Spontaneous strain in high-temperature superconductor La1.85Sr0.15CuO4

The lattice parameters of La_1.85Sr_0.15CuO₄ were measured by an x-ray Rietveld method between 15 K and room temperature. A change in a lattice parameter could be detected at superconducting phase transition. It is pointed out, for the first time, that the change can be attributed to a spontaneous strain in the superconducting phase caused by coupling between a superconducting order parameter and the strain.     

薄膜厚度对La1.85Sr0.15CuO4薄膜结构和超导电性的影响

使用直流同轴磁控溅射法,在SrTiO3(STO)衬底上成功制备出c取向的La1.85Sr0.15CuO4(LSCO)超导薄膜.通过电输运测量系统和X射线衍射仪研究了薄膜厚度对LSCO(x＝0.15)薄膜电学性质和晶体结构的影响.实验证明随着膜厚增加,(006)衍射峰的半高宽(Full Width at Half Maximum,FWHM)逐渐减小,薄膜的取向性增强,与此同时,薄膜的超导转变温度TC逐渐提高.     

柠檬酸盐凝胶法制备La1.85Sr0.15CuO4超导样品工艺研究

采用溶胶凝胶法制备LSCO超导样品.凝胶中不同组元分布均匀,达到分子级的程度,有利于样品成相.通过我们的研究发现,仅在750℃就可以合成具有超导性的LSCO样品;处理过程中通氧,有利于有机物的分解,消除残余碳氮含量.     

Tunneling and point contact investigations of La1.85Sr0.15CuO4

The high-T _c superconductor La_1.85Sr_0.15CuO₄ was investigated by means of point contact and tunneling measurements on small-sized contacts. We find different values for the energy gap at different points of the samples. The ratio 2/k _B T _c ranges from about 3 to 6. For some point contacts we observe a clear signature of a supercurrent. Data for the temperature dependence of the critical current are presented.     

Novel in-gap spin state in Zn-doped La1.85Sr0.15CuO4

Low-energy spin excitations of La(1.85)Sr(0.15)Cu(1-y)Zn(y)O4 were studied by neutron scattering. In y=0.004, the incommensurate magnetic peaks show a well-defined "spin gap" below T(c). The magnetic signals at omega=3 meV decrease below T(c)=27 K for y=0.008, also suggesting the gap opening. At lower temperatures, however, the signal increases again, implying a novel in-gap spin state. In y=0.017, the spin gap vanishes and elastic magnetic peaks appear. These results clarify that doped Zn impurities induce the novel in-gap state, which becomes larger and more static with increasing Zn.     

La1.85Sr0.15CuO4纳米线阵列的微结构与超导电性

采用溶胶-凝胶结合多孔氧化铝硬模板约束的方法,成功制备出直径约30nm的La1.85Sr0.15CuO4纳米线阵列,用XRD与X-ray EDX测定了所制备纳米线的物相与成分;FE-SEM与TEM表征了其形貌特征;由HRTEM与SAED测量分析了其微结构;磁化强度的测量结果表明样品具有Tc= 30 K的超导电性,比块材La1.85Sr0.15CuO4的Tc稍低.分析表明所制备的样品中存在一种a,b轴拉伸,c轴压缩的结构畸变,减弱了铜氧面内Cu3d和O2p轨道的杂化程度,减小了a,b面内的态密度,从而压制了体系的超导电性.     

La1．85Sr0．15CuO4纳米线阵列的微结构与超导电性

采用溶胶凝胶结合多孔氧化铝硬模板约束的方法，成功制备出直径约30nm的La1．85Sr0．15CuO4纳米线阵列，用XRD与X-ray EDX测定了所制备纳米线的物相与成分；FE-SEM与TEM表征了其形貌特征；由HRTEM与SAKD测量分析了其微结构；磁化强度的测量结果表明样品具有L-30K的超导电性，比块材La1．85Sr0．15CuO4的Tc稍低．分析表明所制各的样品中存在一种α，b轴拉伸，c轴压缩的结构畸变，减弱了铜氧面内Cu3d和O2p轨道的杂化程度，减小了α，b面内的态密度，从而压制了体系的超导电性．     

Upper limit on the resistivity of La1.85Sr0.15CuO4

The stability of a shielding current in a hollow cylinder of La_1.85Sr_0.15CuO₄ has been studied with a superconducting quantum interference device (SQUID). From the observed lack of decay of the current an upper limit of 3×10^-17ω cm has been established on the resistivity at 4.2 K.     

Microhardness of the compounds La2CuO4 and La1.85Sr0.15CuO4 at temperatures from 81 to 292 K

The microhardness of La₂CuO₄ and La_1.85Sr_0.15CuO₄ crystals is measured in the temperature range 81–292 K, and the influence of various factors on it is investigated. The thermal activation parameters of the plastic deformation process in the vicinity of the indenter impression are estimated. The change of the phase state of the compound La_1.85Sr_0.15CuO₄ at the temperature T ₀=180 K and the appearance of domain (twin) boundaries formed in the ferroelastic tetraortho transition are not seen in the temperature dependence of the microhardness. The results of the study are compared with previously published results for YBa₂CuO_7−x crystals. Fiz. Tverd. Tela (St. Petersburg) 40, 493–497 (March 1998)     

在SrTiO3、LaAlO3和Y-ZrO2衬底上外延生长La1.85Sr0.15CuO4、La2CuO4和Nd1.85Ce0.15CuO4、Pr2CuO4薄膜

利用脉冲激光法研究了在（１００）ＳｒＴｉＯ３（ＳＴＯ）、（１００）ＬａＡｌＯ３（ＬＡＯ）和（１００）Ｙ－ＺｒＯ２（ＹＳＺ）衬底上外延生长ＬａＣｕＯ４（ＬＣＯ）,Ｌａ１．８５Ｓｒ０．１５ＣｕＯ４（ＬＳＣＯ）,Ｎｄ１．８５Ｃｅ０．１５ＣｕＯ４（ＮＣＣＯ）和Ｐｒ２ＣｕＯ４（ＰＣＯ）薄膜的工艺技术。利用Ｘ光衍射仪检测了不同条件下制备的薄膜样品结构和取向。Ｘ射线衍结果表明,在事适的制膜条件下可以在这三种衬底     

超导氧化物La1.85Sr0.15CuO4/超高分子量聚乙烯复合材料的输运性质

采用热压法获得了具有不同混合比例的超导氧化物La1.85Sr0.15CuO4/超高分子量聚乙烯导电复合材料,并利用x射线衍射、扫描电子显微镜和标准四引线方法对复合材料的结构和低温电输运性质进行测量.实验结果显示,超导氧化物La1.85Sr0.15CuO4颗粒随机分布在聚合物本体中,相互间没有连接构成网络结构.在正常态下,复合材料的电阻-温度变化曲线给出类半导体行为.但对应于超导氧化物La1.85Sr0.15CuO4的超导转变温度Tc处,复合材料的电阻-温度变化曲线出现了极小值.室温下电阻率ρ随外加电场强度E的变化曲线测量结果表明,ρ-E曲线为一线形关系,随着电场强度E增加,电阻率ρ下降.文中对可能存在的导电机制进行分析,结果表明隧道贯穿模型可以很好地解释复合材料的导电机制.另外,外加电场强度E对复合材料的电输运特性有明显的影响.     

Field and temperature dependences of the specific heat of the La1.85Sr0.15CuO4 superconductor

This paper reports on the temperature and field dependences of the specific heat of high-quality La_1.85Sr_0.15CuO₄ single crystals carried out at low temperatures in magnetic fields of up to 8 T for two magnetic field orientations, namely, along the [100] and [110] crystallographic axes. The field dependence of the electronic density of states (DOS) was found to be anisotropic for different magnetic field orientations in the a–b plane, with the electronic density being the lowest along the a axis (for H ∥ [100]) and maximum for the field inclined at 45° to the a axis (for H ∥ [110]). Electronic specific heat in a magnetic field was observed to depend linearly on temperature T and nonlinearly on the magnetic field H: C _DOS=bTH ^1/2. In a zero field, the electronic specific heat grows quadratically with temperature as C _DOS=αT ². Estimation of the maximum superconducting gap width from the experimentally determined values of the α coefficient of T ² and of the electronic DOS in the normal state yields Δ ₀=300 K. The observed features indicate that La_1.85Sr_0.15CuO₄ is a superconductor with d symmetry of the order parameter.