Spin-dependent electron tunneling in superconducting vanadium and vanadium-titanium thin films

The tunneling conductance dI/dV of junctions between A1 films and thin superconducting films of V or VTi alloys has been measured in magnetic fields up to 6 T applied parallel to the films. The films have small spin-orbit scattering and show Zeeman splitting of the quasi-particle density of states.     

Study of Co thin films deposited on low-index Cu surfaces by photoemission electron microscopy

The domain structures of Co ultrathin film prepared with μm- and mm-dimension laterally were acquired and compared using X-ray Photoemission Electron Microscope (PEEM). Through depositing the Co film with different thickness on two copper single-crystal surfaces; Cu(1 0 0) and Cu(1 1 0), we report the impacts of thin film lateral dimensions, crystal orientations, and film thickness to the domain structures of Co layer.     

Spin-dependent electron transport in manganite bicrystal junctions

Magnetic bicrystal films and junctions of magnetic La_0.67Sr_0.33MnO₃ (LSMO) and La_0.67Ca_0.33MnO₃ (LCMO) films epitaxially grown on NdGaO₃ substrates with the (110) planes of their two parts misoriented (tilted) at angles of 12°, 22°, 28°, and 38° are investigated. For comparison, bicrystal boundaries with a 90° misorientation of the axes of the NdGaO₃ (110) planes were fabricated. The directions of the axes and the magnetic anisotropy constants of the films on both sides of the boundary are determined by two independent techniques of magnetic resonance spectroscopy. The magnetic misorientation of the axes in the substrate plane has been found to be much smaller than the crystallographic misorientation for tilted bicrystal boundaries, while the crystallographic and magnetic misorientation angles coincide for boundaries with rotation of the axes. An increase in the magnetoresistance and characteristic resistance of bicrystal junctions with increasing misorientation angle was observed experimentally. The magnetoresistance of bicrystal junctions has been calculated by taking into account the uniaxial anisotropy, which has allowed the contributions from the tunneling and anisotropic magnetoresistances to be separated. The largest tunneling magnetoresistance was observed on LCMO bicrystal junctions, in which the characteristic resistance of the boundary is higher than that in LSMO boundaries.     

Spin-dependent transport in a magnetic two-dimensional electron gas

Magneto-transport and magneto-optical probes are used to interrogate spin-dependent transport in magnetic heterostructures wherein a two dimensional electron gas (2DEG) is exchange-coupled to local moments. At low temperatures, the significant s–d exchange-enhanced spin splitting in these “magnetic” 2DEGs is responsible for the observation of unusual transport properties such as a complete spin polarization of the gas at large Landau level filling factors and a pronounced, non-monotonic background magneto-resistance. Magneto-transport measurements of gated samples performed in a parallel field geometry are used to systematically study the variation of the magneto-resistance with sheet concentration, yielding new insights into the dependence of spin transport on the Fermi energy of the majority spin carriers.     

Structure and magnetic anisotropy of Co/Cu/Co films

The energy of the magnetic anisotropy of Co/Cu/Co polycrystalline ultradisperse films is investigated as a function of the thickness of copper and cobalt layers. The influence of the structure parameters (the size and distribution of defects, the period and amplitude of roughnesses) on the surface and volume components of the magnetic anisotropy is analyzed. The parameters of the structure inhomogeneities and their distribution over the film surface are determined from two-dimensional Fourier spectra and electron microscope images of the films.     

Surface morphology and electron transport correlation in thin iron films

In this work we studied the magnetic, resistive and magnetoresistive properties of thin iron films deposited on vicinal silicon substrates. The film surfaces were characterized by atomic force microscopy which revealed formation of elongated stripes. We show that the morphological anisotropic structure of the films influences significantly both their magnetic and electronic transport.     

Spin-dependent transport in films composed of Co clusters and C $_{\mathsf{60}}$ fullerenes

Granular films of Co-cluster/C₆₀ mixtures have been prepared by the co-deposition of well defined Co clusters (mean diameter 4.5 nm) and C₆₀ fullerenes onto a cold ( 35 K) substrate. Films having a Co cluster volume fraction show a resistivity , typical for tunneling with a Coulomb barrier. The tunneling magnetoresistance (TMR) has a value of TMR ( % for and is decreasing by almost one order of magnitude going to . We explain this unusual decrease of the TMR with increasing as caused by electron-doping of the C₆₀ fullerenes due to the known charge transfer process occurring between transition metal surface and C₆₀. Increasing electron doping may lead to an increasing probability for spin-flip processes within the tunneling barrier, resulting in a decrease of the TMR.Received: 17 March 2004, Published online: 3 August 2004PACS: 75.47.-m Magnetotransport phenomena; materials for magnetotransport - 73.40.Gk Tunneling - 73.40.Rw Metal-insulator-metal structures     

Spin-dependent resonant tunneling through quantum-well states in magnetic metallic thin films

Quantum-well (QW) states in nonmagnetic metal films between magnetic layers are known to be important in spin-dependent transport, but QW states in magnetic films remains elusive. Here we identify the conditions for resonant tunneling through QW states in magnetic films and report first principles calculations of Fe/MgO/FeO/Fe/Cr and Co/MgO/Fe/Cr. We show that, at resonance, the current increases by 1 to 2 orders of magnitude. The tunneling magnetoresistance ratio is much larger than in simple spin tunnel junctions and is positive (negative) for majority- (minority-) spin resonances, with a large asymmetry between positive and negative biases. The results can serve as a basis for novel spintronic devices.     

Magnetic anisotropy of Co/Cu/Co films with indirect exchange coupling

The effect of isothermal annealing on the magnetic anisotropy, bilinear and biquadratic exchange coupling energies, and domain structure of Co/Cu/Co trilayer fiilms with d_Co=6 nm and d_Cu=1.0 and 2.1 nm prepared by magnetron sputtering has been studied. It is shown that, under isothermal annealing, the biquadratic coupling energy decreases by more than an order of magnitude in films with d_Cu=1.0 nm and increases in films with d_Cu=2.1 nm. The fourth-order magnetic anisotropy is shown to be related to the existence of biquadratic exchange energy.     

Spin-dependent transport in organic-ferromagnets

Based on the modified Su-Schrieffer-Heeger model and the non-equilibrium Green's function current formula, the spin polarization of the ferromagnet-electrode connected organic ferromagnet is theoretically studied. The spin polarization can be suppressed by atomic dimerization and be driven by an applied electric field. We investigate the spin polarization from the viewpoint of energy competitions in different interactions under the electric field. In addition, the ferromagnetic electrodes significantly enhance the spin polarization.     

拓扑绝缘体薄膜生长与栅电压调控输运特性研究

文章讨论了三维拓扑绝缘体制备和输运性质研究方面的进展情况.首先介绍了拓扑绝缘体体材料和薄膜的制备,并介绍了文章作者利用分子束外延方法,在硅表面以及高介电常数材料钛酸锶表面生长高质量拓扑绝缘体Bi2Se3薄膜的工作.然后介绍了拓扑绝缘体输运研究的现状,以及文章作者在栅电压调控拓扑绝缘体外延薄膜的化学势和输运性质方面的研究成果.     

Ultrafast electron and magnetization dynamics of thin Ni and Co films on Cu(001) observed by time-resolved SHG

Received: 21 December 1998     

Molecular dynamics simulation of Co thin films growth on Cu(001)

Results of MD simulations of the structure of ultrathin films of Co on Cu(001) are presented. Growth conditions corresponding to vacuum evaporation as well as laser ablation are considered. The dynamics of the growth process and the structure of the as-deposited films are investigated as a function of the kinetic energy of adatoms. The effect of fast interdiffusion due to a high impact energy is observed. Tight-binding potentials in the second-moment approximation are used. Co–Cu interaction parameters are determined from ab-initio electronic structure calculations.     

Multi-carrier transport properties in p-type ZnO thin films

By the aid of temperature- and magnetic-field-dependent Hall effect measurements, we have extracted the multi-carrier transport information in N-doped and N–In codoped p- ZnO thin films grown on Si substrates through mobility spectrum analysis. It is found that owing to the compensation between free electrons and holes, the two-dimensional hole gas from ZnO/Si interface layers becomes determinant and results in the high p-type conductivity and high hole mobility in the ZnO samples. Compared with N-doping, the N–In codoping introduces many In donors and increases acceptor incorporation, as well as enhancing the free hole mobility due to the short-range dipole-like scattering.     

Spin-dependent electron localization in crystals

The possibilities of spatially localizing spin-polarized electrons in two-dimensional and three-dimensional systems due to spin-orbit interaction are studied theoretically. Using simple one-dimensional potentials as examples, it is demonstrated that electrons with a definite helicity can be localized so that carrier separation by spin is accomplished. The magnetic field effect is studied, and it is shown that the position of bound levels depends substantially on this effect.     

Exchange bias and negative magnetoresistance in [Co/Bi/Co]/IrMn thin films]

The artificial control of grain-boundary resistance and its contribution to magnetic and magneto-transport properties in [Co(3 nm)/Bi(2.5 nm)/Co(3 nm)]Ir₂₀Mn₈₀(12 nm) thin films that exhibit exchange bias is studied. Transverse magnetoresistance (MR) loops exhibit a negative MR in thin films grown by magnetron sputtering on Si/SiN_x(100 nm) substrates. This negative MR effect is of the giant-MR (GMR) type, although its magnitude is less than 1%. A considerable exchange bias (EB) effect is observed only at lower temperatures, where both, GMR and isothermal magnetization loops exhibit a shift of −600 Oe at 5 K.     

Curie temperature oscillations and critical phenomena in Co/Cu multilayer films

A study is made of Co/Cu multilayer structures with ultrathin Co layers. Oscillations of the saturation magnetization and Curie temperature as a function of the thickness of the intermediate Cu conducting layer are observed. The behavior of the magnetization near the second-order phase transition is studied, and the critical exponents of the magnetization are determined. Pis’ma Zh. éksp. Teor. Fiz. 64, No. 5, 341–345 (10 September 1996)