were equally reported by researchers with occasionally inexplicit justification of either behaviour. Interpretation of experimental field emission data depends on explaining the FN plot behaviour from these arrays. The FN plot behaviour was investigated for virtual arrays of ZnO emitters with defined geometries based on fundamental electron tunnelling from semiconductors. The effects of emitters’ size distribution, saturation of conduction band (CB) current and contribution of valence band (VB) current on FN plot behaviour were investigated and discussed in detail. Comparison with some experimental results was introduced in support of the discussion. Results showed that saturation of CB current and contribution of VB electrons may not always be manifested as a well-observed deviation from linear characteristic of the FN plot. In addition, the dependence of the CB current on the emitters’ geometries was found to affect the FN plot behaviour. The present investigation is thought to be of great importance to field emission community and help for better interpretation of experimental field emission data. 相似文献
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将单根多壁碳纳米管(multi-walled carbon nanotube,MWCNT)组装在W针尖上并送入超高真空场发射/场离子显微镜(Ultrahigh Vacuum Field-emission/Field-Ion microscope,UHV-FEM/FIM)进行场蒸发及场发射研究.结果表明,场蒸发可以降低MWCNT的逸出功,从而增强其场发射能力.估算MWCNT的蒸发场低于1.3×108V·cm-1,且在此场强下的平均蒸发速率为9.4nm·min-1.定性讨论了MWCNT的蒸发场大大低于C的理论值的原因.首先,通过场解吸获得的清洁端口上有较多悬挂键,平均每个C原子的配位数较小,所以升华热较低.其次,可能存在于MWCNT中的H原子会在强场下碰撞端口的C原子,使其更易蒸发.以上结果显示了利用场蒸发剪短碳纳米管从而改善其场发射特性的可行性.
关键词:
碳纳米管
场蒸发
场发射 相似文献
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利用场发射显微镜和四极质谱计研究了充入高纯O2的四极质谱和O2对单壁碳纳米管场发射的影响.单壁碳纳米管经过约1000℃的热处理得到清洁态场发射像后,充入O2,分别测量了O2吸附和脱附后场发射的I V特性.实验观测到在单壁碳纳米管上O2的吸附使场发射电流减小,说明逸出功增加.在10-4Pa的O2压强下对单壁碳纳米管进行约1000℃的热处理,可以产生氧化刻蚀作用,观测到场发射像的变化,并测量了氧化刻蚀产生的I V特性变化.
关键词:
单壁碳纳米管
场发射显微镜
场发射
四极质谱 相似文献
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研究发现,在超强激光作用下电子运动的相对论效应可导致高次谐波辐射,采用单电子模型计算分析了不同偏振微光作用下的高次谐波发射,表明圆偏振激光较线偏振激光更有利于高次谐波产生。 相似文献